专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US5897332A Method for manufacturing photoelectric conversion element 失效
标题翻译：光电转换元件制造方法
公开(公告)号：US5897332A
公开(公告)日：1999-04-27
申请号：US717629
申请日：1996-09-23
申请人： Tadashi Hori , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Kohda , Tomonori Nishimoto , Takahiro Yajima
发明人： Tadashi Hori , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Kohda , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20
CPC分类号： H01L31/206 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.
摘要翻译：一种制造包含至少一个pin结的光电转换元件的方法，其中在n型层和i型层之间和/或i型层和p型层之间设置有扩散防止层，并且淀积温度在其厚度方向上不同而沉积扩散防止层。

42. 发明授权

US5548986A Method and apparatus for simultaneously forming at least four metal rounds 失效
标题翻译：用于同时形成至少四个金属圆的方法和装置
公开(公告)号：US5548986A
公开(公告)日：1996-08-27
申请号：US273597
申请日：1994-07-11
申请人： Giichi Matsuo , Akira Sakai , Jeral Rains , Dayton Elley
发明人： Giichi Matsuo , Akira Sakai , Jeral Rains , Dayton Elley
IPC分类号： B21B1/08 , B21B1/16 , B21B1/18 , B21B27/02
CPC分类号： B21B1/0815 , B21B1/163 , Y10T83/6489
摘要： This invention relates to a method and apparatus for simultaneously forming four metal rounds and includes disclosure of two pair of forming rollers, a preslitter roller pair and two pair of slitting rollers, the dimensioning of the ridges and grooves of which, in combination, serve to separate an entering bar into four strands of substantially equal area for simultaneous forming into metal rounds.
摘要翻译：本发明涉及一种用于同时形成四个金属圆的方法和装置，包括两对成形辊，预驱动辊对和两对分切辊的公开，其组合的脊和槽的尺寸组合起来用于将进入的棒分成四股基本相等的面积，以同时成型成金属圆。

43. 外观设计

USD364387S Portable personal computer 失效
公开(公告)号：USD364387S
公开(公告)日：1995-11-21
申请号：US28155
申请日：1994-09-08
申请人： Taneaki Chiba , Mari Goudo , Akira Sakai , Kenichirou Matsushita
设计人： Taneaki Chiba , Mari Goudo , Akira Sakai , Kenichirou Matsushita

44. 发明授权

US5439844A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US5439844A
公开(公告)日：1995-08-08
申请号：US60508
申请日：1993-05-12
申请人： Akira Sakai
发明人： Akira Sakai
IPC分类号： C23C16/24 , C23C16/452 , H01L21/205 , C30B29/12
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , H01L21/02406 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262
摘要： A process for forming a deposited film comprises the steps:(a) arranging a substrate having crystal orientability uniformly on its surface in a film forming space for formation of a deposited film;(b) introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other, thus permitting both the species to react chemically with each other thereby to form a deposited film on the above substrate; and(c) introducing into said film forming space a gaseous substance (E) having etching action on said deposited film to be formed or a gaseous substance (E2) forming said gaseous substance (E) during the above film formation step (b), thus exposing the surface for deposited film growth to said gaseous substance (E) and thereby effecting an etching action to conduct crystal growth preferentially in a specific face direction.
摘要翻译：一种形成沉积膜的方法包括以下步骤：（a）在其形成用于形成沉积膜的成膜空间中的表面上均匀地布置具有晶体取向性的基板; （b）向所述成膜空间引入由含有硅和卤素的化合物（SX）分解形成的活化物质（A）和由用于成膜的化学物质（B））形成的活化物质（B）与所述活化物质（A）相互反应，从而允许物质彼此化学反应，从而在上述基材上形成沉积膜; 和（c）在上述成膜步骤（b）中向所述成膜空间引入对所形成的沉积膜上具有蚀刻作用的气态物质（E）或形成所述气态物质（E）的气态物质（E2）从而将用于沉积膜生长的表面暴露于所述气态物质（E），从而进行蚀刻作用以优先在特定的面方向进行晶体生长。

45. 外观设计

USD349484S Double capacity battery for portable personal computer 失效
公开(公告)号：USD349484S
公开(公告)日：1994-08-09
申请号：US6820
申请日：1993-04-08
申请人： Hiroyuki Kuzumoto , Masashi Odagiri , Motoharu Yamaguchi , Akira Sakai
设计人： Hiroyuki Kuzumoto , Masashi Odagiri , Motoharu Yamaguchi , Akira Sakai

