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1. 发明授权

US08354682B2 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US08354682B2
公开(公告)日：2013-01-15
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

2. 发明申请

US20100295073A1 Optoelectronic Semiconductor Chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US20100295073A1
公开(公告)日：2010-11-25
申请号：US12666557
申请日：2008-06-23
申请人： Stefan Grötsch , Norbert Linder
发明人： Stefan Grötsch , Norbert Linder
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014
摘要： An optoelectronic semiconductor chip (1) comprises a radiation passage area (3), a contact metallization (2a) applied to the radiation passage area (3), and a first reflective layer sequence (2b) applied to that surface of the contact metallization (2a) which is remote from the radiation passage area (3). An optoelectronic component comprising such a chip is also specified.
摘要翻译：光电子半导体芯片（1）包括辐射通道区域（3），施加到辐射通道区域（3）的接触金属化（2a）和应用于接触金属化表面的第一反射层序列（2b） 2a），其远离辐射通道区域（3）。还规定了包括这种芯片的光电子部件。

3. 发明授权

US08585246B2 Optoelectronic module and projection apparatus comprising the optoelectronic module 有权
标题翻译：包括光电子模块的光电模块和投影装置
公开(公告)号：US08585246B2
公开(公告)日：2013-11-19
申请号：US12863717
申请日：2009-01-26
申请人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
发明人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
IPC分类号： F21V9/06 , F21V9/16
CPC分类号： H04N9/3164 , F21K9/00 , H01L25/0753 , H01L33/44 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.
摘要翻译：规定用于发出可见波长范围的单色辐射的光电子模块。该模块具有产生紫外线辐射的多个发光二极管芯片。通过波长转换器将紫外线辐射转换成可见光范围内的光，例如绿光。通过使用两个选择性反射和发射滤波器来优化来自模块的光耦合。该模块可以用作投影设备中的光源。

4. 发明授权

US08299484B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08299484B2
公开(公告)日：2012-10-30
申请号：US12666557
申请日：2008-06-23
申请人： Stefan Grötsch , Norbert Linder
发明人： Stefan Grötsch , Norbert Linder
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113 , H01L31/06
CPC分类号： H01L33/46 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014
摘要： An optoelectronic semiconductor chip including a radiation passage area, where a contact metallization is applied to the radiation passage area, and a first reflective layer sequence is applied to that surface of the contact metallization which is remote from the radiation passage area, and an optoelectronic component that includes such a chip.
摘要翻译：包括辐射通道区域的光电子半导体芯片，其中接触金属化被施加到辐射通道区域，并且第一反射层序列被施加到远离辐射通道区域的接触金属化的表面，以及光电子部件包括这样一个芯片。

5. 发明申请

US20110019411A1 Optoelectronic Module and Projection Apparatus Comprising the Optoelectronic Module 有权
标题翻译：包含光电模块的光电子模块和投影设备
公开(公告)号：US20110019411A1
公开(公告)日：2011-01-27
申请号：US12863717
申请日：2009-01-26
申请人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
发明人： Kirstin Petersen , Stefan Grötsch , Stephan Miller , Günter Spath , Norbert Linder , Dominik Eisert , Matthias Peter
IPC分类号： F21V9/00
CPC分类号： H04N9/3164 , F21K9/00 , H01L25/0753 , H01L33/44 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.
摘要翻译：规定用于发出可见波长范围的单色辐射的光电子模块。该模块具有产生紫外线辐射的多个发光二极管芯片。通过波长转换器将紫外线辐射转换成可见光范围内的光，例如绿光。通过使用两个选择性反射和发射滤波器来优化来自模块的光耦合。该模块可以用作投影设备中的光源。

6. 发明申请

US20110297982A1 Optoelectronic Semiconductor Chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20110297982A1
公开(公告)日：2011-12-08
申请号：US13061514
申请日：2009-07-23
申请人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
发明人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
IPC分类号： H01L33/60
CPC分类号： H01L33/22 , H01L33/405 , H01L33/46
摘要： A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.
摘要翻译：规定了半导体芯片，其包括设置用于发射电磁辐射的有源层和在半导体芯片的主发射方向上设置在有源层下游的结构单元的二维排列。结构单元布置在任意统计分布中。这种结构单元的布置使得可以实现具有定向发射特性的半导体芯片。

7. 发明授权

US07629670B2 Radiation-emitting semi-conductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07629670B2
公开(公告)日：2009-12-08
申请号：US10561318
申请日：2004-06-25
申请人： Rainer Butendeich , Norbert Linder , Bernd Mayer , Ines Pietzonka
发明人： Rainer Butendeich , Norbert Linder , Bernd Mayer , Ines Pietzonka
IPC分类号： H01S5/323
CPC分类号： H01L33/025 , H01L33/02 , H01S5/3086
摘要： In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.
摘要翻译：在具有包括n掺杂约束层，p掺杂约束层和设置在n掺杂约束层和p掺杂约束层之间的有源光子发射层的层结构的发射辐射的半导体部件中，根据本发明提供了n掺杂约束层掺杂有用于产生高有源掺杂和尖锐掺杂分布的第一n掺杂剂（或两个相互不同的n掺杂剂），并且仅有源层掺杂与第一掺杂剂不同的第二n-掺杂剂，用于改善有源层的层质量。

8. 发明申请

US20090029496A1 RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US20090029496A1
公开(公告)日：2009-01-29
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/02
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

9. 发明申请

US20080080582A1 Optically Pumped Semiconductor Device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US20080080582A1
公开(公告)日：2008-04-03
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/183 , H01S5/026
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

10. 发明申请

US20080035944A1 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US20080035944A1
公开(公告)日：2008-02-14
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

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