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1. 发明授权

US07790626B2 Plasma sputtering film deposition method and equipment 有权
标题翻译：等离子体溅射膜沉积方法和设备
公开(公告)号：US07790626B2
公开(公告)日：2010-09-07
申请号：US11577505
申请日：2005-10-18
申请人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/00
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/3471 , H01J37/34 , H01J2237/3327 , H01L21/76844 , H01L21/76865 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.
摘要翻译：本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

2. 发明申请

US20080200002A1 Plasma Sputtering Film Deposition Method and Equipment 审中-公开
标题翻译：等离子体溅射膜沉积方法和设备
公开(公告)号：US20080200002A1
公开(公告)日：2008-08-21
申请号：US11577535
申请日：2005-10-18
申请人： Kenji Suzuki , Taro Ikeda , Tatsuo Hatano , Yasushi Mizusawa
发明人： Kenji Suzuki , Taro Ikeda , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/02 , H01L21/44 , C23C14/34
CPC分类号： H01L21/2855 , C03C17/09 , C03C2218/153 , C03C2218/33 , C23C14/046 , C23C14/14 , C23C14/345 , C23C14/3464 , C23C14/352 , H01J37/32706 , H01J37/34 , H01L21/2885 , H01L21/76877
摘要： A method for generating metal ions by sputtering a metal target (56) by plasma, attracting the metal ions by bias power to a target object S which is to be processed and is mounted on a mounting table (20) in a processing vessel, and depositing a metal film (74) on the target object having a recess (2) thus filling the recess. The bias power is set to realize such a state as the metal deposition rate by attraction of metal ions is substantially balanced with the etching rate of plasma sputter etching on the surface of the target object. Consequently, the recess in the target object can be filled with metal without causing such a defect as void.
摘要翻译：一种通过用等离子体溅射金属靶（56）来产生金属离子的方法，通过偏置功率将金属离子吸引到待处理的目标物体S上并安装在处理容器中的安装台（20）上，以及在具有凹部（2）的目标物体上沉积金属膜（74），从而填充凹部。偏置功率被设定为实现这样的状态，即通过金属离子的吸引的金属沉积速率与目标物体的表面上的等离子体溅射蚀刻的蚀刻速率基本平衡。因此，目标物体中的凹部可以用金属填充，而不会造成空隙的缺陷。

3. 发明申请

US20070234955A1 METHOD AND APPARATUS FOR REDUCING CARBON MONOXIDE POISONING AT THE PERIPHERAL EDGE OF A SUBSTRATE IN A THIN FILM DEPOSITION SYSTEM 审中-公开
标题翻译：用于减少薄膜沉积系统中底物的外围边缘上的一氧化碳沉淀的方法和装置
公开(公告)号：US20070234955A1
公开(公告)日：2007-10-11
申请号：US11277922
申请日：2006-03-29
申请人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
发明人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/16 , C23C16/4402 , C23C16/45574
摘要： A method and apparatus is described for reducing CO poisoning of a thin metal film formed on a substrate using a metal carbonyl precursor. The thin metal film is formed on the substrate resting on a substrate holder in a thin film deposition system. The substrate holder comprises a shield ring positioned on a peripheral edge of the substrate holder and configured to surround the peripheral edge of the substrate, whereby the shield ring reduces the production of CO by-products at the peripheral edge of the substrate.
摘要翻译：描述了一种用于减少使用羰基金属前体在衬底上形成的薄金属膜的CO中毒的方法和装置。在薄膜沉积系统中的基板保持器上的基板上形成薄金属膜。衬底保持器包括位于衬底保持器的外围边缘上并被构造成围绕衬底的周边边缘的屏蔽环，由此屏蔽环减小了在衬底的周缘处的CO副产物的产生。

4. 发明申请

US20070215048A1 Method and apparatus for reducing particle contamination in a deposition system 有权
标题翻译：用于减少沉积系统中的颗粒污染的方法和装置
公开(公告)号：US20070215048A1
公开(公告)日：2007-09-20
申请号：US11377920
申请日：2006-03-16
申请人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
发明人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/45574
摘要： A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.
摘要翻译：描述了用于减少沉积系统中的基底的颗粒污染的方法和系统。沉积系统包括设置在其中的一个或多个颗粒扩散器，并且构造成防止或部分地防止膜前体颗粒通过，或破坏或部分破坏膜前体颗粒。颗粒扩散器可以安装在膜前体蒸发系统或蒸汽输送系统或蒸汽分配系统中，或者其两个或多个。

5. 发明授权

US08268078B2 Method and apparatus for reducing particle contamination in a deposition system 有权
标题翻译：用于减少沉积系统中的颗粒污染的方法和装置
公开(公告)号：US08268078B2
公开(公告)日：2012-09-18
申请号：US11377920
申请日：2006-03-16
申请人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
发明人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/45574
摘要： A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.
摘要翻译：描述了用于减少沉积系统中的基底的颗粒污染的方法和系统。沉积系统包括设置在其中的一个或多个颗粒扩散器，并且构造成防止或部分地防止膜前体颗粒通过，或破坏或部分破坏膜前体颗粒。颗粒扩散器可以安装在膜前体蒸发系统或蒸汽输送系统或蒸汽分配系统中，或者其两个或多个。

6. 发明授权

US07799681B2 Method for forming a ruthenium metal cap layer 有权
标题翻译：形成钌金属盖层的方法
公开(公告)号：US07799681B2
公开(公告)日：2010-09-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

7. 发明申请

US20100015798A1 METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER 有权
标题翻译：形成金属金属层的方法
公开(公告)号：US20100015798A1
公开(公告)日：2010-01-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

