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1. 发明申请

US20100019349A1 METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR 有权
标题翻译：用于制造高Q MIM电容器的导电板的方法
公开(公告)号：US20100019349A1
公开(公告)日：2010-01-28
申请号：US12569750
申请日：2009-09-29
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L29/92
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

2. 发明授权

US07601604B2 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US07601604B2
公开(公告)日：2009-10-13
申请号：US11549052
申请日：2006-10-12
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/4763
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

3. 发明申请

US20080057658A1 METHOD FOR FABRICATING A THICK COPPER LINE AND COPPER INDUCTOR RESULTING THEREFROM 有权
标题翻译：用于制造厚铜线和铜电解质的方法
公开(公告)号：US20080057658A1
公开(公告)日：2008-03-06
申请号：US11470552
申请日：2006-09-06
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/20
CPC分类号： H01L21/76885 , H01L21/76834 , H01L23/5227 , H01L23/53238 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.
摘要翻译：公开了一种在衬底上形成一个或多个电感器的方法。该方法包括在衬底上形成第一介电材料，在第一介电材料中形成沟槽，并用铜基本上填充沟槽以形成一个或多个电感器。去除第一电介质材料，并在铜上形成第二电介质材料。第二电介质材料从铜的最上部去除，因此在铜的侧壁上留下一部分第二电介质材料。

4. 发明申请

US20080089007A1 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US20080089007A1
公开(公告)日：2008-04-17
申请号：US11549052
申请日：2006-10-12
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01G4/008 , H01L21/64
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

5. 发明授权

US08022548B2 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US08022548B2
公开(公告)日：2011-09-20
申请号：US12569750
申请日：2009-09-29
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/00
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

6. 发明授权

US07776705B2 Method for fabricating a thick copper line and copper inductor resulting therefrom 有权
标题翻译：用于制造由其产生的粗铜线和铜电感器的方法
公开(公告)号：US07776705B2
公开(公告)日：2010-08-17
申请号：US11470552
申请日：2006-09-06
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/20
CPC分类号： H01L21/76885 , H01L21/76834 , H01L23/5227 , H01L23/53238 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.
摘要翻译：公开了一种在衬底上形成一个或多个电感器的方法。该方法包括在衬底上形成第一介电材料，在第一介电材料中形成沟槽，并用铜基本上填充沟槽以形成一个或多个电感器。去除第一电介质材料，并在铜上形成第二电介质材料。第二电介质材料从铜的最上部去除，因此在铜的侧壁上留下一部分第二电介质材料。

7. 发明授权

US08414971B2 Zinc oxide film and method for making 有权
标题翻译：氧化锌膜及其制造方法
公开(公告)号：US08414971B2
公开(公告)日：2013-04-09
申请号：US12931748
申请日：2011-02-09
申请人： Isaiah O. Oladeji
发明人： Isaiah O. Oladeji
IPC分类号： B05D3/02
CPC分类号： H01L29/22 , C23C18/06 , C23C18/1216 , C23C18/1241 , C23C18/1275 , C23C18/1279 , C23C18/1283 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L21/67207 , H01L21/6838 , H01L21/68785 , Y10T428/12528
摘要： A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of O, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated. The showerhead may also dispense excess chilled reagent solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The deposited film may be annealed after deposition and may be doped to enhance selected characteristics. The ZnO films made by the process have distinctive electrical and optical properties and are suitable for a variety of electronic and optical devices.
摘要翻译：从试剂溶液将ZnO的固体膜沉积在基材上的方法包括保持在足够低的温度下以防止试剂溶液内的均匀反应的试剂溶液储存器。试剂溶液含有Zn源，O源和多个配体，以进一步控制溶液的稳定性和保质期。冷却的溶液通过喷头分配到基底上。衬底被定位在保持器中，该保持器具有围绕衬底周边的凸起结构，以将受控体积（或深度）的试剂溶液保持或压制在衬底的暴露表面上。试剂溶液从喷头定期或连续地补充，使得只有与基底直接相邻的溶液部分被加热。将加热器设置在基底下方并将基底保持在可以开始从试剂溶液沉积所需固相的升高的温度。淋浴头还可以分配多余的冷冻试剂溶液以冷却装置内的各种组分，并使除了在基底上的区域中的固体的成核最小化。沉积的膜可以在沉积之后退火，并且可以被掺杂以增强所选择的特性。该方法制备的ZnO薄膜具有独特的电气和光学性能，适用于各种电子和光学器件。

