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41. 发明申请

US20090220322A1 Vacuum Processing Apparatus And Semiconductor Manufacturing Line Using The Same 审中-公开
标题翻译：真空处理装置及其使用的半导体制造线
公开(公告)号：US20090220322A1
公开(公告)日：2009-09-03
申请号：US12436166
申请日：2009-05-06
申请人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
发明人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
IPC分类号： H01L21/677
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67778 , Y10S134/902 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10S414/14 , Y10T70/5801 , Y10T70/5805
摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.
摘要翻译：真空处理装置由盒式磁带和真空处理块构成。盒式磁带具有用于安装包含样品和大气传送装置的多个盒的盒式台。真空处理块具有用于对样品进行真空处理的多个处理室和用于转移样品的真空转印装置。磁带盒和真空处理块的平面图都是近似矩形的，并且盒体的宽度被设计成大于真空处理块的宽度，真空处理装置的平面图形成为 L形或T形。

42. 发明申请

US20080236614A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080236614A1
公开(公告)日：2008-10-02
申请号：US12039759
申请日：2008-02-29
申请人： Mamoru YAKUSHIJI , Yutaka Ohmoto , Yutaka Kouzuma , Ken Yoshioka
发明人： Mamoru YAKUSHIJI , Yutaka Ohmoto , Yutaka Kouzuma , Ken Yoshioka
IPC分类号： B08B3/00 , C25F3/00 , B44C1/22
CPC分类号： H01L21/3065 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a vacuum chamber, a processing chamber housed in the vacuum chamber, and a sample stage located in the processing chamber, for supporting on its upper surface a disk-like sample to be processed, wherein plural disk-like samples are continuously processed with plasma generated in the processing chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed.
摘要翻译：等离子体处理装置包括真空室，容纳在真空室中的处理室和位于处理室中的样品台，用于在其上表面上支撑待加工的盘状样品，其中多个盘状样品为在处理室中产生的等离子体连续处理，并且其中在连续处理之间的空转时间期间，将样品台的温度调节到比样品被处理的温度高的预定值。

43. 发明申请

US20080138180A1 VACUUM PROCESSING APPARATUS AND SEMICONDUCTOR MANUFACTURING LINE USING THE SAME 审中-公开
标题翻译：真空加工设备和使用其的半导体制造线
公开(公告)号：US20080138180A1
公开(公告)日：2008-06-12
申请号：US12028915
申请日：2008-02-11
申请人： Minoru Soraoka , Ken Yoshioka , Yashinao Kawasaki
发明人： Minoru Soraoka , Ken Yoshioka , Yashinao Kawasaki
IPC分类号： H01L21/02
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67778 , Y10S134/902 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10S414/14 , Y10T70/5801 , Y10T70/5805
摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.
摘要翻译：真空处理装置由盒式磁带和真空处理块构成。盒式磁带具有用于安装包含样品和大气传送装置的多个盒的盒式台。真空处理块具有用于对样品进行真空处理的多个处理室和用于转移样品的真空转印装置。磁带盒和真空处理块的平面图都是近似矩形的，并且盒体的宽度被设计成大于真空处理块的宽度，真空处理装置的平面图形成为 L形或T形。

44. 发明申请

US20080011425A1 Plasma Processing Apparatus And Method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20080011425A1
公开(公告)日：2008-01-17
申请号：US11779396
申请日：2007-07-18
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23F1/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.
摘要翻译：等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。环形构件向上延伸以覆盖钟罩的内表面的一部分。

45. 发明授权

US07288166B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07288166B2
公开(公告)日：2007-10-30
申请号：US10663646
申请日：2003-09-17
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.
摘要翻译：一种用于制造半导体器件的等离子体处理设备包括：用于向待处理衬底施加偏压功率的设备和与衬底相邻的材料;用于调节施加到该材料上的偏置功率的馈电阻抗的设备;以及用于将所述偏置功率的馈送阻抗调整到所述衬底上的多个位置，以使得在所述衬底的表面内使等离子体投射到所述衬底的电子均匀。

46. 再颁专利

USRE39895E1 Semiconductor integrated circuit arrangement fabrication method 有权
标题翻译：半导体集成电路布置制造方法
公开(公告)号：USRE39895E1
公开(公告)日：2007-10-23
申请号：US10094157
申请日：2002-03-08
申请人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
发明人： Takafumi Tokunaga , Sadayuki Okudaira , Tatsumi Mizutani , Kazutami Tago , Hideyuki Kazumi , Ken Yoshioka
IPC分类号： H01L21/00
CPC分类号： H01L21/76802 , H01L21/31116
摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
摘要翻译：为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

