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    • 6. 发明授权
    • Semiconductor light-emitting element for flip-chip mounting
    • 用于倒装芯片安装的半导体发光元件
    • US08581285B2
    • 2013-11-12
    • US13117555
    • 2011-05-27
    • Kazuaki Sorimachi
    • Kazuaki Sorimachi
    • H01L23/48
    • H01L33/405H01L33/44H01L33/642H01L2924/0002H01L2924/00
    • The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 μm but not greater than 30 μm.
    • 本发明涉及提供一种半导体发光元件,该半导体发光元件具有使用电镀金属层形成具有期望厚度的电极。 用于倒装芯片安装在电路基板上的半导体发光元件包括:半导体层,包括发光层,用于将半导体层连接到电路基板的N侧突起电极,以及用于 将所述半导体层连接到所述电路基板,其中,所述N侧凸块电极和所述P型凸块电极各自包括凸块下金属层和电镀金属层,所述凸块下金属层包括高反射率金属层 设置在面向半导体层的一侧和设置在与半导体层相对的一侧的金属层,并且电镀金属层的厚度不小于3μm,但不大于30μm。