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41. 发明授权

US5783489A Multi-oxidizer slurry for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的多氧化剂浆料
公开(公告)号：US5783489A
公开(公告)日：1998-07-21
申请号：US718937
申请日：1996-09-24
申请人： Vlasta Brusic Kaufman , Shumin Wang
发明人： Vlasta Brusic Kaufman , Shumin Wang
IPC分类号： C09G1/02 , B44C1/22
CPC分类号： C09G1/02
摘要： A chemical mechanical polishing slurry comprising at least two oxidizing agents, an organic acid and an abrasive and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.
摘要翻译：包含至少两种氧化剂，有机酸和研磨剂的化学机械抛光浆料以及使用化学机械抛光浆料从基材除去钛，氮化钛和含铝合金层的方法。

42. 发明授权

US08435421B2 Metal-passivating CMP compositions and methods 有权
标题翻译：金属钝化CMP组合物和方法
公开(公告)号：US08435421B2
公开(公告)日：2013-05-07
申请号：US13004113
申请日：2011-01-11
申请人： Jason Keleher , Pankaj Singh , Vlasta Brusic
发明人： Jason Keleher , Pankaj Singh , Vlasta Brusic
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C09G1/02 , C09K3/1409 , H01L21/3212
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.
摘要翻译：本发明提供用于抛光含铜和/或含银基材的化学机械抛光（CMP）组合物和方法。本发明的组合物在水性载体中包含颗粒磨料，初始成膜金属络合剂和二次成膜金属钝化剂。还公开了用本发明的组合物研磨衬底的方法。

43. 发明授权

US08062096B2 Use of CMP for aluminum mirror and solar cell fabrication 有权
标题翻译：使用CMP用于铝镜和太阳能电池制造
公开(公告)号：US08062096B2
公开(公告)日：2011-11-22
申请号：US11173518
申请日：2005-06-30
申请人： Vlasta Brusic , Richard Jon Jenkins , Christopher C. Thompson
发明人： Vlasta Brusic , Richard Jon Jenkins , Christopher C. Thompson
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , B24B13/015 , B24B29/02 , B24B37/044 , B24B37/24 , C09K3/1454 , H01L31/054
摘要： The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.
摘要翻译：本发明涉及一种抛光包含铝的基材的表面的方法，包括使基材的表面与抛光垫接触，以及抛光组合物，其包含研磨剂，氧化铝的试剂和液体载体，并在至少一部分表面以从衬底去除至少一些铝并抛光衬底的表面，其中磨料是颗粒形式并悬浮在液体载体中。

44. 发明申请

US20080156774A1 CMP method for gold-containing substrates 审中-公开
标题翻译：含金底物的CMP方法
公开(公告)号：US20080156774A1
公开(公告)日：2008-07-03
申请号：US12075019
申请日：2008-03-07
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： B44C1/22
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with a cyanide-free chemical-mechanical polishing (CMP) composition.
摘要翻译：本发明提供了用无氰化学机械抛光（CMP）组合物化学机械地抛光基底的含金表面的方法。

45. 发明授权

US07381648B2 Chemical mechanical polishing slurry useful for copper substrates 有权
标题翻译：用于铜基材的化学机械抛光浆料
公开(公告)号：US07381648B2
公开(公告)日：2008-06-03
申请号：US10616335
申请日：2003-07-09
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
摘要翻译：包含氧化剂，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料以及使用化学机械抛光浆料去除铜合金，钛，氮化钛，钽和氮化钽的层的方法从底物。浆料不包括单独的成膜剂。

46. 发明授权

US07368066B2 Gold CMP composition and method 有权
标题翻译：金CMP组成和方法
公开(公告)号：US07368066B2
公开(公告)日：2008-05-06
申请号：US11444866
申请日：2006-05-31
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： B44C1/22
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种无氰化学机械抛光（CMP）组合物，其可用于抛光基底的含金表面。 CMP组合物包含研磨剂，金氧化剂，不含氰化物的金增溶剂及其水性载体。本发明还提供了利用上述抛光组合物对衬底的含金表面进行化学机械抛光的方法。

47. 发明申请

US20070278184A1 Gold CMP composition and method 有权
标题翻译：金CMP组成和方法
公开(公告)号：US20070278184A1
公开(公告)日：2007-12-06
申请号：US11444866
申请日：2006-05-31
申请人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
发明人： Vlasta Brusic , Renjie Zhou , Christopher Thompson
IPC分类号： C03C15/00 , C23F1/00
CPC分类号： C23F3/04 , C09G1/02 , H01L21/3212
摘要： The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.
摘要翻译：本发明提供了一种无氰化学机械抛光（CMP）组合物，其可用于抛光基底的含金表面。 CMP组合物包含研磨剂，金氧化剂，不含氰化物的金增溶剂及其水性载体。本发明还提供了利用上述抛光组合物对衬底的含金表面进行化学机械抛光的方法。

48. 发明授权

US07265055B2 CMP of copper/ruthenium substrates 有权
标题翻译：铜/钌基板的CMP
公开(公告)号：US07265055B2
公开(公告)日：2007-09-04
申请号：US11259645
申请日：2005-10-26
申请人： Christopher C. Thompson , Vlasta Brusic , Renjie Zhou
发明人： Christopher C. Thompson , Vlasta Brusic , Renjie Zhou
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/04
摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.
摘要翻译：本发明提供了一种化学机械抛光衬底的方法。包含钌和铜的基材与包括抛光组分，过氧化氢，有机酸，至少一种包含至少一个氮原子的杂环化合物和水的化学机械抛光系统接触。抛光组分相对于基底移动，并且研磨衬底的至少一部分以抛光衬底。抛光系统的pH为约6至约12，钌和铜电接触，并且抛光系统中铜的开路电位与钌的开路电位之间的差为约50mV或更小。

49. 发明授权

US07161247B2 Polishing composition for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US07161247B2
公开(公告)日：2007-01-09
申请号：US10901420
申请日：2004-07-28
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher C. Thompson , Benjamin P. Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher C. Thompson , Benjamin P. Bayer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.
摘要翻译：本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法，所述抛光组合物包含（a）氧化贵金属的氧化剂，（b）选自硫酸盐，硼酸盐，硝酸盐和磷酸盐，和（c）液体载体。本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法，该抛光组合物包含（a）氧化高于+4氧化态的钌的氧化剂，（b）选自下组的抛光添加剂：由金属螯合聚合物，金属螯合剂，有机硫醇，还原四氧化钌的化合物，内酯和α-羟基羰基化合物组成。

50. 发明授权

US07160807B2 CMP of noble metals 有权
标题翻译：贵金属的CMP
公开(公告)号：US07160807B2
公开(公告)日：2007-01-09
申请号：US10610407
申请日：2003-06-30
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
摘要翻译：本发明提供了一种抛光衬底的方法，其包括（i）使包含贵金属层的衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）抛光组分，（b）氧化剂和（c）液体载体，和（ii）研磨贵金属层的至少一部分以抛光基底。抛光组分选自研磨剂，抛光垫或其组合，氧化剂选自溴酸盐，溴酸盐，次溴酸盐，氯酸盐，亚氯酸盐，次氯酸盐，高氯酸盐，碘酸盐，次碘酸盐，高碘酸酯，过氧乙酸，有机卤代氧化合物，其盐，及其组合。化学机械抛光系统的pH值约为9或更低，氧化剂不产生大量的元素卤素。本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法，所述抛光系统还包括停止化合物。

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