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41. 发明授权

US07302563B2 Mailing list server and mail re-sending method thereof 失效
标题翻译：邮件列表服务器和邮件重发方法
公开(公告)号：US07302563B2
公开(公告)日：2007-11-27
申请号：US10345923
申请日：2003-01-17
申请人： Yutaka Kobayashi , Tomofumi Yokota , Naoyasu Terao
发明人： Yutaka Kobayashi , Tomofumi Yokota , Naoyasu Terao
IPC分类号： H04L9/00 , G06F7/04
CPC分类号： H04L63/0464 , H04L63/126 , H04L63/168
摘要： A mailing list server and a mail re-sending method thereof with which, when a mail recipient has been unable to decrypt a mail, it is possible to re-send the mail compatibly encrypted in a form such that the recipient can decrypt it without fail. A mail re-send request from a member is made by HTTP, received by a web server 20, and processed by an application server 21. For example, re-send request information is sent to the web server 20 by a mailing list member, using an input form of a web page 303 from the web server 20. The application server 21 determines an encryption method on the basis of a user encryption method specification included in the mail re-send request. A sending part 101 encrypts the mail by the determined method and sends it to the member's address.
摘要翻译：一种邮件列表服务器及其邮件重发方法，当邮件收件人不能解密邮件时，可以重新发送以一种形式进行兼容加密的邮件，使得接收者可以无故障地对其进行解密。来自成员的邮件重新发送请求由HTTP由Web服务器20接收并由应用服务器21处理。例如，使用来自web服务器20的网页303的输入形式，邮件列表成员将再发送请求信息发送到web服务器20。应用服务器21基于包含在邮件重发请求中的用户加密方法确定加密方法。发送部101通过确定的方法对邮件进行加密，并发送给会员的地址。

42. 发明授权

US07294002B2 Connector device 失效
标题翻译：连接器装置
公开(公告)号：US07294002B2
公开(公告)日：2007-11-13
申请号：US11635876
申请日：2006-12-08
申请人： Yutaka Noro , Yutaka Kobayashi
发明人： Yutaka Noro , Yutaka Kobayashi
IPC分类号： H01R13/62
CPC分类号： H01R13/516 , H01R13/62938 , H01R13/62972 , H01R13/62977 , H01R13/73 , H01R2201/26 , Y10S439/911
摘要： A connector device is provided with a box-shaped casing (50), a female housing (30) mounted into the casing (50) and displaceable between an initial position and an end position, and a slide (70) that is in the form of a frame having an operating portion (72) and mounted in the casing (50) for movement between a retreat position where a clearance exists between the operating portion (72) and the casing (50) and an advance position that narrows or eliminates the clearance. Before an operation of connecting both male and female housings (10, 30) is started, a protector (90) is inserted into a fitting space (91) between the operating portion (72) of the slide (70) and the casing (50). The slide (70) is held at the retreat position and the female housing (30) is held at the initial position by the protector (90).
摘要翻译：连接器装置设置有盒形壳体（50），安装到壳体（50）中并且可在初始位置和结束位置之间移位的阴壳体（30），以及滑动件（70），其形式为具有操作部分（72）并安装在壳体（50）中的框架，用于在操作部分（72）和壳体（50）之间存在间隙的退避位置和缩小或消除清关在连接两个阳壳体和阴壳体（10,30）的操作开始之前，保护器（90）插入在滑动件（70）的操作部分（72）和壳体（50）之间的配合空间（91））。滑动件（70）保持在退避位置，并且通过保护器（90）将阴壳体（30）保持在初始位置。

43. 发明申请

US20060270408A1 Mobile communication system, compressed-mode controlling method for the same system, and base and mobile stations in the same system 有权
公开(公告)号：US20060270408A1
公开(公告)日：2006-11-30
申请号：US11211042
申请日：2005-08-24
申请人： Yutaka Kobayashi , Makoto Uchishima , Natsuhiko Nakayauchi
发明人： Yutaka Kobayashi , Makoto Uchishima , Natsuhiko Nakayauchi
IPC分类号： H04Q7/20
CPC分类号： H04W36/0094 , H04W36/32 , H04W76/20
摘要： In a mobile communication system in which a compressed mode can be activated at the time of hand over, or when a base station which the mobile station is in communication with is switched to another base station, the distance between the mobile station and at least one of the plurality of base stations which is currently in communication with the mobile station is measured; and the activation of the compressed mode is controlled according to the measured distance. The activation of a compressed mode is controlled according to the distance between the base station and the mobile station.

