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    • 43. 发明授权
    • Large-area FED apparatus and method for making same
    • US06495956B2
    • 2002-12-17
    • US09867912
    • 2001-05-30
    • David A. CatheyJimmy J. Browning
    • David A. CatheyJimmy J. Browning
    • H01J1942
    • H01J31/123H01J9/025H01J9/185H01J9/242H01J29/028H01J29/864H01J31/127H01J2329/863
    • A large-area field emission device (“FED”) which is sealed under a predetermined level of vacuum pressure and method for making same includes a large-area substrate, an emitter electrode structure disposed on the substrate such that the emitter structure is disposed over a substantial portion of the substrate, a plurality of groups of micropoints, with each group having a predetermined number of micropoints and with each group being disposed at discrete positions on the emitter electrode structure, an insulating layer disposed over the substrate, with the insulating layer having openings therethrough which have a diameter within a predetermined range, and with each openings surrounding at least a portion a micropoint, an extraction structure disposed on the insulating layer, with the extraction structure having openings therethrough which have a diameter within a predetermined range, with each openings surrounding at least a portion of a micropoint, and with the openings in the extraction structure being aligned with openings in the insulating layer, a faceplate disposed above and spaced away from the extraction structure that is transparent to predetermined wavelengths of light, an indium tin oxide (“ITO”) layer disposed on a surface of the faceplate towards the extraction structure, a matrix member disposed on the ITO layer, with the matrix member defining areas of the ITO surface that are to serve as pixel areas, with the pixel areas being aligned with the micropoints of a group micropoints, cathodoluminescent material disposed on the ITO in a plurality pixel areas, with the cathodoluminescent material at a particular pixel area being aligned to receive electron emitted from the micropoints associated that pixel area, and a plurality of spacers disposed between the faceplate and the extraction structure at predetermined locations, with each spacer having a height and cross-sectional shape commensurate with stresses that spacer will encounter caused by the vacuum pressure within the FED.
    • 44. 发明授权
    • Anodically-bonded elements for flat panel displays
    • 用于平板显示器的阳极接合元件
    • US06422906B1
    • 2002-07-23
    • US09350081
    • 1999-07-08
    • James J. HofmannJason B. ElledgeZhong-Yi XiaDavid A. Cathey
    • James J. HofmannJason B. ElledgeZhong-Yi XiaDavid A. Cathey
    • H01J924
    • H01J9/242H01J9/185H01J2329/8625H01J2329/863
    • A process is disclosed for anodically bonding an array of spacer columns to one of the inner major faces on one of the generally planar plates of an evacuated, flat-panel video display. The process includes the steps of: providing a generally planar plate having a plurality of spacer column attachment sites; providing electrical interconnection between all attachment sites; coating each attachment site with a patch of oxidizable material; providing an array of unattached permanent glass spacer columns, each unattached permanent spacer column being of uniform length and being positioned longitudinally perpendicular to a single plane, with the plane intersecting the midpoint of each unattached spacer column; positioning the array such that an end of one permanent spacer column is in contact with the oxidizable material patch at each attachment site; and anodically bonding the contacting end of each permanent spacer column to the oxidizable material layer. The invention also includes an evacuated flat panel display having spacer structures which are anodically bonded to an internal major face of the display, as well as a face plate assembly manufactured by the aforestated process.
    • 公开了一种用于将隔离柱阵列阳极结合到抽空的平板显示器的一个平面板上的内主表面之一的工艺。 该方法包括以下步骤:提供具有多个间隔柱附着位点的大致平面的板; 提供所有附件位置之间的电气互连; 用一块可氧化材料涂覆每个附着部位; 提供一组未连接的永久性玻璃间隔柱,每个未连接的永久间隔柱具有均匀的长度并且纵向垂直于单个平面定位,该平面与每个未连接的间隔柱的中点相交; 定位阵列使得一个永久间隔柱的末端在每个附着位置与可氧化材料贴片接触; 并将每个永久间隔柱的接触端阳极结合到可氧化材料层上。 本发明还包括具有阳极结合到显示器的内部主面的间隔结构的抽真空平板显示器以及通过前述方法制造的面板组件。
    • 46. 发明授权
    • Semiconductor processing method using high pressure liquid media treatment
    • 半导体加工方法采用高压液体介质处理
    • US06417102B1
    • 2002-07-09
    • US09603849
    • 2000-06-26
    • David A. CatheyMark Durcan
    • David A. CatheyMark Durcan
    • H01L2144
    • H01L21/76819H01L21/7684H01L21/76882
    • In accordance with one aspect of the invention, a semiconductor processing method of treating a semiconductor wafer provides a wafer within a volume of liquid. The wafer has some electrically conductive material formed thereover. The volume of liquid within the chamber with the wafer therein is established at a pressure of greater than 1 atmosphere and at a temperature of at least 200° C. and below and within 10% of the melting point of the electrically conductive material. In accordance with another aspect, the volume of liquid within the chamber with the wafer therein is established at a pressure of greater than 1 atmosphere. After establishing the pressure of greater than 1 atmosphere, the pressure of the volume of liquid is lowered to a point effective to vaporize said liquid and the vapor is withdrawn from the chamber. In accordance with still another aspect, a semiconductor processing method of increasing planarity of an outer surface on a substrate comprises exposing the outer surface to a volume of liquid at a pressure of greater than about 200 atmospheres. The invention has particular utility to more completely filling contact openings with electrically conductive material, and to increasing substrate planarity. A typical preferred treatment is expected to last anywhere from seconds up to ten minutes or more.
    • 根据本发明的一个方面,处理半导体晶片的半导体处理方法在一定体积的液体内提供晶片。 该晶片具有形成在其上的一些导电材料。 在其中具有晶片的腔室内的液体体积建立在大于1大气压的压力下,并且在至少200℃的温度以及导电材料的熔点的低于和低于10%的温度下。 根据另一方面,其中具有晶片的腔室内的液体体积建立在大于1个大气压的压力下。 在建立大于1个大气压力之后,将液体体积的压力降低到有效蒸发所述液体的一个点,并且蒸气从室中排出。 根据另一方面,一种增加衬底上的外表面的平面度的半导体加工方法包括将外表面暴露于大于约200大气压的压力下的一定体积的液体。 本发明特别有用于更完全地用导电材料填充接触开口,并且增加衬底平面度。 预期典型的优选治疗将持续从几秒到十分钟或更长。
    • 48. 发明授权
    • Matrix addressable display with electrostatic discharge protection
    • 具有静电放电保护的矩阵可寻址显示
    • US06356250B1
    • 2002-03-12
    • US09640826
    • 2000-08-16
    • David A. CatheyGlen E. HushManny K. F. MaCraig M. DunhamDavid A. Zimlich
    • David A. CatheyGlen E. HushManny K. F. MaCraig M. DunhamDavid A. Zimlich
    • G09G328
    • H01J31/127H01J3/022H01J2201/319H01J2329/92
    • A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.
    • 场发射显示器包括耦合到发射极衬底和提取栅极的静电放电保护电路。 在优选实施例中,静电放电电路包括在网格部分和第一参考电位之间或在行线和第二参考电位之间反向偏置的二极管。 二极管提供电流路径来放电静电压,从而防止在发射极组和提取栅之间保持高电压差。 因此,二极管可防止发射极组以可能损坏或破坏发射极组的高速率发射电子。 在一个实施例中,二极管直接连接在网格部分和行线之间。 在一个实施例中,二极管形成在承载网格部分的绝缘层中。 在另一个实施例中,二极管被集成到发射器衬底中。