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1. 发明授权

US5932014A Apparatus for producing semiconductor device 失效
标题翻译：半导体装置的制造装置
公开(公告)号：US5932014A
公开(公告)日：1999-08-03
申请号：US748628
申请日：1996-11-13
申请人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
发明人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
IPC分类号： B65G49/07 , C23C16/54 , H01L21/677 , C23C16/00
CPC分类号： C23C16/54 , H01L21/67766 , H01L21/67781 , Y10T117/10
摘要： A semiconductor device producing apparatus includes a first transporter which moves a substrate to a first unit to undergo at least a first process, and a second transporter, other than the first transporter, which moves the substrate to a second unit, to undergo at least a second process.
摘要翻译：一种半导体器件制造装置包括：第一输送器，其将基板移动到第一单元以进行至少第一处理;以及除了第一输送器之外的第二输送器，其将基板移动到第二单元，以经历至少一个第二个过程。

2. 发明授权

US5609688A Apparatus for producing semiconductor device 失效
标题翻译：半导体装置的制造装置
公开(公告)号：US5609688A
公开(公告)日：1997-03-11
申请号：US215603
申请日：1994-03-22
申请人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
发明人： Tetsuya Hayashi , Kazunori Okuyama , Tsuyoshi Inomata , Koji Nozaki , Minoru Hirose
IPC分类号： B65G49/07 , C23C16/54 , H01L21/677 , C23C16/00
CPC分类号： C23C16/54 , H01L21/67766 , H01L21/67781 , Y10T117/10
摘要： A semiconductor device producing method includes the steps of (a) subjecting a substrate which is transported by first transport means to at least a first process within a first unit, and (b) subjecting the substrate which is subjected to the step (a) and is transported by second transport means other than the first transport means to at least a second process within a second unit.
摘要翻译：半导体器件制造方法包括以下步骤：（a）使由第一输送装置输送的基板在第一单元内进行至少第一工序，（b）使经受步骤（a）的基板和由第二传送装置以外的第二传送装置传送到第二单元内的至少第二处理。

3. 发明授权

US08923668B2 Receiving method and separating apparatus for light outputted from multi-core optical fiber 有权
标题翻译：从多芯光纤输出的光的接收方法和分离装置
公开(公告)号：US08923668B2
公开(公告)日：2014-12-30
申请号：US13401963
申请日：2012-02-22
申请人： Tetsuya Hayashi , Osamu Shimakawa
发明人： Tetsuya Hayashi , Osamu Shimakawa
IPC分类号： G02B6/36 , G02B6/26 , G01M11/00 , G01M11/08 , G02B6/036 , G02B6/02
CPC分类号： G02B6/262 , G01M11/088 , G01M11/33 , G02B6/02042 , G02B6/03683 , G02B6/3652 , G02B6/403
摘要： According to the present invention, as a result of using a depressed or trench-assisted light-receiving waveguide in which the core is surrounded by a layer having a refractive index lower than that of a cladding as light-receiving means for receiving light outputted from a multi-core optical fiber, the layer of a low refractive index can inhibit the propagation of noise, etc. from the cladding to the core. Consequently, even in cases where the inter-core crosstalk is small, it is possible to accurately measure the inter-core crosstalk since components different from crosstalk-derived components in optical power are reduced.
摘要翻译：根据本发明，作为使用凹陷或沟槽辅助的光接收波导的结果，其中芯被折射率低于包层折射率的层包围，作为用于接收从包层输出的光的光接收装置多芯光纤，低折射率层可以抑制噪声等从包层到芯的传播。因此，即使在芯间串扰小的情况下，也可以精确地测量芯间串扰，因为与光功率中的串扰导出分量不同的组件减少。

4. 发明授权

US08507345B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08507345B2
公开(公告)日：2013-08-13
申请号：US13246454
申请日：2011-09-27
申请人： Tetsuya Hayashi , Hideaki Tanaka , Masakatsu Hoshi , Saichirou Kaneko
发明人： Tetsuya Hayashi , Hideaki Tanaka , Masakatsu Hoshi , Saichirou Kaneko
IPC分类号： H01L21/336
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
摘要翻译：本发明的一个方面提供了一种半导体器件，其包括第一导电型半导体本体，与半导体本体接触的源极区域，其带隙与半导体本体的带隙不同，并且与半导体本体形成异质结，与栅极绝缘膜接触的栅电极，源电极，与源极电极和源极区域接触的低电阻区域，以及与源电极欧姆连接，以及与半导体主体欧姆连接的漏电极。

