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    • 44. 发明授权
    • Fan type chemical dispersion equipment
    • 风扇型化学分散设备
    • US07285248B2
    • 2007-10-23
    • US10381916
    • 2001-09-21
    • Kazunori YamamotoSatoshi Yamasaki
    • Kazunori YamamotoSatoshi Yamasaki
    • A62B7/08
    • A01M1/2072A01M1/2033A01M1/2055A01M1/2077A01M29/12A01N25/18A61L9/12A61L9/122
    • A fan type chemical dispersion equipment, wherein a chemical container (3) and a power supply storage body (2a) are disposed detachably from an equipment body (1) and so as not to be volumetrically limited with each other, whereby, because the equipment body, chemical container, and power supply storage body can be volumetrically formed independently of each other, the settings of a chemical holding amount relative to a fan air blow amount and long or short service time can be performed easily, the chemical container being capable of preventing a chemical impregnated body from being caught between the end face of a chemical container body (3a) and a cover body (3b), and a clip device being capable of firmly fixing the fan type chemical dispersion equipment to the held materials ranging from thin to thick ones.
    • 一种风扇型化学分散设备,其中化学容器(3)和电源存储体(2a)与设备主体(1)可拆卸地设置,以便不会被体积相互限制,由此 设备体,化学容器和电力存储体可以彼此独立地体积地形成,可以容易地进行相对于风扇吹气量的化学品保持量的设定和长或短的使用时间,化学容器能够 防止化学浸渍体被卡在药物容器主体(3a)的端面与盖体(3b)之间的夹持装置,以及能够将风扇型化学分散设备牢固地固定在保持材料上的夹具装置 范围从薄到厚。
    • 48. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09136400B2
    • 2015-09-15
    • US12934199
    • 2009-02-27
    • Satoshi TanimotoNorihiko KiritaniToshiharu MakinoMasahiko OguraNorio TokudaHiromitsu KatoHideyo OkushiSatoshi Yamasaki
    • Satoshi TanimotoNorihiko KiritaniToshiharu MakinoMasahiko OguraNorio TokudaHiromitsu KatoHideyo OkushiSatoshi Yamasaki
    • H01L21/00H01L29/861H01L29/16H01L29/20H01L29/22H01L29/45H01L29/47H01L29/872
    • H01L29/861H01L29/1602H01L29/1608H01L29/20H01L29/2003H01L29/22H01L29/45H01L29/452H01L29/456H01L29/47H01L29/475H01L29/872
    • In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
    • 在该接合元件1中,当施加正向电压时,在半导体层2中形成耗尽层,禁止存在于电极层4中的电子移动到半导体层2中。因此,大部分孔 半导体层3不会通过与半导体层2中的导电电子的复合而消失,而是在扩散到半导体层2中的同时到达电极层4.因此,接合元件1可以用作孔的良导体,同时避免影响 的电阻值,并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。 本发明可应用于任何半导体材料,其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置,例如金刚石,氧化锌(ZnO),铝 氮化物(AlN)或氮化硼(BN)。 本发明甚至也可应用于诸如硅(Si),碳化硅(SiC),氮化镓(GaN),砷化镓(GaAs)或锗(Ge)等室温下具有浅杂质水平的材料, 只要在如此低的温度下进行操作即可使热激发能足够小。