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    • 49. 发明授权
    • Thin film transistor substrate and thin film transistor used for the same
    • 薄膜晶体管基板和薄膜晶体管用于相同
    • US08242553B2
    • 2012-08-14
    • US12838954
    • 2010-07-19
    • Takahiro KorenariHiroshi Tanabe
    • Takahiro KorenariHiroshi Tanabe
    • H01L29/76
    • H01L27/1251H01L27/1214H01L29/78645H01L29/78648H01L29/7869H01L29/78696
    • A thin film transistor (TFT) substrate includes first and second TFTs on the same substrate. The first TFT has a feature that a lower conductive layer or a bottom gate electrode layer is provided between the substrate and a first insulating layer while an upper conductive layer or a top gate electrode layer is disposed on a second insulating layer formed on a semiconductor layer which is formed on the first insulating layer. The first conductive layer has first and second areas such that the first area overlaps with the first conductive layer without overlapping with the semiconductor layer while the second area overlaps with the semiconductor layer, and the first area is larger than the second area while the second insulating layer is thinner than the first insulating layer. The second TFT has the same configuration as the first TFT except that the gate electrode layer is eliminated.
    • 薄膜晶体管(TFT)基板在同一基板上包括第一和第二TFT。 第一TFT具有在基板和第一绝缘层之间设置下导电层或底栅极电极层的特征,而上导电层或顶栅电极层设置在形成于半导体层上的第二绝缘层上 其形成在第一绝缘层上。 第一导电层具有第一和第二区域,使得第一区域与第一导电层重叠而不与半导体层重叠,而第二区域与半导体层重叠,并且第一区域大于第二区域,而第二绝缘层 层比第一绝缘层薄。 除了除去栅电极层之外,第二TFT具有与第一TFT相同的结构。