专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20140007413A1 PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS AND METHODS THEREOF 有权
标题翻译：等离子体处理系统中的等离子体配合结构及其方法
公开(公告)号：US20140007413A1
公开(公告)日：2014-01-09
申请号：US14022111
申请日：2013-09-09
申请人： Eric Hudson , Andreas Fischer
发明人： Eric Hudson , Andreas Fischer
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/00 , C23F1/00 , H01J37/32082 , H01J37/32623
摘要： A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasmas flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground.
摘要翻译：提供了一种制造等离子体处理系统的方法。该方法包括提供构造成围绕在衬底的处理期间产生的等离子体的可移动等离子体面向结构。该方法还包括将可移动导电结构设置在可移动等离子体面向结构的外部，其中两个结构构造成作为单个单元展开和缩回以便于处理基板。可移动导电结构是在等离子体处理期间接地的射频（RF）。在处理期间，来自等离子体的RF电流在等离子体处理期间通过可移动等离子体面向结构流动到可移动导电结构。该方法还包括将一组导电带耦合到可移动导电结构。一组导电带在展开和缩回时容纳可移动的导电结构，同时为RF电流提供一个低阻抗地线路径。

42. 发明申请

US20130122711A1 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：US20130122711A1
公开(公告)日：2013-05-16
申请号：US13294053
申请日：2011-11-10
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

43. 发明申请

US20130119020A1 System, Method and Apparatus of a Wedge-Shaped Parallel Plate Plasma Reactor for Substrate Processing 有权
标题翻译：用于基板加工的楔形平行板等离子体反应器的系统，方法和装置
公开(公告)号：US20130119020A1
公开(公告)日：2013-05-16
申请号：US13308989
申请日：2011-12-01
申请人： Eric Hudson
发明人： Eric Hudson
IPC分类号： H05H1/48 , C23F1/00 , C23F1/08
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/32623 , H01J37/32651
摘要： A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate. The plasma containment structure rotates relative to the substrate and wherein the plasma containment region includes a center point of the substrate throughout the rotation of the plasma containment structure relative to the substrate. The plasma containment structure includes multiple gaps. A vacuum source is coupled to the gaps in the plasma containment structure. A method of processing a substrate is also described.
摘要翻译：等离子体处理室包括顶电极，与顶电极相对设置的底电极，能够支撑衬底的底电极。等离子体处理室还包括限定等离子体容纳区域的等离子体容纳结构，等离子体容纳区域小于衬底的整个表面。等离子体容纳结构相对于衬底旋转，并且其中等离子体容纳区域包括在等离子体容纳结构相对于衬底的旋转期间衬底的中心点。等离子体容纳结构包括多个间隙。真空源耦合到等离子体容纳结构中的间隙。还描述了处理衬底的方法。

44. 发明申请

US20130023064A1 Negative Ion Control for Dielectric Etch 有权
标题翻译：介质蚀刻负离子控制
公开(公告)号：US20130023064A1
公开(公告)日：2013-01-24
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

45. 发明授权

US07994794B2 Methods for measuring a set of electrical characteristics in a plasma 有权
标题翻译：用于测量等离子体中的一组电特性的方法
公开(公告)号：US07994794B2
公开(公告)日：2011-08-09
申请号：US12786405
申请日：2010-05-24
申请人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
IPC分类号： G01N27/26 , H05B31/26
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.
摘要翻译：使用构造成测量等离子体中的一组电特性的探针装置的方法包括提供包括至少一组被配置为暴露于等离子体的等离子体室表面的室壁，所述等离子体具有一组电特性。该方法包括安装被配置为暴露于等离子体的收集盘结构，其中所述收集盘结构具有至少一个设置在所述室壁内的主体和与所述集合中的至少一个共面或凹入的收集盘结构表面的等离子体室表面，并且提供导电路径，其被配置为将所述一组电特性从所述收集盘结构传输到一组换能器。该方法可以包括将热接地元件与导电路径耦合，以便至少提供导电路径的热接地，并且可替代地或另外地包括设置绝缘屏障，该隔离屏障构造成基本上电分离收集盘和导电路径中的至少一个。

46. 发明申请

US20110059615A1 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 有权
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：US20110059615A1
公开(公告)日：2011-03-10
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

47. 发明授权

US07892445B1 Wafer electrical discharge control using argon free dechucking gas 有权
标题翻译：使用无氩脱胶气体进行晶圆放电控制
公开(公告)号：US07892445B1
公开(公告)日：2011-02-22
申请号：US11853968
申请日：2007-09-12
申请人： David Wei , Howard Dang , Masahiro Watanabe , Sean Kang , Kenji Takeshita , Mayumi Block , Stephen Sirard , Eric Hudson
发明人： David Wei , Howard Dang , Masahiro Watanabe , Sean Kang , Kenji Takeshita , Mayumi Block , Stephen Sirard , Eric Hudson
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.
摘要翻译：提供了通过在等离子体室中的静电电荷将具有低k电介质层的晶片脱扣保持在静电卡盘上的方法。静电钳位电压被去除。在等离子体室中提供基本上无氩的脱扣气体。从等离子体室中的脱扣气体形成脱扣等离子体。脱扣等离子体停止。

48. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

49. 发明授权

US07829468B2 Method and apparatus to detect fault conditions of plasma processing reactor 有权
标题翻译：检测等离子体处理反应堆故障状况的方法和装置
公开(公告)号：US07829468B2
公开(公告)日：2010-11-09
申请号：US11447946
申请日：2006-06-07
申请人： Douglas Keil , Eric Hudson , Chris Kimball , Andreas Fischer
发明人： Douglas Keil , Eric Hudson , Chris Kimball , Andreas Fischer
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/52 , C23C16/509 , H01J37/32935 , H01J37/3299
摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed to reveal a specific fault. The PIF probe is preferably positioned at a grounded surface within the reactor. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement.
摘要翻译：提供了一种用于等离子体处理室的故障检测方法。该方法包括使用单个平面离子通量（PIF）探针监测等离子体室内的等离子体参数，分析所得信息，测量作为时间的函数的等离子体参数并分析所得数据。数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 PIF探针优选地位于反应器内的接地表面上。可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。

50. 发明授权

US07479207B2 Adjustable height PIF probe 失效
标题翻译：可调高度PIF探头
公开(公告)号：US07479207B2
公开(公告)日：2009-01-20
申请号：US11377074
申请日：2006-03-15
申请人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
IPC分类号： C23F1/02
CPC分类号： H01J37/32935
摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.
摘要翻译：提供了一种用于等离子体处理室的等离子体探针组件。提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。电连接器电连接到半导体探针元件。电绝缘套管围绕探头元件的至少一部分。调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式