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41. 发明授权

US5500388A Heat treatment process for wafers 失效
标题翻译：晶圆热处理工艺
公开(公告)号：US5500388A
公开(公告)日：1996-03-19
申请号：US202457
申请日：1994-02-28
申请人： Reiji Niino , Tomoyuki Ohbu , Hiroaki Ikegawa , Ken Nakao , Yoshiyuki Fujita , Tsutomu Haraoka , Makoto Kobayashi , Naoya Kaneda , Hiroshi Kumada
发明人： Reiji Niino , Tomoyuki Ohbu , Hiroaki Ikegawa , Ken Nakao , Yoshiyuki Fujita , Tsutomu Haraoka , Makoto Kobayashi , Naoya Kaneda , Hiroshi Kumada
IPC分类号： C23C16/46 , H01L21/20 , H01L21/285
CPC分类号： C23C16/463 , C23C16/46 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28512
摘要： In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers. This suppresses the growth of a natural oxidation film and improves characteristics of a semiconductor device. The same principle may apply to an oxide film formation and an impurity dispersion.
摘要翻译：为了在半导体晶片的表面上形成薄膜，将多个晶片分别安装在晶片舟的环形安装件上，同时将反应管内的温度设定为例如400℃ 氮气气氛。在将晶片舟装载到反应管中之后，以例如100℃/ min的速率将反应管内的温度升高至例如620℃，并将SiH 4气体供应到硅衬底以形成多晶硅膜。成膜后，迫使空气沿加热部的内表面流动，强制冷却反应管的内部。在使用具有硅衬底和形成在硅衬底的表面上的金属膜的晶片形成金属硅膜的情况下，将反应管内的温度设定为例如 100℃，用于装载晶片。这抑制了天然氧化膜的生长，并提高了半导体器件的特性。相同的原理可能适用于氧化膜形成和杂质分散。

42. 发明授权

US5234501A Oxidation metod 失效
标题翻译：氧化组合
公开(公告)号：US5234501A
公开(公告)日：1993-08-10
申请号：US825422
申请日：1992-01-24
申请人： Ken Nakao , Sadao Maruchi , Yoshio Sakamoto
发明人： Ken Nakao , Sadao Maruchi , Yoshio Sakamoto
IPC分类号： C30B33/00 , H01L21/00
CPC分类号： H01L21/67115 , C30B33/005
摘要： The invention provides an oxidation method which utilizes a processing tube, a combustion chamber connected to the processing tube, inner and outer coaxial guide tubes connected to the combustion chamber, and an auxiliary combustion chamber connected to the combustion chamber, which includes the steps of placing a plurality of objects at predetermined intervals in the processing tube; generating steam in the combustion chamber by combustion of a mixture of oxygen and hydrogen gases and supplying the steam to the processing tube wherein the steam is generated by individually introducing oxygen gas and hydrogen gas into the combustion chamber through the outer and inner coaxial guide tubes and by heating the hydrogen gas in the inner guide tube or both the inner guide tube and the auxiliary combustion chamber such that ignition of the oxygen and hydrogen gases occurs when the gases come into contact with each other; and preventing a flame generated by the ignition of the gases from reaching an interior surface portion of at least one of the auxiliary combustion chamber and the combined chamber.
摘要翻译：本发明提供了一种利用处理管，连接到处理管的燃烧室，连接到燃烧室的内部和外部同轴导管以及连接到燃烧室的辅助燃烧室的氧化方法，其包括以下步骤：处理管中的预定间隔的多个物体; 通过燃烧氧气和氢气的混合物而在燃烧室中产生蒸气，并将蒸汽供给到处理管中，其中蒸汽是通过外部和内部同轴引导管将氧气和氢气单独引入燃烧室而产生的，通过加热内导管或内引导管和辅助燃烧室两者中的氢气，使得当气体彼此接触时，发生氧气和氢气的点燃; 并且防止由气体点燃产生的火焰到达辅助燃烧室和组合室中的至少一个的内表面部分。

