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1. 发明授权

US06475285B2 Deposition apparatus 失效
标题翻译：沉积装置
公开(公告)号：US06475285B2
公开(公告)日：2002-11-05
申请号：US09817196
申请日：2001-03-27
申请人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
发明人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
IPC分类号： C23C1600
CPC分类号： B05C5/005
摘要： A deposition apparatus includes a chemical discharging nozzle for continuously discharging chemicals to a substrate to be processed, a gas spraying section arranged below the chemical discharging nozzle, for spraying gas on the chemicals discharged from the chemical discharging nozzle and changing an orbit of the chemicals by pressure of the gas, a chemical collecting section for collecting the chemicals the orbit of which is changed by the gas spraying section, the chemical collecting section being arranged so as to interpose the chemicals between the gas spraying section and the chemical collecting section, and a moving section for moving the chemical discharging nozzle and the substrate relatively with each other. The gas spraying section includes a laser oscillator for emitting a laser beam, and a gas generating film that generates the gas when heated and gasified by the laser beam emitted from the laser oscillator.
摘要翻译：沉积设备包括用于将化学品连续地排放到待处理基板的化学物质排放喷嘴，设置在化学物质排放喷嘴下方的气体喷射部分，用于将化学物质排出喷嘴上排出的化学物质喷射并改变化学品的轨道气体的压力，用于收集由气体喷射部分改变其轨道的化学物质的化学收集部分，化学收集部分布置成将气体喷射部分和化学收集部分之间的化学物质介入，使所述化学物质排出喷嘴和所述基板彼此相对移动的移动部。气体喷射部分包括用于发射激光束的激光振荡器，以及当由激光振荡器发射的激光束被加热和气化时产生气体的气体发生膜。

2. 发明授权

US06730447B2 Manufacturing system in electronic devices 失效
标题翻译：电子设备制造系统
公开(公告)号：US06730447B2
公开(公告)日：2004-05-04
申请号：US10092486
申请日：2002-03-08
申请人： Shinichi Ito , Tatsuhiko Higashiki , Hiroshi Ikegami , Nobuo Hayasaka
发明人： Shinichi Ito , Tatsuhiko Higashiki , Hiroshi Ikegami , Nobuo Hayasaka
IPC分类号： G03C500
CPC分类号： G03F7/70633 , B23K26/04 , B23K26/042 , B23K2101/40 , G03F9/7076 , Y10S430/146 , Y10T29/413
摘要： A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.
摘要翻译：激光加工装置包括：激光振荡器，用于产生激光束以选择性地去除待处理的基板的一部分，用于将激光束施加到基板的任意位置的扫描系统和用于将激光束施加到基板的入射装置基本上是直角。

3. 发明授权

US08071157B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US08071157B2
公开(公告)日：2011-12-06
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm））相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

4. 发明授权

US07018932B2 Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07018932B2
公开(公告)日：2006-03-28
申请号：US10377597
申请日：2003-03-04
申请人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
发明人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70675 , H01J2237/30438
摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像，至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

5. 发明授权

US06960540B2 Film formation method, semiconductor element and method thereof, and method of manufacturing a disk-shaped storage medium 失效
标题翻译：成膜方法，半导体元件及其制造方法以及盘状存储介质的制造方法
公开(公告)号：US06960540B2
公开(公告)日：2005-11-01
申请号：US09842403
申请日：2001-04-26
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： B05D1/00 , G03F7/16 , G11B5/842 , G11B7/26 , H01L21/027 , H01L21/312 , H01L21/316 , H01L21/30
CPC分类号： B05D1/005 , G03F7/16 , G03F7/162 , G11B7/26
摘要： Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.
摘要翻译：相对运动发生在处理衬底和下落部分之间。当基板旋转时，下降部分从基板的大致中心向其外周相对移动。当落下部分相对地从处理衬底的大致中心向外周移动时，基板的旋转频率w降低，使得溶液膜由于施加到滴下的溶液膜上的离心力而不应该移动。同时，来自滴下部分的液体的进料速率v增加，以在工艺衬底上形成溶液膜。

6. 发明申请

US20050022732A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20050022732A1
公开(公告)日：2005-02-03
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L21/027 , H01L21/00 , H01L21/20 , H01L21/288 , H01L21/316 , B05C5/00 , B05B7/00 , B05B13/02 , B05C15/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

7. 发明授权

US06800569B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US06800569B2
公开(公告)日：2004-10-05
申请号：US10352954
申请日：2003-01-29
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

8. 发明授权

US06372285B1 Method of forming liquid film 有权
公开(公告)号：US06372285B1
公开(公告)日：2002-04-16
申请号：US09818610
申请日：2001-03-28
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： B05D512
摘要： A liquid output portion is arranged above and moves relative to a semiconductor substrate with determined film formation and non-film-formation regions. The liquid output portion continuously outputs a liquid in a constant amount to the substrate. Below the liquid output portion is a liquid shut-out-portion. A liquid controlled to spread in a constant amount is continuously output from the liquid output nozzle to the substrate. While the nozzle and the substrate relatively move, the liquid is supplied to a first region, and the liquid is supplied to a second region in such a way that the liquid supplied and spread in the second region is in contact with the liquid supplied and spread in the first region. Where projections and depressions are formed on the surface of the substrate, an amount of the liquid supplied varies depending upon the ratio between the projections and depressions.

9. 发明授权

US5679484A Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
公开(公告)号：US5679484A
公开(公告)日：1997-10-21
申请号：US757957
申请日：1996-11-25
申请人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
发明人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask. The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant. Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

10. 发明授权

US07604832B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US07604832B2
公开(公告)日：2009-10-20
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D1/02 , B05D3/12
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口和基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qgamma（mm）的范围内相对于溶液的表面张力γ（N / m），通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10 -5（m·sec / N）。

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