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41. 发明授权

US07880721B2 Wave receiving device and method of determining wave reception 有权
标题翻译：波接收装置及确定波接收的方法
公开(公告)号：US07880721B2
公开(公告)日：2011-02-01
申请号：US11350926
申请日：2006-02-10
申请人： Kenji Suzuki , Hiroyuki Kobayashi , Syuuji Murayama , Kenji Inamoto
发明人： Kenji Suzuki , Hiroyuki Kobayashi , Syuuji Murayama , Kenji Inamoto
IPC分类号： G09G5/08
CPC分类号： G01S11/16
摘要： An ultrasonic receiver receives an ultrasonic signal having a period in which an amplitude thereof progressively increases as time elapses. A pattern matching unit determines whether a comparative pattern, which is generated as a result of comparison between the respective maximum amplitude values of a plurality of successive waves of said wave signal and a threshold value set by a threshold setting unit, matches a reference pattern or not during the period of the ultrasonic signal. The pattern matching unit determines that the ultrasonic receiver has successfully received the ultrasonic signal if the comparative pattern matches the reference pattern.
摘要翻译：超声波接收器接收具有时间间隔逐渐增加的周期的超声波信号。模式匹配单元确定作为所述波信号的多个连续波的各个最大振幅值与由阈值设置单元设置的阈值之间的比较结果而产生的比较模式是否匹配参考模式或不是在超声波信号的期间。如果比较模式与参考模式匹配，模式匹配单元确定超声波接收器已成功接收到超声波信号。

42. 发明授权

US07871452B2 Particulate filter 有权
标题翻译：颗粒过滤器
公开(公告)号：US07871452B2
公开(公告)日：2011-01-18
申请号：US12243171
申请日：2008-10-01
申请人： Hiroshi Yamada , Kenji Suzuki , Koichiro Harada , Kenji Okamoto , Akihide Takami , Susumu Mineoi , Hirosuke Sumida
发明人： Hiroshi Yamada , Kenji Suzuki , Koichiro Harada , Kenji Okamoto , Akihide Takami , Susumu Mineoi , Hirosuke Sumida
IPC分类号： B01D53/94 , B01J23/68
CPC分类号： B01J23/10 , B01D53/944 , B01D53/945 , B01D2255/1021 , B01D2255/206 , B01D2255/20715 , B01D2255/407 , B01D2257/404 , B01D2257/702 , B01D2258/012 , B01J23/002 , B01J23/63 , B01J35/0006 , B01J37/0036 , B01J37/0201 , B01J37/024 , B01J37/0248 , B01J37/031 , B01J2523/00 , Y02T10/22 , B01J2523/3725 , B01J2523/3787 , B01J2523/48 , B01J2523/35 , B01J2523/36 , B01J2523/3718 , B01J2523/3706 , B01J2523/3737
摘要： Disclosed is a particulate filter, which is adapted to be disposed in an exhaust passage of an engine to trap particulate matter contained in exhaust gas discharged from the engine. The particulate filter comprises a filter body having a porous partition wall which defines a plurality of exhaust gas channels allowing the exhaust gas to pass therethrough, and a catalyst layer formed on a surface of the porous partition wall. The catalyst layer includes a Zr-based composite oxide which contains zirconium (Zr), and a rare-earth metal except cerium, wherein a content ratio of an oxide of the non-cerium rare-earth metal to a total amount of ZrO2 and the oxide of the non-cerium rare-earth metal in the Zr-based composite oxide is set in the range of greater than 33 mol % to less than 40 mol %. The particulate filter of the present invention can achieve a higher PM burning rate to burn PM within a shorter period of time. In addition, the higher PM burning rate makes it possible to provide enhanced fuel economy performance in an engine designed to perform a post-injection control.
摘要翻译：公开了一种微粒过滤器，其适于设置在发动机的排气通道中以捕集从发动机排出的废气中所含的颗粒物质。颗粒过滤器包括具有多孔分隔壁的过滤体，该多孔分隔壁限定允许废气通过的多个废气通道，以及形成在多孔分隔壁的表面上的催化剂层。催化剂层包括含有锆（Zr）的Zr基复合氧化物和除了铈之外的稀土金属，其中非铈铈稀土金属的氧化物与ZrO 2的总量的含量比和 Zr系复合氧化物中的非铈稀土类金属的氧化物的含量设定在大于33摩尔％至小于40摩尔％的范围内。本发明的微粒过滤器可以在更短的时间内实现更高的PM燃烧速率来燃烧PM。此外，较高的PM燃烧速率使得可以在设计成执行后喷射控制的发动机中提供增强的燃料经济性能。

