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41. 发明授权

US07919778B2 Making organic thin film transistor array panels 有权
标题翻译：制造有机薄膜晶体管阵列面板
公开(公告)号：US07919778B2
公开(公告)日：2011-04-05
申请号：US11634413
申请日：2006-12-05
申请人： Keun-Kyu Song , Bo-Sung Kim , Seung-Hwan Cho
发明人： Keun-Kyu Song , Bo-Sung Kim , Seung-Hwan Cho
IPC分类号： H01L29/08 , H01L21/84
CPC分类号： H01L51/0021 , H01L27/283 , H01L51/0545 , H01L51/102
摘要： An organic thin film transistor (OTFT) array panel for a display device includes a gate line and a pixel electrode formed on a substrate, the gate line and pixel electrode each having a first conductive layer including a transparent conductive oxide and a second conductive layer including a metal, a data line crossing the gate line and including a source electrode, a drain electrode facing the source electrode and connected with the pixel electrode, and an organic semiconductor in contact with the source electrode and the drain electrode.
摘要翻译：用于显示装置的有机薄膜晶体管（OTFT）阵列面板包括形成在基板上的栅极线和像素电极，栅线和像素电极各自具有包括透明导电氧化物的第一导电层和包括第金属，与栅极线交叉的数据线，包括源电极，面对源极的漏电极，与像素电极连接，以及与源电极和漏极接触的有机半导体。

42. 发明申请

US20100308326A1 THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20100308326A1
公开(公告)日：2010-12-09
申请号：US12790188
申请日：2010-05-28
申请人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
发明人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
摘要翻译：薄膜晶体管阵列面板包括：绝缘基板; 形成在所述绝缘基板上并且包括金属无机盐和乙酸锌的氧化物半导体层; 栅电极与氧化物半导体层重叠; 介于氧化物半导体层和栅电极之间的栅极绝缘膜; 以及与氧化物半导体层至少部分重叠并且彼此分离的源电极和漏电极。

43. 发明申请

US20100173451A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20100173451A1
公开(公告)日：2010-07-08
申请号：US12724265
申请日：2010-03-15
申请人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L51/40 , H01L21/336
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

44. 发明申请

US20100084644A1 DISPLAY SUBSTRATE METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板的制造方法
公开(公告)号：US20100084644A1
公开(公告)日：2010-04-08
申请号：US12575308
申请日：2009-10-07
申请人： Jung-Hun Noh , Myung-Hwan Kim , Seung-Hwan Cho
发明人： Jung-Hun Noh , Myung-Hwan Kim , Seung-Hwan Cho
IPC分类号： H01L51/10 , H01L33/00
CPC分类号： H01L51/0558 , H01L51/0541
摘要： A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.
摘要翻译：显示基板包括基底，阻挡图案，源电极，漏电极，半导体层，绝缘层和栅电极。阻挡图案从基底突出。源电极和栅电极邻近基底衬底上的阻挡图案的相对侧形成。半导体层设置在阻挡图案上以将源电极与漏电极连接，并且绝缘层覆盖半导体层，源电极和漏电极。栅电极设置在绝缘层上，与半导体层重叠。

45. 发明申请

US20090096949A1 THIN FILM TRANSISTOR ARRAY PANEL, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE WITH THE SAME 审中-公开
标题翻译：薄膜晶体管阵列板及其制造方法及其显示装置
公开(公告)号：US20090096949A1
公开(公告)日：2009-04-16
申请号：US12187687
申请日：2008-08-07
申请人： Seung-hwan CHO , Bo-sung KIM , Keun- Kyu SONG , Jung-hun NOH
发明人： Seung-hwan CHO , Bo-sung KIM , Keun- Kyu SONG , Jung-hun NOH
IPC分类号： G02F1/136 , H01L51/05 , H01L51/40
CPC分类号： H01L27/283 , G02F1/167 , H01L27/3262 , H01L51/0541
摘要： A thin film transistor array panel includes an insulating substrate, a first conductive layer disposed on the insulating substrate, an organic semiconductor disposed between the source electrode and the drain electrode, a gate insulating layer disposed on the organic semiconductor, and a second conductive layer disposed on the gate insulating layer. The first conductive layer includes a data line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and a pixel electrode connected to the drain electrode and formed of the same layer as the drain electrode, and the second conductive layer includes a gate line and a gate electrode connected to the gate line.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，设置在绝缘基板上的第一导电层，设置在源电极和漏电极之间的有机半导体，设置在有机半导体上的栅极绝缘层和设置在第二导电层上的第二导电层在栅极绝缘层上。第一导电层包括数据线，连接到数据线的源电极，与源电极间隔开的漏电极，以及连接到漏极并由与漏电极相同的层形成的像素电极，第二导电层包括连接到栅极线的栅极线和栅电极。

