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    • 34. 发明授权
    • Reconfigurable logic automata
    • 可重构逻辑自动机
    • US08766665B2
    • 2014-07-01
    • US13226484
    • 2011-09-06
    • David Allen DalrympleErik DemaineNeil GershenfeldForrest GreenAra Knaian
    • David Allen DalrympleErik DemaineNeil GershenfeldForrest GreenAra Knaian
    • H03K19/173H03K19/177
    • H03K19/173G06F7/388H03K19/1737H03K19/17728H03K19/17736H03K19/1774H03K19/17748
    • A family of reconfigurable asynchronous logic elements that interact with their nearest neighbors permits reconfigurable implementation of circuits that are asynchronous at the bit level. A reconfigurable asynchronous logic cell comprises a set of one-bit buffers for communication with at least one neighboring cell, each buffer capable of having several states and configured for receiving input state tokens from neighboring cells and for transferring output state tokens to neighboring cells, and a one-bit processor configured to perform a logic operation utilizing received tokens as inputs and to produce an output token reflecting the result of the logic operation, wherein the logic operation and the functional configuration of the buffers are reconfigurably programmable. A reconfigurable logic circuit comprises a plurality of reconfigurable logic cells that compute by locally passing state tokens and are reconfigured by the directed shifting of programming instructions through neighboring logic cells.
    • 与其最近的邻居交互的可重新配置的异步逻辑元件系列允许在位级异步的电路的可重构实现。 可重新配置的异步逻辑单元包括一组用于与至少一个相邻单元进行通信的缓冲器,每个缓冲器能够具有多个状态并被配置用于从相邻小区接收输入状态令牌并将输出状态令牌传送到相邻小区,以及 配置为执行利用接收的令牌作为输入的逻辑操作并产生反映逻辑操作的结果的输出令牌的一位处理器,其中缓冲器的逻辑操作和功能配置可重新配置地可编程。 可重配置逻辑电路包括多个可重构逻辑单元,其通过本地通过状态令牌来计算,并且通过相邻逻辑单元的编程指令的定向移位来重新配置。
    • 35. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08760931B2
    • 2014-06-24
    • US14033924
    • 2013-09-23
    • Semiconductor Engery Laboratory Co., Ltd.
    • Yasuhiko TakemuraShunpei Yamazaki
    • G11C11/34G11C16/06
    • H03K19/0013H01L27/0629H01L29/7869H01L2924/0002H03K17/161H03K19/173H03K19/17724H03K19/17736H03K19/1776H03K19/17772H03K19/17784H01L2924/00
    • It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.
    • 本发明的目的是提供能够降低功耗的半导体装置。 另一个目的是提供使用诸如可编程逻辑器件(PLD)之类的编程单元的高度可靠的半导体器件。 根据基本块之间的连接配置的变化,改变基本块的供电电压。 也就是说,当基本块之间的连接结构使得基本块不对电路有贡献时,停止向该基本块提供电源电压。 此外,使用使用使用氧化物半导体形成沟道形成区域的场效应晶体管形成的编程单元来控制对基本块的电源电压的供给,场效应晶体管具有极低的截止电流或极低 漏电流。
    • 37. 发明授权
    • Programmable/re-programmable device in high-k metal gate MOS
    • 高k金属门MOS中的可编程/可重新编程器件
    • US08681573B2
    • 2014-03-25
    • US13870598
    • 2013-04-25
    • Intel Corporation
    • Walid M. HafezAnisur RahmanChia-Hong Jan
    • G11C7/22
    • G11C7/00G11C17/16G11C17/18H03K19/173
    • Techniques and circuitry are disclosed for implementing non-volatile storage that exploit bias temperature instability (BTI) effects of high-k/metal-gate n-type or p-type metal oxide semiconductor (NMOS or PMOS) transistors. A programmed bitcell of, for example, a memory or programmable logic circuit exhibits a threshold voltage shift resulting from an applied programming bias used to program bitcells. In some cases, applying a first programming bias causes the device to have a first state, and applying a second programming bias causes the device to have a second state that is different than the first state. Programmed bitcells can be erased by applying an opposite polarity stress, and re-programmed through multiple cycles. The bitcell configuration can be used in conjunction with column/row select circuitry and/or readout circuitry, in accordance with some embodiments.
    • 公开了用于实现利用高k /金属栅极n型或p型金属氧化物半导体(NMOS或PMOS)晶体管的偏置温度不稳定性(BTI)效应的非易失性存储器的技术和电路。 例如,存储器或可编程逻辑电路的编程位单元表现出由用于编程位单元的应用编程偏置产生的阈值电压偏移。 在一些情况下,施加第一编程偏置使得器件具有第一状态,并且施加第二编程偏置使得器件具有与第一状态不同的第二状态。 可以通过施加相反的极性应力来擦除编程的位单元,并通过多个周期重新编程。 根据一些实施例,位单元配置可以与列/行选择电路和/或读出电路结合使用。