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41. 发明申请

US20080131619A1 FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND CARBON 有权
标题翻译：含有硅和碳的外延层的形成和处理
公开(公告)号：US20080131619A1
公开(公告)日：2008-06-05
申请号：US11778212
申请日：2007-07-16
申请人： YONAH CHO , Yihwan Kim
发明人： YONAH CHO , Yihwan Kim
IPC分类号： C23C14/12
CPC分类号： H01L21/046 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/7834 , H01L29/7848
摘要： Methods for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment converts interstitial carbon to substitutional carbon in the epitaxial layer, according to one or more embodiments. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and combinations thereof. Embodiments include amorphization of at least a portion of the epitaxial layer containing silicon and carbon.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法。根据一个或多个实施方案，处理将间隙碳转化成外延层中的替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的处理包括退火短时间，例如通过激光退火，毫秒退火，快速热退火，尖峰退火及其组合。实施例包括至少部分含有硅和碳的外延层的非晶化。

42. 发明申请

US20080044932A1 CARBON PRECURSORS FOR USE DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：用于硅胶膜形成过程中使用的碳前驱物
公开(公告)号：US20080044932A1
公开(公告)日：2008-02-21
申请号：US11690588
申请日：2007-03-23
申请人： ARKADII SAMOILOV , Rohini Kodali , Ali Zojaji , Yihwan Kim
发明人： ARKADII SAMOILOV , Rohini Kodali , Ali Zojaji , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/32134 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/66272 , H01L29/6656 , H01L29/66636 , H01L29/732 , H01L29/7834
摘要： The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.
摘要翻译：本发明提供了在衬底上形成外延膜的系统和方法。在处理室中加热之后，将衬底暴露于硅源和SiH2（CH3）2，SiH（CH3）3，Si（CH3）4,1,3-二硅烷和C2H2中的至少一种，温度大于约250摄氏度，压力大于约1托，以便在至少一部分基底上形成外延膜。然后，将衬底暴露于蚀刻剂，以蚀刻外延膜和沉积期间形成的任何其它膜。可以重复沉积和蚀刻，直到达到所需厚度的膜。公开了许多其他方面。

43. 发明申请

US20080022924A1 METHODS OF FORMING CARBON-CONTAINING SILICON EPITAXIAL LAYERS 有权
标题翻译：形成含碳硅外延层的方法
公开(公告)号：US20080022924A1
公开(公告)日：2008-01-31
申请号：US11831055
申请日：2007-07-31
申请人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
发明人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/06
摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种在衬底上形成外延层堆叠的方法。该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。提供了许多其他方面。

44. 发明申请

US20070259112A1 GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION 有权
标题翻译：在外膜形成期间使用的气体歧管
公开(公告)号：US20070259112A1
公开(公告)日：2007-11-08
申请号：US11697516
申请日：2007-04-06
申请人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
发明人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
IPC分类号： C23C16/00 , C30B23/00 , C30B28/12
CPC分类号： C30B35/00 , C23C16/45561 , C30B25/14 , Y10T117/10
摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。公开了许多其他方面。

45. 发明授权

US07166528B2 Methods of selective deposition of heavily doped epitaxial SiGe 有权
标题翻译：选择沉积重掺杂外延SiGe的方法
公开(公告)号：US07166528B2
公开(公告)日：2007-01-23
申请号：US10683937
申请日：2003-10-10
申请人： Yihwan Kim , Arkadii V. Samoilov
发明人： Yihwan Kim , Arkadii V. Samoilov
IPC分类号： H01L21/44 , H01L21/336
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

46. 发明授权

US09064960B2 Selective epitaxy process control 有权
标题翻译：选择性外延过程控制
公开(公告)号：US09064960B2
公开(公告)日：2015-06-23
申请号：US11669550
申请日：2007-01-31
申请人： Andrew Lam , Yihwan Kim
发明人： Andrew Lam , Yihwan Kim
IPC分类号： C30B25/04 , H01L29/78 , C30B23/04 , H01L21/02 , H01L29/165 , H01L29/66 , C30B35/00 , H01L21/8238
CPC分类号： H01L29/7834 , C30B23/04 , C30B25/04 , C30B35/00 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.
摘要翻译：提供在处理室内包含的衬底表面上选择性地和外延地形成含硅材料的方法。在一个或多个实施例中，在材料沉积在衬底上时，处理室中的压力降低，并且在从衬底蚀刻材料期间增加。根据实施例，工艺气体通过第一区域和第二区域流入腔室，以提供流入第一区域的气体量与流向第二区域的气体的量的比率。在一个或多个实施例中，第一区域是内部径向区域，第二区域是外部径向区域，并且内部区域气体流与外部区域气体流量的比例在沉积期间比在蚀刻期间更小。根据一个或多个实施例，选择性外延工艺包括重复沉积周期，然后重复蚀刻工艺，以及任选的清洗直到生长外延层的期望厚度。

47. 发明授权

US08586456B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US08586456B2
公开(公告)日：2013-11-19
申请号：US13149865
申请日：2011-05-31
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： C23C16/24 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

48. 发明申请

US20120272898A1 METHOD AND APPARATUS FOR GAS DELIVERY 有权
标题翻译：用于气体输送的方法和装置
公开(公告)号：US20120272898A1
公开(公告)日：2012-11-01
申请号：US13191008
申请日：2011-07-26
申请人： Zhiyuan Ye , Yihwan KIM
发明人： Zhiyuan Ye , Yihwan KIM
IPC分类号： C23C16/455
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.
摘要翻译：本文公开了气体输送的方法和装置。在一些实施方案中，气体输送系统包括用于将固体或液体形式的前体储存的安瓿，连接到安瓿的第一导管，并且具有联接到第一气体源的第一端，以将前体的蒸汽从安瓿吸入，第一管道，第二管道，其在位于安瓿下游的第一连接处联接到第一管道，并且具有联接到第二气体源的第一端和联接到处理室的第二端，以及被配置为加热安瓿和至少第一管道的从安瓿到第二管道的第一部分，并仅加热第二管道的第二部分，其中第二管道的第二部分包括第一连接部。

49. 发明授权

US08029620B2 Methods of forming carbon-containing silicon epitaxial layers 有权
标题翻译：形成含碳硅外延层的方法
公开(公告)号：US08029620B2
公开(公告)日：2011-10-04
申请号：US11831055
申请日：2007-07-31
申请人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
发明人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B25/02 , C30B29/06
摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种在衬底上形成外延层堆叠的方法。该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。提供了许多其他方面。

50. 发明授权

US07741200B2 Formation and treatment of epitaxial layer containing silicon and carbon 有权
标题翻译：含硅和外延层的形成和处理
公开(公告)号：US07741200B2
公开(公告)日：2010-06-22
申请号：US11778212
申请日：2007-07-16
申请人： Yonah Cho , Yihwan Kim
发明人： Yonah Cho , Yihwan Kim
IPC分类号： H01L21/425
CPC分类号： H01L21/046 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/7834 , H01L29/7848
摘要： Methods for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment converts interstitial carbon to substitutional carbon in the epitaxial layer, according to one or more embodiments. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and combinations thereof. Embodiments include amorphization of at least a portion of the epitaxial layer containing silicon and carbon.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法。根据一个或多个实施方案，处理将间隙碳转化成外延层中的替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的处理包括退火短时间，例如通过激光退火，毫秒退火，快速热退火，尖峰退火及其组合。实施例包括至少部分含有硅和碳的外延层的非晶化。

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