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    • 48. 发明授权
    • Method to fabricate aligned dual damascene openings
    • 制造对准双镶嵌开口的方法
    • US06967156B2
    • 2005-11-22
    • US10690998
    • 2003-10-22
    • Yeow Kheng LimWuping LiuTae Jong LeeBei Chao ZhangJuan Boon TanAlan CuthbertsonChin Chuan Neo
    • Yeow Kheng LimWuping LiuTae Jong LeeBei Chao ZhangJuan Boon TanAlan CuthbertsonChin Chuan Neo
    • H01L21/4763H01L21/768H01L29/06
    • H01L21/76807H01L21/76829H01L21/76834
    • A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. Simultaneously patterning the patterned middle dielectric material layer using the patterned upper dielectric layer as a mask to form an inchoate upper trench opening; and the lower dielectric material layer using the patterned mask layer and the patterned middle etch stop layer as masks to form an inchoate lower via opening aligned with the inchoate upper trench opening.
    • 一种形成对准的双镶嵌开口的方法,包括以下顺序步骤。 在金属结构上形成层叠。 层叠层按升序包括底蚀刻停止层; 下介电材料层; 中间蚀刻停止层; 中间介电材料层; 和上介电层。 图案化的掩模层形成在图案化的上介电层上,留下图案化的上介电层的暴露的相对部分。 使用图案化掩模层和上介电层的暴露部分作为掩模,将中介电材料层图案化以形成开口。 使用图案化的上电介质层作为掩模,同时对图案化的中间介电材料层进行图案化以形成初始上沟槽开口; 并且使用图案化掩模层和图案化的中间蚀刻停止层作为掩模的下部电介质材料层形成与前述上部沟槽开口对准的开口下部通孔。