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41. 发明申请

US20050001223A1 Electroluminescent body 有权
标题翻译：电致发光体
公开(公告)号：US20050001223A1
公开(公告)日：2005-01-06
申请号：US10488487
申请日：2002-08-30
申请人： Norbert Linder , Ernst Nirschl , Werner Spath
发明人： Norbert Linder , Ernst Nirschl , Werner Spath
IPC分类号： H01L27/15 , H01L33/08 , H01L33/20 , H01L33/46 , H01L33/00 , H01L31/12
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/46
摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).
摘要翻译：电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。电致发光部件（1）具有基板（2）。在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。和每个辐射去耦元件（4）上的接触元件（9）。尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过辐射去耦元件（4）的侧面区域（12）。

42. 发明授权

US08592236B2 Method for manufacture of optically pumped, surface-emitting semiconductor laser device 有权
标题翻译：光泵浦表面发射半导体激光器件的制造方法
公开(公告)号：US08592236B2
公开(公告)日：2013-11-26
申请号：US11986909
申请日：2007-11-27
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
摘要翻译：一种用于制造光泵浦表面发射半导体激光器件的方法，其中将具有量子限制结构的表面发射半导体激光器层序列施加到公共衬底上。除去期望的激光区域外的表面发射半导体激光层序列并暴露区域。将边缘发射半导体层序列施加在公共衬底上的暴露区域上，其中通过去除步骤暴露暴露区域，并且暴露区域适于将泵浦辐射传输到量子限制结构中。然后在边缘发射半导体层序列中形成电流注入路径。

43. 发明授权

US08299484B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08299484B2
公开(公告)日：2012-10-30
申请号：US12666557
申请日：2008-06-23
申请人： Stefan Grötsch , Norbert Linder
发明人： Stefan Grötsch , Norbert Linder
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113 , H01L31/06
CPC分类号： H01L33/46 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014
摘要： An optoelectronic semiconductor chip including a radiation passage area, where a contact metallization is applied to the radiation passage area, and a first reflective layer sequence is applied to that surface of the contact metallization which is remote from the radiation passage area, and an optoelectronic component that includes such a chip.
摘要翻译：包括辐射通道区域的光电子半导体芯片，其中接触金属化被施加到辐射通道区域，并且第一反射层序列被施加到远离辐射通道区域的接触金属化的表面，以及光电子部件包括这样一个芯片。

44. 发明授权

US07970036B2 Organic semiconductor laser and method for producing it 有权
标题翻译：有机半导体激光器及其制造方法
公开(公告)号：US07970036B2
公开(公告)日：2011-06-28
申请号：US12011437
申请日：2008-01-25
申请人： Norbert Linder , Martin Reufer
发明人： Norbert Linder , Martin Reufer
IPC分类号： H01S5/00
CPC分类号： H01S3/168 , H01S3/0635 , H01S3/0933
摘要： An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (1), and also the method for producing said laser.
摘要翻译：与电气可操作的无机LED（1）一体制造的有机半导体激光器以及用于制造所述激光器的方法。

45. 发明申请

US20110019411A1 Optoelectronic Module and Projection Apparatus Comprising the Optoelectronic Module 有权
标题翻译：包含光电模块的光电子模块和投影设备
公开(公告)号：US20110019411A1
公开(公告)日：2011-01-27
申请号：US12863717
申请日：2009-01-26
申请人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
发明人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
IPC分类号： F21V9/00
CPC分类号： H04N9/3164 , F21K9/00 , H01L25/0753 , H01L33/44 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.
摘要翻译：规定用于发出可见波长范围的单色辐射的光电子模块。该模块具有产生紫外线辐射的多个发光二极管芯片。通过波长转换器将紫外线辐射转换成可见光范围内的光，例如绿光。通过使用两个选择性反射和发射滤波器来优化来自模块的光耦合。该模块可以用作投影设备中的光源。

