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41. 发明申请

US20060234142A1 Methods of forming reticles 有权
公开(公告)号：US20060234142A1
公开(公告)日：2006-10-19
申请号：US11453425
申请日：2006-06-14
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G03C5/00 , G03F9/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/34
摘要： The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over the base. A thickness of the relatively opaque material of the main-field region is reduced relative to a thickness of the relatively opaque material of the boundary region. A reticle construction of the present invention can comprise a relatively transparent base, and a relatively opaque material over the base. The construction can have a defined main-field region and a defined boundary region, and the relatively opaque material of the main-field region can have a reduced thickness relative to the relatively opaque material of the boundary region.

42. 发明授权

US06723476B2 Methods of patterning materials; and photomasks 失效
标题翻译：图案材料的方法; 和光掩模
公开(公告)号：US06723476B2
公开(公告)日：2004-04-20
申请号：US09920971
申请日：2001-08-01
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G03F900
CPC分类号： G03F1/68
摘要： The invention includes a method of patterning a mass of material. A beam of activated particles is formed proximate the mass of material, and a pattern of deposit is formed on a surface of the mass with the beam of activated particles. The mass is then etched while using the deposit as an etch mask. The mass of material can be associated with a radiation-patterning tool, such as, for example, a photomask, or can be associated with a semiconductor substrate. The invention also encompasses a photomask construction comprising a substrate, and a patterned material over the substrate. The patterned material covers some regions of the substrate, and leaves other regions not covered. A carbon-containing layer is on the patterned material, but not over the regions of the substrate that are not covered by the patterned material.
摘要翻译：本发明包括图案化大量材料的方法。一束激活的颗粒在材料质量附近形成，并且在物质的表面上形成沉积物的图案与活化颗粒束。然后在使用沉积物作为蚀刻掩模的同时蚀刻质量。材料的质量可以与辐射图案化工具（例如光掩模）相关联，或者可以与半导体衬底相关联。本发明还包括一种光掩模结构，其包括衬底和在衬底上的图案化材料。图案化材料覆盖衬底的一些区域，并且留下未覆盖的其它区域。含碳层位于图案化材料上，但不在衬底的未被图案化材料覆盖的区域上。

43. 发明授权

US06525317B1 Reduction of charging effect and carbon deposition caused by electron beam devices 失效
标题翻译：减少电子束装置引起的充电效应和碳沉积
公开(公告)号：US06525317B1
公开(公告)日：2003-02-25
申请号：US09222999
申请日：1998-12-30
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G01N2300
CPC分类号： H01J37/28 , G01N23/225 , H01J37/026 , H01J2237/0041 , H01J2237/006 , H01J2237/022
摘要： A method and apparatus for reducing the charging effect of electron beam devices on non-conducting samples includes introducing a water containing gas on the sample surface. Because the water containing gas is conductive, the charge is dissipated. The water containing gas may be introduced by a nozzle and the pressure may be adjusted to provide an amount of water containing gas sufficient to dissipate the charging effect produced by the electron beam. In a preferred embodiment, the water containing gas is water vapor. This technique is especially useful for inspection of quartz samples such as quartz photomasks with scanning electron microscopes because water vapor exhibits good adhesion to quartz surfaces, which helps to distribute and dissipate the charge quickly. A method for reducing carbon deposition caused by an electron beam device also involves introducing a water containing gas on the sample surface. This method is effective for both conductive and non-conductive samples.
摘要翻译：用于减少电子束装置对非导电样品的充电效应的方法和装置包括在样品表面上引入含水气体。因为含水气体是导电的，所以电荷消耗。含水气体可以通过喷嘴引入，并且可以调节压力以提供足以消散由电子束产生的带电效应的足够量的含水气体。在优选的实施方案中，含水气体是水蒸气。这种技术特别适用于使用扫描电子显微镜检查石英样品如石英光掩模，因为水蒸气对石英表面表现出良好的附着力，这有助于快速分布和消散电荷。用于减少由电子束装置引起的碳沉积的方法还包括在样品表面上引入含水气体。该方法对于导电和非导电样品都是有效的。

