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41. 发明授权

US07683440B2 Semiconductor memory device 有权
公开(公告)号：US07683440B2
公开(公告)日：2010-03-23
申请号：US11656437
申请日：2007-01-23
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/10 , H01L29/739
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

42. 发明申请

US20090278420A1 MEMS-BASED NANOPOSITIONERS AND NANOMANIPULATORS 审中-公开
标题翻译：基于MEMS的纳米增塑剂和纳米颗粒
公开(公告)号：US20090278420A1
公开(公告)日：2009-11-12
申请号：US12305478
申请日：2007-06-21
申请人： Yu Sun , Xinyu Liu
发明人： Yu Sun , Xinyu Liu
IPC分类号： H02N1/00
CPC分类号： B25J7/00 , B25J9/0015
摘要： A MEMS-based mano manipulator or nanopositioner is provided that can achieve both sub-nanometer resolution and millimeter force output. The nanomanipulator or nanopositioner comprises a linear amplification mechanism that minifies input displacements and amplifies input forces, microactuators that drive the amplification mechanism to generate forward and backward motion, and position sensors that measure the input displacement of the amplification mechanism. The position sensors obtain position feedback enabling precise closed-loop control during nanomanipulation.
摘要翻译：提供了基于MEMS的马诺机器人或纳米定位器，其可以实现亚纳米分辨率和毫米波力输出。纳米机械手或纳米定位器包括线性放大机构，其缩小输入位移并放大输入力，驱动放大机构以产生向前和向后运动的微致动器以及测量放大机构的输入位移的位置传感器。位置传感器获得位置反馈，可在纳米操作期间实现精确的闭环控制。

43. 发明授权

US07545593B1 Magnetic storage systems and methods with tighter write fault window to improve reliability 失效
标题翻译：磁存储系统和方法具有更严格的写入故障窗口，以提高可靠性
公开(公告)号：US07545593B1
公开(公告)日：2009-06-09
申请号：US11075285
申请日：2005-03-08
申请人： Yu Sun , Bill Flynn , Don Brunnett
发明人： Yu Sun , Bill Flynn , Don Brunnett
IPC分类号： G11B27/36 , G11B15/04 , G11B19/04 , G11B5/596
CPC分类号： G11B19/045 , G11B5/596 , G11B5/59627
摘要： A magnetic storage system includes a disk, a head, an actuator, and a servo controller. The servo controller monitors a value, such as a position error signal (PES) sample value, a predicted PES sample value, and the like, that is based on servo information provided by the head. The servo controller provides a signal to inhibit writing by the head based on a comparison of the monitored value with a threshold, such as a write fault window (WFW), a PES plus Velocity (PPV) threshold, and the like. The servo controller sets the threshold to a first value based on at least one of an on-track track misregistration (TMR) value and a seek settle TMR value. When the servo controller determines that the head is subject to a vibration condition, the servo controller sets the threshold to a second value that is different from the first value.
摘要翻译：磁存储系统包括盘，头，致动器和伺服控制器。伺服控制器基于由头提供的伺服信息来监视诸如位置误差信号（PES）采样值，预测的PES采样值等的值。伺服控制器基于监视值与诸如写入故障窗口（WFW），PES加速度（PPV）阈值等的阈值的比较来提供用于禁止头部写入的信号。伺服控制器基于轨道磁道重合失调（TMR）值和寻道稳定TMR值中的至少一个将阈值设置为第一值。当伺服控制器确定头受到振动条件时，伺服控制器将阈值设置为不同于第一值的第二值。

44. 发明授权

US07489469B2 Embedded runout correction based on written-in runout measurement 有权
标题翻译：基于写入跳动测量的嵌入式跳动校正
公开(公告)号：US07489469B2
公开(公告)日：2009-02-10
申请号：US11724436
申请日：2007-03-15
申请人： Yu Sun , Don Brunnett , Lloyd Levy , Thomas O. Melrose
发明人： Yu Sun , Don Brunnett , Lloyd Levy , Thomas O. Melrose
IPC分类号： G11B5/596
CPC分类号： G11B5/59627 , G11B5/59633
摘要： Performing embedded runout correction for a track on a rotational data storage disk includes measuring written-in runout for the track, selecting a number of revolutions in response to the measured written-in runout of the track, calculating embedded correction values for the track for the selected number of revolutions of the rotational data storage disk, and storing the embedded correction values.
摘要翻译：对旋转数据存储盘上的轨道执行嵌入式跳动校正包括测量轨道的写入跳动，响应于轨迹的测量写入跳动选择转数，计算轨道的嵌入校正值选择旋转数据存储盘的转数，并存储嵌入的校正值。

