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41. 发明授权

US5917749A MRAM cell requiring low switching field 失效
标题翻译：需要低开关场的MRAM单元
公开(公告)号：US5917749A
公开(公告)日：1999-06-29
申请号：US862898
申请日：1997-05-23
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G11C11/56 , G11C11/15
CPC分类号： G11C11/5607 , G11C11/161 , G11C2211/5615 , G11C2211/5616
摘要： A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.
摘要翻译：一种低开关场多状态多层磁存储单元，包括两层平行堆叠的磁性材料，叠置关系并由一层非磁性材料隔开，以形成多层磁存储单元的一部分。两层磁性材料形成为使得该宽度小于两层磁性材料中的磁畴壁的长度和小于宽度的宽度，沿着其长度设定形状各向异性易轴。两层磁性材料中至少有一层具有大致平行于磁性材料层宽度的磁各向异性。

42. 发明授权

US5861328A Method of fabricating GMR devices 失效
标题翻译：制造GMR器件的方法
公开(公告)号：US5861328A
公开(公告)日：1999-01-19
申请号：US723438
申请日：1996-10-07
申请人： Saied N. Tehrani , Eugene Chen , Mark Durlam , Xiaodong T. Zhu , Clarence J. Tracy
发明人： Saied N. Tehrani , Eugene Chen , Mark Durlam , Xiaodong T. Zhu , Clarence J. Tracy
IPC分类号： H01L27/06 , H01L43/12 , H01L21/8238
CPC分类号： H01L43/12 , H01L27/0688
摘要： A method of fabricating GMR devices on a CMOS substrate structure with a semiconductor device formed therein. The method includes forming a dielectric system with a planar surface having a roughness in a range of 1 .ANG. to 20 .ANG. RMS on the substrate; disposing and patterning films of giant magneto-resistive material on the planar surface so as to form a memory cell; disposing a dielectric cap on the cell so as to seal the cell and provide a barrier to subsequent operations; forming vias through the dielectric cap and the dielectric system to interconnects of the semiconductor device; forming vias through the dielectric cap to the magnetic memory cell; and depositing a metal system through the vias to the interconnects and to the memory cell.
摘要翻译：一种在其上形成有半导体器件的CMOS衬底结构上制造GMR器件的方法。该方法包括形成具有平坦表面的电介质系统，该平面表面在衬底上的粗糙度范围为1安培至20安培RMS; 在平坦表面上设置和构图巨磁阻材料的薄膜以形成记忆单元; 在电池上设置电介质盖，以密封电池并为后续操作提供屏障; 通过所述电介质盖和所述介电系统形成通孔以连接所述半导体器件; 通过介电盖形成通孔到磁存储单元; 以及通过所述通孔将金属系统沉积到所述互连件和所述存储器单元。

43. 发明授权

US5831295A Current confinement via defect generator and hetero-interface interaction 失效
标题翻译：通过缺陷发生器和异质界面相互作用的电流限制
公开(公告)号：US5831295A
公开(公告)日：1998-11-03
申请号：US566388
申请日：1995-12-01
申请人： Jenn-Hwa Huang , Saied N. Tehrani
发明人： Jenn-Hwa Huang , Saied N. Tehrani
IPC分类号： H01L23/62 , H01L31/0328 , H01L23/48 , H01L31/0336
CPC分类号： H01L23/62 , H01L2924/0002
摘要： A semiconductor device including a plurality of layers of material defining a diffusion barrier. A defect generator positioned on the plurality of layers in overlying relationship to the diffusion barrier so as to produce a collection of defects at the diffusion barrier that operates as a current restriction. In a typical example, an ohmic contact is positioned around the mesa of a ridge VCSEL, which ohmic contact generates defects that accumulate at a hetero-interface near the active area and confine the current flow to a lasing volume of the VCSEL.
摘要翻译：一种包括限定扩散阻挡层的多层材料的半导体器件。一种缺陷发生器，其以与扩散阻挡层重叠的关系位于多个层上，以便在作为电流限制的扩散阻挡层产生缺陷的集合。在典型的示例中，欧姆接触定位在脊VCSEL的台面周围，该欧姆接触产生在有源区附近的异质界面处积累的缺陷，并将电流限制到VCSEL的激光体积。

