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41. 发明授权

US07018932B2 Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07018932B2
公开(公告)日：2006-03-28
申请号：US10377597
申请日：2003-03-04
申请人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
发明人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70675 , H01J2237/30438
摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像，至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

42. 发明授权

US07009148B2 Method of processing a substrate, heating apparatus, and method of forming a pattern 失效
标题翻译：处理基板的方法，加热装置以及形成图案的方法
公开(公告)号：US07009148B2
公开(公告)日：2006-03-07
申请号：US10682419
申请日：2003-10-10
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
IPC分类号： F27B5/14
CPC分类号： H01L21/67115 , G03F7/0042 , G03F7/0392 , G03F7/38 , H01L21/0273 , H01L21/67109
摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
摘要翻译：一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流。

43. 发明申请

US20050250056A1 Substrate treatment method, substrate treatment apparatus, and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20050250056A1
公开(公告)日：2005-11-10
申请号：US11114043
申请日：2005-04-26
申请人： Kenji Kawano , Shinichi Ito
发明人： Kenji Kawano , Shinichi Ito
IPC分类号： G03F7/38 , H01L21/027 , H01L21/312
CPC分类号： G03F7/38 , H01L21/312
摘要： According to an aspect of the present invention, there is provided a substrate treatment method comprising forming a chemically amplified resist film on a substrate to be treated, and supplying heat to the chemically amplified resist film to perform a heat treatment, wherein the heat treatment includes creating a first temperature state satisfying TT TB in which TT is a temperature at a surface portion of the chemically amplified resist film, and TB is a temperature at an interface portion of the chemically amplified resist film with the substrate to be treated.
摘要翻译：根据本发明的一个方面，提供了一种基板处理方法，包括在待处理的基板上形成化学放大的抗蚀剂膜，并向化学放大的抗蚀剂膜供热以进行热处理，其中热处理包括产生一个满足T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T B SUB>其中T T T是化学放大抗蚀剂膜的表面部分处的温度，T B B是化学放大抗蚀剂膜的界面部分处的温度与待处理的基底。

44. 发明授权

US06960540B2 Film formation method, semiconductor element and method thereof, and method of manufacturing a disk-shaped storage medium 失效
标题翻译：成膜方法，半导体元件及其制造方法以及盘状存储介质的制造方法
公开(公告)号：US06960540B2
公开(公告)日：2005-11-01
申请号：US09842403
申请日：2001-04-26
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： B05D1/00 , G03F7/16 , G11B5/842 , G11B7/26 , H01L21/027 , H01L21/312 , H01L21/316 , H01L21/30
CPC分类号： B05D1/005 , G03F7/16 , G03F7/162 , G11B7/26
摘要： Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.
摘要翻译：相对运动发生在处理衬底和下落部分之间。当基板旋转时，下降部分从基板的大致中心向其外周相对移动。当落下部分相对地从处理衬底的大致中心向外周移动时，基板的旋转频率w降低，使得溶液膜由于施加到滴下的溶液膜上的离心力而不应该移动。同时，来自滴下部分的液体的进料速率v增加，以在工艺衬底上形成溶液膜。

45. 发明申请

US20050069815A1 Processing method and semiconductor manufacturing method 审中-公开
标题翻译：加工方法和半导体制造方法
公开(公告)号：US20050069815A1
公开(公告)日：2005-03-31
申请号：US10916414
申请日：2004-08-12
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Masami Watase
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Masami Watase
IPC分类号： B23K26/18 , B23K26/00 , B23K26/02 , B23K101/40 , G03F7/00 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3205 , H01L21/3213 , H01L23/544
CPC分类号： H01L23/544 , H01L21/0275 , H01L21/0276 , H01L21/31144 , H01L21/32139 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.
摘要翻译：一种处理方法包括在选择性地在处理区域上在基板上照射处理光的处理区域上的第一膜上形成水溶性保护膜，以选择性地去除处理区域中的第一膜和处理区域上的保护膜，并在选择性照射后用水除去保护膜。

46. 发明申请

US20050022732A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20050022732A1
公开(公告)日：2005-02-03
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L21/027 , H01L21/00 , H01L21/20 , H01L21/288 , H01L21/316 , B05C5/00 , B05B7/00 , B05B13/02 , B05C15/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

