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31. 发明授权

US09159783B2 Semiconductor device and substrate with chalcogen doped region 有权
标题翻译：半导体器件和具有硫属元素掺杂区的衬底
公开(公告)号：US09159783B2
公开(公告)日：2015-10-13
申请号：US13709786
申请日：2012-12-10
申请人： Infineon Technologies AG
发明人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
IPC分类号： H01L29/06 , H01L21/223 , H01L21/225 , H01L21/265 , H01L29/66 , H01L29/78 , H01L29/08 , H01L29/10 , H01L29/167
CPC分类号： H01L29/0607 , H01L21/223 , H01L21/2253 , H01L21/26506 , H01L21/26513 , H01L29/0843 , H01L29/0847 , H01L29/0878 , H01L29/1016 , H01L29/167 , H01L29/66136 , H01L29/66348 , H01L29/66363 , H01L29/66712 , H01L29/66909 , H01L29/7397 , H01L29/7802
摘要： A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.
摘要翻译：半导体衬底包括与第一侧相对的第一侧和第二侧。半导体材料在第一和第二侧之间延伸并且没有有源器件区域。半导体材料具有第一区域和第二区域。第一区域从第一侧向深度延伸到半导体材料中，并且包括提供第一区域的基极掺杂浓度的硫族化合物掺杂剂原子。第二区域从第一区域延伸到第二侧并且没有基底掺杂。此外，提供功率半导体部件。

32. 发明授权

US08981482B2 ESD protection structure 有权
标题翻译： ESD保护结构
公开(公告)号：US08981482B2
公开(公告)日：2015-03-17
申请号：US13241079
申请日：2011-09-22
申请人： Xiang Gao
发明人： Xiang Gao
IPC分类号： H01L29/772 , H01L27/02 , H01L29/08 , H01L29/10 , H01L29/74 , H01L29/06 , H01L29/749 , H01L29/78
CPC分类号： H01L27/027 , H01L29/0649 , H01L29/0834 , H01L29/1016 , H01L29/7436 , H01L29/749 , H01L29/7835
摘要： A device used as an ESD protection structure, which is a modified N-type LDMOS device is disclosed. A conventional LDMOS includes only one N-type heavily doped region as a drain in an N-type lightly doped region (11), while the device of the invention includes a P-type heavily doped region (22) in an N-type lightly doped region (11), dividing the N-type heavily doped region into two N-type heavily doped regions (21, 23) unconnected and independent to each other. The N-type heavily doped region (21) close to the gate (14) has no picking-up terminal. The N-type heavily doped region (23) away from the gate (14) together with the P-type heavily doped region (22) is picked up and connected to an input/output bonding pad.
摘要翻译：公开了一种用作ESD保护结构的器件，其是修改的N型LDMOS器件。常规LDMOS在N型轻掺杂区域（11）中仅包括一个N型重掺杂区域作为漏极，而本发明的器件包括N型轻掺杂区域中的P型重掺杂区域（22）掺杂区域（11），将N型重掺杂区域划分成彼此不连接和独立的两个N型重掺杂区域（21,23）。接近栅极（14）的N型重掺杂区域（21）没有拾取端子。与P型重掺杂区域（22）一起离开栅极（14）的N型重掺杂区域（23）被拾取并连接到输入/输出接合焊盘。

33. 发明授权

US08841727B1 Circuit with electrostatic discharge protection 有权
标题翻译：电路具有静电放电保护
公开(公告)号：US08841727B1
公开(公告)日：2014-09-23
申请号：US13620161
申请日：2012-09-14
申请人： Andrew Walker , Helmut Puchner , Sai Dhanraj , Kevin Jang
发明人： Andrew Walker , Helmut Puchner , Sai Dhanraj , Kevin Jang
IPC分类号： H01L23/62
CPC分类号： H01L29/7436 , H01L29/0649 , H01L29/0657 , H01L29/0847 , H01L29/0886 , H01L29/1016 , H01L29/41758 , H01L29/42308 , H01L29/42368 , H01L29/7816 , H01L29/7835
摘要： A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.
摘要翻译：描述了具有静电放电保护的电路。在一种情况下，电路包括被配置为在静电放电事件期间保护连接到电路节点的部件的触发装置，触发装置包括插入在栅氧化层和延伸漏极区之间的隔离结构。靠近隔离结构的延伸漏极区域的一部分基本上是无金属的。

