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    • 2. 发明授权
    • Method of adjusting a lithography system to enhance image quality
    • 调整光刻系统以提高图像质量的方法
    • US06476400B1
    • 2002-11-05
    • US09469159
    • 1999-12-21
    • Christopher F. RobinsonMichael S. GordonScott A. Messick
    • Christopher F. RobinsonMichael S. GordonScott A. Messick
    • G21K510
    • B82Y10/00B82Y40/00G03F7/70258G03F7/70591H01J37/21H01J37/304H01J37/3174H01J2237/31798
    • A method of adjusting a lithography system or tool to enhance image quality correction is presented. The method enhances image quality correction by using a reduced dose during exposure of the lithographic test patterns. A typical lithography system (tool) comprises an exposure column unit and a control unit. The exposure column unit generates a shaped beam and directs this shaped beam through lenses and a series of deflectors to a mask which is positioned on a movable stage. The control unit provides control management for the components of the exposure column unit. The system maximizes pattern resolution using a mask having test pattern geometries that are at least the same size as the geometries of the pattern of a production mask. The reduced exposure dose used for the lithographic test patterns results in greater sensitivity to small beam setup errors. This enables finer tuning of the lithographic tool through adjustments in lens currents and correction coil currents and thereby results in improved resolution for production integrated circuits.
    • 提出了一种调整光刻系统或工具以增强图像质量校正的方法。 该方法通过在光刻测试图案的曝光期间使用减少的剂量来增强图像质量校正。 典型的光刻系统(工具)包括曝光柱单元和控制单元。 曝光列单元产生成形光束并且将该成形光束通过透镜和一系列偏转器引导到位于可移动台上的掩模。 控制单元为曝光列单元的组件提供控制管理。 该系统使用具有与生产掩模的图案的几何尺寸至少相同的尺寸的测试图案几何的掩模来最大化图案分辨率。 用于光刻测试图案的减少的曝光剂量导致对小光束设置误差的更大的灵敏度。 这样可以通过调整透镜电流和校正线圈电流来对光刻工具进行更精细的调谐,从而为生产集成电路提供更好的分辨率。
    • 3. 发明授权
    • Developer/rinse formulation to prevent image collapse in resist
    • 显影剂/漂洗配方以防止抗蚀剂中的图像塌陷
    • US06451510B1
    • 2002-09-17
    • US09790160
    • 2001-02-21
    • Scott A. MessickWayne M. MoreauChristopher F. Robinson
    • Scott A. MessickWayne M. MoreauChristopher F. Robinson
    • G03F732
    • G03F7/322G03F7/32G03F7/40
    • An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.
    • 提供了一种用于在诸如半导体晶片的电子元件基板上显影光刻胶图案的装置和方法。 该方法和装置使用特定定义的漂洗组合物依次使用特定定义的显影剂组合物,以显影曝光的光致抗蚀剂图案,然后漂洗显影图案。 显影剂组合物和漂洗组合物都含有阴离子表面活性剂,并且当依次使用溶液时,已经发现提供了抗蚀剂图案,即使当诸如线宽小于150nm的长宽比较大的小特征 大约3个。 优选使用水坑开发和水泥漂洗工艺来开发和冲洗暴露的晶片。 优选的阴离子表面活性剂是全氟烷基磺酸铵和全氟烷基羧酸铵。