8. 发明申请

US20070218200A1 Method and apparatus for reducing particle formation in a vapor distribution system 审中-公开
标题翻译：用于减少蒸气分配系统中的颗粒形成的方法和装置
公开(公告)号：US20070218200A1
公开(公告)日：2007-09-20
申请号：US11377237
申请日：2006-03-16
申请人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
发明人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4402 , C23C16/4481 , C23C16/45512 , C23C16/45565 , C23C16/45574
摘要： A method and system is described for reducing particle contamination in a vapor distribution system. The vapor distribution system comprises a housing and a vapor distribution head comprising a plurality of openings configured to introduce a film precursor vapor to a deposition system. The housing and vapor distribution head define a plenum coupled to a film precursor evaporation system, and configured to receive the film precursor vapor from the evaporation system and distribute the film precursor vapor within the deposition system through the plurality of openings. In order to reduce particle contamination, the vapor distribution system is designed to reduce the difference, or ratio, between the pressure in the plenum and the pressure in the deposition system. For example, the plenum pressure can be less than twice the pressure in the process space, or can be less than 50 mTorr, 30 mTorr or even 20 mTorr than the pressure in the process space.
摘要翻译：描述了一种用于减少蒸气分配系统中的颗粒污染的方法和系统。蒸气分配系统包括壳体和蒸汽分配头，蒸汽分配头包括多个开口，其被配置为将膜前体蒸气引入沉积系统。壳体和蒸气分配头限定了与膜前体蒸发系统耦合的增压室，并且构造成从蒸发系统接收膜前体蒸汽并且通过多个开口将膜前体蒸汽分散在沉积系统内。为了减少颗粒污染，蒸汽分配系统被设计成减小气室中的压力与沉积系统中的压力之间的差异或比例。例如，充气压力可以小于过程空间中的压力的两倍，或者可以小于处理空间中的压力的50mTorr，30mTorr或甚至20mTorr。

9. 发明授权

US09506416B2 Inter-cylinder air-fuel ratio variation abnormality detection apparatus for multicylinder internal combustion engine 有权
标题翻译：用于多缸内燃机的缸内空燃比变化异常检测装置
公开(公告)号：US09506416B2
公开(公告)日：2016-11-29
申请号：US14095567
申请日：2013-12-03
申请人： Kenji Suzuki , Hiroshi Miyamoto , Yasushi Iwazaki
发明人： Kenji Suzuki , Hiroshi Miyamoto , Yasushi Iwazaki
IPC分类号： F02D41/00 , F02D41/14
CPC分类号： F02D41/1495 , F02D41/0085 , F02D41/1456
摘要： A first parameter correlated with a degree of a variation in the output from the air-fuel ratio sensor is calculated. A possible range of a second parameter representing a degree of a variation in air-fuel ratio among the cylinders is determined based on the first parameter. The first parameter is calculated with an air-fuel ratio of a predetermined cylinder forcibly changed. A difference between the unchanged first parameter and the forcibly changed first parameter is determined. A first characteristic representing a relation between the second parameter and the difference is determined based on the possible range of the second parameter and the difference. One of the determination value and the first parameter calculated before the forced change is corrected based on inclination of the determined first characteristic.
摘要翻译：计算与空燃比传感器的输出的变化程度相关的第一参数。基于第一参数来确定表示气缸中的空燃比的变化程度的第二参数的可能范围。第一参数是以预定的气缸的空燃比强制变化的方式计算的。确定未改变的第一参数和强制改变的第一参数之间的差异。基于第二参数的可能范围和差异来确定代表第二参数和差异之间的关系的第一特征。基于确定的第一特性的倾斜度来校正在强制改变之前计算的确定值和第一参数中的一个。

10. 发明授权

US09485328B2 Game control device, game program, game control method and game system 有权
标题翻译：游戏控制装置，游戏程序，游戏控制方法和游戏系统
公开(公告)号：US09485328B2
公开(公告)日：2016-11-01
申请号：US13409499
申请日：2012-03-01
申请人： Yosuke Abe , Minoru Yoneyama , Kenji Suzuki , Yuji Minohoshi , Masaki Morimoto , Kiwamu Takahashi , Mitsuru Kida , Kosuke Shimizu
发明人： Yosuke Abe , Minoru Yoneyama , Kenji Suzuki , Yuji Minohoshi , Masaki Morimoto , Kiwamu Takahashi , Mitsuru Kida , Kosuke Shimizu
IPC分类号： A63F13/58 , H04L29/06 , A63F13/812
CPC分类号： H04L67/38 , A63F13/58 , A63F13/812 , A63F2300/5573 , A63F2300/6018
摘要： The game control device may include a storage unit, a first match-up executing unit, a character ability updating unit, and a second match-up executing unit. The storage unit stores an ability value of each player character. The first match-up executing unit executes a first match-up between two player characters in response to input of a communication terminal, and to determine a result of the first match-up based on the stored ability value of each player character. The character ability updating unit updates, based on the result of the first match-up, the ability values of the two player characters, and causes the storage unit to store the updated ability values. The second match-up executing unit executes a second match-up between player characters independently from the first match-up without input of the communication terminal, and determines a result of the second match-up based on the stored ability value of each player character.
摘要翻译：游戏控制装置可以包括存储单元，第一匹配执行单元，字符能力更新单元和第二匹配执行单元。存储单元存储每个玩家角色的能力值。第一匹配执行单元响应于通信终端的输入执行两个播放器字符之间的第一匹配，并且基于每个游戏者角色的存储能力值来确定第一匹配的结果。角色能力更新单元基于第一匹配的结果更新两个玩家角色的能力值，并使存储单元存储更新的能力值。第二匹配执行单元在没有输入通信终端的情况下独立于第一匹配执行玩家角色之间的第二匹配，并且基于每个玩家角色的存储能力值来确定第二匹配的结果。

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