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31. 发明申请

US20080169463A1 Organic light emitting device and manufacturing method thereof 有权
标题翻译：有机发光器件及其制造方法
公开(公告)号：US20080169463A1
公开(公告)日：2008-07-17
申请号：US11982169
申请日：2007-10-31
申请人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
发明人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/1214 , H01L27/1251 , H01L27/1274 , H01L27/3244 , H01L29/41733 , H01L29/458 , H01L29/78666
摘要： An organic light emitting device includes a substrate, first and second ohmic contacts formed on the substrate, a driving semiconductor formed on the substrate and the first and second ohmic contacts and including polysilicon, a driving input electrode electrically connected to the first ohmic contact, a driving output electrode electrically connected to the second ohmic contact, a first gate insulating layer formed on the driving semiconductor, the driving input electrode, and the driving output electrode, and a driving control electrode formed on the first gate insulating layer and overlapping the driving semiconductor.
摘要翻译：有机发光器件包括衬底，形成在衬底上的第一和第二欧姆触点，形成在衬底上的驱动半导体和第一和第二欧姆触点并且包括多晶硅，电连接到第一欧姆接触的驱动输入电极，电连接到第二欧姆接触的驱动输出电极，形成在驱动半导体上的第一栅极绝缘层，驱动输入电极和驱动输出电极;以及驱动控制电极，形成在第一栅极绝缘层上并与驱动半导体。

32. 发明申请

US20080111134A1 SEMICONDUCTOR DEVICE, METHOD OF MAKING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：半导体器件，其制造方法和液晶显示器件
公开(公告)号：US20080111134A1
公开(公告)日：2008-05-15
申请号：US11969488
申请日：2008-01-04
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

33. 发明申请

US20080105875A1 Method For Forming Pattern, Thin Film Transistor, Display Device And Method For Manufacturing The Same, And Television Device 失效
标题翻译：成型方法，薄膜晶体管，显示装置及其制造方法及电视装置
公开(公告)号：US20080105875A1
公开(公告)日：2008-05-08
申请号：US10574616
申请日：2005-03-16
申请人： Shinji Maekawa , Gen Fujii , Hiroko Yamamoto
发明人： Shinji Maekawa , Gen Fujii , Hiroko Yamamoto
IPC分类号： H01L29/04 , G03F7/00
CPC分类号： H01L29/78678 , G03F7/70791 , H01L21/76838 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675
摘要： A method for forming a pattern according to the invention comprises the steps of: forming a mask over a substrate having light-transmitting properties; forming a first region having a substance including a light-absorbing material over the substrate and the mask; forming a second region by irradiating the substance with light having a wavelength which is absorbable by the light-absorbing material through the substrate to modify a part of the substance surface; and forming a pattern by discharging a compound including a pattern forming material to the second region.
摘要翻译：根据本发明的形成图案的方法包括以下步骤：在具有透光性的基板上形成掩模; 在所述基板和所述掩模上形成具有包含光吸收材料的物质的第一区域; 通过用光吸收材料吸收的波长的光照射物质形成第二区域，以改变物质表面的一部分; 以及通过将包括图案形成材料的化合物排出到第二区域来形成图案。

34. 发明授权

US07223996B2 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors 失效
标题翻译：电气装置，矩阵装置，电光显示装置和具有薄膜晶体管的半导体存储器
公开(公告)号：US07223996B2
公开(公告)日：2007-05-29
申请号：US11139494
申请日：2005-05-31
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L31/036
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/136245 , H01L27/10873 , H01L29/78603 , H01L29/78609 , H01L29/78666 , H01L29/78675 , H01L29/78696
摘要： A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
摘要翻译：适于动态激活电光显示装置的电路由薄膜栅极绝缘半导体器件构成。该器件包括仅产生少量漏电流的PMOS TFT。除了动态电路之外，构造包括NMOS和PMOS薄膜晶体管的CMOS电路以驱动动态电路。

35. 发明申请

US20060246638A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060246638A1
公开(公告)日：2006-11-02
申请号：US11380147
申请日：2006-04-25
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toru Mitsuki , Kenji Kasahara , Tamae Takano , Chiho Kokubo , Shunpei Yamazaki , Takeshi Shichi
IPC分类号： H01L21/84
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78666 , H01L29/78684 , H01L2029/7863
摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.
摘要翻译：通过热处理使激光，紫外线或红外线等强光照射而使非晶半导体膜结晶而得到的结晶半导体膜的取向比提高，并且有源区由结晶半导体形成膜和制造半导体器件的方法。在含有硅和锗作为其成分且具有晶体结构的半导体膜中，{101}面达到通过电子反向散射衍射检测的所有晶格面的30％以上。该半导体膜通过使用其中使用硅原子的氢化物，氟化物或氯化物气体，重复频率设定为10kHz以下的等离子体CVD形成含有硅和锗作为其成分的非晶半导体膜，对于间歇放电或脉冲放电，占空比被设定为50％以下，并且在其表面引入促进非晶半导体膜的结晶化的元素，从而使非晶半导体膜在利用引入元素的同时结晶。