43. 发明授权

US07867560B2 Method for performing a vapor deposition process 有权
标题翻译：进行气相沉积工艺的方法
公开(公告)号：US07867560B2
公开(公告)日：2011-01-11
申请号：US11692801
申请日：2007-03-28
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4412 , C23C16/4481 , C23C16/45561
摘要： A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.
摘要翻译：描述了一种执行气相沉积工艺的方法。气相沉积工艺涉及使用固相或液相前体在基片上沉积诸如钌（Ru），铼（Re）或铑（Rh）薄膜的薄膜。该方法有助于气体管线的启动，以向沉积系统提供稀释气体，载气和前体蒸汽，衬底的预热和加热，膜前体蒸发系统的预调节，以及例如载气和前体蒸气的流动稳定。

44. 发明授权

US07858522B2 Method for reducing carbon monoxide poisoning in a thin film deposition system 有权
标题翻译：降低薄膜沉积系统中一氧化碳中毒的方法
公开(公告)号：US07858522B2
公开(公告)日：2010-12-28
申请号：US11277919
申请日：2006-03-29
申请人： Kenji Suzuki , Atsushi Gomi
发明人： Kenji Suzuki , Atsushi Gomi
IPC分类号： H01L21/44
CPC分类号： C23C16/16 , C23C16/4481 , C23C16/45512 , H01L21/28556 , H01L21/76843
摘要： A method for introducing a precursor vapor to a process chamber configured for forming a thin film on a substrate is described. The method includes transporting a process gas containing metal precursor vapor and a CO delivery gas to a process chamber, and introducing a CO saturation gas to the precursor vapor in the process chamber and optionally adjusting the spatial distribution of the CO saturation gas addition in order to affect improvements to the properties of the deposited film.
摘要翻译：描述了将前体蒸气引入配置用于在基板上形成薄膜的处理室的方法。该方法包括将含有金属前体蒸汽和CO输送气体的处理气体输送到处理室，并将CO饱和气体引入处理室中的前体蒸气，并任选地调节CO饱和气体添加的空间分布，以便影响沉积膜性能的改善。

45. 发明授权

US07846256B2 Ampule tray for and method of precursor surface area 有权
标题翻译：安培盘和前体表面积方法
公开(公告)号：US07846256B2
公开(公告)日：2010-12-07
申请号：US11678122
申请日：2007-02-23
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： C23C16/00 , B01D7/00
CPC分类号： C23C16/4481
摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain a solid precursor, and permit the flow of a carrier gas. Furthermore, each tray comprises precursor stabilization elements designed to maintain a substantially level solid precursor powder during transport of the multi-tray precursor evaporation system.
摘要翻译：描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。多托盘膜前体蒸发系统包括一个或多个托盘。每个托盘构造成支撑和保持固体前体，并且允许载气的流动。此外，每个托盘包括被设计成在运输多托盘前体蒸发系统期间维持大致水平的固体前体粉末的前体稳定化元件。

46. 发明申请

US20100229677A1 AUTOMATIC TRANSMISSION CONTROL UNIT AND AUTOMATIC TRANSMISSION INCLUDING THE SAME 失效
标题翻译：自动变速器控制单元和自动变速器，包括它们
公开(公告)号：US20100229677A1
公开(公告)日：2010-09-16
申请号：US12438409
申请日：2007-11-22
申请人： Naotaka Murakami , Kenji Suzuki , Jun Takamatsu
发明人： Naotaka Murakami , Kenji Suzuki , Jun Takamatsu
IPC分类号： F16H57/02 , H01R13/66
CPC分类号： F16H61/0006 , F16H57/027 , F16H57/029 , H01R13/112 , H01R13/629 , Y10T74/2186
摘要： A control unit that is not subjected to any external force except its own weight until completion of assembly, and is easily mounted to an automatic transmission. A connector facing an inside connector provided inside an automatic transmission is provided at a lower end of a unit main body, and another connecter exposed to the outside of the automatic transmission is provided at an upper end of the unit main body. The unit main body includes a control device such as a microcomputer for controlling the automatic transmission. The unit main body is guided by a moving-side guide portion formed in a lower part thereof and protrusions provided as a fixing-side guide portion, thereby connecting the lower end connecter to the connector. The automatic transmission and the unit main body are sealed by a flange and a packing of a sealing mechanism portion. The flange covers from above a through hole for inserting the unit main body of the automatic transmission therein.
摘要翻译：控制单元在组装完成之前不受外力的影响，并且易于安装到自动变速器上。面向设置在自动变速器内部的内部连接器的连接器设置在单元主体的下端，并且暴露于自动变速器外部的另一连接器设置在单元主体的上端。单元主体包括用于控制自动变速器的诸如微型计算机的控制装置。单元主体由形成在其下部的可动侧引导部和作为固定侧引导部设置的突起引导，从而将下端连接器连接到连接器。自动变速器和单元主体由法兰和密封机构部分的密封件密封。凸缘从通孔上方覆盖，用于将自动变速器的单元主体插入其中。