44. 发明授权

US5768183A Multi-layer magnetic memory cells with improved switching characteristics 失效
标题翻译：具有改进的开关特性的多层磁存储单元
公开(公告)号：US5768183A
公开(公告)日：1998-06-16
申请号：US723159
申请日：1996-09-25
申请人： Xiaodong T. Zhu , Saied N. Tehrani , Mark Durlam , Eugene Chen
发明人： Xiaodong T. Zhu , Saied N. Tehrani , Mark Durlam , Eugene Chen
IPC分类号： G11C11/15 , G11C11/56
CPC分类号： G11C11/5607 , G11C11/15 , G11C2211/5615
摘要： A plurality of layers of magnetic material are stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell. The width of the cell is less than a width of magnetic domain walls within the magnetic layers so that magnetic vectors in the magnetic layers point along a length of the magnetic layers, and the ratio of the length to the width of the magnetic memory cell is in a range of 1.5 to 10. The magnetic layers are antiferromagnetically coupled when the ratio is less than 4 and ferromagnetically coupled when the ratio is greater than 4.
摘要翻译：多层磁性材料以平行的方式堆叠叠置，由非磁性材料层隔开，形成多层磁性存储单元。电池的宽度小于磁性层内的磁畴壁的宽度，使得磁性层中的磁矢量沿着磁性层的长度指向，并且磁性存储单元的长度与宽度的比率是在1.5至10的范围内。当该比率小于4时，磁性层反铁磁耦合，并且当该比率大于4时被磁化耦合。

45. 发明授权

US5768181A Magnetic device having multi-layer with insulating and conductive layers 失效
标题翻译：具有多层绝缘导电层的磁性器件
公开(公告)号：US5768181A
公开(公告)日：1998-06-16
申请号：US834968
申请日：1997-04-07
申请人： Theodore Zhu , Saied N. Tehrani
发明人： Theodore Zhu , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/56 , G11C7/00
CPC分类号： G11C11/15 , G11C11/5607 , G11C2211/5615
摘要： A magnetic device (40) having multi-layer (41-45) with insulating layer (45) and conductive layer (42). The conductive layer (42) is positioned between a first magnetic layer (41) and a third magnetic layer (44). The insulating layer (45) is positioned between a second magnetic layer (43) and the third magnetic layer (44), and which forms a tunnel junction between the second and third layers. Magnetic vectors in the first magnetic layer (41) magnetically couple with ones in the second magnetic layer (43) so that the magnetic coupling loop formed around the third magnetic layer (44) allows magnetic vectors in the third magnetic layer (44) to be switchable in a low magnetic field. Consequently, total power consumption of the magnetic device (60) decreases.
摘要翻译：具有绝缘层（45）和导电层（42）的具有多层（41-45）的磁性装置（40）。导电层（42）位于第一磁性层（41）和第三磁性层（44）之间。绝缘层（45）位于第二磁性层（43）和第三磁性层（44）之间，并且在第二层和第三层之间形成隧道结。第一磁性层（41）中的磁矢量与第二磁性层（43）中的磁性磁耦合，使得围绕第三磁性层（44）形成的磁耦合环允许第三磁性层（44）中的磁矢量为可在低磁场中切换。因此，磁性装置（60）的总功耗降低。

46. 发明授权

US5702831A Ferromagnetic GMR material 失效
标题翻译：铁磁GMR材料
公开(公告)号：US5702831A
公开(公告)日：1997-12-30
申请号：US553933
申请日：1995-11-06
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/324 , H01L27/222 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12465 , Y10T428/12632 , Y10T428/1275 , Y10T428/12854 , Y10T428/12861 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951
摘要： A multi-layer magnetic material (10) has magnetic vectors (21,22) that point along a length (27) of the material (10). Opposing magnetic fields cause the vectors to snap past the perpendicular position with a rapid change in the resistance of the material. The material is used as a memory cell (37,38,39,41) of a memory (36).
摘要翻译：多层磁性材料（10）具有指向材料（10）的长度（27）的磁性矢量（21,22）。相反的磁场使得矢量随着材料电阻的快速变化而跳过垂直位置。该材料用作存储器（36）的存储单元（37,38,39,41）。

47. 发明授权

US5699293A Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device 失效
标题翻译：操作具有多对存储单元的随机存取存储器件作为存储器件的方法
公开(公告)号：US5699293A
公开(公告)日：1997-12-16
申请号：US728023
申请日：1996-10-09
申请人： Saied N. Tehrani , Xiaodong T. Zhu , Eugene Chen , Mark Durlam
发明人： Saied N. Tehrani , Xiaodong T. Zhu , Eugene Chen , Mark Durlam
IPC分类号： G11C11/15 , G11C11/16 , G11C11/00
CPC分类号： G11C11/15 , G11C11/16
摘要： A magnetic random access memory device (10) has a plurality of pairs of memory cells (21a,21b), a column decoder (31), a row decoder (32), and a comparator (60). The pair of memory cells (21a,21b) is designated by column decoder (31) and row decoder (32) in response to a memory address. Complementary bits ("0" and "1") are stored in the pair of memory cells (21a,21b). When the state in the pair of memory cell (21a,21b) is read, both bits in the pair of memory cells (21a,21b) are compared to produce an output at one read cycle time to a bit line (70). This memory device omits a conventional auto-zeroing step so that a high speed MRAM device can be attained.
摘要翻译：磁性随机存取存储器件（10）具有多对存储单元（21a，21b），列解码器（31），行解码器（32）和比较器（60）。响应于存储器地址，由列解码器（31）和行解码器（32）指定该对存储单元（21a，21b）。互补位（“0”和“1”）存储在一对存储单元（21a，21b）中。当读出该对存储单元（21a，21b）中的状态时，将该对存储单元（21a，21b）中的两个位进行比较，以在一个读周期时间向位线（70）产生输出。该存储器件省略了常规的自动归零步骤，从而可以获得高速MRAM器件。

