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1. 发明授权

US08236382B2 Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same 有权
标题翻译：接近底物制备顺序及其实施方法，装置和系统
公开(公告)号：US08236382B2
公开(公告)日：2012-08-07
申请号：US10882716
申请日：2004-06-30
申请人： Michael Ravkin , John M. de Larios , Mikhail Korolik , Michael G. R. Smith , Carl Woods
发明人： Michael Ravkin , John M. de Larios , Mikhail Korolik , Michael G. R. Smith , Carl Woods
IPC分类号： B05D3/00 , B05D3/10
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： A method for preparing a surface of a substrate is provided. The method includes scanning the surface of the substrate by a meniscus, preparing the surface of the substrate using the meniscus, and performing a next preparation operation on the surface of the substrate that was prepared without performing a rinsing operation.
摘要翻译：提供了制备基板表面的方法。该方法包括通过弯液面扫描基板的表面，使用弯月面准备基板的表面，并且在不执行漂洗操作的情况下对基板的表面进行下一个准备操作。

2. 发明授权

US07534307B2 Methods for processing wafer surfaces using thin, high velocity fluid layer 有权
标题翻译：使用薄的高速流体层处理晶片表面的方法
公开(公告)号：US07534307B2
公开(公告)日：2009-05-19
申请号：US12129679
申请日：2008-05-30
申请人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B5/04 , B08B3/04
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

3. 发明授权

US07383843B2 Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer 有权
标题翻译：使用薄的高速流体层处理晶片表面的方法和装置
公开(公告)号：US07383843B2
公开(公告)日：2008-06-10
申请号：US10882835
申请日：2004-06-30
申请人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/00 , F26B5/04
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

4. 发明授权

US08522799B2 Apparatus and system for cleaning a substrate 有权
标题翻译：用于清洁衬底的装置和系统
公开(公告)号：US08522799B2
公开(公告)日：2013-09-03
申请号：US11532493
申请日：2006-09-15
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/003 , B08B3/02
摘要： An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.
摘要翻译：公开了一种用于清洁衬底的设备。该装置具有第一头单元和第二头单元。第一头单元定位成接近基底的表面，并且具有限定在构造成向基底的表面提供泡沫的第一排通道。第二头单元被定位成基本上与第一头单元相邻并且靠近衬底的表面。第二和第三行通道被限定在第二头单元内。第二排通道被配置成向衬底的表面提供流体。第三排通道被配置为向基板的表面施加真空。

5. 发明申请

US20120145202A1 Cleaning Compound and Method and System for Using the Cleaning Compound 审中-公开
标题翻译：清洁剂及使用清洁剂的方法和系统
公开(公告)号：US20120145202A1
公开(公告)日：2012-06-14
申请号：US13396047
申请日：2012-02-14
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhay Iichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhay Iichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/04
CPC分类号： H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
摘要翻译：提供清洁化合物。清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

6. 发明授权

US07862662B2 Method and material for cleaning a substrate 有权
标题翻译：清洗基材的方法和材料
公开(公告)号：US07862662B2
公开(公告)日：2011-01-04
申请号：US11532491
申请日：2006-09-15
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/00 , C11D11/0047 , C11D17/0013 , C11D17/0017 , G03F1/82 , H01L21/02057 , H01L21/02096 , H01L21/67051
摘要： Methods for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body.
摘要翻译：公开了使用三态体进行清洁的方法。提供了沉积有颗粒的基板。产生具有固体部分，液体部分和气体部分的三态体。在三态体上施加力以发出固体部分和颗粒之间的相互作用。将三态体与来自衬底表面的颗粒一起去除。固体部分和颗粒之间的相互作用导致颗粒与三态体一起被去除。

7. 发明申请

US20080230097A1 Methods for Processing Wafer Surfaces Using Thin, High Velocity Fluid Layer 有权
标题翻译：使用薄，高速流体层处理晶片表面的方法
公开(公告)号：US20080230097A1
公开(公告)日：2008-09-25
申请号：US12129679
申请日：2008-05-30
申请人： Michael Ravkin , Michael G.R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael G.R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/08 , B05D1/00 , C23F1/00
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

