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41. 发明授权

US5114888A Silicon nitride sintered body and method for producing same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US5114888A
公开(公告)日：1992-05-19
申请号：US612691
申请日：1990-11-15
申请人： Kenichi Mizuno , Yo Tajima , Masakazu Watanabe
发明人： Kenichi Mizuno , Yo Tajima , Masakazu Watanabe
IPC分类号： C04B35/593
CPC分类号： C04B35/5935
摘要： Silicon nitride base sintered body consists of: 1 to 20 wt % (as oxides) of at least one of rare earth elements; 0.5 to 8 wt % of V (as V.sub.2 O.sub.5); 0.5 to 8 wt % (as oxides) of at least one of Nb, Ta, Cr, Mo and W; sum of the Va and VIa group elements according to the Periodic Table of the International Version (as oxides) being 1 to 10 wt %; and balance silicon nitride. It has high strength of 690-880 MPa (70-90 kgf/mm.sup.2) and high oxidation resistance both at 1350.degree. C. It is produced by 2 stage gas-pressure sintering in pressurized N.sub.2 atmosphere, primarily at 1700.degree.-1900.degree. C. at 1 MPa (10 atm) or less and secondarily at 1600.degree.-1900 C. at 10 MPa (100 atm) or above.
摘要翻译：氮化硅基烧结体由以下组成：1〜20重量％（作为氧化物）的稀土元素中的至少一种; 0.5至8重量％的V（作为V 2 O 5）; Nb，Ta，Cr，Mo和W中的至少一种为0.5〜8重量％（作为氧化物）根据国际版本（作为氧化物）的周期表，Va和VIa族元素的总和为1至10wt％; 并平衡氮化硅。它在1350℃下具有690-880MPa（70-90kgf / mm2）的高强度和高抗氧化性。它在加压N 2气氛中，主要在1700°-1900℃下通过2级气压烧结在10MPa（100大气压）以上，在1MPa（10atm）以下，二次在1600〜1900℃。

42. 发明授权

US5043452A Titanium or silicon atom containing oxazolidine compound 失效
标题翻译：含有恶唑烷化合物的钛或硅原子
公开(公告)号：US5043452A
公开(公告)日：1991-08-27
申请号：US458372
申请日：1989-12-28
申请人： Hiroshi Miwa , Yoshitaka Okude , Masakazu Watanabe , Sakuichi Konishi
发明人： Hiroshi Miwa , Yoshitaka Okude , Masakazu Watanabe , Sakuichi Konishi
IPC分类号： C07F7/00 , C07F7/04 , C07F7/18 , C07F7/28
CPC分类号： C07F7/28 , C07F7/006 , C07F7/045 , C07F7/1824
摘要： Disclosed is a novel oxazolidine compound containing a titanium atom or a silicon atom. The ozazolidine compound is represented by the following formula [I]; ##STR1## wherein R represents a hydrogen atom, a C.sub.1 -C.sub.10 alkyl, an aryl group, a vinyl group, a C.sub.1 -C.sub.10 halogen substituted alkyl group or a C.sub.1 -C.sub.10 alkoxy group, M represents a silicon atom or a titanium atom, R.sup.1 represents a C.sub.2 -C.sub.5 alkylene group, R.sup.2 and R.sup.3 respectively represent a hydrogen atom, a C.sub.1 -C.sub.10 alkyl group or an aryl group, R.sup.4 represents a hydrogen atom or a methyl group and n is an integer of 0 to 3.

43. 发明授权

US4833871A Apparatus for inserting optical fibers into a spacer having spiral grooves 失效
标题翻译：用于将光纤插入具有螺旋槽的间隔件中的装置
公开(公告)号：US4833871A
公开(公告)日：1989-05-30
申请号：US271581
申请日：1988-11-15
申请人： Satoshi Ogawa , Masanori Fujikawa , Masakazu Watanabe
发明人： Satoshi Ogawa , Masanori Fujikawa , Masakazu Watanabe
IPC分类号： G02B6/44
CPC分类号： G02B6/4491 , G02B6/4407 , G02B6/4489
摘要： An apparatus and method for inserting optical fibers into a spacer having spiral grooves to produce a spacer type optical fiber cable wherein a torsional force detecting device is formed integrally with the optical fiber gathering device for inserting optical fibers into the spiral grooves. The torsional force exerted on the device by the spacer is detected by a tension/compression measuring device and the axial speed of the spacer is controlled in response to the measured torsional force so as to reduce the torsional force to zero.