45. 发明授权

US07482226B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07482226B2
公开(公告)日：2009-01-27
申请号：US11656438
申请日：2007-01-23
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/823425 , H01L21/823468 , H01L27/115 , H01L27/11568 , Y10S257/90
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).
摘要翻译：漏极（7）包括与控制栅极（5）对准的轻掺杂浅杂质区域（7a）和与侧壁膜（8）对准并在其上掺杂有杂质的重掺杂深杂质区域（7b）浓度高于轻掺杂浅杂质区（7a）的浓度。轻掺杂的浅杂质区（7a）导致短沟道效应和编程效率的改善。漏极接触孔形成部分（70）设置到重掺杂杂质区域（7b）以降低漏极（7）处的接触电阻。

46. 发明申请

US20080266713A1 Suspension, head gimbal assembly and manufacturing method thereof, and disk drive unit with the same 有权
标题翻译：悬架，头万向架组装及其制造方法以及具有该悬架的磁头驱动单元
公开(公告)号：US20080266713A1
公开(公告)日：2008-10-30
申请号：US11790564
申请日：2007-04-26
申请人： MingGao Yao , YiRu Xie , Yu Sun , Lin Guo
发明人： MingGao Yao , YiRu Xie , Yu Sun , Lin Guo
IPC分类号： G11B5/60
CPC分类号： G11B5/4853
摘要： A suspension for a HGA includes a suspension flexure and an out trigger. The suspension flexure has a tongue region having a first flexure part in a tip portion thereof for mounting a trailing edge of a slider and a PZT mounting region for mounting PZT elements. One end of the out trigger is connected to the suspension flexure, and the other end of the out trigger has a trigger support portion which extends above the tongue region so as to support the leading edge of the slider. The structure of the out trigger is capable of stiffening the tongue region of the suspension flexure and, in turns, avoiding the deformation problem and the dimple separation problem during the manufacturing process or in vibration or shock events. The invention also discloses a HGA with the suspension, manufacturing methods of the HGA and a disk drive unit having such HGA.
摘要翻译：用于HGA的悬架包括悬架弯曲和外触发。悬架挠曲件具有舌部区域，其顶端部具有用于安装滑动件的后缘的第一挠曲部分和用于安装PZT元件的PZT安装区域。输出触发器的一端连接到悬架弯曲部，而触发器的另一端具有在舌部上方延伸的触发器支撑部分，以便支撑滑块的前缘。出口触发器的结构能够加强悬架挠曲的舌部区域，并且反过来避免在制造过程中或振动或冲击事件期间的变形问题和凹坑分离问题。本发明还公开了一种HGA，具有HGA的悬挂，制造方法和具有这种HGA的盘驱动单元。

47. 发明授权

US07303964B2 Self-aligned STI SONOS 有权
标题翻译：自对准STI SONOS
公开(公告)号：US07303964B2
公开(公告)日：2007-12-04
申请号：US11113509
申请日：2005-04-25
申请人： Hidehiko Shiraiwa , Mark Randolph , Yu Sun
发明人： Hidehiko Shiraiwa , Mark Randolph , Yu Sun
IPC分类号： H01L21/336
CPC分类号： H01L21/76229 , H01L27/105 , H01L27/115 , H01L27/11568 , H01L27/11573
摘要： Methods 300 and 350 are disclosed for fabricating shallow isolation trenches and structures in multi-bit SONOS flash memory devices. One method aspect 300 comprises forming 310 a multi-layer dielectric-charge trapping-dielectric stack 420 over a substrate 408 of the wafer 402, for example, an ONO stack 420, removing 312 the multi-layer dielectric-charge trapping-dielectric stack 420 in a periphery region 406 of the wafer 402, thereby defining a multi-layer dielectric-charge trapping-dielectric stack 420 in a core region 404 of the wafer 402. The method 300 further comprises forming 314 a gate dielectric layer 426 over the periphery region 406 of the substrate 408, forming 316 a first polysilicon layer 428 over the multi-layer dielectric-charge trapping-dielectric stack 420 in the core region 402 and the gate dielectric 426 in the periphery region 406 , then concurrently forming 318 an isolation trench 438 in the substrate 408 in the core region 404 and in the periphery region 406. Thereafter, the isolation trenches are filled 326 with a dielectric material 446, and a second polysilicon layer 452 that is formed 332 over the first polysilicon layer 428 and the filled trenches 438, forming an self-aligned STI structure 446. The method 300 avoids ONO residual stringers at STI edges in the periphery region, reduces active region losses, reduces thinning of the periphery gate oxide and the ONO at the STI edge, and reduces dopant diffusion during isolation implantations due to reduced thermal process steps.
摘要翻译：公开了用于在多位SONOS闪存器件中制造浅隔离沟槽和结构的方法300和350。一个方法方面300包括在晶片402的衬底408（例如，ONO堆叠420）上形成310多层介电电荷俘获 - 电介质堆叠420，去除312多层介电电荷俘获 - 电介质堆叠420 在晶片402的外围区域406中，由此在晶片402的芯区域404中限定多层介电电荷捕获 - 电介质叠层420。方法300还包括在衬底408的外围区域406上形成314栅极电介质层426，在芯区域402中的多层介电电荷捕获 - 电介质堆叠层420上形成316第一多晶硅层428，并且栅极在外围区域406中的电介质426，然后同时在芯区域404和周边区域406中的衬底408中形成318隔离沟槽438。此后，绝缘沟槽用介电材料446填充326，第二多晶硅层452在第一多晶硅层428和填充沟槽438上形成332，形成自对准STI结构446。方法300避免在外围区域的STI边缘处的ONO残余桁条，减少有源区域损耗，减少STI边缘处的外围栅极氧化物和ONO的稀化，并且由于减少的热处理步骤，在隔离注入期间减少掺杂剂扩散。