44. 发明授权

US6103430A Method for repairing bump and divot defects in a phase shifting mask 有权
标题翻译：在相移掩模中修复凸起和凹陷缺陷的方法
公开(公告)号：US6103430A
公开(公告)日：2000-08-15
申请号：US223000
申请日：1998-12-30
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G03F1/26 , G03F1/30 , G03F1/72 , G03F9/00
CPC分类号： G03F1/72 , G03F1/26 , G03F1/30
摘要： A method for repairing bump and divot defects in phase shifting masks is performed by first identifying the locations of defects. Then, whether the defect is in a phase shift well or non-phase shift area is determined. The mask is then coated with photoresist. The immediate area surrounding each defect to be repaired (depending upon whether the defect is in a phase shift well or non-phase shift area), is then exposed to ultraviolet light. Additional defects are then identified and corresponding areas of the resist exposed. The resist is then developed such that the defect areas are not covered by the resist. Then SOG (spin on glass) material is deposited in the defect areas. The thickness of the SOG material at the areas to be repaired is measured. The SOG material is then etched to the surface of the substrate, thereby repairing both bump and divot defects. The process is performed in two iterations in which defects in a first type of area (phase shift or non-phase shift) are repaired in the first iteration and the remaining defects are repaired in the second iteration. The process may be performed using an optical microscope with yellow and ultraviolet light filters and an adjustable field aperture.
摘要翻译：通过首先识别缺陷的位置来执行用于修复相移掩模中的凸起和凹陷缺陷的方法。然后，确定缺陷是相移阱还是非相移区域。然后将掩模用光致抗蚀剂涂覆。然后暴露于紫外光下，将要修复的每个缺陷周围的立即区域（取决于缺陷是相移阱还是非相移区域）。然后识别另外的缺陷并且抗蚀剂的相应区域暴露。然后显影抗蚀剂使得缺陷区域不被抗蚀剂覆盖。然后将SOG（旋转玻璃）材料沉积在缺陷区域。测量待修复区域的SOG材料的厚度。然后将SOG材料蚀刻到衬底的表面，从而修复凸起和凹陷缺陷。该过程在两次迭代中进行，其中在第一次迭代中修复第一类型区域（相移或非相移）中的缺陷，并且在第二次迭代中修复剩余的缺陷。该过程可以使用具有黄色和紫外光过滤器的光学显微镜以及可调节的场孔来进行。

45. 发明授权

US6030731A Method for removing the carbon halo caused by FIB clear defect repair of a photomask 有权
标题翻译：由FIB清除光掩模缺陷修复引起的碳晕晕的方法
公开(公告)号：US6030731A
公开(公告)日：2000-02-29
申请号：US190057
申请日：1998-11-12
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G03F1/74 , G03F9/00
CPC分类号： G03F1/74
摘要： A method of repairing clear defects on a template such as a mask or reticle that includes the steps of directing a focused ion beam (FIB) to fill the clear defect with a carbon film and directing a FIB in the presence of a water containing gas to remove the carbon halo from around the clear defect repair area. The end of the carbon halo removal process may be detected by monitoring a change in the intensity of a secondary signal. The template is exposed to a basic solution to remove ion stains produced by the FIB. According to this method, clear defects are repaired and the carbon halo formed around the clear defect repair area of the template are removed.
摘要翻译：在掩模或掩模版上的模板上修复清晰的缺陷的方法包括以下步骤：引导聚焦离子束（FIB）用碳膜填充透明缺陷并在存在含水气体的情况下引导FIB 从清除缺陷修复区周围清除碳晕。可以通过监测次级信号的强度的变化来检测碳晕去除过程的结束。将模板暴露于碱性溶液以除去FIB产生的离子污渍。根据该方法，修复了明显的缺陷，并且去除了模板的清除缺陷修复区周围形成的碳晕。

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