48. 发明授权

US06233172B1 Magnetic element with dual magnetic states and fabrication method thereof 有权
标题翻译：具有双磁状态的磁性元件及其制造方法
公开(公告)号：US06233172B1
公开(公告)日：2001-05-15
申请号：US09464807
申请日：1999-12-17
申请人： Eugene Youjun Chen , Jon Michael Slaughter , Mark Durlam , Mark DeHerrera , Saied N. Tehrani
发明人： Eugene Youjun Chen , Jon Michael Slaughter , Mark Durlam , Mark DeHerrera , Saied N. Tehrani
IPC分类号： G11C1115
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/16 , H01F10/3272
摘要： An improved and novel magnetic element (10; 10′; 50; 50′; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.
摘要翻译：包括多个薄膜层的改进和新颖的磁性元件（10; 10'; 50; 50'; 80），其中所述位端磁静电消磁场抵消所述结构的总正耦合以获得双重磁状态零外场。另外公开了一种通过提供多个薄膜层来制造磁性元件（10）的方法，其中薄膜层的位端磁静电消磁场抵消该结构的总正耦合以获得双重磁状态零外场。

49. 发明授权

US06211090B1 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories 有权
标题翻译：制造用于磁阻随机存取存储器的磁通集中层的方法
公开(公告)号：US06211090B1
公开(公告)日：2001-04-03
申请号：US09528971
申请日：2000-03-21
申请人： Mark Durlam , Eugene Youjun Chen , Saied N. Tehrani , Jon Michael Slaughter , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Mark Durlam , Eugene Youjun Chen , Saied N. Tehrani , Jon Michael Slaughter , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： H01L2100
CPC分类号： H01L27/222 , B82Y10/00
摘要： A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). The method includes the steps of depositing a bottom dielectric layer (32), an optional etch stop (34) layer, and a top dielectric layer (36) proximate the magnetic memory bit (10). A trench (38) is etched in the top dielectric layer (36) and the bottom dielectric layer (32). A first barrier layer (42) is deposited in the trench (38). Next, a metal system (29) is deposited on a surface of the first barrier layer (42). The metal system (29) includes a copper (Cu) seed material (44), and a plated copper (Cu) material (46), a first outside barrier layer (50), a flux concentrating layer (52), and a second outside barrier layer (54). The metal system (29) is patterned and etched to define a copper (Cu) damascene bit line (56).
摘要翻译：一种制造用于磁存储器件的通量集中器的方法，包括以下步骤：提供至少一个磁存储器位（10），并在其附近形成限定铜（Cu）镶嵌位线（56）的材料堆，所述铜（Cu）镶嵌位线包括通量集中层（52）。该方法包括以下步骤：沉积底部电介质层（32），可选的蚀刻停止层（34）层和靠近磁存储器位（10）的顶部电介质层（36）。在顶部电介质层（36）和底部电介质层（32）中蚀刻沟槽（38）。第一阻挡层（42）沉积在沟槽（38）中。接下来，金属系统（29）沉积在第一阻挡层（42）的表面上。金属系统（29）包括铜（Cu）种子材料（44）和镀铜（Cu）材料（46），第一外部阻挡层（50），集流层（52）和第二外部阻挡层（54）。金属系统（29）被图案化和蚀刻以限定铜（Cu）镶嵌位线（56）。

50. 发明授权

US06177204B1 Ferromagnetic GMR material and method of forming and using 失效
标题翻译：铁磁GMR材料及其形成与使用方法
公开(公告)号：US06177204B1
公开(公告)日：2001-01-23
申请号：US08932400
申请日：1997-09-17
申请人： Eugene Chen , Saied N. Tehrani
发明人： Eugene Chen , Saied N. Tehrani
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/324 , H01L27/222 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12465 , Y10T428/12632 , Y10T428/1275 , Y10T428/12854 , Y10T428/12861 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951
摘要： A multi-layer magnetic material (10) has magnetic vectors (21,22) that point along a length (27) of the material (10). Opposing magnetic fields cause the vectors to snap past the perpendicular position with a rapid change in the resistance of the material. The material is used as a memory cell (37,38,39,41) of a memory (36).
摘要翻译：多层磁性材料（10）具有指向材料（10）的长度（27）的磁性矢量（21,22）。相反的磁场使得矢量随着材料电阻的快速变化而跳过垂直位置。该材料用作存储器（36）的存储单元（37,38,39,41）。

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