8. 发明授权

US07793611B2 Film growth system and method 有权
公开(公告)号：US07793611B2
公开(公告)日：2010-09-14
申请号：US12656000
申请日：2010-01-12
申请人： Isaiah O. Oladeji
发明人： Isaiah O. Oladeji
IPC分类号： B05C11/00
CPC分类号： H01L29/22 , C23C18/06 , C23C18/1216 , C23C18/1241 , C23C18/1275 , C23C18/1279 , C23C18/1283 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L21/67207 , H01L21/6838 , H01L21/68785 , Y10T428/12528
摘要： An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodically dispensed onto a substrate positioned in a holder having a raised peripheral structure that retains a controlled volume of solution over the substrate. The solution is periodically replenished so that only the part of the solution directly adjacent to the substrate is heated. A heater maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the solution may be initiated. The apparatus may also dispense excess chilled solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus is particularly suited to forming films of II-VI semiconductors.

9. 发明授权

US07700161B2 Film growth system and method 失效
标题翻译：电影成长系统及方法
公开(公告)号：US07700161B2
公开(公告)日：2010-04-20
申请号：US12151562
申请日：2008-05-07
申请人： Isaiah O. Oladeji
发明人： Isaiah O. Oladeji
IPC分类号： C23C4/08
CPC分类号： H01L29/22 , C23C18/06 , C23C18/1216 , C23C18/1241 , C23C18/1275 , C23C18/1279 , C23C18/1283 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L21/67207 , H01L21/6838 , H01L21/68785 , Y10T428/12528
摘要： An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains multiple ligands to further control temperature stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated. The showerhead may also dispense excess chilled reagent solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus and its associated method of use are particularly suited to forming films of II-VI semiconductors.
摘要翻译：用于从试剂溶液将固体膜沉积到基底上的装置包括保持在足够低的温度下以抑制试剂溶液中的均匀反应的试剂溶液储存器。试剂溶液含有多个配体以进一步控制温度稳定性和保质期。冷却的溶液通过喷头分配到基底上。衬底被定位在保持器中，该保持器具有围绕衬底周边的凸起结构，以将受控体积（或深度）的试剂溶液保持或压制在衬底的暴露表面上。试剂溶液从喷头定期或连续地补充，使得只有与基底直接相邻的溶液部分被加热。将加热器设置在基底下方并将基底保持在可以开始从试剂溶液沉积所需固相的升高的温度。淋浴头还可以分配多余的冷冻试剂溶液以冷却装置内的各种组分，并使除了在基底上的区域中的固体的成核最小化。该装置及其相关使用方法特别适用于形成II-VI族半导体的膜。

10. 发明授权

US08808405B2 Method of forming a solid state cathode for high energy density secondary batteries 有权
标题翻译：形成用于高能量密度二次电池的固态阴极的方法
公开(公告)号：US08808405B2
公开(公告)日：2014-08-19
申请号：US13986253
申请日：2013-04-16
申请人： Isaiah O. Oladeji
发明人： Isaiah O. Oladeji
IPC分类号： H01M6/00 , H01M10/058
CPC分类号： H01M10/058 , H01M4/0404 , H01M4/0419 , H01M4/0435 , H01M4/0471 , H01M4/049 , H01M4/1391 , H01M4/625 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0562 , H01M10/0566 , H01M10/26 , H01M10/28 , Y10T29/49108 , Y10T29/49115
摘要： A method for making a solid state cathode comprises the following steps: forming an alkali-free first solution comprising at least one transition metal and at least two ligands; spraying this solution onto a substrate that is heated to about 100 to 400° C. to form a first solid film containing the transition metal(s) on the substrate; forming a second solution comprising at least one alkali metal, at least one transition metal, and at least two ligands; spraying the second solution onto the first solid film on the substrate that is heated to about 100 to 400° C. to form a second solid film containing the alkali metal and at least one transition metal; and, heating to about 300 to 1000° C. in a selected atmosphere to react the first and second films to form a homogeneous cathode film. The cathode may be incorporated into a lithium or sodium ion battery.
摘要翻译：制备固态阴极的方法包括以下步骤：形成包含至少一种过渡金属和至少两种配体的无碱的第一溶液; 将该溶液喷射到加热至约100至400℃的基底上以在基底上形成含有过渡金属的第一固体膜; 形成包含至少一种碱金属，至少一种过渡金属和至少两种配体的第二溶液; 将第二溶液喷射到加热至约100至400℃的基底上的第一固体膜上以形成含有碱金属和至少一种过渡金属的第二固体膜; 并在选定的气氛中加热至约300至1000℃以使第一和第二膜反应以形成均匀的阴极膜。阴极可以并入锂或钠离子电池中。

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