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41. 发明授权

US08099802B2 Flush toilet equipment 有权
标题翻译：冲洗厕所设备
公开(公告)号：US08099802B2
公开(公告)日：2012-01-24
申请号：US11996903
申请日：2006-07-26
申请人： Shigeyuki Yamaguchi , Hitoshi Kitamura , Yasunari Maeda , Takaya Niu , Kazumasa Rokushima , Yoshihiro Ito , Naoki Shibata , Noriyuki Kitachi , Masato Suzuki
发明人： Shigeyuki Yamaguchi , Hitoshi Kitamura , Yasunari Maeda , Takaya Niu , Kazumasa Rokushima , Yoshihiro Ito , Naoki Shibata , Noriyuki Kitachi , Masato Suzuki
IPC分类号： E03D1/00
CPC分类号： E03D11/08 , C02F1/4672 , E03D5/10
摘要： Flush toilet equipment comprises a bowl, a flush mechanism that supplies flush water to the bowl through a flush water passage, and a minute bubble generator. The minute bubble generator generates minute bubbles. The bubbles are 0.1-1000 μm in bubble diameter and mixed with the flush water. In this construction, since the minute bubbles are fully diffused into the flush water, various effects such as improvement of toilet flush effect, etc. can be further enhanced.
摘要翻译：冲洗式厕所设备包括碗，冲洗机构，其通过冲洗水通道向碗内提供冲洗水，以及微小的气泡发生器。微小的气泡发生器产生微小的气泡。气泡直径为0.1-1000微米，与冲洗水混合。在这种结构中，由于微小气泡完全扩散到冲洗水中，因此可以进一步提高诸如提高马桶冲洗效果等的各种效果。

42. 发明授权

US08084281B2 Semiconductor substrate, electronic device, optical device, and production methods therefor 有权
标题翻译：半导体衬底，电子器件，光学器件及其制造方法
公开(公告)号：US08084281B2
公开(公告)日：2011-12-27
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

43. 发明授权

US07845983B2 Circuit board built-in connector and catcher 有权
标题翻译：电路板内置连接器和捕手
公开(公告)号：US07845983B2
公开(公告)日：2010-12-07
申请号：US12305281
申请日：2007-05-10
申请人： Kouhei Kawada , Jinsong Wang , Naoki Shibata
发明人： Kouhei Kawada , Jinsong Wang , Naoki Shibata
IPC分类号： H01R9/03
CPC分类号： H01Q1/1271 , H01Q1/22 , H01R9/0515 , H01R12/714 , H01R13/6658 , H01R2201/02
摘要： A circuit board built-in connector and a catcher are provided. The circuit board built-in connector and the catcher can be miniaturized, have high cable pulled-out strength and resistance to noise and electrostatic property, and are easy for installation and high in line operability. The circuit board built-in connector for connecting an antenna element (10) with a cable (20) is comprised of a circuit board (1), a ground member (2), and a cable clamping portion (3). The circuit board (1) has connecting terminals and an electronic circuit is placed thereon. The ground member (2) is provided adjacent to a side portion of the circuit board in a perpendicular manner to a plate surface of the circuit board. Then, the cable clamping portion (3) extends from the ground member to hold the cable (20). The catcher (5), on one hand, set on a side of the antenna element, is provided with a ground terminal (50) for connecting the ground member with the ground on the side of the antenna element, and a power supply terminal (51) for connecting a connecting terminal of the circuit board with the antenna element.
摘要翻译：提供电路板内置连接器和捕获器。电路板内置连接器和捕获器可以小型化，具有较高的电缆拉出强度，抗噪声和静电特性，易于安装和高线路可操作性。用于将天线元件（10）与电缆（20）连接的电路板内置连接器包括电路板（1），接地元件（2）和电缆夹紧部分（3）。电路板（1）具有连接端子，电子电路放置在其上。接地构件（2）以与电路板的板表面垂直的方式设置为与电路板的侧部相邻。然后，电缆夹紧部分（3）从接地部件延伸以保持电缆（20）。捕获器（5）一方面设置在天线元件的一侧，设置有用于将接地部件与天线元件侧的接地连接的接地端子（50），以及电源端子 51），用于将电路板的连接端子与天线元件连接。