46. 发明申请

US20090261366A1 OPTOELECTRONIC COMPONENT 有权
标题翻译：光电组件
公开(公告)号：US20090261366A1
公开(公告)日：2009-10-22
申请号：US12088250
申请日：2006-09-27
申请人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
发明人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.
摘要翻译：公开了一种具有半导体本体的包括有源半导体层序列的光电子部件，其适于产生从半导体本体的正面发射的第一波长的电磁辐射。该元件还包括在其发射方向上跟随半导体本体的第一波长转换物质，其将第一波长的辐射转换成不同于第一波长的第二波长的辐射，以及在有源半导体层序列之间的第一选择性反射层以及选择性地反射第二波长的辐射并对第一波长的辐射透明的第一波长转换物质。

47. 发明授权

US07522646B2 Vertically emitting optically pumped diode laser with external resonator 有权
标题翻译：用外部谐振器垂直发射光泵浦二极管激光器
公开(公告)号：US07522646B2
公开(公告)日：2009-04-21
申请号：US10745378
申请日：2003-12-22
申请人： Peter Brick , Stephan Lutgen , Norbert Linder
发明人： Peter Brick , Stephan Lutgen , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S5/028 , H01S5/041 , H01S5/141
摘要： A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for irradiating into the active zone at an incidence angle αp pumping radiation (10) of wavelength λp. The wavelength λp and the incidence angle αp of the pumping radiation are selected in such a way that the absorption of the pumping radiation takes place substantially inside the quantum wells. This avoids the losses during the capture of charge carriers from the barrier layers into the quantum wells that occur in the case of optically pumped semiconductor lasers where the pumping radiation is absorbed in the barrier layers. Also specified are advantageous refinements of the semiconductor body and combinations for incidence angle and wavelength of the pumping radiation source that permit a particularly effective optical pumping process of the quantum wells.
摘要翻译：一种具有外部谐振器的垂直发射半导体激光器，其中量子阱结构（4）位于其中的量子阱（6）和位于其间的阻挡层（5）的有源区的半导体本体（1）和至少一个泵浦辐射源（9），用于以波长兰波特的入射角alphap泵浦辐射（10）照射到有源区域中。泵浦辐射的波长羔羊和入射角alphap以这样的方式选择，使得泵浦辐射的吸收基本上在量子阱内部发生。这避免了在从泵浦辐射被吸收在阻挡层中的光泵浦半导体激光器的情况下，从阻挡层捕获到电荷载流子到量子阱期间的损耗。还规定了半导体主体的有利改进以及允许量子阱的特别有效的光泵浦过程的泵浦辐射源的入射角和波长的组合。

48. 发明授权

US07042013B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07042013B2
公开(公告)日：2006-05-09
申请号：US10647000
申请日：2003-08-22
申请人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
发明人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L33/30 , H01L33/04
摘要： A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.
摘要翻译：一种具有包含n掺杂包层（18），p掺杂包层（20）和基于InGaAlP的有源层（14）的层结构的辐射发射半导体部件，其布置在n掺杂包层（18）和p掺杂包层（20）。扩散阻挡层（16）布置在有源层（14）和p掺杂覆层（20）之间。扩散停止层（16）由应变超晶格形成。

49. 发明申请

US20060039437A1 Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权
公开(公告)号：US20060039437A1
公开(公告)日：2006-02-23
申请号：US11249094
申请日：2005-10-12
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S3/091 , H01S3/092
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

50. 发明申请

US20050259700A1 Optically pumpable surface-emitting semiconductor laser device 审中-公开
标题翻译：光泵浦表面发射半导体激光器件
公开(公告)号：US20050259700A1
公开(公告)日：2005-11-24
申请号：US11188203
申请日：2005-07-22
申请人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
发明人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S3/10
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.
摘要翻译：在具有具有辐射发生有源层的垂直发射器的可光学泵浦的表面发射半导体激光器件中，提供用于调制表面发射半导体器件的输出功率的至少一个调制辐射源。调制辐射源由具有有源层的边缘发射半导体结构形成，并且其被设置为使得在操作期间辐射到垂直发射极的辐射生成有源层。这产生了高功率和高光束质量的容易调制的表面发射激光源。优选地，在半导体激光器件中设置用于光学泵浦垂直发射极的有源层的泵浦辐射源。

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