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41. 发明申请

US20060073419A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same 有权
标题翻译：抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺，半导体器件及其制造方法
公开(公告)号：US20060073419A1
公开(公告)日：2006-04-06
申请号：US11045430
申请日：2005-01-31
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
IPC分类号： G03C1/76
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/128
摘要： The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
摘要翻译：本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法，抗蚀剂图案的增稠水平可以均匀，均匀且可控地被控制，而不会受到温度等环境变化的影响并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。半导体器件的制造方法的特征在于，在工件的表面上形成抗蚀剂图案，在抗蚀剂图案上涂布抗蚀剂图案增厚材料，使抗蚀剂图案变厚，形成增厚的抗蚀剂图案，并通过使用增厚的抗蚀剂图案作为掩模进行蚀刻，其中抗蚀剂图案增厚材料包含树脂，并且在涂覆或涂布在抗蚀剂图案上时，其pH值高于7且不超过14。

42. 发明申请

US20060046446A1 Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法以及栅电极及其制造方法
公开(公告)号：US20060046446A1
公开(公告)日：2006-03-02
申请号：US11022987
申请日：2004-12-28
申请人： Junichi Kon , Koji Nozaki , Kozo Makiyama , Toshihiro Ohki
发明人： Junichi Kon , Koji Nozaki , Kozo Makiyama , Toshihiro Ohki
IPC分类号： H01L21/28
CPC分类号： H01L29/42316 , H01L21/0272 , H01L21/0273 , H01L21/31144 , H01L29/66545 , H01L29/66553
摘要： A method for manufacturing a semiconductor device includes a step of forming a layer where a gate electrode aperture is to be formed including at least one ultraviolet resist layer on the surface where a gate electrode is to be formed, and forming a gate electrode aperture in the layer where a gate electrode aperture is to be formed; a step of forming a layer where an over-gate is to be formed in which an over-gate part of a gate electrode is to be formed, on the layer where a gate electrode aperture is to be formed; a step of reducing the width of the gate electrode aperture; and a step of forming the gate electrode in the gate electrode aperture. The method makes it possible to efficiently produce a fine gate electrode by thickening the gate electrode aperture and reducing the width of the gate electrode aperture.
摘要翻译：一种制造半导体器件的方法包括：在要形成栅电极孔的层上形成包括在要形成栅电极的表面上的至少一个抗紫外线层的层，并在其中形成栅电极孔的步骤要形成栅电极孔的层; 在要形成栅极电极孔的层上形成要形成栅极电极的栅极外部部分的形成栅极的层的步骤; 减小栅电极孔的宽度的步骤; 以及在栅电极孔中形成栅电极的步骤。该方法使得可以通过增厚栅电极孔径并减小栅极电极孔径的宽度来有效地产生精细的栅电极。

43. 发明申请

US20060023599A1 Optical disk player 失效
标题翻译：光盘播放器
公开(公告)号：US20060023599A1
公开(公告)日：2006-02-02
申请号：US11188851
申请日：2005-07-26
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： G11B5/09
CPC分类号： G11B20/00086 , G11B19/122 , G11B20/00797 , G11B20/0084
摘要： An available term of use of the player is set in terms of the number of dates or a playing time. If it is determined by a lock-setting determining unit that the player is lock-set when an optical disk is loaded, the player is lock-released by a lock releasing unit. After the player has been lock-released, if the available term is extended as a result that it is determined by an available term determining unit that the available term has expired or if it is determined that the available term has not expired yet, a playing start processing unit proceeds to processing of starting the playing. If the available term has expired, but should not be extended, the player is lock-set by a lock setting unit.
摘要翻译：播放器的可用使用期限是根据日期数量或播放时间设定的。如果由锁定设定确定单元确定当加载光盘时玩家被锁定，则玩家由锁定释放单元锁定释放。在播放器被锁定释放之后，如果可用的术语被扩展，结果是由可用的术语确定单元确定可用的术语已经过期，或者如果确定可用的术语还没有到期，则播放开始处理单元进行开始播放的处理。如果可用的期限已过期，但不应该延长，则播放器由锁定设置单元锁定。