5. 发明授权

US08441036B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08441036B2
公开(公告)日：2013-05-14
申请号：US11724389
申请日：2007-03-15
申请人： Yoshio Shimoida , Tetsuya Hayashi , Hideaki Tanaka , Shigeharu Yamagami , Masakatsu Hoshi
发明人： Yoshio Shimoida , Tetsuya Hayashi , Hideaki Tanaka , Shigeharu Yamagami , Masakatsu Hoshi
IPC分类号： H01L29/739
CPC分类号： H01L29/7828 , H01L21/0273 , H01L21/32139 , H01L29/1608 , H01L29/267 , H01L29/4236 , H01L29/66068
摘要： A trench is formed extending from a surface of a hetero semiconductor region of a polycrystal silicon to the drain region. Further, a driving point of the field effect transistor, where a gate insulating film, the hetero semiconductor region and the drain region are adjoined, is formed at a position spaced apart from a side wall of the trench.
摘要翻译：形成从多晶硅的异质半导体区域的表面延伸到漏极区域的沟槽。此外，栅极绝缘膜，异质半导体区域和漏极区域相邻的场效应晶体管的驱动点形成在与沟槽的侧壁间隔开的位置处。

6. 发明申请

US20130094825A1 OPTICAL FIBER, OPTICAL FIBER CORD, AND OPTICAL FIBER CABLE 有权
标题翻译：光纤，光纤线和光纤电缆
公开(公告)号：US20130094825A1
公开(公告)日：2013-04-18
申请号：US13805465
申请日：2012-03-19
申请人： Tatsuya Konishi , Tetsuya Nakanishi , Tetsuya Hayashi
发明人： Tatsuya Konishi , Tetsuya Nakanishi , Tetsuya Hayashi
IPC分类号： G02B6/036
CPC分类号： G02B6/03638 , G02B6/0365
摘要： A trench optical fiber that stably realizes a small transmission loss includes (1) a core extending in an axial direction while containing an axial center of the fiber, the core having a diameter d1 of 7.0 μm to 7.4 μm; (2) a first optical cladding layer surrounding the core and having an outside diameter d2 of 1.67 dl to 2.5 dl; (3) a second optical cladding layer surrounding the first optical cladding layer; and (4) a jacket layer surrounding the second optical cladding layer and containing fluorine having a concentration of 0.06 wt % or higher. A relative refractive index difference Δ1 of the core with respect to the jacket layer is 0.31% to 0.37%. A relative refractive index difference Δ2 of the first optical cladding layer with respect to the jacket layer is +0.02% or larger and smaller than Δ1. A relative refractive index difference Δ3 of the second optical cladding layer with respect to the jacket layer is −0.2% or smaller.
摘要翻译：稳定地实现小的传输损耗的沟槽光纤包括：（1）沿轴向延伸的芯，同时包含纤维的轴向中心，芯的直径d1为7.0μm至7.4μm; （2）包围芯的第一光学包层，外径d2为1.67dl至2.5dl; （3）围绕所述第一光学包层的第二光学包层; 和（4）围绕第二光学包层并且含有浓度为0.06重量％以上的氟的护套层。芯相对于护套层的相对折射率差Δ1为0.31％至0.37％。第一光学包层相对于护套层的相对折射率差Δ2为+ 0.02％以上且小于Delta1。第二光学包覆层相对于护套层的相对折射率差Δ3为-0.2％以下。

7. 发明授权

US08400896B2 Information recording and reproducing apparatus, program for controlling same, computer-readable storage medium, method for controlling information recording and reproducing apparatus, and information storage medium 失效
标题翻译：信息记录和再现装置，用于控制其的程序，计算机可读存储介质，用于控制信息记录和再现装置的方法以及信息存储介质
公开(公告)号：US08400896B2
公开(公告)日：2013-03-19
申请号：US13138519
申请日：2010-02-22
申请人： Atsushi Etoh , Tetsuya Okumura , Hideharu Tajima , Shigemi Maeda , Yoshihisa Adachi , Tetsuya Hayashi , Yasuhiro Harada , Takashi Arimoto , Ikuo Nakano , Masaki Yamamoto , Hirohisa Yamada
发明人： Atsushi Etoh , Tetsuya Okumura , Hideharu Tajima , Shigemi Maeda , Yoshihisa Adachi , Tetsuya Hayashi , Yasuhiro Harada , Takashi Arimoto , Ikuo Nakano , Masaki Yamamoto , Hirohisa Yamada
IPC分类号： G11B15/04
CPC分类号： G11B7/00736 , G11B7/08511 , G11B7/24038 , G11B19/127 , G11B2007/0013 , G11B2220/235
摘要： An invention disclosed includes a layer number obtaining section (222) for determining which information storage layer (L1) has been accessed and a layer type identifying section (223) for identifying a type of the information storage layer (L1) determined by the layer number obtaining section (222). With the configuration, even in a case where an information recording and reproducing apparatus accesses an information storage layer different from an intended information storage layer by false operation or the like, it is still possible to dissolve mismatching between a recording or reproduction control scheme being set up and a recording or reproduction control scheme suitable for the information storage layer thus accessed.
摘要翻译：所公开的发明包括用于确定已经访问了哪个信息存储层（L1）的层号获取部分（222）和用于识别由层号确定的信息存储层（L1）的类型的层类型识别部分（223）获取部分（222）。利用这种配置，即使在信息记录和再现装置通过错误操作等访问与预期信息存储层不同的信息存储层的情况下，仍然可以解决设置的记录或再现控制方案之间的不匹配以及适合于如此访问的信息存储层的记录或再现控制方案。