36. 发明授权

US07037769B2 Thin film transistor and multilayer film structure and manufacturing method of same 失效
标题翻译：薄膜晶体管和多层膜结构及其制造方法相同
公开(公告)号：US07037769B2
公开(公告)日：2006-05-02
申请号：US10890759
申请日：2004-07-14
申请人： Peter M. Fryer , Robert L. Wisnieff , Takatoshi Tsujimura
发明人： Peter M. Fryer , Robert L. Wisnieff , Takatoshi Tsujimura
IPC分类号： H01L21/00 , G02F1/136
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1292 , H01L29/41733 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78666
摘要： The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.
摘要翻译：本发明涉及一种薄膜晶体管（及相关的多层结构），其包括：以绝缘基板11上方的特定间隔设置并通过印刷和电镀形成的源极和漏极14和15; 为源极和漏极14和15设置的a-Si膜16; 层叠在a-Si膜16上的栅极绝缘膜17; 以及层叠在栅极绝缘膜17上并通过印刷和电镀形成的栅电极18。 a-Si膜16和栅极绝缘膜17具有均匀地延伸超过栅电极18的尺寸的偏移区域20。

37. 发明申请

US20050214990A1 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors 失效
标题翻译：电气装置，矩阵装置，电光显示装置和具有薄膜晶体管的半导体存储器
公开(公告)号：US20050214990A1
公开(公告)日：2005-09-29
申请号：US11139494
申请日：2005-05-31
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1362 , G02F1/1368 , G09F9/35 , H01L21/00 , H01L21/02 , H01L21/336 , H01L21/77 , H01L21/8242 , H01L21/8244 , H01L21/84 , H01L27/00 , H01L27/02 , H01L27/11 , H01L27/12 , H01L29/76 , H01L29/78 , H01L29/786 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/136245 , H01L27/10873 , H01L29/78603 , H01L29/78609 , H01L29/78666 , H01L29/78675 , H01L29/78696
摘要： A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
摘要翻译：适于动态激活电光显示装置的电路由薄膜栅极绝缘半导体器件构成。该器件包括仅产生少量漏电流的PMOS TFT。除了动态电路之外，构造包括NMOS和PMOS薄膜晶体管的CMOS电路以驱动动态电路。

38. 发明授权

US06903372B1 Semiconductor device, method of making the same and liquid crystal display device 有权
标题翻译：半导体装置及其制造方法以及液晶显示装置
公开(公告)号：US06903372B1
公开(公告)日：2005-06-07
申请号：US09698274
申请日：2000-10-30
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

39. 发明申请

US20050035343A1 Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same 有权
标题翻译：栅极与体薄膜晶体管短路，其制造方法以及包括其的显示器
公开(公告)号：US20050035343A1
公开(公告)日：2005-02-17
申请号：US10910350
申请日：2004-08-04
申请人： Byoung-Deog Choi , Won-Sik Kim , Myeong-Seob So
发明人： Byoung-Deog Choi , Won-Sik Kim , Myeong-Seob So
IPC分类号： G09F9/30 , H01L27/12 , H01L27/32 , H01L29/78 , H01L29/786 , H01L29/06
CPC分类号： H01L29/78666 , H01L27/12 , H01L29/783 , H01L29/7841 , H01L29/78609 , H01L29/78675
摘要： A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.
摘要翻译：一种TFT，包括栅极金属层，掺杂有第一极性的掺杂剂的体层，掺杂有第二极性的掺杂剂的源极层和漏极层，形成在源极层和漏极层之间的半导体层，以及耦合栅极金属层和主体层的接触。

40. 发明申请

US20050034834A1 Method for manufacturing golf club head 审中-公开
标题翻译：制造高尔夫球杆头的方法
公开(公告)号：US20050034834A1
公开(公告)日：2005-02-17
申请号：US10910305
申请日：2004-08-04
申请人： Chun-Yung Huang
发明人： Chun-Yung Huang
IPC分类号： G09F9/30 , H01L27/12 , H01L27/32 , H01L29/78 , H01L29/786 , B22C9/04
CPC分类号： H01L29/783 , H01L27/12 , H01L29/7841 , H01L29/78609 , H01L29/78666 , H01L29/78675
摘要： A method for manufacturing a golf club head includes producing a main body wax pattern and an accessory wax pattern. An engaging portion of the main body wax pattern is engaged with an engaging portion of the accessory wax pattern, with a gap being defined between the first engaging portion and the second engaging portion. Then, a low-viscosity volatile solvent is filled into the gap for forming a club head wax pattern by means of bonding of dissolved wax materials of the main body wax pattern and the accessory wax pattern. The club head wax pattern is impregnated in slurry to form a ceramic shell, which is then heated the ceramic shell to release wax in the ceramic shell. Finally, a casting procedure is carried out to form a club head casting in the ceramic shell.
摘要翻译：制造高尔夫球杆头的方法包括制造主体蜡图案和辅助蜡图案。主体蜡图案的接合部分与附件蜡图案的接合部分接合，在第一接合部分和第二接合部分之间限定间隙。然后，通过粘合主体蜡图案和附属蜡图案的溶解蜡材料，将一种低粘度挥发性溶剂填充到用于形成球杆头蜡图案的间隙中。将球杆头蜡图案浸渍在浆料中以形成陶瓷壳，然后将陶瓷壳加热以在陶瓷壳中释放蜡。最后，进行铸造过程以在陶瓷壳中形成球杆头铸件。

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