44. 发明申请

US20050244144A1 Optical disk reproducing device 失效
标题翻译：光盘再生装置
公开(公告)号：US20050244144A1
公开(公告)日：2005-11-03
申请号：US11115413
申请日：2005-04-27
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： G11B20/10 , G11B27/00 , G11B27/10 , H04N5/781 , H04N5/783 , H04N5/85
CPC分类号： G11B27/005 , H04N5/783 , H04N5/85
摘要： An optical disk device includes an intermittent reproducing unit to perform an intermittent reproducing process to reproduce data recorded on an optical disk in a forward or reverse direction and at specific time intervals, each removing predetermined amount of data, an intermittent reproduction start instruction unit, upon receiving an instruction to start the intermittent reproducing process, to designate an intermittent reproduction start position and an intermittent reproducing direction, and to issue an instruction, and a storage unit to store the intermittent reproduction start position as information concerning a recording position for data skipped and unreproduced during a current intermittent reproducing process, when the instruction is issued. When an instruction is received to repeat the intermittent reproducing process, the intermittent reproduction start instruction unit employs the information to start the intermittent reproducing process beginning at a head of data skipped and unreproduced during a preceding intermittent reproducing process.
摘要翻译：光盘装置包括：间歇再现单元，用于执行间歇再现处理，以在正向或反向的方向上以特定的时间间隔再现记录在光盘上的数据，每个删除预定量的数据，间歇再现开始指令单元接收开始间歇再现处理的指令，指定间歇再现开始位置和间歇再现方向，并发出指令;以及存储单元，存储间歇再现开始位置作为与跳过的数据有关的记录位置的信息，以及在当前间歇再现处理期间，当指令被发出时，它不被再现。当接收到指令以重复间歇再现处理时，间歇再现开始指令单元使用该信息开始间歇再现处理，该数据从在前一个间歇再现处理期间跳过和未再生的数据的头开始。

45. 发明授权

US06506534B1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices 有权
标题翻译：负电阻组合物，形成抗蚀剂图案的方法和用于生产电子器件的方法
公开(公告)号：US06506534B1
公开(公告)日：2003-01-14
申请号：US09654433
申请日：2000-09-01
申请人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
IPC分类号： G03C1492
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/038 , H01L21/02118 , H01L21/02282 , H01L21/28123 , H01L21/312 , Y10S430/106 , Y10S430/111 , Y10S430/128
摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of imaage-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
摘要翻译：负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元其能够与碱溶性基团反应，和（2）光产酸剂，当通过吸收成形辐射分解时，能够产生可引起第二单体的醇结构之间的反应的酸单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。

46. 发明授权

US5962191A Resist compositions for forming resist patterns 失效
标题翻译：用于形成抗蚀剂图案的抗蚀剂组合物
公开(公告)号：US5962191A
公开(公告)日：1999-10-05
申请号：US132891
申请日：1998-08-12
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03F7/027 , C08F20/52 , C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/56 , C08K5/00 , C08L33/02 , C08L33/04 , C08L33/10 , C08L33/24 , C08L33/26 , G03F7/012 , G03F7/038 , H01L21/027 , H01L21/312 , G03C1/725
CPC分类号： G03F7/0125 , Y10S430/111 , Y10S430/128
摘要： The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要翻译：负极抗蚀剂组合物，其包含（甲基）丙烯酸酯共聚物，其包含（a）乙烯基单体单元，其侧链含有至少一个不涉及任何聚合反应的碳 - 碳双键，但是能够与交联剂交联，（b）丙烯酰胺或甲基丙烯酰胺单体单元，（c）丙烯酸或甲基丙烯酸单体单元和（d）丙烯酸或甲基丙烯酸金刚烷基单体单元以及能够在暴露于图案化辐射下分解，然后在加热时引起所述共聚物的交联。抗蚀剂组合物特别适合于使用碱性水溶液作为显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不溶胀。

