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41. 发明授权

US5164278A Speed enhancers for acid sensitized resists 失效
标题翻译：用于酸敏感电阻的速度增强器
公开(公告)号：US5164278A
公开(公告)日：1992-11-17
申请号：US487348
申请日：1990-03-01
申请人： William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
发明人： William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039 , Y10S430/115 , Y10S430/119
摘要： Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

42. 发明授权

US3961099A Thermally stable positive polycarbonate electron beam resists 失效
标题翻译：热稳定的正聚碳酸酯电子束抗拒
公开(公告)号：US3961099A
公开(公告)日：1976-06-01
申请号：US509593
申请日：1974-09-26
申请人： Edward Gipstein , Wayne M. Moreau , Omar U. Need, III
发明人： Edward Gipstein , Wayne M. Moreau , Omar U. Need, III
IPC分类号： G03F7/20 , G03F7/039 , G03F7/30 , H01L21/027 , B05D3/06
CPC分类号： G03F7/30 , G03F7/039 , Y10S430/143
摘要： Electron beam positive resists which are sensitive to electron beam radiation and simultaneously thermally stable are prepared using polycarbonates.
摘要翻译：使用聚碳酸酯制备对电子束辐射敏感并同时热稳定的电子束正抗蚀剂。

43. 发明授权

US07288155B2 Method for the rapid thermal control of a work piece in liquid or supercritical fluid 失效
标题翻译：液体或超临界流体中工件快速热控制的方法
公开(公告)号：US07288155B2
公开(公告)日：2007-10-30
申请号：US11128022
申请日：2005-05-12
申请人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario Goldfarb
发明人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario Goldfarb
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/02101 , B08B7/0021 , H01L21/67109 , H01L21/67248 , Y10S134/902
摘要： A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chamber, placing the semiconductor structure in the chamber in contact with the thermal transfer surface and thermally cycling the thermal transfer surface.
摘要翻译：一种用于清洁半导体结构的方法，包括提供用于保持半导体结构的腔室和致密相流体，提供具有热转印表面的热转印装置，将热转印装置连接到腔室，将半导体结构放置在腔室中与热转印表面接触并热循环热转印表面。

44. 发明授权

US06997197B2 Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid 失效
标题翻译：液体或致密相流体中工件快速热控制的装置和方法
公开(公告)号：US06997197B2
公开(公告)日：2006-02-14
申请号：US10318632
申请日：2002-12-13
申请人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
发明人： John P. Simons , Kenneth J. McCullough , Wayne M. Moreau , John M. Cotte , Keith R. Pope , Charles J. Taft , Dario L. Goldfarb
IPC分类号： B08B7/00
CPC分类号： H01L21/02101 , B08B7/0021 , H01L21/67109 , H01L21/67248 , Y10S134/902
摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.
摘要翻译：一种表面清洁装置，包括腔室和热转印装置。该室能够在其中保持半导体结构。热传递装置连接到腔室。热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

45. 发明授权

US06875286B2 Solid CO2 cleaning 失效
标题翻译：固体二氧化碳清洗
公开(公告)号：US06875286B2
公开(公告)日：2005-04-05
申请号：US10320836
申请日：2002-12-16
申请人： John M. Cotte , Catherine Ivers , Kenneth J. McCullough , Wayne M. Moreau , Robert J. Purtell , John P. Simons , William A. Syverson , Charles J. Taft
发明人： John M. Cotte , Catherine Ivers , Kenneth J. McCullough , Wayne M. Moreau , Robert J. Purtell , John P. Simons , William A. Syverson , Charles J. Taft
IPC分类号： H01L21/304 , B08B7/00 , C25F1/00 , H01L21/30 , H01L21/302 , H01L21/306
CPC分类号： B08B7/0021 , H01L21/02063 , Y10S134/902
摘要： A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.
摘要翻译：提供了一种方法和装置，用于从诸如半导体晶片的电子部件中除去固体和/或液体残留物，其中所述液体或超临界二氧化碳在晶片的表面上固化，然后蒸发并从系统中除去。在优选的实施方案中，在从容器中除去CO 2之前重复（循环）固化和蒸发步骤。残余物被蒸发的二氧化碳带走。