44. 发明申请

US20060172616A1 Terminal fitting 有权
标题翻译：端子接头
公开(公告)号：US20060172616A1
公开(公告)日：2006-08-03
申请号：US11345357
申请日：2006-02-01
申请人： Yutaka Noro , Ryotaro Ishikawa , Hajime Kawase , Keiichi Nakamura , Yutaka Kobayashi
发明人： Yutaka Noro , Ryotaro Ishikawa , Hajime Kawase , Keiichi Nakamura , Yutaka Kobayashi
IPC分类号： H01R13/187
CPC分类号： H01R13/113 , H01R13/422 , H01R43/16
摘要： A terminal fitting (T) has a rectangular tube (10) with a bottom plate (12). A resilient contact (25) extends back into the tube (10) from an end of the bottom plate (12). A base portion (33) is formed at the front end of the bottom plate (12) and is made narrower than the bottom plate (12) by cutting away the left and right edges. A bulge (34) bulges out from a lateral edge of the base portion (33) and narrows an area of an opening between the base portion (33) and the right side plate (13R). Thus, external matter is less likely to intrude into the rectangular tube (10) through the opening even if the resilient contact (25) is narrow. Additionally, the base portion (33) is reinforced by the bulge (34). Thus, the base portion (33) is less likely to be deformed by external matter.
摘要翻译：端子接头（T）具有带有底板（12）的矩形管（10）。弹性接触件（25）从底板（12）的一端延伸回管（10）。基底部分（33）形成在底板（12）的前端，并通过切除左右边缘而比底板（12）更窄。凸起（34）从基部部分（33）的侧边缘凸起，并使基部（33）和右侧板（13 R）之间的开口的面积变窄。因此，即使弹性接触（25）较窄，外部物质也不太可能通过开口侵入矩形管（10）中。此外，基部（33）由凸起（34）加强。因此，基部（33）不太可能被外部物质变形。

45. 发明申请

US20060172615A1 Terminal fitting 有权
标题翻译：端子接头
公开(公告)号：US20060172615A1
公开(公告)日：2006-08-03
申请号：US11344858
申请日：2006-02-01
申请人： Yutaka Noro , Ryotaro Ishikawa , Hajime Kawase , Keiichi Nakamura , Yutaka Kobayashi
发明人： Yutaka Noro , Ryotaro Ishikawa , Hajime Kawase , Keiichi Nakamura , Yutaka Kobayashi
IPC分类号： H01R13/187
CPC分类号： H01R13/422 , H01R43/16
摘要： A terminal fitting (T) has a rectangular tube (10) with a base plate (12) and first and second side plates (13L, 13R) that extend from opposite sides of the base plate (12). A ceiling plate (14) extends from the first side plate (13L) towards the second side plate (13R), and a recess (37) is formed at an extending edge of the ceiling plate (14). A pressing portion (38) extends from the second side plate (13R) and is accommodated in the recess (37) for preventing upward displacement of the ceiling plate (14). Thus, there is no significant step between the upper surfaces of the ceiling plate (14) and the pressing portion (38) and the height of the rectangular tube (10) can be reduced.
摘要翻译：端子接头（T）具有矩形管（10），其具有基板（12）和从基板（12）的相对侧延伸的第一和第二侧板（13L，13R）。顶板（14）从第一侧板（13L）朝向第二侧板（13 R）延伸，并且在顶板（14）的延伸边缘处形成有凹部（37）。按压部（38）从第二侧板（13 R）延伸并容纳在凹部（37）中，以防止顶板（14）向上移位。因此，顶板（14）的上表面与按压部（38）之间没有显着的台阶，矩形管（10）的高度可以减小。

