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1. 发明授权

US08593592B2 Polarizer and liquid crystal display device having the same 有权
标题翻译：偏振器和液晶显示装置具有相同的特性
公开(公告)号：US08593592B2
公开(公告)日：2013-11-26
申请号：US12825570
申请日：2010-06-29
申请人： Min-Ho Yoon , Seung-Ju Lee , Jong-Seong Kim
发明人： Min-Ho Yoon , Seung-Ju Lee , Jong-Seong Kim
IPC分类号： G02F1/1335
CPC分类号： G02B5/3033 , G02F1/133528 , G02F2001/133311
摘要： A polarizer includes a polarizer main body, a first barrier layer disposed above the polarizer main body and/or a second barrier layer disposed below the polarizer main body. The first barrier layer and the second barrier layer include silicon nitride (SiNx).
摘要翻译：偏振器包括偏振器主体，设置在偏振器主体上方的第一阻挡层和/或设置在偏振器主体下方的第二阻挡层。第一阻挡层和第二阻挡层包括氮化硅（SiNx）。

2. 发明授权

US08252626B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08252626B2
公开(公告)日：2012-08-28
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译：一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体第二漏电极。

3. 发明授权

US07834348B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07834348B2
公开(公告)日：2010-11-16
申请号：US12388973
申请日：2009-02-19
申请人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
发明人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
IPC分类号： H01L35/24
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/3274 , H01L51/0545
摘要： The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.
摘要翻译：本发明提供一种显示装置及其制造方法。显示装置包括栅极线，与栅极线绝缘并与栅极线交叉的数据线，包括半导体层并连接到栅极线和数据线的薄膜晶体管，连接到薄膜晶体管的像素电极，以及与薄膜晶体管的沟道区相邻的虚拟漏电极。虚设漏电极不连接到像素电极。

4. 发明授权

US07709834B2 Organic thin film transistor substrate and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US07709834B2
公开(公告)日：2010-05-04
申请号：US11828971
申请日：2007-07-26
申请人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

5. 发明授权

US07692188B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07692188B2
公开(公告)日：2010-04-06
申请号：US11739804
申请日：2007-04-25
申请人： Seung-hwan Cho , Yong-uk Lee , Min-ho Yoon
发明人： Seung-hwan Cho , Yong-uk Lee , Min-ho Yoon
IPC分类号： H01L51/00
CPC分类号： H01L51/0545
摘要： A display device includes an insulation substrate, a source electrode and a drain electrode disposed on the insulation substrate and distanced from each other and including a channel area interposed therebetween, a wall exposing portions of the source electrode and the drain electrode, and defining an opening area surrounding the channel area, and an organic semiconductor layer covering the channel area, and comprising a first sub layer and a second sub layer having different grain sizes.
摘要翻译：显示装置包括绝缘基板，源电极和漏电极，其设置在绝缘基板上并彼此间隔并且包括插入其间的沟道区域，暴露源电极和漏电极的部分的壁，并且限定开口包围沟道区域的区域和覆盖沟道区域的有机半导体层，并且包括具有不同晶粒尺寸的第一子层和第二子层。

6. 发明申请

US20090057658A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20090057658A1
公开(公告)日：2009-03-05
申请号：US12196990
申请日：2008-08-22
申请人： Jung-Han SHIN , Seon-Pil JANG , Min-Ho YOON , Kyu-Young KIM
发明人： Jung-Han SHIN , Seon-Pil JANG , Min-Ho YOON , Kyu-Young KIM
IPC分类号： H01L51/10 , H01L21/70
CPC分类号： H01L51/0545
摘要： An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.
摘要翻译：有机薄膜晶体管基板包括基板，在基板的表面上的栅极线，在栅极线上绝缘的栅极绝缘层，栅极绝缘层上的数据线，连接到栅极线的有机薄膜晶体管，以及所述数据线，包括有机半导体层的有机薄膜晶体管，至少部分位于所述数据线上的堤绝缘层，所述堤绝缘层包括限定像素区域的壁部分和形成的像素电极在像素区域。

7. 发明申请

US20080296566A1 Making organic thin film transistor substrates for display devices 审中-公开
标题翻译：制造显示器件的有机薄膜晶体管基板
公开(公告)号：US20080296566A1
公开(公告)日：2008-12-04
申请号：US12156213
申请日：2008-05-30
申请人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
发明人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L29/02 , H01L21/00 , H01L27/28
CPC分类号： H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.
摘要翻译：用于显示装置的有机薄膜晶体管基板包括栅极线，与栅极线绝缘的数据线，至少两个有机薄膜晶体管，每个有源薄膜晶体管连接在栅极线和数据线之间，通常连接到主漏电极和连接到主漏电极的像素电极。

8. 发明申请

US20080023697A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US20080023697A1
公开(公告)日：2008-01-31
申请号：US11828971
申请日：2007-07-26
申请人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan CHO , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

9. 发明授权

US08252625B2 Organic thin film transistor substrate and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US08252625B2
公开(公告)日：2012-08-28
申请号：US12724265
申请日：2010-03-15
申请人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
发明人： Seung Hwan Cho , Keun Kyu Song , Min Ho Yoon
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0558
摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
摘要翻译：本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

10. 发明申请

US20110218297A1 NOVEL GLUCONACETOBACTER STRAIN HAVING CELLULOSE PRODUCING ACTIVITY 有权
标题翻译：具有生产活性的纤维素的新型葡萄球菌菌株
公开(公告)号：US20110218297A1
公开(公告)日：2011-09-08
申请号：US13038926
申请日：2011-03-02
申请人： Jong-Seong KIM , Woo-Jae LEE , Nam-Seok ROH , Sang-IL KIM , Min-Ho YOON , Young Tak SONG , Tae Jin KANG , Suk Heung OH , Seung-Jae LEE , Hye Jin KIM , Jin Ju YU , Dong Hyun YU , Young Sik YOON , Jong Hwan LEE
发明人： Jong-Seong KIM , Woo-Jae LEE , Nam-Seok ROH , Sang-IL KIM , Min-Ho YOON , Young Tak SONG , Tae Jin KANG , Suk Heung OH , Seung-Jae LEE , Hye Jin KIM , Jin Ju YU , Dong Hyun YU , Young Sik YOON , Jong Hwan LEE
IPC分类号： C08L1/02 , C12N1/20 , C12P19/04
CPC分类号： C08L1/02 , C12N1/20 , C12P19/04
摘要： Disclosed herein is a novel gluconacetobacter strain having cellulose producing activity. Specifically, the present invention relates to a novel gluconacetobacter strain producing nano-structured cellulose in a highly efficient manner. The cellulose produced by the strain, due to its superb thermodynamic properties, can be characterized as nano-structured bacterial cellulose and therefore utilized as a bio-nano-fiber. Particularly, the cellulose can be impregnated with a resin to form a cellulose-based resin which can be effectively adapted for a substrate for a liquid crystal display (LCD).
摘要翻译：本文公开了具有纤维素生产活性的新颖的葡萄糖酸菌属菌株。具体地说，本发明涉及以高效的方式生产纳米结构纤维素的新颖的葡糖酸菌属菌株。该菌株由于其极好的热力学性质而产生的纤维素可以表征为纳米结构的细菌纤维素，因此用作生物纳米纤维。特别地，纤维素可以用树脂浸渍以形成可以有效地适用于液晶显示器（LCD）的基板的纤维素类树脂。

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