47. 发明授权

US07790626B2 Plasma sputtering film deposition method and equipment 有权
标题翻译：等离子体溅射膜沉积方法和设备
公开(公告)号：US07790626B2
公开(公告)日：2010-09-07
申请号：US11577505
申请日：2005-10-18
申请人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/00
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/3471 , H01J37/34 , H01J2237/3327 , H01L21/76844 , H01L21/76865 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.
摘要翻译：本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

48. 发明授权

US07768101B2 Semiconductor device having an insulated gate bipolar transistor and a free wheel diode 有权
标题翻译：具有绝缘栅双极晶体管和续流二极管的半导体器件
公开(公告)号：US07768101B2
公开(公告)日：2010-08-03
申请号：US11684772
申请日：2007-03-12
申请人： Kenji Suzuki , Hideki Takahashi , Yoshifumi Tomomatsu
发明人： Kenji Suzuki , Hideki Takahashi , Yoshifumi Tomomatsu
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/456 , H01L29/66348
摘要： A p-type collector region of an IGBT and an n-type cathode region of a free wheel diode are alternately formed in a second main surface of a semiconductor substrate. A back electrode is formed on the second main surface so as to be in contact with both of the p-type collector region and the n-type cathode region, and has a titanium layer, a nickel layer and a gold layer that are successively stacked from the side of the second main surface. A semiconductor device capable of obtaining a satisfactory ON voltage in any of conduction of an insulated gate field effect transistor and conduction of the free wheel diode as well as a manufacturing method thereof can thus be obtained.
摘要翻译：在半导体衬底的第二主表面中交替形成IGBT的p型集电极区域和续流二极管的n型阴极区域。背面电极形成在第二主表面上以与p型集电极区域和n型阴极区域接触，并且具有依次层叠的钛层，镍层和金层从第二主表面侧。因此，可以获得能够在隔离栅场效应晶体管的导通和续流二极管的导通中获得令人满意的导通电压的半导体器件及其制造方法。

49. 发明授权

US07678421B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US07678421B2
公开(公告)日：2010-03-16
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/16
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

50. 发明授权

US07652850B2 Rotating disk type storage unit with reduced vibration 失效
标题翻译：旋转盘式存储单元减振
公开(公告)号：US07652850B2
公开(公告)日：2010-01-26
申请号：US11132049
申请日：2005-05-17
申请人： Kenji Suzuki , Toshihiko Shimizu , Shingo Tsuda , Kouki Uefune
发明人： Kenji Suzuki , Toshihiko Shimizu , Shingo Tsuda , Kouki Uefune
IPC分类号： G11B21/08 , G11B5/55
CPC分类号： G11B5/56 , G11B5/5565
摘要： Embodiments of the invention decrease bending vibrations and torsional vibrations of a voice coil generated by off-plane vibrational forces on the voice coil to reduce noise and to enable a large capacity. In one embodiment, a rotating disk type storage unit comprises a rotating disk recording medium, a head that moves radially relative to the rotating disk recording medium to perform recording or reproduction, a turnable actuator having mounted on one side thereof the head, and a voice coil motor to drive the actuator. The voice coil motor comprises a voice coil mounted on the other side end of the actuator, and a magnet arranged in opposition to the voice coil. A magnet outer periphery of the magnet disposed distant from an actuator turning center is formed to be arcuately concave in shape, and the concave-shaped outer periphery intersects the voice coil.
摘要翻译：本发明的实施例减少由音圈上的离平面振动产生的音圈的弯曲振动和扭转振动，以减少噪声并实现大容量。在一个实施例中，旋转盘型存储单元包括旋转盘记录介质，相对于旋转盘记录介质径向移动以执行记录或再现的头，安装在头的一侧的可转动致动器和声音线圈电机驱动执行机构。音圈电机包括安装在致动器的另一侧的音圈和与音圈相对布置的磁体。远离致动器转动中心设置的磁体的磁体外周形成为弧形的凹状，凹状的外周与音圈相交。

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