44. 发明申请

US20090237405A1 DATA PROCESSING APPARATUS AND DATA PROCESSING METHOD 审中-公开
标题翻译：数据处理设备和数据处理方法
公开(公告)号：US20090237405A1
公开(公告)日：2009-09-24
申请号：US12396914
申请日：2009-03-03
申请人： Kimio Hayashi , Josuke Iwata , Shintaro Kuronuma , Naoki Shibata
发明人： Kimio Hayashi , Josuke Iwata , Shintaro Kuronuma , Naoki Shibata
IPC分类号： G06T11/20
CPC分类号： G06T11/60 , G06T11/206
摘要： In a data processing apparatus, a processor of an S88 processing unit comprises: a display unit that displays a diagram including a plurality of figures representing a processing unit and a connecting line representing a processing flow by connecting the plurality of figures together; an editing unit that executes, when receiving an editing command to edit the diagram from a user via a screen displayed by the display unit, the editing thus requested; and a link control unit that determines, when the editing unit receives an editing command to connect a first figure representing start or end of branched processing with a second figure representing a processing unit by using a connecting line, a point on a line forming the second figure, to which the connecting line is to be connected, such that one end of the connecting line is automatically connected, and that also connects, when receiving from the user a specification that specifies any position on a line to which the connecting line is to be connected among lines forming the first figure, the other end of the connecting line with the position specified by the user.
摘要翻译：在数据处理装置中，S88处理单元的处理器包括：显示单元，其通过将多个图形连接在一起来显示表示处理单元的多个图形和表示处理流程的连接线的图; 编辑单元，当接收到通过由显示单元显示的画面从用户编辑图形的编辑命令时，执行如此请求的编辑; 以及链接控制单元，当所述编辑单元接收到通过使用连接线接收表示分支处理的开始或结束的第一图形与表示处理单元的第二图形的编辑命令时，形成所述第二图形的线上的点连接线的连接线将自动连接到连接线的一端，并且当从用户接收到指定连接线所在的线上的任何位置的规格时，还连接在形成第一图形的线之间连接，连接线的另一端与用户指定的位置连接。

45. 发明授权

US07424361B2 Driving force controller for a vehicle 有权
标题翻译：车辆驱动力控制器
公开(公告)号：US07424361B2
公开(公告)日：2008-09-09
申请号：US11783265
申请日：2007-04-06
申请人： Toshio Masuda , Kenichi Yamamoto , Kenji Hijikata , Satoshi Satomura , Hiroshi Oishi , Toyohide Sunaguchi , Yoshio Iwakami , Munenori Homma , Atsushi Atake , Kouji Kaneda , Tatsuru Fukuda , Minoru Yuki , Masayuki Ushiki , Tsuyoshi Kobayashi , Masahito Motoi , Naoki Shibata , Hiroshi Ogiwara , Katsumasa Igarashi , Junzo Shinozuka , Akihisa Nakamura
发明人： Toshio Masuda , Kenichi Yamamoto , Kenji Hijikata , Satoshi Satomura , Hiroshi Oishi , Toyohide Sunaguchi , Yoshio Iwakami , Munenori Homma , Atsushi Atake , Kouji Kaneda , Tatsuru Fukuda , Minoru Yuki , Masayuki Ushiki , Tsuyoshi Kobayashi , Masahito Motoi , Naoki Shibata , Hiroshi Ogiwara , Katsumasa Igarashi , Junzo Shinozuka , Akihisa Nakamura
IPC分类号： G06F19/00
CPC分类号： F02D29/02 , B60W50/082
摘要： The driving force control unit for vehicle comprises a driving condition detecting unit for detecting the vehicle driving condition, a selector for selecting one of driving modes by manipulation, the driving modes including a first mode having a driving force characteristic suitable for normal driving and a second mode having a suppressed driving force, and driving force setting unit for setting a driving force indication value based on the selected mode and the vehicle driving conditions. The selector being formed by a multiple switch having a push switch which turns to ON state when a pressing force direction manipulation is applied, and other switch which turns to ON state when manipulation other than the pressing force direction is applied, the second mode is selected by the ON manipulation of the push switch.
摘要翻译：用于车辆的驱动力控制单元包括用于检测车辆行驶状态的驱动条件检测单元，用于通过操作来选择一种驾驶模式的选择器，包括具有适于正常驾驶的驱动力特性的第一模式的驱动模式和第二模式具有抑制驱动力的模式，以及用于基于所选择的模式和车辆驾驶条件来设定驱动力指示值的驱动力设定单元。选择器由具有按压开关的多个开关形成，当施加按压力方向操作时，该按钮转换到接通状态，并且在施加除了按压力方向之外的操作时变为接通状态的其他开关，选择第二模式通过ON操作按钮开关。

