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41. 发明授权

US06171754B2 Chemically amplified resist compositions 失效
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06171754B2
公开(公告)日：2001-01-09
申请号：US09124597
申请日：1998-07-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： B03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

42. 发明授权

US6080524A Photosensitive polymer having cyclic backbone and resist composition comprising the same 失效
标题翻译：具有环状骨架的光敏聚合物和包含其的抗蚀剂组合物
公开(公告)号：US6080524A
公开(公告)日：2000-06-27
申请号：US251158
申请日：1999-02-17
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： H01L21/027 , C08F120/30 , C08F220/30 , C08F236/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition including a photoacid generator and a photosensitive polymer for use in a chemically amplified photoresist that is represented by the following chemical formula (CF1): ##STR1## wherein R.sub.1 is a C.sub.1 to C.sub.20 aliphatic hydrocarbon; R.sub.2 is selected from the group including t-butyl, tetrahydropyranyl and 1-alkoxyethyl groups; l, m, and n are integers, and wherein l/(l+m+n)=0.1-0.5, m/(l+m+n)=0.1-0.7, and n/(l+m+n)=0.0-0.4. The photosensitive polymer has a cyclic backbone containing an alicyclic compound, which has high resistance to dry etching, and is used with excimer lasers to create a fine pattern line.
摘要翻译：一种光致抗蚀剂组合物，其包含用于由以下化学式（CF1）表示的化学放大光致抗蚀剂中的光致酸产生剂和感光性聚合物：其中R1为C1〜C20脂肪族烃; R2选自叔丁基，四氢吡喃基和1-烷氧基乙基; l，m和n是整数，其中l /（1 + m + n）= 0.1-0.5，m /（1 + m + n）= 0.1-0.7，n /（1 + m + n）= 0.0-0.4。感光性聚合物具有含有脂环族化合物的环状主链，其具有高耐干蚀刻性，并且与准分子激光器一起使用以形成精细图案线。

43. 发明授权

US5998557A Chemically amplified resists 有权
标题翻译：化学扩增抗蚀剂
公开(公告)号：US5998557A
公开(公告)日：1999-12-07
申请号：US265150
申请日：1999-03-09
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03F7/004 , C08F30/08 , C08L43/04 , G03F7/039 , G03F7/075 , G03C1/72
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.
摘要翻译：通常，本发明提供了可用于化学增强抗蚀剂中的聚合物。更具体地说，本发明涉及含有该基团的酯化聚合物：抗蚀剂组合物包含酯化聚合物和光酸产生剂。

44. 发明授权

US08247788B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08247788B2
公开(公告)日：2012-08-21
申请号：US12659175
申请日：2010-02-26
申请人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
发明人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
IPC分类号： H01L45/00
CPC分类号： H01L27/2445 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147
摘要： The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor.
摘要翻译：非易失性存储器件包括至少一对第一电极线，设置在至少一对第一电极线之间的至少一个器件结构和设置在该至少一个器件结构与至少一对第一电极线之间的电介质层电极线。所述至少一个器件结构包括第二电极线，所述第二电极线包括第一导电类型半导体，与所述第二电极线相邻的电阻改变材料层，与所述电阻变化材料层相邻的通道，并且包括不同于所述第一导电类型的第一导电型半导体导电型半导体和与沟道相邻的第三电极线，并且包括第一导电型半导体。

45. 发明授权

US07709277B2 PAA-based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法以及所得结构
公开(公告)号：US07709277B2
公开(公告)日：2010-05-04
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

46. 发明申请

US20070296931A1 Focusing/zooming apparatus for optical projection device and projection optical system 审中-公开
标题翻译：用于光学投影装置和投影光学系统的聚焦/变焦装置
公开(公告)号：US20070296931A1
公开(公告)日：2007-12-27
申请号：US11783451
申请日：2007-04-10
申请人： Sang-jun Choi , Jeong-ho Nho
发明人： Sang-jun Choi , Jeong-ho Nho
IPC分类号： G03B21/14
CPC分类号： G03B21/142 , G02B7/04 , G03B3/02
摘要： Provided are a focusing apparatus of an optical projection device having a simple structure and capable of a precisely in focusing and a projection optical system. The focusing apparatus includes: a frame including a female screw part having a first pitch; a body tube moveably installed in the frame and comprising a male screw part having a second pitch smaller than the first pitch; and an adjusting ring including a male screw part corresponding to the female screw part having the first pitch and a female screw part corresponding to the male screw part having the second pitch to support the body tube in the frame and move the body tube toward an optical axis direction.
摘要翻译：提供一种具有简单结构并能够精确地聚焦的投影光学系统的投影装置的聚焦装置。聚焦装置包括：框架，包括具有第一间距的阴螺纹部分; 身体管可移动地安装在框架中并且包括具有小于第一间距的第二间距的阳螺纹部分; 以及调节环，包括对应于具有第一节距的内螺纹部分的阳螺纹部分和与具有第二节距的阳螺纹部分对应的阴螺纹部分，以将体管支撑在框架中，并将体管朝向光学轴方向。

47. 发明授权

US07241552B2 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07241552B2
公开(公告)日：2007-07-10
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

48. 发明申请

US20070111532A1 PAA-based etchant, methods of using same, and resultant structures 有权
公开(公告)号：US20070111532A1
公开(公告)日：2007-05-17
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

49. 发明申请

US20050150461A1 Apparatus of depositing thin film with high uniformity 失效
标题翻译：沉积高均匀度薄膜的设备
公开(公告)号：US20050150461A1
公开(公告)日：2005-07-14
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.
摘要翻译：在真空室中在晶片上沉积沉积材料的沉积设备包括安装在真空室中以蒸发沉积材料的沉积舟，加载晶片的晶片引导件，晶片引导件具有与晶片转动装置，当晶片导向件接近时旋转旋转构件的晶片旋转装置以及在真空室的入口，沉积舟和晶片旋转装置之间使晶片导向件往复运动的晶片传送装置。

50. 发明申请

US20050008975A1 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US20050008975A1
公开(公告)日：2005-01-13
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： C08F220/18 , C08F222/06 , C08F232/04 , C08F234/02 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

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