34. 发明申请

US20110180870A1 HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES 有权
标题翻译： BiCMOS工艺技术中的高压SCRMOS
公开(公告)号：US20110180870A1
公开(公告)日：2011-07-28
申请号：US12694808
申请日：2010-01-27
申请人： Sameer P. PENDHARKAR
发明人： Sameer P. PENDHARKAR
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L29/66393 , H01L27/0262 , H01L29/063 , H01L29/0649 , H01L29/0692 , H01L29/0834 , H01L29/1016 , H01L29/402 , H01L29/456 , H01L29/7436 , H01L29/749
摘要： An integrated circuit having an SCRMOS transistor with a RESURF region around the drain region and SCR terminal. The RESURF region is the same conductivity type as the drift region and is more heavily doped than the drift region. An SCRMOS transistor with a RESURF region around the drain region and SCR terminal. A process of forming an integrated circuit having an SCRMOS transistor with a RESURF region around the drain region and SCR terminal.
摘要翻译：具有SCRMOS晶体管的集成电路，其具有围绕漏极区域和SCR端子的RESURF区域。 RESURF区域是与漂移区域相同的导电类型，并且比漂移区域更重掺杂。一个SCRMOS晶体管，在漏极区域和SCR端子周围具有RESURF区域。形成具有SCRMOS晶体管的集成电路的工艺，其具有围绕漏极区域和SCR端子的RESURF区域。

35. 发明授权

US06723586B1 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor 失效
标题翻译：晶闸管提供集成电路整流恢复时间保护及其生产方法
公开(公告)号：US06723586B1
公开(公告)日：2004-04-20
申请号：US10018592
申请日：2002-04-01
申请人： Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21332
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/32 , H01L29/7428
摘要： A thyristor includes a semiconductor body having an anode-side base zone of a first conductance type, and having a cathode-side base zone of the second, opposite conductance type, and has cathode-side and anode-side emitter zones. An anode-side defect zone is included within the anode-side base zone, in which the free charge carriers have a reduced life, with a predetermined thickness of at least 20 &mgr;m. The defect zone may be produced by anode-side irradiation of predetermined regions of the semiconductor body with charged particles, and with heat treatment of the semiconductor body in order to stabilize the defect zone.
摘要翻译：晶闸管包括具有第一导电类型的阳极侧基极区和具有第二相反电导型的阴极侧基极区并具有阴极侧和阳极侧发射极区的半导体本体。阳极侧缺陷区域包括在阳极侧基区内，其中游离载流子具有降低的寿命，预定厚度至少为20μm。可以通过用带电粒子的半导体本体的预定区域的阳极侧照射以及半导体本体的热处理以使缺陷区域稳定来产生缺陷区域。

36. 发明授权

US06489187B2 Method for setting the breakover voltage of a thyristor 有权
公开(公告)号：US06489187B2
公开(公告)日：2002-12-03
申请号：US09935359
申请日：2001-08-22
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide
IPC分类号： H01L21332
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/32 , H01L29/7428
摘要： The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead ignition is increased or reduced. Doping profile changes made in the cathode side half of the anode side base provide effective results, e.g. in the vicinity of the pn junction between the anode side and the cathode side base. The helium ions generate acceptor-type states that lower the effective n doping.

37. 发明授权

US06472692B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06472692B1
公开(公告)日：2002-10-29
申请号：US09566737
申请日：2000-05-09
申请人： Katsumi Satoh , Kazuhiro Morishita , Shinji Koga
发明人： Katsumi Satoh , Kazuhiro Morishita , Shinji Koga
IPC分类号： H01L2974
CPC分类号： H01L29/744 , H01L29/1016
摘要： To suppress spike voltage generated at turn-off operation, a semiconductor device according to the invention comprises a first region composed of a first conductor, a second region composed of a second conductor formed on top of the first region, a third region composed of the first conductor formed on top of the second region and a fourth region composed of the second conductor formed on top of the third region. The second region is comprised of a depletion-layer forming auxiliary layer having a short lifetime and formed in the vicinity of the third region, a tail-current suppression layer having a shorter lifetime than that of the depletion-layer forming auxiliary layer and formed in the vicinity of the first region and a depletion-layer forming suppression layer having a longer lifetime than that of the depletion-layer forming auxiliary layer and formed between the depletion-layer forming auxiliary layer and the tail-current suppression layer.
摘要翻译：为了抑制在关断操作时产生的尖峰电压，根据本发明的半导体器件包括由第一导体构成的第一区域，由形成在第一区域的顶部上的第二导体构成的第二区域，由第一导体形成在第二区域的顶部上，第四区域由形成在第三区域的顶部上的第二导体构成。第二区域由具有短寿命且在第三区域附近形成的耗尽层形成辅助层构成，具有比耗尽层形成辅助层的寿命短的尾电流抑制层，并形成在形成在耗尽层形成辅助层和尾流抑制层之间的第一区域附近和耗尽层形成抑制层的寿命比耗尽层形成辅助层的寿命更长。