46. 发明申请

US20060058662A1 Ultrasonic imaging apparatus and method for ultrasonic imaging 有权
标题翻译：超声波成像设备及超声波成像方法
公开(公告)号：US20060058662A1
公开(公告)日：2006-03-16
申请号：US11213875
申请日：2005-08-30
申请人： Yutaka Kobayashi , Takanobu Uchibori , Taketoshi Nagai , Koichi Sato
发明人： Yutaka Kobayashi , Takanobu Uchibori , Taketoshi Nagai , Koichi Sato
IPC分类号： A61B8/00 , A61B8/14
CPC分类号： A61B8/463 , A61B5/044 , G06F19/00
摘要： A ultrasonic imaging apparatus comprises an ultrasonic probe including a plurality of ultrasonic transducers which perform ultrasonic transmission and reception to an object, a transceiver unit configured to obtain an ultrasonic signal from the object by driving the plurality of ultrasonic transducers, an ultrasonic data generation unit configured to generate ultrasonic data based on the ultrasonic signal, a time information generation unit configured to generate time information related to the ultrasonic transmission or reception and a time information addition unit configured to add the time information in a part of pixel data of the ultrasonic data in order to synchronize the Image data with biomedical signal, such as ECG.
摘要翻译：一种超声波成像装置，包括：超声波探头，其包括对物体进行超声波发送和接收的多个超声波换能器;被配置为通过驱动所述多个超声波换能器从所述物体获得超声波信号的收发器单元;配置基于所述超声波信号生成超声波数据;时间信息生成部，被配置为生成与所述超声波发送接收相关的时刻信息;以及时间信息添加部，将所述超声波数据的像素数据的一部分中的时间信息添加到以使图像数据与生物医学信号（如ECG）同步。

47. 发明授权

US06864559B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US06864559B2
公开(公告)日：2005-03-08
申请号：US10377717
申请日：2003-03-04
申请人： Shinji Nakazato , Hideaki Uchida , Yoshikazu Saito , Masahiro Yamamura , Yutaka Kobayashi , Takahide Ikeda , Ryoichi Hori , Goro Kitsukawa , Kiyoo Itoh , Nobuo Tanba , Takao Watanabe , Katsuhiro Shimohigashi , Noriyuki Homma
发明人： Shinji Nakazato , Hideaki Uchida , Yoshikazu Saito , Masahiro Yamamura , Yutaka Kobayashi , Takahide Ikeda , Ryoichi Hori , Goro Kitsukawa , Kiyoo Itoh , Nobuo Tanba , Takao Watanabe , Katsuhiro Shimohigashi , Noriyuki Homma
IPC分类号： H01L27/02 , H01L27/06 , H01L27/092 , H01L27/105 , H01L27/108 , H01L29/00
CPC分类号： H01L27/0623 , H01L27/0214 , H01L27/0218 , H01L27/0922 , H01L27/105 , H01L27/10805
摘要： Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements. As a second aspect of the present invention, first carrier absorbing areas (to absorb minority carriers) are located between the memory array and the switching circuit of the peripheral circuit, and second carrier absorbing areas are provided to surround input protective elements of the device. As a third embodiment of the present invention, a plurality of isolation regions of the same conductivity type are provided, with unequal voltages applied to these isolation regions, or unequal voltages applied to the substrate, on the one hand, and to these isolation regions, on the other.
摘要翻译：公开了一种半导体器件，例如半导体存储器件，其结构可以避免少数载流子从半导体衬底侵入形成在衬底上的器件的部件。半导体存储器件例如可以是SRAM或DRAM，并且在衬底上包括存储器阵列和外围电路。在本发明的一个方面中，在外围电路和存储器阵列中的至少一个之下提供与衬底相同的导电类型但具有比衬底的杂质浓度更高的杂质浓度的掩埋层。另外的区域可以例如从掩埋层延伸到半导体衬底的表面，掩埋层和组合的另外的区域用作屏蔽以防止少数载流子穿透到器件元件。作为本发明的第二方面，第一载流子吸收区域（以吸收少数载流子）位于存储器阵列和外围电路的开关电路之间，并且第二载流子吸收区域被设置为环绕该器件的输入保护元件。作为本发明的第三实施例，提供了相同导电类型的多个隔离区域，一方面施加到这些隔离区域的不同电压或施加到基板的不同电压以及这些隔离区域，在另一。

