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1. 发明授权

US07678421B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US07678421B2
公开(公告)日：2010-03-16
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/16
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

2. 发明授权

US07270848B2 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US07270848B2
公开(公告)日：2007-09-18
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kenji Suzuki , Emmanuel P. Guidotti , Gerrit J. Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

3. 发明授权

US07345184B2 Method and system for refurbishing a metal carbonyl precursor 失效
标题翻译：用于翻新金属羰基前体的方法和系统
公开(公告)号：US07345184B2
公开(公告)日：2008-03-18
申请号：US11095448
申请日：2005-03-31
申请人： Kenji Suzuki , Gerrit J. Leusink , Fenton R. McFeely
发明人： Kenji Suzuki , Gerrit J. Leusink , Fenton R. McFeely
IPC分类号： C07F15/00 , C07F13/00 , C07F11/00
CPC分类号： C23C16/4481 , C23C16/4485 , C23C16/45593
摘要： A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.
摘要翻译：一种用于翻新金属羰基前体的方法和系统。该方法包括提供含有含有未反应和部分反应的金属羰基前体的金属羰基前体的金属前体蒸发系统，其将含CO气体通过金属前体蒸发系统流动到与金属前体蒸发流体连通的前体收集系统系统将未反应的金属羰基前体蒸气转移到前体收集系统中，并在前体收集系统中收集转移的金属羰基前体。提供了一种用于监测至少一种金属羰基前体参数以确定羰基金属前体的状态以及需要翻新金属羰基前体的方法。

4. 发明授权

US07419702B2 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US07419702B2
公开(公告)日：2008-09-02
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/00 , B05D3/04
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

5. 发明申请

US20110285021A1 NOBLE METAL CAP FOR INTERCONNECT STRUCTURES 有权
标题翻译：用于互连结构的NOBLE金属盖
公开(公告)号：US20110285021A1
公开(公告)日：2011-11-24
申请号：US13191090
申请日：2011-07-26
申请人： Chih-Chao Yang , Daniel C. Edelstein , Fenton R. McFeely
发明人： Chih-Chao Yang , Daniel C. Edelstein , Fenton R. McFeely
IPC分类号： H01L23/52 , B82Y99/00
CPC分类号： H01L21/76826 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.
摘要翻译：提供了包括具有约3.0或更小介电常数的介电材料的互连结构。该低k电介质材料具有至少一个具有嵌入其中的上表面的导电材料。电介质材料还具有在形成贵金属盖之前被制成疏水性的表面层。贵金属盖直接位于至少一个导电材料的上表面上。由于在电介质材料上存在疏水表面层，贵金属盖基本上不会延伸到与至少一种导电材料相邻的电介质材料的疏水表面层上，并且没有贵金属帽的金属残留物沉积形式在该疏水电介质表面上。

6. 发明授权

US07863083B2 High temperature processing compatible metal gate electrode for pFETS and methods for fabrication 有权
标题翻译：用于pFETS的高温处理兼容金属栅电极及其制造方法
公开(公告)号：US07863083B2
公开(公告)日：2011-01-04
申请号：US12197845
申请日：2008-08-25
申请人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
发明人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
IPC分类号： H01L21/00 , H01L21/76 , H01L21/266 , H01L21/425
CPC分类号： H01L29/495 , H01L21/28079 , H01L21/3003
摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.
摘要翻译：描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。这些金属的工作功能使其与当前的pFET要求兼容。例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术当Re沉积时使用材料。

7. 发明授权

US07749802B2 Process for chemical vapor deposition of materials with via filling capability and structure formed thereby 失效
标题翻译：具有通孔填充能力和由此形成的结构的材料的化学气相沉积工艺
公开(公告)号：US07749802B2
公开(公告)日：2010-07-06
申请号：US11621365
申请日：2007-01-09
申请人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
发明人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
IPC分类号： H01L21/00 , H01L21/82 , H01L21/20
CPC分类号： C23C16/30 , H01L21/28556 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1616 , H01L45/1683 , Y10T428/249994
摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.
摘要翻译：提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。本发明的CVD方法允许在宽范围的值范围内控制GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料兼容。除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

