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41. 发明授权

US06586886B1 Gas distribution plate electrode for a plasma reactor 有权
标题翻译：用于等离子体反应器的气体分布板电极
公开(公告)号：US06586886B1
公开(公告)日：2003-07-01
申请号：US10027732
申请日：2001-12-19
申请人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
发明人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
IPC分类号： H01J724
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

42. 发明授权

US5436412A Interconnect structure having improved metallization 失效
标题翻译：互连结构具有改进的金属化
公开(公告)号：US5436412A
公开(公告)日：1995-07-25
申请号：US102027
申请日：1993-08-03
申请人： Umar M. U. Ahmad , Ananda H. Kumar , Eric D. Perfecto , Chandrika Prasad , Sampath Purushothaman , Sudipta K. Ray
发明人： Umar M. U. Ahmad , Ananda H. Kumar , Eric D. Perfecto , Chandrika Prasad , Sampath Purushothaman , Sudipta K. Ray
IPC分类号： H01L23/12 , H01L23/32 , H01L23/498 , H01L23/538 , H05K1/03 , H05K1/11 , H05K3/00 , H05K3/40 , H05K3/46 , H05K1/02
CPC分类号： H05K1/113 , H01L23/49816 , H01L23/49866 , H01L23/5383 , H01L2224/48463 , H01L24/48 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H05K1/0306 , H05K2201/0154 , H05K2201/0195 , H05K2201/09563 , H05K2201/096 , H05K2201/0979 , H05K3/0041 , H05K3/4076 , H05K3/4605 , H05K3/467
摘要： An electrical interconnect structure for connecting a substrate to the next level of packaging or to a semiconductor device. The interconnect structure includes at least two layers of polymeric material, one of the layers having a capture pad and the second of the layers having a bonding pad electrically connected to the capture pad. The bonding pad and the second layer of polymeric material are at the same height so that the bonding pad is level with the second layer of polymeric material. Finally, there is a cap of electrically conducting metallization on the bonding pad and extending beyond the second layer of polymeric material. The cap is of a different composition than the bonding pad.
摘要翻译：一种用于将衬底连接到下一级封装或半导体器件的电互连结构。所述互连结构包括至少两层聚合材料，所述层中的一个具有捕获垫，并且所述层中的第二层具有电连接到所述捕获垫的接合焊盘。接合焊盘和第二层聚合物材料处于相同的高度，使得焊盘与第二层聚合物材料平齐。最后，在焊盘上存在导电金属化的帽，并延伸超过第二层聚合物材料。盖子具有与接合垫不同的成分。

43. 发明授权

US5266446A Method of making a multilayer thin film structure 失效
标题翻译：制造多层薄膜结构的方法
公开(公告)号：US5266446A
公开(公告)日：1993-11-30
申请号：US890331
申请日：1992-05-26
申请人： Kenneth Chang , George Czornyj , Mukta S. Farooq , Ananda H. Kumar , Marvin S. Pitler , Heinz O. Steimel
发明人： Kenneth Chang , George Czornyj , Mukta S. Farooq , Ananda H. Kumar , Marvin S. Pitler , Heinz O. Steimel
IPC分类号： H01L21/48 , H01L21/768 , H05K3/00 , H05K3/18 , H05K3/38 , H05K3/46 , G03C5/00 , H01L21/283
CPC分类号： H01L21/76808 , H01L21/481 , H01L21/4857 , H01L21/76807 , H05K3/465 , H05K3/467 , H01L2221/1031 , H01L2221/1036 , H05K2201/0154 , H05K2201/0376 , H05K2201/09563 , H05K2203/072 , H05K2203/107 , H05K3/0023 , H05K3/0041 , H05K3/184 , H05K3/388 , H05K3/4661
摘要： A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of:a. forming a multilayer thin film structure including the steps of:applying a first layer of dielectric polymeric material on the surface of a dielectric substrate,applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein the second polymeric material is photosensitive,imagewise exposing and developing the second polymeric material to form a feature therein, the second layer feature in communication with at least one feature formed in the first polymeric material; andb. filling the features in the entire multilayer structure simultaneously with conductive material.Preferably, the first layer feature is a via and the second layer feature is a capture pad or wiring channel. Also disclosed is a multilayer thin film structure made by this method.
摘要翻译：一种在电介质基片的表面上形成多层薄膜结构的方法，包括以下步骤：a。形成多层薄膜结构，其包括以下步骤：将第一层电介质聚合材料施加在电介质基底的表面上，在第一聚合物材料层上施加第二层电介质聚合材料，其中第二聚合物材料是光敏的，成像曝光和显影第二聚合物材料以在其中形成特征，第二层特征与形成在第一聚合物材料中的至少一个特征连通; 和b。与导电材料同时填充整个多层结构中的特征。优选地，第一层特征是通孔，第二层特征是捕获垫或布线通道。还公开了通过该方法制造的多层薄膜结构。