46. 发明申请

US20080173880A1 Light-emitting semiconductor device using group III nitrogen compound 有权
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20080173880A1
公开(公告)日：2008-07-24
申请号：US12003173
申请日：2007-12-20
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

47. 外观设计

USD571974S1 Liquid crystal display panel for forklift truck 有权
标题翻译：叉车液晶显示面板
公开(公告)号：USD571974S1
公开(公告)日：2008-06-24
申请号：US29273007
申请日：2007-02-26
申请人： Naoki Shibata , Kumiko Shibata
设计人： Naoki Shibata , Kumiko Shibata

48. 发明授权

US07332366B2 Light-emitting semiconductor device using group III nitrogen compound 失效
公开(公告)号：US07332366B2
公开(公告)日：2008-02-19
申请号：US11328079
申请日：2006-01-10
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L29/40
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

49. 发明申请

US20070278532A1 Field-Effect Transistor, Semiconductor Device, a Method for Manufacturing Them, and a Method of Semiconductor Crystal Growth 有权
标题翻译：场效应晶体管，半导体器件，其制造方法以及半导体晶体生长的方法
公开(公告)号：US20070278532A1
公开(公告)日：2007-12-06
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L29/778 , H01L21/335 , H01L21/338 , H01L29/812 , H01L21/36
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

50. 发明授权

US07190076B2 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same 有权
标题翻译： p型III族氮化物半导体层用电极及其制造方法
公开(公告)号：US07190076B2
公开(公告)日：2007-03-13
申请号：US10695453
申请日：2003-10-29
申请人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
发明人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
IPC分类号： H01L23/48 , H01L29/40 , H01L29/20 , H01L33/00 , H01L29/02
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/32 , H01L33/40
摘要： A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN substrate is heated to a temperature of 300° C. or by (2) vapor deposition while the GaN substrate is left at room temperature. (3) The electrode obtained in (2) is heated to 300° C. in a nitrogen atmosphere. The contact resistance of the electrode obtained in (1) is lower by two or three digits than that of the electrode obtained in (2) or (3). That is, the electric characteristic of the electrode obtained in (1) is improved greatly.
摘要翻译：通过AlN缓冲层在蓝宝石衬底上形成GaN层，并掺杂Mg以制备层压体（称为“GaN衬底”）。通过（1）在GaN衬底被加热到300℃之后或通过（2）气相沉积在GaN衬底留下时，通过（1）气相沉积在GaN衬底上形成50nm厚的金属（Pt和Ni）电极在室温下。（3）将（2）得到的电极在氮气氛中加热至300℃。（1）中获得的电极的接触电阻比在（2）或（3）中获得的电极的接触电阻低两位或三位数。也就是说，（1）中得到的电极的电特性大大提高。

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