47. 发明授权

US06842281B2 Observation device, ultraviolet microscope and observation method 有权
标题翻译：观察装置，紫外线显微镜及观察方法
公开(公告)号：US06842281B2
公开(公告)日：2005-01-11
申请号：US10133626
申请日：2002-04-29
申请人： Atsushi Tsurumune , Jiro Mizuno , Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema
发明人： Atsushi Tsurumune , Jiro Mizuno , Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema
IPC分类号： G02B21/00 , G02B21/16 , G02B21/26 , G02B21/36 , G02B11/04
CPC分类号： G02B21/16
摘要： An ultraviolet microscope comprises an observation device which observes a specimen with ultraviolet light; a gas supply device which, during the observation with ultraviolet light, supplies an inert gas to surroundings of the specimen; and a timing control device which controls supply timing of the inert gas by the gas supply device, and the timing control device controls the gas supply device so as to cause preliminary supply of the inert gas before the observation of the specimen with ultraviolet light, and also so as to cause regular supply of the inert gas at least during the observation of the specimen with ultraviolet light.
摘要翻译：紫外线显微镜包括用紫外线观察样品的观察装置; 在紫外线观察期间，向样本周围供给惰性气体的气体供给装置; 以及定时控制装置，其通过气体供给装置控制惰性气体的供给定时，并且定时控制装置控制气体供给装置，以便在用紫外线观察样品之前使惰性气体预先供应，以及也可以至少在用紫外线观察试样时使惰性气体定期供给。

48. 发明授权

US06818387B2 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06818387B2
公开(公告)日：2004-11-16
申请号：US10075619
申请日：2002-02-15
申请人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F726
CPC分类号： G03F7/322 , G03F7/38
摘要： There is disclosed, as an aspect, a method of forming a pattern which comprising coating a photosensitive resist film on a surface of substrate, subjecting the photosensitive resist film to an exposure process, coating an oxidizing liquid having an oxidative effect on a surface of the photosensitive resist film that has been subjected to the exposure process to thereby perform a pretreatment wherein the surface of the resist film is caused to oxidize by the oxidizing liquid to form an oxide layer thereon, feeding a developing solution to the photosensitive resist film whose surface has been oxidized to thereby perform a development of the resist film, and feeding a rinsing solution to a surface of the substrate to wash the substrate.
摘要翻译：作为一个方面，公开了一种形成图案的方法，该方法包括在基材表面上涂布光敏抗蚀剂膜，对感光性抗蚀剂膜进行曝光处理，在其表面上涂布具有氧化作用的氧化液体已经进行了曝光处理的光敏抗蚀剂膜，由此进行预处理，其中使抗氧化膜的表面被氧化液体氧化以在其上形成氧化物层，将显影液供给到表面具有的光敏抗蚀剂膜被氧化，从而进行抗蚀剂膜的显影，并将漂洗溶液供给到基板的表面以洗涤基板。

49. 发明授权

US06800569B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US06800569B2
公开(公告)日：2004-10-05
申请号：US10352954
申请日：2003-01-29
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

50. 发明授权

US06475285B2 Deposition apparatus 失效
标题翻译：沉积装置
公开(公告)号：US06475285B2
公开(公告)日：2002-11-05
申请号：US09817196
申请日：2001-03-27
申请人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
发明人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
IPC分类号： C23C1600
CPC分类号： B05C5/005
摘要： A deposition apparatus includes a chemical discharging nozzle for continuously discharging chemicals to a substrate to be processed, a gas spraying section arranged below the chemical discharging nozzle, for spraying gas on the chemicals discharged from the chemical discharging nozzle and changing an orbit of the chemicals by pressure of the gas, a chemical collecting section for collecting the chemicals the orbit of which is changed by the gas spraying section, the chemical collecting section being arranged so as to interpose the chemicals between the gas spraying section and the chemical collecting section, and a moving section for moving the chemical discharging nozzle and the substrate relatively with each other. The gas spraying section includes a laser oscillator for emitting a laser beam, and a gas generating film that generates the gas when heated and gasified by the laser beam emitted from the laser oscillator.
摘要翻译：沉积设备包括用于将化学品连续地排放到待处理基板的化学物质排放喷嘴，设置在化学物质排放喷嘴下方的气体喷射部分，用于将化学物质排出喷嘴上排出的化学物质喷射并改变化学品的轨道气体的压力，用于收集由气体喷射部分改变其轨道的化学物质的化学收集部分，化学收集部分布置成将气体喷射部分和化学收集部分之间的化学物质介入，使所述化学物质排出喷嘴和所述基板彼此相对移动的移动部。气体喷射部分包括用于发射激光束的激光振荡器，以及当由激光振荡器发射的激光束被加热和气化时产生气体的气体发生膜。

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