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41. 发明申请

US20090209108A1 SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理方法
公开(公告)号：US20090209108A1
公开(公告)日：2009-08-20
申请号：US12388858
申请日：2009-02-19
申请人： Tsuyoshi MORIYA , Eiichi Nishimura
发明人： Tsuyoshi MORIYA , Eiichi Nishimura
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/02068
摘要： A substrate processing method that can prevent a decrease in the yield of semiconductor devices manufactured from substrates. A gas containing fluorine atoms is supplied into a chamber, and then chlorine gas is supplied into the chamber. Further, a gas containing nitrogen atoms is supplied into the chamber.
摘要翻译：可以防止由基板制造的半导体器件的产量降低的基板处理方法。将含有氟原子的气体供给到室内，然后向室内供给氯气。此外，将含有氮原子的气体供给到室中。

42. 发明申请

US20090011605A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090011605A1
公开(公告)日：2009-01-08
申请号：US12216154
申请日：2008-06-30
申请人： Yuki Chiba , Eiichi Nishimura , Ryuichi Asako
发明人： Yuki Chiba , Eiichi Nishimura , Ryuichi Asako
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01J37/32522 , H01J2237/2001 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814 , H01L21/76826
摘要： The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.
摘要翻译：本发明是一种半导体器件的制造装置，其特征在于，包括：处理容器，其具有载置基板的载物台，所述基板具有低介电常数膜，所述低介电常数膜形成在所述低介电常数膜的上层中 ; 蚀刻气体供给单元，其将蚀刻气体供给到所述处理容器中，以蚀刻所述低介电常数膜; 灰化单元意味着在低介电常数薄膜进行了蚀刻处理之后，将灰化气体供给到处理容器中，以使在低介电常数膜的上层形成的抗蚀剂图案灰化; 等离子体产生装置，其通过向处理容器中的蚀刻气体和灰化气体供应能量来产生等离子体; 在低介电常数薄膜已进行灰化处理之后，向该处理容器中供给二过代甲烷气体的单元，以回收已被等离子体损坏的低介电常数膜的损伤层; 以及加热单元，其使得二辛酰甲烷气体在加热条件下与基材的表面接触。

43. 发明申请

US20080124936A1 MANUFACTURING METHOD OF CAPACITOR ELECTRODE, MANUFACTURING SYSTEM OF CAPACITOR ELECTRODE, AND STORAGE MEDIUM 有权
标题翻译：电容器电极的制造方法，电容器电极的制造系统和存储介质
公开(公告)号：US20080124936A1
公开(公告)日：2008-05-29
申请号：US11946289
申请日：2007-11-28
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/67069 , H01L28/91
摘要： A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
摘要翻译：一种通过去除衬底表面上的氧化硅膜来制造电容器电极的方法，包括：通过提供含有卤素元素的气体将氧化硅膜转化为反应产物，以与氧化硅膜发生化学反应同时控制温度的基底到第一工艺温度; 以及在将基板的温度控制到高于第一处理温度的第二处理温度的同时除去转化为反应产物的氧化硅膜。氧化硅膜是BPSG膜。

44. 发明申请

US20070212816A1 SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：基板加工系统
公开(公告)号：US20070212816A1
公开(公告)日：2007-09-13
申请号：US11674799
申请日：2007-02-14
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： H01L21/00
CPC分类号： H01L21/6831 , H01J37/32743 , H01L21/67069 , H01L21/67207
摘要： A substrate processing system which enables scratching of the rear surface of a substrate to be prevented. An etching apparatus carries out plasma etching processing on a substrate. The etching apparatus having therein an electrostatic chuck that electrostatically attracts the substrate. The electrostatic chuck contacts a rear surface of the substrate. The etching apparatus is connected to a vacuum-type substrate transferring apparatus. A protective film forming apparatus forms a protective film on the rear surface of the substrate before the plasma etching processing is carried out. A protective film removing apparatus removes the protective film from the rear surface of the substrate after the plasma etching processing has been carried out.
摘要翻译：一种基板处理系统，其能够防止要防止的基板的后表面。蚀刻装置对基板进行等离子体蚀刻处理。其中具有静电吸附基板的静电卡盘的蚀刻装置。静电卡盘接触基板的后表面。蚀刻装置连接到真空型基板转印装置。在进行等离子体蚀刻处理之前，保护膜形成装置在基板的后表面上形成保护膜。在执行等离子体蚀刻处理之后，保护膜去除装置从基板的后表面去除保护膜。