48. 发明授权

US5936832A Semiconductor memory device and method of operation thereof 失效
公开(公告)号：US5936832A
公开(公告)日：1999-08-10
申请号：US790055
申请日：1997-01-28
申请人： Ryuichi Saito , Hidekatsu Onose , Yutaka Kobayashi , Michio Ohue
发明人： Ryuichi Saito , Hidekatsu Onose , Yutaka Kobayashi , Michio Ohue
IPC分类号： G11C14/00 , G11C11/22 , G11C11/56 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/112 , H01L27/115 , H01G4/06
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/5657 , G11C16/08 , G11C8/14 , H01L27/10805
摘要： A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

49. 发明授权

US5785039A Single-crystalline diamond tip for dresser and dresser employing the same 失效
标题翻译：用于梳妆台和梳妆台的单晶金刚石尖端采用相同的
公开(公告)号：US5785039A
公开(公告)日：1998-07-28
申请号：US739450
申请日：1996-10-29
申请人： Yutaka Kobayashi , Akito Yoshida
发明人： Yutaka Kobayashi , Akito Yoshida
IPC分类号： B24B53/00 , B24B53/12
CPC分类号： B24B53/12
摘要： A diamond dresser having a long life and excellent wear resistance includes at least one diamond tip. An end surface of the diamond tip perpendicular to its longitudinal direction is formed by a {211} crystal plane. Two opposite side surfaces of the diamond tip extending along the longitudinal direction are formed by {111} crystal planes. The present crystal orientation of surfaces of the tip allows each tip to be embedded in a tip holder body on a flat plane while maintaining optimum alignment with respect to the most wear-resistant direction.
摘要翻译：具有长寿命和优异耐磨性的钻石修整器包括至少一个金刚石尖端。垂直于其纵向方向的金刚石尖端的端面由{211}晶面形成。沿着纵向方向延伸的金刚石尖端的两个相对侧表面由{111}晶面形成。尖端的表面的当前晶体取向允许每个尖端被嵌入到平坦平面上的尖端保持器主体中，同时保持相对于最耐磨方向的最佳对准。

50. 发明授权

US5700704A Process for fabricating a semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US5700704A
公开(公告)日：1997-12-23
申请号：US458615
申请日：1995-06-02
申请人： Shuji Ikeda , Satoshi Meguro , Soichiro Hashiba , Isamu Kuramoto , Atsuyoshi Koike , Katsuro Sasaki , Koichiro Ishibashi , Toshiaki Yamanaka , Naotaka Hashimoto , Nobuyuki Moriwaki , Shigeru Takahashi , Atsushi Hiraishi , Yutaka Kobayashi , Seigou Yukutake
发明人： Shuji Ikeda , Satoshi Meguro , Soichiro Hashiba , Isamu Kuramoto , Atsuyoshi Koike , Katsuro Sasaki , Koichiro Ishibashi , Toshiaki Yamanaka , Naotaka Hashimoto , Nobuyuki Moriwaki , Shigeru Takahashi , Atsushi Hiraishi , Yutaka Kobayashi , Seigou Yukutake
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903 , Y10S257/904
摘要： A method is provided for manufacturing a semiconductor integrated circuit device which includes a capacitor element having a first electrode, a second electrode, and a dielectric film formed between said first electrode and said second electrode. In particular, the method includes the step of forming at least one of the first electrode and second electrode with a polycrystalline silicon film which is deposited over a semiconductor substrate by a CVD method and which is doped with an impurity during said deposition to decrease the resistance of the polycrystalline silicon film. The capacitor element formed by this method is particularly useful for memory cells of static random access memory devices.
摘要翻译：提供一种用于制造半导体集成电路器件的方法，该半导体集成电路器件包括具有形成在所述第一电极和所述第二电极之间的第一电极，第二电极和电介质膜的电容器元件。特别地，该方法包括用多晶硅膜形成第一电极和第二电极中的至少一个的步骤，该多晶硅膜通过CVD方法沉积在半导体衬底上，并且在所述沉积期间掺杂有杂质以降低电阻的多晶硅膜。通过该方法形成的电容器元件对静态随机存取存储器件的存储单元特别有用。

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