44. 发明授权

US08633511B2 Method of producing semiconductor device packaging having chips attached to islands separately and covered by encapsulation material 有权
标题翻译：制造半导体器件封装的方法，其具有单独地附接到岛并且被封装材料覆盖的芯片
公开(公告)号：US08633511B2
公开(公告)日：2014-01-21
申请号：US13203447
申请日：2010-02-25
申请人： Masakazu Watanabe , Takashi Kuramochi , Masahiro Hatanai
发明人： Masakazu Watanabe , Takashi Kuramochi , Masahiro Hatanai
IPC分类号： H01L29/66 , H01L23/48 , H01L27/11 , H01L23/495
CPC分类号： H01L23/49575 , H01L21/561 , H01L21/565 , H01L23/3107 , H01L23/4952 , H01L23/49562 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/2919 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/73265 , H01L2224/83801 , H01L2224/83851 , H01L2224/85 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/10253 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/20754 , H01L2924/00014 , H01L2924/0665 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.
摘要翻译：一种半导体器件，其具有：分离的岛状物和岛状物; 一端接近岛屿的线索; 控制元件，其附接到岛并通过细金属丝连接到引线; 以及开关元件，其连接到岛上并且通过金属线连接到引线。此外，细金属丝和细金属丝布置成相交。

45. 发明申请

US20110309408A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110309408A1
公开(公告)日：2011-12-22
申请号：US13203447
申请日：2010-02-25
申请人： Masakazu Watanabe , Takashi Kuramochi , Masahiro Hatanai
发明人： Masakazu Watanabe , Takashi Kuramochi , Masahiro Hatanai
IPC分类号： H01L29/739 , H01L29/73 , H01L21/56 , H01L29/78
CPC分类号： H01L23/49575 , H01L21/561 , H01L21/565 , H01L23/3107 , H01L23/4952 , H01L23/49562 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/2919 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/73265 , H01L2224/83801 , H01L2224/83851 , H01L2224/85 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/10253 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/20754 , H01L2924/00014 , H01L2924/0665 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.
摘要翻译：一种半导体器件，其具有：分离的岛状物和岛状物; 一端接近岛屿的线索; 控制元件，其附接到岛并通过细金属丝连接到引线; 以及开关元件，其连接到岛上并且通过金属线连接到引线。此外，细金属丝和细金属丝布置成相交。

46. 发明授权

US06251483B1 Recyclable cold curing aqueous coating composition and method for recycling it 失效
标题翻译：可回收冷固化水性涂料组合物及其回收方法
公开(公告)号：US06251483B1
公开(公告)日：2001-06-26
申请号：US09388553
申请日：1999-09-02
申请人： Masakazu Watanabe , Masahiro Yamauchi , Susumu Hibi , Junichi Sueyoshi
发明人： Masakazu Watanabe , Masahiro Yamauchi , Susumu Hibi , Junichi Sueyoshi
IPC分类号： B05D312
CPC分类号： C08G59/1461 , B05B14/40 , B05B14/46 , C09D163/00 , Y02P20/582 , Y02P70/36
摘要： The present invention provides a recyclable cold curing aqueous coating composition, comprising (a) an oxidative-polymerizable, modified epoxy resin with an acid value of 25 to 60, comprising 20 to 70 percents by weight of an epoxy resin based on the total weight of said modified epoxy resin, of which a particle size is not more than 200 nm in an aqueous medium, (b) an anticorrosive pigment and/or an ampholytic metal oxide and (c) a drier. The recyclable cold curing aqueous coating composition of the present invention can provide a coating film having improved water resistance and corrosion resistance, and repeatedly reuse by recycling and readjusting. The present invention also provides a method for recycling the cold curing aqueous coating composition.
摘要翻译：本发明提供一种可回收的冷固化水性涂料组合物，其包含（a）酸值为25至60的可氧化聚合的改性环氧树脂，其包含基于总重量的20至70重量％的环氧树脂所述改性环氧树脂在水性介质中的粒度不超过200nm，（b）防腐颜料和/或两性电解金属氧化物和（c）干燥剂。本发明的可回收冷固化水性涂料组合物可以提供具有改善的耐水性和耐腐蚀性的涂膜，并通过再循环和重新调整反复再利用。本发明还提供一种再循环冷固化水性涂料组合物的方法。