8. 发明申请

US20080148595A1 Method and apparatus for drying substrates using a surface tensions reducing gas 审中-公开
标题翻译：使用表面张力降低气体干燥基材的方法和装置
公开(公告)号：US20080148595A1
公开(公告)日：2008-06-26
申请号：US11643479
申请日：2006-12-20
申请人： John M. de Larios , Paul A. Kittle , Michael Ravkin , Mikhail Korolik , Erik Freer , Katrina Mikhaylich , Fritz C. Redeker
发明人： John M. de Larios , Paul A. Kittle , Michael Ravkin , Mikhail Korolik , Erik Freer , Katrina Mikhaylich , Fritz C. Redeker
IPC分类号： F26B7/00 , F26B21/00
CPC分类号： F26B5/14 , F26B21/14 , H01L21/67034
摘要： A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.
摘要翻译：公开了一种使用邻近头来处理衬底的方法。该方法是通过提供具有靠近基板的表面定位的头表面的头来开始的。头部具有宽度和长度，头部具有沿头部长度配置成行的多个端口。多个行可以在头部的宽度上延伸，并且存在被配置为分配第一流体的第一组端口。将第一流体分配到基材的表面，在基材的表面和头部表面之间形成弯液面。该方法还包括将气态二氧化碳从头部的第二组端口输送到弯月面和基底之间的界面。二氧化碳有助于相对于基底表面促进弯月面上的表面张力降低。

9. 发明授权

US07975708B2 Proximity head with angled vacuum conduit system, apparatus and method 有权
标题翻译：接近头带有倾斜的真空管道系统，设备和方法
公开(公告)号：US07975708B2
公开(公告)日：2011-07-12
申请号：US11731532
申请日：2007-03-30
申请人： Michael Ravkin , John M. de Larios , Fred C. Redeker , Mikhail Korolik , Erik M. Freer
发明人： Michael Ravkin , John M. de Larios , Fred C. Redeker , Mikhail Korolik , Erik M. Freer
IPC分类号： B08B3/00
CPC分类号： H01L21/67051
摘要： A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.
摘要翻译：包括头表面的接近头。头表面包括第一平坦区域和多个第一管道。多个第一导管中的每一个由多个第一离散孔中的对应的一个限定。多个第一离散孔位于头表面并延伸穿过第一平坦区域。头表面还包括第二平坦区域和多个第二管道。多个第二导管由位于头表面中并延伸穿过第二平坦区域的相应多个第二离散孔限定。头表面还包括设置在第一平坦区域和第二平坦区域之间并与之相邻的第三平坦区域和多个第三导管。多个第三导管由位于头表面中并延伸穿过第三平坦区域的对应的多个第三离散孔限定。第三导管相对于第三平坦区域以第一角度形成。第一个角度在30到60度之间。还描述了用于处理具有邻近头的衬底的系统和方法。

10. 发明授权

US07737097B2 Method for removing contamination from a substrate and for making a cleaning solution 有权
标题翻译：用于从衬底去除污染物和制造清洁溶液的方法
公开(公告)号：US07737097B2
公开(公告)日：2010-06-15
申请号：US11346894
申请日：2006-02-03
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D7/50
CPC分类号： H01L21/02052 , B08B7/02 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/42 , H01L21/02057 , H01L21/02096
摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.
摘要翻译：提供了一种用于从衬底去除污染物的方法。该方法包括将具有分散相，连续相和分散在连续相内的颗粒的清洗溶液施加到基材的表面。该方法包括迫使分散在连续相内的颗粒中的一种接近一种表面污染物。强制足以克服颗粒和表面污染物之间的任何排斥力，使得颗粒中的一个和表面污染物之一接合。该方法还包括从基材的表面除去接合的颗粒和表面污染物。还提供了制造清洁材料的方法。

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