45. 发明申请

US20070141843A1 SUBSTRATE PERIPHERAL FILM-REMOVING APPARATUS AND SUBSTRATE PERIPHERAL FILM-REMOVING METHOD 审中-公开
标题翻译：基板外围膜去除装置和基板外围膜去除方法
公开(公告)号：US20070141843A1
公开(公告)日：2007-06-21
申请号：US11564662
申请日：2006-11-29
申请人： Eiichi Nishimura , Kaoru Maekawa
发明人： Eiichi Nishimura , Kaoru Maekawa
IPC分类号： C23F1/00 , H01L21/302 , C03C25/68
CPC分类号： H01L21/67069 , H01L21/02087 , H01L21/31116
摘要： A substrate peripheral film-removing apparatus which is capable of removing a film from a substrate periphery without complicating the construction of the apparatus. A wafer chamber receives a wafer having an SiO2 film formed on a periphery thereof. In a beveled portion-receiving chamber, film-removing chemical processing is carried out on at least part of the beveled portion of the wafer, using a process gas.
摘要翻译：一种能够从基板周边除去膜的基板周边膜去除装置，而不会使装置的结构复杂化。晶片室接收在其周边形成有SiO 2膜的晶片。在斜面部分接收室中，使用处理气体在晶片的至少部分倾斜部分上进行除膜化学处理。

46. 发明申请

US20060196527A1 Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods 审中-公开
标题翻译：表面处理基板的方法，基板的清洗方法以及实施方法的程序
公开(公告)号：US20060196527A1
公开(公告)日：2006-09-07
申请号：US11359378
申请日：2006-02-23
申请人： Eiichi Nishimura , Takehiko Orii
发明人： Eiichi Nishimura , Takehiko Orii
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00 , C23F1/00 , C03C15/00 , B44C1/22
CPC分类号： H01L21/67028 , G03F7/423 , G03F7/425 , H01L21/02049 , H01L21/02063 , H01L21/02068 , H01L21/67161 , H01L21/67167 , H01L21/67184 , H01L21/6719
摘要： A method of surface processing a substrate that enables deposit to be removed from a substrate so as to obtain a clean substrate. A substrate is cleaned with a liquid chemical. A deposit which is formed through the cleaning with liquid chemical is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The deposit that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
摘要翻译：一种表面处理基板的方法，其使得能够从基板移除沉积物以获得清洁的基板。用液体化学品清洗基材。通过用液体化学品清洗形成的沉积物在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。已经暴露于混合气体的气氛的沉积物被加热到预定温度。

47. 发明授权

US06849559B2 Method for removing photoresist and etch residues 有权
标题翻译：去除光刻胶和蚀刻残留物的方法
公开(公告)号：US06849559B2
公开(公告)日：2005-02-01
申请号：US10259381
申请日：2002-09-30
申请人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
发明人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/31 , H01L21/461
CPC分类号： H01L21/76814 , G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻以除去大量的光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

48. 发明授权

US5314603A Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber 失效
标题翻译：能够检测和调节室内电极的实际RF功率的等离子体处理装置
公开(公告)号：US5314603A
公开(公告)日：1994-05-24
申请号：US918045
申请日：1992-07-24
申请人： Kazuhiko Sugiyama , Masafumi Shimizu , Yukio Naito , Eiichi Nishimura , Kouichi Oshima
发明人： Kazuhiko Sugiyama , Masafumi Shimizu , Yukio Naito , Eiichi Nishimura , Kouichi Oshima
IPC分类号： H01J37/32 , C23C14/34 , C23F1/02
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/3299
摘要： A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.
摘要翻译：等离子体处理装置具有处理室和设置在处理室中的彼此相对的一对电极。 RF电源输出要提供给处理室中的一对电极中的至少一个的RF功率。功率检测器检测要施加到处理室中的一个电极的实际RF功率。控制器根据由功率检测器检测到的实际RF功率，将从RF电源输出的RF功率控制到预定值。