46. 发明授权

US06561220B2 Apparatus and method for increasing throughput in fluid processing 失效
公开(公告)号：US06561220B2
公开(公告)日：2003-05-13
申请号：US09840611
申请日：2001-04-23
申请人： Kenneth J. McCullough , Wayne M. Moreau , John P. Simons , Charles J. Taft , John M. Cotte
发明人： Kenneth J. McCullough , Wayne M. Moreau , John P. Simons , Charles J. Taft , John M. Cotte
IPC分类号： F17D104
CPC分类号： H01L21/67017 , Y10T137/85994 , Y10T137/86035
摘要： A method and an apparatus, the apparatus including appropriate valves and conduits, for increasing throughput in pressurized fluid processing including storing in a storage chamber of the apparatus a quantity of fluid at a pressure higher than a pressure at which an operation is to take place, while a processing chamber is depressurized to allow reception of a new object; sealing the processing chamber; and allowing fluid stored in the storage chamber to pass to the processing chamber to re-pressurize the processing chamber before performing the operation. The fluid may be preheated in the storage chamber to further reduce processing times.

47. 发明授权

US06451510B1 Developer/rinse formulation to prevent image collapse in resist 失效
标题翻译：显影剂/漂洗配方以防止抗蚀剂中的图像塌陷
公开(公告)号：US06451510B1
公开(公告)日：2002-09-17
申请号：US09790160
申请日：2001-02-21
申请人： Scott A. Messick , Wayne M. Moreau , Christopher F. Robinson
发明人： Scott A. Messick , Wayne M. Moreau , Christopher F. Robinson
IPC分类号： G03F732
CPC分类号： G03F7/322 , G03F7/32 , G03F7/40
摘要： An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.
摘要翻译：提供了一种用于在诸如半导体晶片的电子元件基板上显影光刻胶图案的装置和方法。该方法和装置使用特定定义的漂洗组合物依次使用特定定义的显影剂组合物，以显影曝光的光致抗蚀剂图案，然后漂洗显影图案。显影剂组合物和漂洗组合物都含有阴离子表面活性剂，并且当依次使用溶液时，已经发现提供了抗蚀剂图案，即使当诸如线宽小于150nm的长宽比较大的小特征大约3个。优选使用水坑开发和水泥漂洗工艺来开发和冲洗暴露的晶片。优选的阴离子表面活性剂是全氟烷基磺酸铵和全氟烷基羧酸铵。

48. 发明授权

US6136498A Polymer-bound sensitizer 失效
公开(公告)号：US6136498A
公开(公告)日：2000-10-24
申请号：US672804
申请日：1996-06-28
申请人： Premlatha Jagannathan , Leo L. Linehan , Wayne M. Moreau , Randolph J. Smith
发明人： Premlatha Jagannathan , Leo L. Linehan , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/111 , Y10S430/116 , Y10S430/123 , Y10S430/127 , Y10S430/128
摘要： A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.

49. 发明授权

US6057080A Top antireflective coating film 失效
标题翻译：顶级防反射涂膜
公开(公告)号：US6057080A
公开(公告)日：2000-05-02
申请号：US987073
申请日：1997-12-09
申请人： William R. Brunsvold , George J. Hefferon , Christopher F. Lyons , Wayne M. Moreau , Robert L. Wood
发明人： William R. Brunsvold , George J. Hefferon , Christopher F. Lyons , Wayne M. Moreau , Robert L. Wood
IPC分类号： G03F7/11 , C08L27/12 , G03F7/00 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/091 , G03F7/092
摘要： Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.
摘要翻译：水性可显影光致抗蚀剂组合物的图案转印的增强的保真度是通过含氟的顶部抗反射涂层实现的，其折射率近似等于下面的光致抗蚀剂的平方根，并且可在光致抗蚀剂的显影剂中除去。

50. 发明授权

US5240812A Top coat for acid catalyzed resists 失效
标题翻译：用于酸催化抗蚀剂的面漆
公开(公告)号：US5240812A
公开(公告)日：1993-08-31
申请号：US793884
申请日：1991-11-18
申请人： Willard E. Conley , Ranee W. Kwong , Richard J. Kvitek , Robert N. Lang , Christopher F. Lyons , Steve S. Miura , Wayne M. Moreau , Harbans S. Sachdev , Robert L. Wood
发明人： Willard E. Conley , Ranee W. Kwong , Richard J. Kvitek , Robert N. Lang , Christopher F. Lyons , Steve S. Miura , Wayne M. Moreau , Harbans S. Sachdev , Robert L. Wood
IPC分类号： G03F7/09
CPC分类号： G03F7/092
摘要： A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.
摘要翻译：用作酸催化抗蚀剂组合物的外涂膜的保护材料，其包含聚合物成膜化合物，其膜对有机和无机碱的蒸气是不可渗透的。

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