44. 发明授权

US4627160A Method for removal of carbonaceous residues from ceramic structures having internal metallurgy 失效
标题翻译：从具有内部冶金的陶瓷结构中去除碳质残渣的方法
公开(公告)号：US4627160A
公开(公告)日：1986-12-09
申请号：US761713
申请日：1985-08-02
申请人： Lester W. Herron , Ananda H. Kumar , Raj N. Master , Robert W. Nufer
发明人： Lester W. Herron , Ananda H. Kumar , Raj N. Master , Robert W. Nufer
IPC分类号： C03C8/16 , B01J23/00 , B01J31/00 , C03C10/08 , C03C10/12 , C04B35/638 , C04B35/64 , H01L21/48 , H05K1/03 , H05K3/46
CPC分类号： H01L21/4857 , C04B35/638 , C04B35/64 , H01L21/4807 , H05K1/0306 , Y10T29/49126 , Y10T29/49163 , Y10T29/49165
摘要： A process for removing organic materials from an article formed from a slurry of glass and/or ceramic particles, resin binder, and a solvent for the resin binder, the process involving including in the slurry a particulate catalyst selected from the group consisting of Cu, Cu.sub.2 O, CuO, Cu.sub.2 SO.sub.4, CuCl.sub.2, Cu organometallic compounds, and mixtures thereof, the catalyst promoting a rapid and complete removal from the shaped article when heated of the organic materials of the slurry.
摘要翻译：一种从由玻璃和/或陶瓷颗粒，树脂粘合剂和树脂粘合剂的溶剂形成的制品中除去有机材料的方法，该方法包括在浆料中包含选自Cu， Cu 2 O，CuO，Cu 2 SO 4，CuCl 2，Cu有机金属化合物及其混合物，催化剂在浆料的有机材料加热时促进快速且完全地从成型制品中除去。

45. 发明授权

US4442137A Maskless coating of metallurgical features of a dielectric substrate 失效
标题翻译：介电基片的冶金特征的无掩模涂层
公开(公告)号：US4442137A
公开(公告)日：1984-04-10
申请号：US359444
申请日：1982-03-18
申请人： Ananda H. Kumar
发明人： Ananda H. Kumar
IPC分类号： H01L23/12 , H01L21/48 , H01L23/498 , H05K1/09 , H05K3/04 , H05K3/14 , H05K3/24 , B05D3/12 , B05D5/12
CPC分类号： H01L23/49866 , H01L21/4846 , H05K3/246 , H01L2924/0002 , H01L2924/09701 , H05K2203/1105 , H05K3/04 , H05K3/143 , H05K3/244
摘要： Maskless technique for plating a protective metal layer on existing metallurgical pattern supported on a dielectric substrate by blanket coating said metal layer over said substrate, heating to diffuse the metal into said pattern, cooling to spall the metal on the non-patterned portions of the substrate surfaces by the stresses induced from the differences in the thermal contraction differentials between the metal and the substrate, and mechanically removing the metal layer from the non-patterned substrate surfaces. Optionally, the metal layer can also be blanket coated with a passivating metal film with interdiffusion between them at their interface during the noted heating step. In application to support carriers for mounting of semiconductor devices, the substrate will comprise an alumina based ceramic, the pattern will comprise a molybdenum based metal, and the protective metal layer can comprise a nickel based metal. In this application, the second passivating metal film can comprise gold.
摘要翻译：通过将所述金属层通过在所述衬底上方覆盖所述金属层，加热以将所述金属扩散到所述图案中，冷却以将所述金属分散在所述衬底的非图案化部分上，从而在保护金属层上电镀保护金属层由金属和衬底之间的热收缩差异的差异引起的应力表面，以及从未图案化的衬底表面机械地去除金属层。任选地，金属层也可以用钝化金属膜进行覆盖，钝化金属膜在所述加热步骤期间在它们的界面处在它们之间相互扩散。在用于支撑用于安装半导体器件的载体的应用中，基底将包括氧化铝基陶瓷，该图案将包括钼基金属，并且保护金属层可以包括镍基金属。在本申请中，第二钝化金属膜可以包含金。

46. 发明申请

US20180166326A1 STRUCTURE AND METHOD FOR HIGH PERFORMANCE LARGE-GRAIN-POLY SILICON BACKPLANE FOR OLED APPLICATIONS 审中-公开
公开(公告)号：US20180166326A1
公开(公告)日：2018-06-14
申请号：US15883080
申请日：2018-01-29
申请人： Ananda H. Kumar , Srinivas H. Kumar , Tue Nguyen
发明人： Ananda H. Kumar , Srinivas H. Kumar , Tue Nguyen
IPC分类号： H01L21/762 , H01L27/12 , H01L29/04
CPC分类号： H01L21/76254 , H01L21/762 , H01L27/1218 , H01L27/1222 , H01L29/04 , H01L29/66757 , H01L29/66772 , H01L2221/68363
摘要： Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection.