47. 发明申请

US20070209933A1 Sample holding electrode and a plasma processing apparatus using the same 审中-公开
标题翻译：样品保持电极和使用其的等离子体处理装置
公开(公告)号：US20070209933A1
公开(公告)日：2007-09-13
申请号：US11513070
申请日：2006-08-31
申请人： Ken Yoshioka , Yutaka Omoto , Tsunehiko Tsubone
发明人： Ken Yoshioka , Yutaka Omoto , Tsunehiko Tsubone
IPC分类号： C23C14/00
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001 , H01L21/6833
摘要： A temperature control type sample-holding electrode using a heater capable of enhancing the performance of controlling the electrode temperature and ensuring the uniformity of static adsorption force over the entire surface, the sample-holding electrode being provided in a processing chamber with a sample being disposed thereon, including a dielectric film having a sample-placing surface and a thin electrode film disposed so as to oppose to the sample-placing surface by way of the dielectric film and comprising a layer of a substantially identical height serving both as a static adsorption electrode and a heater electrode, and provided with power source device capable of simultaneously supplying an AC power for heater and DC power for static adsorption to the thin electrode film.
摘要翻译：一种使用加热器的温度控制型样品保持电极，其能够提高控制电极温度的性能并确保整个表面上的静态吸附力的均匀性，所述样品保持电极设置在处理室中，其中设置有样品在其上，包括具有样品放置表面的电介质膜和通过电介质膜设置成与样品放置表面相对的薄电极膜，并且包括具有基本上相同的高度的层，同时用作静态吸附电极和加热电极，并且设置有能够同时向薄电极膜提供用于加热器的AC电力和静电吸附的DC电力的电源装置。

48. 发明申请

US20050104214A1 Flexible metal stacked body 审中-公开
标题翻译：柔性金属堆叠体
公开(公告)号：US20050104214A1
公开(公告)日：2005-05-19
申请号：US10987134
申请日：2004-11-12
申请人： Akihiro Maeda , Ichirou Koyano , Yuusuke Suzuki , Ken Yoshioka
发明人： Akihiro Maeda , Ichirou Koyano , Yuusuke Suzuki , Ken Yoshioka
IPC分类号： B32B15/08 , H01L23/14 , H01L23/498 , H05K1/00 , H05K1/03 , H01L23/48
CPC分类号： H01L23/145 , H01L23/4985 , H01L2924/0002 , H05K1/036 , H05K1/0393 , H05K2201/0129 , H01L2924/00
摘要： A flexible metal stacked body includes: a metal layer; and a resin stacked body formed on the metal layer, in which the resin stacked body includes at least one thermosetting resin layer and at least one thermoplastic resin layer, one of the at least one thermosetting resin layer is provided adjacent to the metal layer, and the at least one thermosetting resin layer and the at least one thermoplastic resin layer are stacked alternately.
摘要翻译：柔性金属层叠体包括：金属层; 以及形成在所述金属层上的树脂层叠体，其中所述树脂层叠体包括至少一个热固性树脂层和至少一个热塑性树脂层，所述至少一个热固性树脂层中的一个邻近所述金属层设置;以及所述至少一个热固性树脂层和所述至少一个热塑性树脂层交替堆叠。

49. 发明申请

US20050028934A1 Apparatus and method for plasma etching 审中-公开
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20050028934A1
公开(公告)日：2005-02-10
申请号：US10793886
申请日：2004-03-08
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.
摘要翻译：提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。

50. 发明授权

US06835665B2 Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method 失效
标题翻译：蚀刻材料的蚀刻方法和使用该方法的半导体制造方法和装置
公开(公告)号：US06835665B2
公开(公告)日：2004-12-28
申请号：US10090761
申请日：2002-03-06
申请人： Nobuyuki Mise , Ken Yoshioka , Ryoji Nishio , Tatehito Usui
发明人： Nobuyuki Mise , Ken Yoshioka , Ryoji Nishio , Tatehito Usui
IPC分类号： H01L21302
CPC分类号： H01L21/31144 , C23F4/00 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L21/32139 , H01L28/65 , H01L43/12
摘要： A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.
摘要翻译：使用形成在难蚀刻材料和等离子体的膜上的掩模蚀刻在基板上形成的几乎蚀刻的材料的膜，其中使用形成有角度为90°的侧壁的掩模蚀刻难蚀刻材料的膜度以下，由此形成与基板的表面成锥角的蚀刻膜等于或大于掩模的锥角。

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