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41. 发明授权

US07396430B2 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US07396430B2
公开(公告)日：2008-07-08
申请号：US11395881
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： H01L21/306
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

42. 发明申请

US20090101166A1 APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES 审中-公开
标题翻译：优化图案清洗清洗装置及方法
公开(公告)号：US20090101166A1
公开(公告)日：2009-04-23
申请号：US12250955
申请日：2008-10-14
申请人： John M. de Larios , Erik M. Freer , Michael Ravkin , Jeffery Marks
发明人： John M. de Larios , Erik M. Freer , Michael Ravkin , Jeffery Marks
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , H01L21/67051
摘要： Methods and apparatus for cleaning wafer surfaces are provided, especially for cleaning surfaces of patterned wafers. The cleaning apparatus includes a cleaning head with channels on the surface facing the patterned wafers which has a predominant pattern. Cleaning material flowing the channels exerts a shear force on the surface of a patterned wafer, which is oriented in a specific direction to the cleaning head. The shear force and the specific orientation between the patterned wafer and the cleaning head improve the removal efficiency of the surface contaminants.
摘要翻译：提供了用于清洁晶片表面的方法和装置，特别是用于清洁图案化晶片的表面。清洁装置包括清洁头，其具有在面向图案化晶片的表面上的通道，其具有主要图案。流动通道的清洁材料在图案化晶片的表面上施加剪切力，该图案化晶片的面向清洁头的特定方向。图案化晶片和清洁头之间的剪切力和特定取向提高了表面污染物的去除效率。

43. 发明申请

US20080230097A1 Methods for Processing Wafer Surfaces Using Thin, High Velocity Fluid Layer 有权
标题翻译：使用薄，高速流体层处理晶片表面的方法
公开(公告)号：US20080230097A1
公开(公告)日：2008-09-25
申请号：US12129679
申请日：2008-05-30
申请人： Michael Ravkin , Michael G.R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael G.R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/08 , B05D1/00 , C23F1/00
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

44. 发明申请

US20070000518A1 Method for removing material from semiconductor wafer and apparatus for performing the same 失效
标题翻译：从半导体晶片去除材料的方法及其执行方法
公开(公告)号：US20070000518A1
公开(公告)日：2007-01-04
申请号：US11174080
申请日：2005-06-30
申请人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz Redeker , John Boyd
发明人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz Redeker , John Boyd
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , G03F7/422 , H01L21/02063 , H01L21/02071 , H01L21/6704 , Y10S134/902
摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
摘要翻译：压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

45. 发明申请

US20050090093A1 Stress free etch processing in combination with a dynamic liquid meniscus 有权
标题翻译：与动态液体弯液面相结合的无应力蚀刻处理
公开(公告)号：US20050090093A1
公开(公告)日：2005-04-28
申请号：US10769498
申请日：2004-01-30
申请人： Andrew Bailey , Michael Ravkin , Mikhail Korolik , Puneet Yadav
发明人： Andrew Bailey , Michael Ravkin , Mikhail Korolik , Puneet Yadav
IPC分类号： H01J37/32 , H01L21/00 , H01L21/302 , H01L21/321 , H01L21/3213 , H01L21/44 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/24 , H01L29/40 , H01L33/00
CPC分类号： H01L21/7684 , H01J37/32522 , H01J2237/022 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/6708 , H01L21/67253
摘要： A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.
摘要翻译：用于平坦化和控制图案化半导体衬底上的不均匀性的系统和方法包括接收图案化的半导体衬底。图案化的半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。去除大部分上覆层部分，并且覆盖层部分的剩余部分具有不均匀性。绘制不均匀性，确定最佳溶液，并开发动态液体弯月面蚀刻工艺配方以校正不均匀性。使用动态液体弯月面蚀刻工艺配方的动态液体弯月面蚀刻工艺来校正不均匀性，以使覆盖层部分的剩余部分基本平坦化。