43. 发明授权

US4937434A Heat treatment apparatus and heat treatment method 失效
标题翻译：热处理设备及热处理方法
公开(公告)号：US4937434A
公开(公告)日：1990-06-26
申请号：US312500
申请日：1989-02-21
申请人： Ken Nakao
发明人： Ken Nakao
IPC分类号： G01K1/14 , G05D23/22 , H01L21/00
CPC分类号： H01L21/67109 , G01K1/146 , G05D23/1934 , G05D23/22
摘要： In a heat treatment apparatus, a temperature measuring element is arranged to be movable along an arrangement direction of a large number of objects placed in a process tube. A temperature distribution of a heat treatment area inside the process tube can be continuously measured by this temperature measuring element with high accuracy. As a result, internal temperature control of the process tube can be facilitated with high precision.
摘要翻译：在热处理装置中，温度测量元件布置成沿着放置在处理管中的大量物体的布置方向移动。可以通过该温度测量元件以高精度连续地测量处理管内的热处理区域的温度分布。结果，可以高精度地促进处理管的内部温度控制。

44. 发明授权

US08546185B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08546185B2
公开(公告)日：2013-10-01
申请号：US13399482
申请日：2012-02-17
申请人： Ken Nakao , Muneo Harada , Itaru Iida , Eiji Yamaguchi
发明人： Ken Nakao , Muneo Harada , Itaru Iida , Eiji Yamaguchi
IPC分类号： H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0346 , H01L2224/0401 , H01L2224/05551 , H01L2224/0557 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11002 , H01L2224/11332 , H01L2224/11505 , H01L2224/13009 , H01L2224/13076 , H01L2224/13082 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13294 , H01L2224/13339 , H01L2224/8184 , H01L2224/81986 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2224/03 , H01L2224/11 , H01L2224/05552 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.
摘要翻译：本发明提供一种半导体器件的制造方法，其特征在于，具备：多个半导体基板，形成有穿过所述基板的主面之间的通孔，并填充有多孔导体; 在对准填充在通孔中的多孔导体的同时堆叠多个半导体衬底; 将含有粒状导体的导电油墨引入到所述多个堆叠半导体衬底的多孔导体中; 并烧结多个堆叠的半导体衬底。

45. 发明授权

US08476560B2 Thermal processing furnace 有权
公开(公告)号：US08476560B2
公开(公告)日：2013-07-02
申请号：US12320433
申请日：2009-01-26
申请人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
发明人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
IPC分类号： F27B5/14 , F27D11/02 , H05B3/66
CPC分类号： H01L21/67109 , F27B17/0025 , F27D11/02 , F27D99/0006 , H05B3/08
摘要： A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.

46. 发明授权

US08033823B2 Heat processing apparatus 有权
标题翻译：热处理设备
公开(公告)号：US08033823B2
公开(公告)日：2011-10-11
申请号：US11922010
申请日：2006-06-12
申请人： Ken Nakao , Kazuhiko Kato
发明人： Ken Nakao , Kazuhiko Kato
IPC分类号： F27D3/12
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/54 , H01L21/324 , H01L21/67098 , H01L21/67103 , H01L21/67109 , Y10T29/4935
摘要： The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other.
摘要翻译：本发明是一种热处理装置，包括：处理容器，其以层状方式接收待处理的多个物体，以对被处理物进行预定的加热处理; 管状加热器，其设置成围绕处理容器，所述管状加热器能够加热被处理物体; 用于排出加热器和处理容器之间的空间中的气氛的排气系统; 以及将冷却流体吹入空间以冷却处理容器的冷却单元。加热器具有管状绝热构件和布置在绝热构件的内周上的加热电阻器。冷却单元具有嵌入绝热构件中的多个吹出喷嘴。每个喷吹嘴都以这样的方式形成，使得喷嘴的入口孔和出口孔彼此不直线对准。

47. 发明申请

US20090175705A1 SUBSTRATE TRANSFER APPARATUS AND VERTICAL HEAT PROCESSING APPARATUS 有权
标题翻译：基板传送装置和垂直加热装置
公开(公告)号：US20090175705A1
公开(公告)日：2009-07-09
申请号：US12225920
申请日：2007-04-23
申请人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
发明人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
IPC分类号： H01L21/677 , B25B11/00 , H01L21/673 , H01L21/68
CPC分类号： H01L21/67098 , H01L21/6838 , H01L21/68707
摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.
摘要翻译：本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。