38. 发明授权

US06441408B2 Power semiconductor component for high reverse voltages 有权
标题翻译：用于高反向电压的功率半导体元件
公开(公告)号：US06441408B2
公开(公告)日：2002-08-27
申请号：US09761241
申请日：2001-01-17
申请人： Alfred Porst , Helmut Strack , Anton Mauder , Hans-Joachim Schulze , Heinrich Brunner , Josef Bauer , Reiner Barthelmess
发明人： Alfred Porst , Helmut Strack , Anton Mauder , Hans-Joachim Schulze , Heinrich Brunner , Josef Bauer , Reiner Barthelmess
IPC分类号： H01L3300
CPC分类号： H01L29/1016 , H01L29/7395 , H01L29/7455 , H01L29/749
摘要： A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.
摘要翻译：功率半导体元件具有停止区域。为了优化功率半导体部件的静态和动态损耗，停止区域具有供体，其具有位于硅的带隙内的至少一个施主电平，并且距离导电带边缘至少200meV 硅。

39. 发明申请

US20020022306A1 Method for setting the breakover voltage of a thyristor 有权
标题翻译：设置晶闸管的断流电压的方法
公开(公告)号：US20020022306A1
公开(公告)日：2002-02-21
申请号：US09935359
申请日：2001-08-22
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide
IPC分类号： H01L021/332
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/32 , H01L29/7428
摘要： The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead ignition is increased or reduced. Doping profile changes made in the cathode side half of the anode side base provide effective results, e.g. in the vicinity of the pn junction between the anode side and the cathode side base. The helium ions generate acceptor-type states that lower the effective n doping.
摘要翻译：完成的晶闸管的有效掺杂分布被改变，氦离子辐射到提供用于触发晶闸管的区域中，使得顶置点火的击穿电压增加或降低。在阴极侧半阳极侧基体上形成的掺杂分布变化提供了有效的结果，例如，在阳极侧和阴极侧基体之间的pn结的附近。氦离子产生降低有效n掺杂的受体型态。

40. 发明授权

US4831423A Semiconductor devices employing conductivity modulation 失效
标题翻译：采用电导率调制的半导体器件
公开(公告)号：US4831423A
公开(公告)日：1989-05-16
申请号：US119304
申请日：1987-11-06
申请人： John M. Shannon
发明人： John M. Shannon
IPC分类号： H01L29/78 , H01L21/331 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/73 , H01L29/732 , H01L29/739
CPC分类号： H01L29/0619 , H01L29/0684 , H01L29/0821 , H01L29/1016 , H01L29/7393
摘要： A semiconductor device, e.g. a lateral DMOS transistor or bipolar transistor, has a main current path (20) extending through a high resistivity body portion (1) of one conductivity type. A minority-carrier injector region (6) which may be of the opposite conductivity type is provided in the body portion (1) in the vicinity of the current path (20) and serves with an applied forward-bias to inject minority charge carriers (16) which are characteristic of the opposite conductivity type into the body portion (1) to modulate the conductivity of the current path (20). In accordance with the invention one or more further regions (8) of the opposite conductivity type are located in the part of the body portion (1) in the vicinity of the current path (20) and within a minority-carrier diffusion length of the injector region (6) and/or of each other. These further regions (8) float at a potential dependant on the minority-carrier injection (16) from the injector region (6) and serve to inject minority charge carries (18) into areas of the body portion (1) remote from the injector region (6) so as to modulate the conductivity of these areas of the current path (20). The floating regions (8) may be located within the spread of a depletion layer (30) from a reverse-biased p-n junction (2) to increase the breakdown voltage of the junction (2). The body portion (1) may be, e.g., a MOST drain drift region or a bipolar transistor collector region or a thyristor base region.
摘要翻译：半导体器件，例如横向DMOS晶体管或双极晶体管具有延伸穿过一种导电类型的高电阻率主体部分（1）的主电流路径（20）。在电流路径（20）附近在主体部分（1）中设置可以具有相反导电类型的少数载流子注入器区域（6），并施加正向偏压以注入少数电荷载流子 16），其特征在于主体部分（1）中的相反导电类型，以调节电流路径（20）的导电性。根据本发明，相反导电类型的一个或多个另外的区域（8）位于电流路径（20）附近的主体部分（1）的部分中，并且位于主体部分（1）的少数载流子扩散长度内注射器区域（6）和/或彼此。这些另外的区域（8）浮动在取决于少数载流子注入（16）的注入区域（6）的电位，并且用于将少数电荷载体（18）注入远离注射器的身体部分（1）的区域区域（6），以便调制电流路径（20）的这些区域的电导率。浮动区域（8）可以位于来自反向偏置p-n结（2）的耗尽层（30）的扩展内，以增加结（2）的击穿电压。主体部分（1）可以是例如MOST漏极漂移区域或双极晶体管集电极区域或晶闸管基极区域。

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