46. 发明申请

US20070278492A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20070278492A1
公开(公告)日：2007-12-06
申请号：US11756764
申请日：2007-06-01
申请人： Keun-Kyu SONG , Bo-Sung KIM , Seung-Hwan CHO
发明人： Keun-Kyu SONG , Bo-Sung KIM , Seung-Hwan CHO
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/283 , H01L27/3274 , H01L27/3276 , H01L29/41733 , H01L51/0036 , H01L51/0558
摘要： A thin film transistor array panel including a substrate, a plurality of data lines disposed on the substrate, an interlayer insulating layer disposed on the data lines and including contact holes through which the data lines are exposed, a plurality of source electrodes, each of the source electrodes disposed on the interlayer insulating layer and connected to the data line through the contact hole, a plurality of pixel electrodes, each of the pixel electrodes disposed on the interlayer insulating layer and including a drain electrode that faces a source electrode, organic semiconductors disposed on and partially overlapping the source electrodes and the drain electrodes, a gate insulating layer disposed on the organic semiconductors and gate lines disposed on the gate insulating layer and including gate electrodes overlapping the organic semiconductors.
摘要翻译：一种薄膜晶体管阵列面板，包括基板，设置在基板上的多条数据线，设置在数据线上的层间绝缘层，并且包括数据线暴露的接触孔，多个源电极，源电极，设置在层间绝缘层上并通过接触孔与数据线连接，多个像素电极，每个像素电极设置在层间绝缘层上，并且包括面对源电极的漏电极，设置有机半导体在源电极和漏极之间并部分重叠;栅极绝缘层，设置在有机半导体上，栅极线设置在栅极绝缘层上，并且包括与有机半导体重叠的栅电极。

47. 发明申请

US20070109457A1 Organic thin film transistor array panel 审中-公开
标题翻译：有机薄膜晶体管阵列面板
公开(公告)号：US20070109457A1
公开(公告)日：2007-05-17
申请号：US11599907
申请日：2006-11-14
申请人： Keun-Kyu Song , Seung-Hwan Cho
发明人： Keun-Kyu Song , Seung-Hwan Cho
IPC分类号： G02F1/136
CPC分类号： H01L27/283 , H01L51/0541
摘要： An OTFT array panel comprises a substrate; a data line formed on the substrate; a source electrode connected to the data line; a drain electrode including a portion facing the source electrode; a first organic semiconductor partially overlapping the source electrode and the drain electrode; a first gate insulating member formed on the first organic semiconductor; a blocking member formed on the first gate insulating member; a pixel electrode formed on the same layer as the blocking member and connected to the drain electrode; a gate line including the gate electrode, intersecting the data line, and formed on the blocking member and a method of manufacturing the same.
摘要翻译： OTFT阵列面板包括衬底; 形成在所述基板上的数据线; 连接到数据线的源电极; 漏极，包括面向所述源电极的部分; 与源电极和漏电极部分重叠的第一有机半导体; 形成在所述第一有机半导体上的第一栅极绝缘构件; 形成在所述第一栅极绝缘构件上的阻挡构件; 形成在与阻挡构件相同的层上并连接到漏电极的像素电极; 包括栅电极的栅极线，与数据线交叉并形成在阻挡构件上，以及制造该栅极线的方法。

48. 发明授权

US06519334B1 Method for processing incoming call in exchange system 有权
标题翻译：在交换系统中处理来电的方法
公开(公告)号：US06519334B1
公开(公告)日：2003-02-11
申请号：US09222671
申请日：1998-12-29
申请人： Seung-Hwan Cho
发明人： Seung-Hwan Cho
IPC分类号： H04M346
CPC分类号： H04M3/46 , H04M1/723 , H04M3/02 , H04M3/42314 , H04M2201/14 , H04M2201/38 , H04M2203/2044
摘要： An exchange system minimizing ring noises generated when processing an incoming call. Upon receipt of an incoming call from a central office line, the exchange system generates a ring to a called extension telephone to which the incoming call is terminated. Thereafter, it is determined whether there is an extension telephone designating a phone number of the called extension telephone. If there is the extension telephone designating the phone number of the called extension telephone, the exchange turns on/off a lamp prepared in the extension telephone or generates a ring to the above extension telephone, after an elapse of a predetermined time.
摘要翻译：一种交换系统，可最大限度地减少处理来电时产生的环路噪声。在从中心局线路接收到来话呼叫时，交换系统向呼叫终止的被叫分机电话产生一个响铃。此后，确定是否存在指定被叫分机的电话号码的分机电话。如果存在指定被叫分机的电话号码的分机电话，则在经过预定时间之后，交换机打开/关闭在分机中准备的灯，或者在上述分机上产生一个铃声。

49. 发明授权

US08519393B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08519393B2
公开(公告)日：2013-08-27
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/146 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

50. 发明授权

US08383449B2 Method of forming a thin film transistor having openings formed therein 有权
标题翻译：形成其中形成有开口的薄膜晶体管的方法
公开(公告)号：US08383449B2
公开(公告)日：2013-02-26
申请号：US12857442
申请日：2010-08-16
申请人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
发明人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
IPC分类号： H01L21/336
CPC分类号： H01L51/0541 , H01L27/1214 , H01L27/283 , H01L27/3244 , H01L51/0516 , H01L51/0545
摘要： A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.
摘要翻译：薄膜晶体管阵列面板包括基板，在基板上彼此交叉的多个第一和第二信号线，连接到第一信号线的源电极，连接到第二信号线的漏电极，连接到漏电极的像素电极形成在源电极和漏电极上并具有第一开口的第一分区，其中第一开口的较低宽度比第一开口的上宽度宽;形成在第一开口中的至少重叠部分的有机半导体，源极电极和漏极电极，以及连接到第二信号线并至少与有机半导体的部分重叠的栅电极。

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