48. 发明申请

US20080295963A1 Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造装置的供气系统和气体供应蓄积单元
公开(公告)号：US20080295963A1
公开(公告)日：2008-12-04
申请号：US12068029
申请日：2008-01-31
申请人： Shuji Moriya , Ken Nakao
发明人： Shuji Moriya , Ken Nakao
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： C23C16/4402 , C23C16/4404 , C23C16/45561 , C30B25/14 , C30B31/16 , H01J37/3244 , Y02E60/34
摘要： A gas supply system 200 is a system that supplies a predetermined gas from a gas supply source 210 to a processing part 110 of a semiconductor manufacturing apparatus 100. The gas supply system 200 includes a gas supply passage apparatus 220 that is connected to the gas supply source 210 and the processing part 110. The gas supply passage apparatus 220 is provided with a plurality of fluid controllers (a hand valve 231, a pressure reducing valve 232, a manometer 233, a check valve 234, a first shutoff valve 235, a second shutoff valve 236, a massflow controller 237, and a gas filter 238), and passage structuring members (passage blocks 241 to 249) that are connected to positions between the respective fluid controllers 231 to 238 and form gas passages 221 to 229. The passage structuring members are made of a carbon material. Thus, when a corrosive gas is supplied to the processing part 110, mixture of a metal contaminant into a substrate to be processed W can be prevented as much as possible.
摘要翻译：气体供给系统200是将预定气体从气体供给源210供给到半导体制造装置100的处理部110的系统。气体供给系统200包括气体供给通道装置220，其与气体供给源210和处理部110.气体供给通道装置220设置有多个流体控制器（手动阀231，减压阀232，压力计233，止回阀234，第一截止阀235，第二截止阀236，质量流量控制器237和气体过滤器238）以及与各个流体控制器231至238之间的位置连接并形成气体通道221至229的通道结构构件（通道块241至249）。通道结构构件由碳材料制成。因此，当向处理部110供给腐蚀性气体时，可以尽可能地防止金属污染物混入待处理基板W。

49. 发明申请

US20080245306A1 Vaporizer and semiconductor processing system 有权
标题翻译：汽化器和半导体加工系统
公开(公告)号：US20080245306A1
公开(公告)日：2008-10-09
申请号：US12076765
申请日：2008-03-21
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
IPC分类号： C23C16/00
CPC分类号： C23C16/4486
摘要： A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.
摘要翻译：用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间块。内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

50. 发明授权

US07207123B2 Dry air-supplying apparatus and treating apparatus 失效
标题翻译：干燥供气装置和处理装置
公开(公告)号：US07207123B2
公开(公告)日：2007-04-24
申请号：US10528230
申请日：2003-09-19
申请人： Takashi Tanahashi , Takanobu Asano , Ken Nakao , Katsuhiro Yamashita
发明人： Takashi Tanahashi , Takanobu Asano , Ken Nakao , Katsuhiro Yamashita
IPC分类号： F26B21/06
CPC分类号： F24F3/1423 , B01D53/06 , B01D53/261 , B01D2253/108 , B01D2253/25 , B01D2253/3425 , B01D2257/70 , B01D2257/80 , B01D2259/40007 , B01D2259/40052 , B01D2259/4009 , F24F2203/1032 , F24F2203/1056 , F24F2203/1072 , F24F2203/1084 , F24F2203/1088 , F24F2203/1096
摘要： Two rotors 18a, 18b each housing a honeycomb structure 25 carrying an absorbent is driven for rotation by a common motor 19. Partitioning members 17 define an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning members 17 and the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer space 10 of the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage 20, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage 21, and is heated by a heater, and passes through the recovery zones of both the rotors.
摘要翻译：每个容纳携带吸收剂的蜂窝结构25的两个转子18a，18b被驱动以便由公共电动机19旋转。分隔构件17根据分隔构件17和与其对应的转子之间的角度位置关系来限定转子中的吸收区域S和恢复区域U. 在吸收区S中，吸收剂从通过其的空气中除去水分和有机物质。在回收区U中，通过吸收水分和有机物而劣化的吸收剂的回收通过使用加热的干燥空气来预处理。从处理系统的传送空间10吸入的空气经由循环通道20依次通过两个转子的吸收区，然后返回到传送空间。已经通过两个转子的吸收区的清洁干燥空气的一部分被供给到排气通道21中，并被加热器加热，并且通过两个转子的回收区。

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