46. 发明授权

US08236382B2 Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same 有权
标题翻译：接近底物制备顺序及其实施方法，装置和系统
公开(公告)号：US08236382B2
公开(公告)日：2012-08-07
申请号：US10882716
申请日：2004-06-30
申请人： Michael Ravkin , John M. de Larios , Mikhail Korolik , Michael G. R. Smith , Carl Woods
发明人： Michael Ravkin , John M. de Larios , Mikhail Korolik , Michael G. R. Smith , Carl Woods
IPC分类号： B05D3/00 , B05D3/10
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： A method for preparing a surface of a substrate is provided. The method includes scanning the surface of the substrate by a meniscus, preparing the surface of the substrate using the meniscus, and performing a next preparation operation on the surface of the substrate that was prepared without performing a rinsing operation.
摘要翻译：提供了制备基板表面的方法。该方法包括通过弯液面扫描基板的表面，使用弯月面准备基板的表面，并且在不执行漂洗操作的情况下对基板的表面进行下一个准备操作。

47. 发明授权

US07078344B2 Stress free etch processing in combination with a dynamic liquid meniscus 有权
标题翻译：与动态液体弯液面相结合的无应力蚀刻处理
公开(公告)号：US07078344B2
公开(公告)日：2006-07-18
申请号：US10769498
申请日：2004-01-30
申请人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
发明人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , H01J37/32522 , H01J2237/022 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/6708 , H01L21/67253
摘要： A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.
摘要翻译：用于平坦化和控制图案化半导体衬底上的不均匀性的系统和方法包括接收图案化的半导体衬底。图案化的半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。去除大部分上覆层部分，并且覆盖层部分的剩余部分具有不均匀性。绘制不均匀性，确定最佳溶液，并开发动态液体弯月面蚀刻工艺配方以校正不均匀性。使用动态液体弯月面蚀刻工艺配方的动态液体弯月面蚀刻工艺来校正不均匀性，以使覆盖层部分的剩余部分基本平坦化。

48. 发明申请

US20060128600A1 Cleaning compound and method and system for using the cleaning compound 有权
标题翻译：清洁剂及使用清洁剂的方法和系统
公开(公告)号：US20060128600A1
公开(公告)日：2006-06-15
申请号：US11347154
申请日：2006-02-03
申请人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
发明人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
IPC分类号： B08B3/02 , C11D3/20
CPC分类号： H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
摘要翻译：提供清洁化合物。清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

49. 发明授权

US06770151B1 Drying a substrate using a combination of substrate processing technologies 失效
标题翻译：使用基板处理技术的组合干燥基板
公开(公告)号：US06770151B1
公开(公告)日：2004-08-03
申请号：US10196497
申请日：2002-07-15
申请人： Michael Ravkin , Katrina Mikhaylichenko , John M. deLarios
发明人： Michael Ravkin , Katrina Mikhaylichenko , John M. deLarios
IPC分类号： B08B704
CPC分类号： H01L21/02052 , H01L21/31111 , H01L21/67028 , H01L21/67034
摘要： Methods for rinsing and drying a substrate are provided. In one example, a method for rinsing and drying a substrate includes providing a substrate for processing and securing the substrate in a hollow spin chuck. The hollow spin chuck with the substrate positioned therein is rotated at a first rate of rotation while a rinsing agent and a surface tension modifying agent are dispensed at a position that is an approximate center of the spinning substrate on both an active surface and a backside surface of the substrate. The dispensing is moved from the approximate center of the spinning substrate radially outward towards a periphery of the substrate. The dispensing is then discontinued, and the hollow spin chuck with the substrate positioned therein is rotated at a second rate of rotation.
摘要翻译：提供漂洗和干燥基材的方法。在一个实例中，用于冲洗和干燥衬底的方法包括提供用于将衬底加工并固定在中空自旋卡盘中的衬底。将位于其中的基板的空心旋转卡盘以第一旋转速度旋转，同时将漂洗剂和表面张力改性剂分配在活性表面和背面上的纺丝基材的大致中心的位置的基底。分配从旋转衬底的大致中心径向向外移动到衬底的周边。然后中止分配，并且其中定位有基底的空心旋转卡盘以第二旋转速度旋转。

50. 发明申请

US20080171292A1 Methods for Providing a Confined Liquid for Immersion Lithography 失效
标题翻译：提供浸没液相色谱液体的方法
公开(公告)号：US20080171292A1
公开(公告)日：2008-07-17
申请号：US12055219
申请日：2008-03-25
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以实现衬底表面的光刻处理。

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