47. 发明授权

US09881800B2 Structure and method for high performance large-grain-poly silicon backplane for OLED applications 有权
公开(公告)号：US09881800B2
公开(公告)日：2018-01-30
申请号：US15368524
申请日：2016-12-02
申请人： Ananda H. Kumar , Srinivas H. Kumar , Tue Nguyen
发明人： Ananda H. Kumar , Srinivas H. Kumar , Tue Nguyen
IPC分类号： H01L21/00 , H01L21/306 , H01L21/265 , H01L21/266
CPC分类号： H01L21/30604 , H01L21/2007 , H01L21/26506 , H01L21/266
摘要： Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection.

48. 发明授权

US09244101B2 Electrochemical fabrication process for forming multilayer multimaterial microprobe structures 有权
公开(公告)号：US09244101B2
公开(公告)日：2016-01-26
申请号：US12431680
申请日：2009-04-28
申请人： Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
发明人： Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
IPC分类号： C25D5/02 , C25D5/48 , C23C28/02 , G01R3/00 , G01R1/067 , H01L21/48 , C25D1/00 , C23C18/16
CPC分类号： G01R3/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , C25D5/02 , C25D5/10 , G01R1/06716 , G01R1/06744 , G01R1/06755 , H01L21/4853
摘要： Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that completely coats the surface of each layer from which the probe is formed including interlayer regions. These first two groups of embodiments incorporate both the core material and the coating material during the formation of each layer. Still other embodiments are directed to the electrochemical fabrication of microprobe arrays that are partially encapsulated by a dielectric material during a post layer formation coating process. In even further embodiments, the electrochemical fabrication of microprobes from two or more materials may occur by incorporating a coating material around each layer of the structure without locating the coating material in inter-layer regions.

49. 发明申请

US20150368820A9 Electrochemical Fabrication Process for Forming Multilayer Multimaterial Microprobe Structures 有权
公开(公告)号：US20150368820A9
公开(公告)日：2015-12-24
申请号：US12431680
申请日：2009-04-28
申请人： Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
发明人： Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard , Dennis R. Smalley
IPC分类号： C25D5/02 , C25D5/10 , B32B38/10
CPC分类号： G01R3/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , C25D5/02 , C25D5/10 , G01R1/06716 , G01R1/06744 , G01R1/06755 , H01L21/4853
摘要： Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that completely coats the surface of each layer from which the probe is formed including interlayer regions. These first two groups of embodiments incorporate both the core material and the coating material during the formation of each layer. Still other embodiments are directed to the electrochemical fabrication of microprobe arrays that are partially encapsulated by a dielectric material during a post layer formation coating process. In even further embodiments, the electrochemical fabrication of microprobes from two or more materials may occur by incorporating a coating material around each layer of the structure without locating the coating material in inter-layer regions.

50. 发明授权

US08663869B2 Crack free SOFC electrolyte 有权
标题翻译：无裂纹SOFC电解液
公开(公告)号：US08663869B2
公开(公告)日：2014-03-04
申请号：US12659742
申请日：2010-03-19
申请人： Martin Janousek , Tad Armstrong , Dien Nguyen , Ananda H. Kumar
发明人： Martin Janousek , Tad Armstrong , Dien Nguyen , Ananda H. Kumar
IPC分类号： H01M8/02 , H01M8/10 , H01M2/14
CPC分类号： H01M8/0202 , H01M4/8621 , H01M4/9033 , H01M8/0271 , H01M8/0625 , H01M8/0637 , Y02E60/566
摘要： A solid oxide fuel cell (SOFC) stack includes a plurality of SOFCs, and a plurality of interconnects, each interconnect containing a conductive perovskite layer on an air side of the interconnect. The stack in internally manifolded for fuel and the conductive perovskite layer on each interconnect is not exposed in the fuel inlet riser. The SOFC electrolyte has a smaller roughness in regions adjacent to the fuel inlet and fuel outlet openings in the electrolyte than under the cathode or anode electrodes.
摘要翻译：固体氧化物燃料电池（SOFC）堆叠包括多个SOFC和多个互连，每个互连在互连的空气侧包含导电的钙钛矿层。在内部歧管的用于燃料的叠层和每个互连上的导电钙钛矿层不会暴露在燃料入口立管中。在阴极或阳极电极下，SOFC电解质在邻近燃料入口和电解液燃料出口的区域具有较小的粗糙度。

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