47. 发明授权

US5932014A Apparatus for producing semiconductor device 失效
标题翻译：半导体装置的制造装置
公开(公告)号：US5932014A
公开(公告)日：1999-08-03
申请号：US748628
申请日：1996-11-13
申请人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
发明人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
IPC分类号： B65G49/07 , C23C16/54 , H01L21/677 , C23C16/00
CPC分类号： C23C16/54 , H01L21/67766 , H01L21/67781 , Y10T117/10
摘要： A semiconductor device producing apparatus includes a first transporter which moves a substrate to a first unit to undergo at least a first process, and a second transporter, other than the first transporter, which moves the substrate to a second unit, to undergo at least a second process.
摘要翻译：一种半导体器件制造装置包括：第一输送器，其将基板移动到第一单元以进行至少第一处理;以及除了第一输送器之外的第二输送器，其将基板移动到第二单元，以经历至少一个第二个过程。

48. 发明授权

US5824452A Resist compositions and process for the formation of resist patterns 失效
标题翻译：抗蚀剂图案形成的抗蚀剂组合物和方法
公开(公告)号：US5824452A
公开(公告)日：1998-10-20
申请号：US610345
申请日：1996-03-04
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03F7/027 , C08F20/52 , C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/56 , C08K5/00 , C08L33/02 , C08L33/04 , C08L33/10 , C08L33/24 , C08L33/26 , G03F7/012 , G03F7/038 , H01L21/027 , H01L21/312 , G03C5/00 , G03C1/725
CPC分类号： G03F7/0125 , Y10S430/111 , Y10S430/128
摘要： The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要翻译：负极抗蚀剂组合物，其包含（甲基）丙烯酸酯共聚物，其包含（a）乙烯基单体单元，其侧链含有至少一个不涉及任何聚合反应的碳 - 碳双键，但是能够与交联剂交联，（b）丙烯酰胺或甲基丙烯酰胺单体单元，（c）丙烯酸或甲基丙烯酸单体单元和（d）丙烯酸或甲基丙烯酸金刚烷基单体单元以及能够在暴露于图案化辐射下分解，然后在加热时引起所述共聚物的交联。抗蚀剂组合物特别适合于使用碱性水溶液作为显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不溶胀。

49. 发明授权

US5585222A Resist composition and process for forming resist pattern 失效
公开(公告)号：US5585222A
公开(公告)日：1996-12-17
申请号：US945909
申请日：1992-09-17
申请人： Yuko Kaimoto , Koji Nozaki
发明人： Yuko Kaimoto , Koji Nozaki
IPC分类号： G03F7/004 , G03F7/027 , G03F7/029 , G03F7/039 , G03F7/20 , H01L21/027 , G03F7/30 , G03C5/00 , G03F7/38
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111 , Y10S430/143 , Y10S430/146 , Y10S430/167 , Y10S430/168
摘要： A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

50. 发明授权

US5399647A Photoresist composition of 1-(1'-cyanoethenyl)adamantane 失效
标题翻译： 1-（1'-氰基乙烯基）金刚石的光致抗蚀剂组合物
公开(公告)号：US5399647A
公开(公告)日：1995-03-21
申请号：US275360
申请日：1994-07-15
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： C07C255/31 , C08F212/32 , C08F220/42 , G03F7/039 , G03C1/73
CPC分类号： C08F220/42 , C07C255/31 , C08F212/32 , G03F7/039 , C07C2103/74
摘要： New copolymers are disclosed which are copolymers of 1-(1'-cyanoethenyl)adamantane or 2-norbornene-2-carbonitrile monomer with an acrylate or methacrylate monomer. Resist compositions are also disclosed which comprise one of the disclosed new copolymers and an acid generator. The resist compositions advantageously form thinner resist films on substrates and, on the exposure to light having a short wavelength, such as KrF and ArF excimer laser light, provide finer resist pattern required in the production of advanced, highly integrated semiconductor devices. Novel 1-(1'-cyanoethenyl)adamantane is also disclosed.
摘要翻译：公开了1-（1'-氰基乙烯基）金刚烷或2-降冰片烯-2-腈单体与丙烯酸酯或甲基丙烯酸酯单体的共聚物的新型共聚物。还公开了包含所公开的新共聚物之一和酸发生剂的抗蚀剂组合物。抗蚀剂组合物有利地在衬底上形成较薄的抗蚀剂膜，并且在具有短波长的光（例如KrF和ArF准分子激光）的曝光下，提供了在先进的高度集成的半导体器件的生产中所需的更精细的抗蚀剂图案。还公开了新的1-（1'-氰基乙烯基）金刚烷。

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