49. 发明授权

US5010510A Multiplying unit circuit 失效
标题翻译：乘法单元电路
公开(公告)号：US5010510A
公开(公告)日：1991-04-23
申请号：US579343
申请日：1990-09-07
申请人： Eiichi Nishimura , Takao Nakamura , Hisaki Ishida
发明人： Eiichi Nishimura , Takao Nakamura , Hisaki Ishida
IPC分类号： G06F7/53 , G06F7/508 , G06F7/52 , G06F7/76
CPC分类号： G06F7/5312 , G06F7/762
摘要： A parallel multiplier consists of a systolic array of AND gates and full adders organized in stages so that each stage generates a partial product, adds it to the preceding partial products, and furnishes the sum to the next stage. A control circuit is provided that disables the outputs of each stage of the array until the operation in the particular stage is completed. The disabling of outputs reduces power consumption.
摘要翻译：并行乘法器由AND门的收缩阵列和分阶段组合的全加法器组成，使得每个阶段生成部分乘积，将其添加到先前的部分乘积，并将总和提供给下一阶段。提供了一种控制电路，其禁用阵列的每个级的输出，直到特定级的操作完成。输出禁用可以降低功耗。

50. 发明授权

US4451428A Control rods and method of producing same 失效
标题翻译：控制棒及其制造方法
公开(公告)号：US4451428A
公开(公告)日：1984-05-29
申请号：US222060
申请日：1981-01-02
申请人： Eiichi Nishimura , Shunsuke Uchida , Masao Kitamura , Koichi Saito , Eishi Ibe , Tatsuo Hayashi
发明人： Eiichi Nishimura , Shunsuke Uchida , Masao Kitamura , Koichi Saito , Eishi Ibe , Tatsuo Hayashi
IPC分类号： G21C7/10 , G21C7/113 , G21C7/24
CPC分类号： G21C7/113 , G21Y2002/206 , G21Y2004/10 , G21Y2004/30 , Y02E30/31 , Y02E30/39
摘要： A control rod for a boiling-water reactor having blades arranged in the form of a cross in transverse cross section includes a plurality of poison tubes disposed therein. Boron carbide powder which is a neutron absorbing material causing an (n, .alpha.) reaction to take place is charged in the poison tubes. The control rod has plates of Hf-Zr alloy arranged in the blades in a position nearer to a forward end of the control rod at which the control rod is inserted in a reactor core than the poison tubes. The plates of Hf-Zr alloy are formed of an alloy of Hf having a large neutron absorption cross section and Zr having a small neutron absorption cross section. The concentration of Hf in the plates of Hf-Zr alloy is successively reduced in going from an end thereof adjacent the poison tubes toward and end thereof at the inserting end of the control rod. The plates of Hf-Zr alloy and the poison tubes have the same neutron absorbing capacity at the boundary therebetween at which they are in contact with each other.
摘要翻译：一种沸水反应器的控制棒，其具有以十字横截面形式布置的叶片，其中包括多个设置在其中的毒药管。将引起（n，α）反应的中子吸收材料的碳化硼粉末装入毒药管中。控制杆具有在叶片中布置在更靠近控制棒的前端的位置的Hf-Zr合金板，在该位置控制杆插入反应堆芯中而不是毒药管。 Hf-Zr合金的板由具有大的中子吸收截面的Hf的合金和具有小的中子吸收截面的Zr形成。 Hf-Zr合金板中Hf的浓度从控制棒插入端的毒药管附近的端部朝向其末端逐渐减小。 Hf-Zr合金板和毒药管在它们彼此接触的边界处具有相同的中子吸收能力。

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