47. 发明授权

US6128657A Load sharing system 失效
标题翻译：负载分担系统
公开(公告)号：US6128657A
公开(公告)日：2000-10-03
申请号：US699562
申请日：1996-08-19
申请人： Katsutoshi Okanoya , Susumu Matsumoto , Kazuhiko Shoji , Yutaka Konishi , Akira Takahashi , Masamitsu Kimura , Mitsuru Kusakawa , Takahito Sakai , Minoru Kyoya , Masakazu Watanabe
发明人： Katsutoshi Okanoya , Susumu Matsumoto , Kazuhiko Shoji , Yutaka Konishi , Akira Takahashi , Masamitsu Kimura , Mitsuru Kusakawa , Takahito Sakai , Minoru Kyoya , Masakazu Watanabe
IPC分类号： G06F9/50 , H04L29/06 , H04L29/08 , G06F15/173
CPC分类号： G06F9/505 , G06F9/5083 , H04L67/1002 , H04L67/1008 , H04L67/1029 , H04L67/1034
摘要： A load sharing system composed of a plurality of servers that are interconnected over a network for providing optimum and efficient operations at high reliability. The system employs a plurality of servers and a communication controller. A state manager in the communication controller first establishes connection paths on the network to reach the state management agents. The state manager then performs a centralized management of activity status of the servers based on status information collected from the state management agents via the established connection paths. A distribution processor disposed in the communication controller receives service requests from user terminals via a network and determines their respective destinations according to management data provided by the state manager. The distribution processor then forwards the service requests to the servers over the communication medium to direct their execution. An operation controller activates or deactivates a plurality of parameters which will define how to distribute the service requests to the applications.
摘要翻译：由多个服务器组成的负载共享系统，其通过网络互连，以高可靠性提供最佳和高效的操作。该系统采用多个服务器和通信控制器。通信控制器中的状态管理器首先在网络上建立连接路径以到达状态管理代理。然后，状态管理器基于通过建立的连接路径从状态管理代理收集的状态信息，对服务器的活动状态进行集中管理。设置在通信控制器中的分发处理器经由网络从用户终端接收服务请求，并根据由状态管理器提供的管理数据确定其各自的目的地。分配处理器然后通过通信介质将服务请求转发到服务器以指导其执行。操作控制器激活或停用多个参数，这些参数将定义如何将服务请求分发到应用程序。