48. 发明授权

US07286317B1 Disk drive that compensates for repeatable runout of a disk based on measured timing between servo information and methods thereof 有权
标题翻译：基于伺服信息及其方法之间的测量定时来补偿盘的可重复跳动的磁盘驱动器
公开(公告)号：US07286317B1
公开(公告)日：2007-10-23
申请号：US11112391
申请日：2005-04-22
申请人： Yunfeng Li , Yu Sun
发明人： Yunfeng Li , Yu Sun
IPC分类号： G11B5/596
CPC分类号： G11B5/59627
摘要： A disk drive includes a rotatable data storage disk, a transducer, an actuator, and a controller. The disk includes information and data tracks that are defined thereon. The transducer is configured to read the information from the disk. The actuator is configured to position the transducer relative to the data tracks. The controller is configured to measure timing between particular information on the disk, to estimate repeatable runout of the disk based on the measured timing, and to compensate for repeatable runout of the disk responsive to the estimated repeatable runout while positioning the transducer relative to a selected track.
摘要翻译：磁盘驱动器包括可旋转数据存储盘，换能器，致动器和控制器。磁盘包括在其上定义的信息和数据轨道。传感器被配置为从盘读取信息。致动器被配置成相对于数据轨道定位换能器。控制器被配置为测量盘上的特定信息之间的定时，以基于测量的定时估计盘的可重复跳动，并且响应于估计的可重复跳动来补偿盘的可重复跳动，同时相对于所选择的定位跟踪。

49. 发明申请

US20070205454A1 Dual storage node memory 有权
标题翻译：双存储节点存储器
公开(公告)号：US20070205454A1
公开(公告)日：2007-09-06
申请号：US11702845
申请日：2007-02-05
申请人： Fred Cheung , Hiroyuki Kinoshita , Chungho Lee , Yu Sun , Chi Chang
发明人： Fred Cheung , Hiroyuki Kinoshita , Chungho Lee , Yu Sun , Chi Chang
IPC分类号： G11C16/04
CPC分类号： H01L29/66833 , G11C16/0475 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521
摘要： An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.
摘要翻译：本发明的实施例涉及存储单元。存储单元包括第一电荷存储元件和第二电荷存储元件，其中第一和第二电荷存储元件包括氮化物。存储单元还包括形成在第一和第二电荷存储元件之间的绝缘层。绝缘层提供第一和第二电荷存储元件之间的绝缘。

50. 发明申请

US20070004988A1 Circuit for measuring breath waveform with impedance method and method and device for resisting interference of electrical fast transient 有权
标题翻译：用阻抗法测量呼吸波形的电路和抵抗电快速瞬变干扰的方法和装置
公开(公告)号：US20070004988A1
公开(公告)日：2007-01-04
申请号：US11316454
申请日：2005-12-21
申请人： Xiaoyu Wu , Yu Sun , Jian Cen
发明人： Xiaoyu Wu , Yu Sun , Jian Cen
IPC分类号： A61B5/08 , A61B5/02 , A61B5/05
CPC分类号： A61B5/0809
摘要： A circuit for measuring respiratory waveform with impedance method and a method and device for resisting electrical fast transient interference are provided, and wherein an output from the peak detector circuit and a reference signal are input to two input terminals of the comparator circuit, an output terminal of the comparator circuit is connected to a control terminal of the electronic switch, and one terminal of the electronic switch is connected to an output terminal of the signal amplifier circuit and the other to an input terminal of the demodulator/amplifier circuit. If a level of the output signal of the peak detector circuit is greater than the level of the reference signal, the electronic switch is switched off in response to an inversion of the output of the comparator circuit so that the interference is isolated from the next stage circuit. The present invention is prone to be implemented with significant effect.
摘要翻译：提供一种用阻抗法测量呼吸波形的电路以及用于抵抗电快速瞬变干扰的方法和装置，其中来自峰值检测器电路的输出和参考信号被输入到比较器电路的两个输入端，输出端比较电路连接到电子开关的控制端子，电子开关的一个端子连接到信号放大器电路的输出端，另一端连接到解调器/放大器电路的输入端。如果峰值检测器电路的输出信号的电平大于参考信号的电平，则电子开关响应于比较器电路的输出的反相而被关断，使得干扰与下一级隔离电路。本发明容易实施，效果显着。

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