8. 发明申请

US20100009164A1 PROCESS FOR CHEMICAL VAPOR DEPOSITION OF MATERIALS WITH VIA FILLING CAPABILITY AND STRUCTURE FORMED THEREBY 审中-公开
标题翻译：通过填充能力和结构形成的材料的化学气相沉积方法
公开(公告)号：US20100009164A1
公开(公告)日：2010-01-14
申请号：US12540923
申请日：2009-08-13
申请人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
发明人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
IPC分类号： B32B3/26
CPC分类号： C23C16/30 , H01L21/28556 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1616 , H01L45/1683 , Y10T428/249994
摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.
摘要翻译：提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。本发明的CVD方法允许控制在宽范围的值范围内的GeSb化学计量和本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料相兼容。除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

9. 发明申请

US20080293259A1 METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY 有权
标题翻译：形成具有高移动性的金属/高k栅极堆叠的方法
公开(公告)号：US20080293259A1
公开(公告)日：2008-11-27
申请号：US12187767
申请日：2008-08-07
申请人： Wanda Andreoni , Alessandro C. Callegari , Eduard A. Cartier , Alessandro Curioni , Christopher P. D'Emic , Evgeni Gousev , Michael A. Gribelyuk , Paul C. Jamison , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Carlo A. Pignedoli , Joseph F. Shepard, JR. , Sufi Zafar
发明人： Wanda Andreoni , Alessandro C. Callegari , Eduard A. Cartier , Alessandro Curioni , Christopher P. D'Emic , Evgeni Gousev , Michael A. Gribelyuk , Paul C. Jamison , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Carlo A. Pignedoli , Joseph F. Shepard, JR. , Sufi Zafar
IPC分类号： H01L21/263
CPC分类号： H01L21/28176 , H01L29/4908 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6656 , H01L29/66575 , H01L29/66772 , H01L29/7833 , H01L29/78684
摘要： The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.
摘要翻译：本发明提供具有高移动性和低界面电荷的栅叠层结构，以及包括其的半导体器件，即金属氧化物半导体场效应晶体管（MOSFET）。在半导体器件中，本发明的栅极堆叠结构位于衬底和覆盖栅极导体之间。本发明还提供一种制造本发明的栅叠层结构的方法，其中采用了高温退火工艺（大约800℃）。本发明中使用的高温退火提供了具有大约8×10 10电荷/ cm 2或更小的电荷泵浦的界面状态密度，约250cm 2 / s以上的峰值迁移率和基本上没有约6.0×10 12反相电荷/ cm 2以上的迁移率降解。

10. 发明申请

US20080166586A1 METAL CATALYZED SELECTIVE DEPOSITION OF MATERIALS INCLUDING GERMANIUM AND ANTIMONY 有权
标题翻译：金属催化选择性沉积材料，包括德国和反垄断
公开(公告)号：US20080166586A1
公开(公告)日：2008-07-10
申请号：US11621389
申请日：2007-01-09
申请人： Supratik Guha , Fenton R. McFeely , John J. Yurkas
发明人： Supratik Guha , Fenton R. McFeely , John J. Yurkas
IPC分类号： H01L29/12 , C23C16/00
CPC分类号： C23C16/04 , C23C16/30 , Y10T428/12528
摘要： A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.
摘要翻译：提供了一种用于选择性地将GeSb材料沉积到衬底表面上的化学气相沉积（CVD）方法，其中能够与锗形成共晶合金的金属用于催化GeSb材料的生长。还提供了一种结构，其包括位于基底的预选区域上的GeSb材料。根据本发明，GeSb材料夹在用于催化GeSb生长的下金属层和GeSb材料生长期间形成的上表面金属层之间。

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