46. 发明授权

US5246886A Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus 失效
标题翻译：通过生长Ge晶体核在基底上沉积含硅多晶膜的方法
公开(公告)号：US5246886A
公开(公告)日：1993-09-21
申请号：US903939
申请日：1992-06-26
申请人： Akira Sakai , Shunichi Ishihara , Isamu Shimizu
发明人： Akira Sakai , Shunichi Ishihara , Isamu Shimizu
IPC分类号： H01L21/20 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/786 , H01L31/18
CPC分类号： H01L31/1812 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02658 , H01L21/3065 , Y02E10/50
摘要： A process for forming a silicon-containing polycrystalline film on a substrate by a chemical vapor deposition method, said process comprises the steps of:(a) forming a thin film comprising silicon and germanium atoms on said substrate,(b) subjecting said thin film to etching treatment so that a crystalline nucleus comprising germanium atoms as the main constituent remains on the surface of said substrate, and(c) growing said crystalline nucleus to thereby form a silicon-containing polycrystalline film on said substrate.
摘要翻译：一种通过化学气相沉积法在衬底上形成含硅多晶膜的方法，所述方法包括以下步骤：（a）在所述衬底上形成包含硅和锗原子的薄膜，（b）使所述薄膜以使得以锗原子为主要成分的晶核保留在所述基板的表面上，（c）生长所述晶核，从而在所述基板上形成含硅多晶膜。

47. 发明授权

US5227222A In-mold decorated illumination panel 失效
标题翻译：模内装饰照明面板
公开(公告)号：US5227222A
公开(公告)日：1993-07-13
申请号：US823091
申请日：1992-01-21
申请人： Yasuaki Ogawa , Yasushi Takeda , Akira Sakai , Takejirou Takeda , Akihiro Nakamura , Hiroyuki Miyaguchi
发明人： Yasuaki Ogawa , Yasushi Takeda , Akira Sakai , Takejirou Takeda , Akihiro Nakamura , Hiroyuki Miyaguchi
IPC分类号： B29C45/00 , B29C45/14 , B44C3/04 , B44C5/04 , B60K37/00
CPC分类号： B44C5/04 , B29C45/0013 , B29C45/0025 , B29C45/14811 , B44C3/048 , B60K37/00 , B29C2045/14844 , B29C2045/14893 , B29K2511/14 , B29L2031/3008 , Y10T428/1414 , Y10T428/24802 , Y10T428/26 , Y10T428/269 , Y10T428/31507 , Y10T428/31935
摘要： An in-mold decorated illumination panel including an indicator sheet, an ink printed layer formed on a back surface of the indicator sheet, the ink printed layer having a printed indicator portion, and a molded layer formed on a back surface of the ink printed layer by injection molding, wherein the printed indicator portion is illuminated from the back surface of the ink printed layer to effect indication of the printed indicator portion on a front surface of the indicator sheet. An ink dissolution preventing sheet is interposed between the ink printed layer and the molded layer for preventing ink of the printed indicator portion from being dissolved away by pressure of a molding material in the injection molding. A shrinkage adjusting material for adjusting molding shrinkage of the panel is mixed in the molded layer with a predetermined content such that a shrinkage rate of the molded layer becomes substantially equal to a shrinkage rate of the indicator sheet after the injection molding, whereby warping of the panel after the injection molding is prevented.
摘要翻译：包括指示片的模内装饰照明面板，形成在指示片的背面上的油墨印刷层，具有印刷指示部的油墨印刷层和形成在油墨印刷层的背面上的成型层通过注射成型，其中印刷的指示器部分从油墨印刷层的背面被照射，以指示在指示片的前表面上的印刷的指示部分。在油墨印刷层和模塑层之间插入油墨溶解防止片，用于防止印刷指示器部分的油墨在注射成型中被成型材料的压力溶解掉。用于调节面板的收缩率的收缩调节材料以预定含量混合在模制层中，使得模制层的收缩率变得基本等于注射成型后指示片的收缩率，从而使防止注射成型后的面板。

48. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

49. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

50. 发明授权

US4842897A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4842897A
公开(公告)日：1989-06-27
申请号：US947036
申请日：1986-12-29
申请人： Eiji Takeuchi , Jun-Ichi Hanna , Isamu Shimizu , Masaaki Hirooka , Akira Sakai , Masao Ueki
发明人： Eiji Takeuchi , Jun-Ichi Hanna , Isamu Shimizu , Masaaki Hirooka , Akira Sakai , Masao Ueki
IPC分类号： C23C16/452 , H01L21/205
CPC分类号： H01L21/02505 , C23C16/452 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.
摘要翻译：一种通过向反应空间中引入用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的特性的气态卤素氧化剂以在其间进行化学接触从而形成多个前体，其包括在激发态的前体，并且在预先位于成膜空间中的基底上形成所述沉积膜，所述膜形成空间与所述反应空间空间连通，使用这些前体的至少一种前体作为所述沉积的构成元素的进料源所述方法包括增加相对于引入所述反应空间的所述气态卤素氧化剂的量引入的所述气态原料的量的比例的步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式