48. 发明授权

US5045513A Sintered body of silicon nitride and its manufacture 失效
标题翻译：氮化硅烧结体及其制造
公开(公告)号：US5045513A
公开(公告)日：1991-09-03
申请号：US393726
申请日：1989-08-15
申请人： Kenichi Mizuno , Katsuhisa Yabuta , Masakazu Watanabe
发明人： Kenichi Mizuno , Katsuhisa Yabuta , Masakazu Watanabe
IPC分类号： C04B35/584 , C04B35/593
CPC分类号： C04B35/5935
摘要： A sintered body of silicon nitride with high density, strength, toughness, and hardness, which can be used for a structural part of an engine, etc. The sintered body of the invention includes 80 to 94 wt % Si.sub.3 N.sub.4, 2 to 10 wt % Mg compound calculated in MgO equivlent, and 2 to 10 wt % Y compound calculated in Y.sub.2 O.sub.3 equivalent. The Si.sub.3 N.sub.4 contains 5 to 40% .alpha.-phase. The sintered body is manufactured in the following steps: (a) mixing powdery Si.sub.3 N.sub.4 with a Mg compound and a Y compound in the above proportions, and then molding the mixture in which the Si.sub.3 N.sub.4 powder contains 80% or more .alpha.-phase and its grains are 1 .mu.m or less in diameter on average; (b) performing primary sintering at 1,600.degree. C. or less in an atmospher of nitrogen or of an inert gas at 20 atm or less; and (c) performing secondary sintering at 1,400.degree. to 1,600.degree. C. in an atmosphere of nitrogen or of an inert gas at 300 atm or more.
摘要翻译：具有高密度，强度，韧性和硬度的氮化硅烧结体，其可用于发动机的结构部件等。本发明的烧结体包含80〜94重量％的Si 3 N 4，2〜10重量％镁化合物按MgO计算，和2〜10重量％的Y化合物按Y2O3当量计算。 Si3N4含有5〜40％的α-相。该烧结体按以下步骤制造：（a）以上述比例混合粉末状Si 3 N 4与Mg化合物和Y化合物，然后将其中Si 3 N 4粉末含有80％以上的α-相及其晶粒的混合物平均直径1米以下; （b）在大气压的氮气或20atm以下的惰性气体中，在1600℃以下进行初次烧结; 和（c）在氮气气氛中或在大气压为300atm以上的惰性气体中，在1400℃〜1600℃进行二次烧结。

49. 发明授权

US5023298A Curable composition 失效
公开(公告)号：US5023298A
公开(公告)日：1991-06-11
申请号：US457939
申请日：1989-12-27
申请人： Hiroshi Miwa , Yoshitaka Okude , Masakazu Watanabe , Sakuichi Konishi
发明人： Hiroshi Miwa , Yoshitaka Okude , Masakazu Watanabe , Sakuichi Konishi
IPC分类号： C09D5/00 , C08G59/00 , C08G59/18 , C08G59/40 , C08K5/35 , C08K5/5415 , C08L43/04 , C08L57/10 , C08L63/00 , C09D133/00 , C09D143/04 , C09D163/00 , C09D201/08
CPC分类号： C09D143/04 , C08K5/35 , C08K5/5415 , C08L43/04 , C08L57/10 , C09D133/00
摘要： Disclosed is a curable composition which is superior in chemical resistance and weather resistance and appearance by the use of oxazolidine compounds, comprising (A) a compound having a carboxylic anhydride group, (B) an oxazolidine compound and (C) a polymer containing an alkoxysilyl group. An epoxy compound (D) may be added to the composition.

50. 发明授权

US09293555B2 Semiconductor device and manufacturing method of same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09293555B2
公开(公告)日：2016-03-22
申请号：US13944316
申请日：2013-07-17
申请人： Masakazu Watanabe
发明人： Masakazu Watanabe
IPC分类号： H01L29/51 , H01L29/739 , H01L29/06
CPC分类号： H01L29/511 , H01L29/063 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate; an insulating film arranged on the semiconductor substrate; an electrode that contacts a portion of a side surface of the insulating film; a first passivation film that is arranged extending from the electrode to the insulating film, and contacts a surface of the insulating film, and contacts a surface of the electrode; and a second passivation film that is arranged on the first passivation film. A difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode, and a position where the first passivation film contacts a boundary between the electrode and the insulating film is positioned lower than an upper surface of the insulating film.
摘要翻译：半导体器件包括半导体衬底; 布置在所述半导体衬底上的绝缘膜; 与所述绝缘膜的侧面的一部分接触的电极; 第一钝化膜，其从所述电极延伸到所述绝缘膜，并且与所述绝缘膜的表面接触并接触所述电极的表面; 以及布置在第一钝化膜上的第二钝化膜。第一钝化膜的线膨胀系数与绝缘膜的线膨胀系数之差小于第一钝化膜的线膨胀系数与电极的线膨胀系数之差，第一钝化膜接触电极和绝缘膜之间的边界位于比绝缘膜的上表面低的位置。

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