8. 发明申请

US20120182325A1 ELECTRONIC DEVICE AND STORAGE MEDIUM 有权
标题翻译：电子设备和存储介质
公开(公告)号：US20120182325A1
公开(公告)日：2012-07-19
申请号：US13347874
申请日：2012-01-11
申请人： Tetsuya Hayashi
发明人： Tetsuya Hayashi
IPC分类号： G06F3/041 , G09G5/00
CPC分类号： G06F3/04883 , G06F3/0485
摘要： In the present invention, various control can be actualized by a simple operation when display content is controlled based on a touch operation.When a slide operation is performed in which a finger or the like is moved on a touch sensor 8 while touching it, and the pattern of the slide operation determined based on the movement directions of the slide operation is a predetermined pattern in which the finger or the like is initially moved in one direction, and after being temporarily stopped, moved in a different direction, a control section 1 performs image scrolling based on the predetermined pattern, as control of display content displayed on a display section 7.
摘要翻译：在本发明中，当基于触摸操作来控制显示内容时，可以通过简单的操作来实现各种控制。当在触摸传感器8上进行手指等移动的滑动操作，并且基于滑动操作的移动方向确定的滑动操作的图案是其中手指或最初在一个方向上移动，并且在暂时停止之后沿不同的方向移动，控制部分1基于预定图案执行图像滚动，作为显示在显示部分7上的显示内容的控制。

9. 发明授权

US08169506B2 Image storage apparatus having continuous-shooting function 有权
标题翻译：具有连续拍摄功能的图像存储装置
公开(公告)号：US08169506B2
公开(公告)日：2012-05-01
申请号：US12077513
申请日：2008-03-19
申请人： Tetsuya Hayashi
发明人： Tetsuya Hayashi
IPC分类号： H04N5/76
CPC分类号： H04N5/772 , H04N1/00278 , H04N1/00291 , H04N1/2145 , H04N1/32358 , H04N9/8042 , H04N21/4335 , H04N2101/00 , H04N2201/0084 , H04N2201/3288 , H04N2201/3295
摘要： An image storage apparatus comprises an image capture unit configured to sequentially capture images of a subject, a storage unit including storage areas to store the images of the subject captured by the image capture unit, a storage controller configured to overwrite a storage area which is permitted to be overwritten with an image of the subject captured by the image capture unit, a life setting unit configured to set a life of the storage area which is overwritten by the storage controller, a life controller configured to change gradually the life of the storage area set by the life setting unit, a determination unit configured to determine whether the life of the storage area changed by the life controller expires or not, and a permission unit configured to permit to overwrite a storage area when the determination unit determines that the life of the storage area expires.
摘要翻译：图像存储装置包括被配置为顺序地捕获被摄体的图像的图像拍摄单元，包括存储由图像捕获单元捕获的被摄体的图像的存储区域的存储单元，被配置为覆盖被允许的存储区域的存储控制器被图像拍摄单元拍摄的被摄体的图像重写;生活设定单元，其被配置为设定由存储控制器覆盖的存储区域的寿命;寿命控制器，其被配置为逐渐改变存储区域的寿命由所述寿命设定单元设定的判断单元，确定单元，其被配置为确定所述寿命控制器改变的存储区域的寿命是否过期;以及许可单元，被配置为当所述确定单元确定所述存储区域的寿命存储区域过期。

10. 发明授权

US08164116B2 Semiconductor device with hetero semiconductor region and method of manufacturing the same 有权
标题翻译：具有异质半导体区域的半导体器件及其制造方法
公开(公告)号：US08164116B2
公开(公告)日：2012-04-24
申请号：US12065847
申请日：2006-08-22
申请人： Tetsuya Hayashi , Yoshio Shimoida , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Yoshio Shimoida , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/66
CPC分类号： H01L29/861 , H01L21/046 , H01L29/0623 , H01L29/0653 , H01L29/1608 , H01L29/267 , H01L29/6606 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
摘要翻译：半导体器件包括：半导体基底; 与半导体基底接触并且具有与半导体基底不同的带隙的异质半导体区域; 连接到所述异质半导体区域的第一电极; 以及形成与半导体基底的欧姆接触的第二电极。异质半导体区域包括通过层叠在至少两层之间的边界处晶体取向不连续的多个半导体层而形成的层叠异质半导体区域。

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