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31. 发明申请

US20080006777A1 LITHOGRAPHY SYSTEM AND ERROR DETECTION METHOD IN SAME 审中-公开
标题翻译： LITHOGRAPHY系统及其错误检测方法
公开(公告)号：US20080006777A1
公开(公告)日：2008-01-10
申请号：US11762498
申请日：2007-06-13
申请人： Hideo INOUE
发明人： Hideo INOUE
IPC分类号： G21K1/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30416
摘要： The lithography system deflects a beam to draw a desired pattern on a sample. The lithography system includes a beam optical system that includes a deflector deflecting a beam, and a driving unit that drives the deflector. The data generation circuit generates control data to control the driving unit according to the patterning data representing the pattern to be drawn. The data output unit processes the control data and outputs it to the driving unit. The data processing circuit comprises a memory that stores the inputted control data, and a control unit specifies a position where a defect of a pattern exists according to defect data as a result of inspection of a defect of a pattern actually drawn on the sample using a defect inspector and selectively stores in the memory the control data that relates to a peripheral area including the position of the defect.
摘要翻译：光刻系统偏转光束以在样品上画出期望的图案。光刻系统包括光束光学系统，其包括偏转光束的偏转器和驱动偏转器的驱动单元。数据产生电路产生控制数据，以根据表示要绘制的图案的图案化数据来控制驱动单元。数据输出单元处理控制数据并将其输出到驱动单元。数据处理电路包括存储输入的控制数据的存储器，并且控制单元根据缺陷数据指定存在图案的缺陷的位置，作为使用实施例1中实际绘制在样品上的图案的缺陷的检查结果缺陷检查器，并且选择性地在存储器中存储与包括缺陷位置的外围区域有关的控制数据。

32. 发明申请

US20050188309A1 Graphical automated machine control and metrology 有权
公开(公告)号：US20050188309A1
公开(公告)日：2005-08-25
申请号：US11115751
申请日：2005-04-27
申请人： David Tasker , Henri Lezec , David Head
发明人： David Tasker , Henri Lezec , David Head
IPC分类号： G06T1/00 , G01Q60/00 , G05B19/4093 , G06F3/00 , G06T3/00 , G09G5/00
CPC分类号： G05B19/40933 , G01N1/286 , G05B2219/36314 , G05B2219/36317 , G05B2219/36325 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/2813 , H01J2237/30416 , H01J2237/30483 , H01J2237/31713 , H01J2237/31745 , H01J2237/31749 , Y02P90/265
摘要： A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.

33. 发明授权

US06646275B2 Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US06646275B2
公开(公告)日：2003-11-11
申请号：US10238759
申请日：2002-09-11
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J3730
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储装置具有第二较高访问速度，从第二存储装置读出点阵图形数据，并且响应于通过消隐从第二存储装置读出的点图形数据产生多个带电粒子束孔径阵列，其中消隐孔阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

34. 发明申请

US20030025088A1 Charged particle beam exposure system and method 失效
公开(公告)号：US20030025088A1
公开(公告)日：2003-02-06
申请号：US10238759
申请日：2002-09-11
申请人： Fujitsu Limited
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J037/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

35. 发明授权

US5920077A Charged particle beam exposure system 失效
标题翻译：带电粒子束曝光系统
公开(公告)号：US5920077A
公开(公告)日：1999-07-06
申请号：US22881
申请日：1998-02-12
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：一种带电粒子束曝光方法，包括以下步骤：产生指示要曝光的图案的点阵图形数据，存储指示要曝光的图案的点，将点图案数据存储在具有第一存取速度的第一存储装置中，传送从第一存储装置到具有第二较高访问速度的第二存储装置的点图形数据从第二存储装置读出点图案数据; 以及响应于通过消隐孔径阵列从第二存储装置读出的点图形数据产生多个带电粒子束。消隐孔径阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

36. 发明授权

US5528048A Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US5528048A
公开(公告)日：1996-06-18
申请号：US404830
申请日：1995-03-15
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储器具有第二较高访问速度，从第二存储设备读出点图案数据，并响应于通过消隐孔径从第二存储设备读出的点图案数据产生多个带电粒子束阵列，其中所述消隐孔阵列包括多个孔，每个孔响应于所述点图案数据而导致与所述孔相关的改变的粒子束的导通和关断。

37. 发明申请

US20180182596A1 CHARGED PARTICLE BEAM APPARATUS AND METHOD FOR CONTROLLING CHARGED BEAM APPARATUS 审中-公开
公开(公告)号：US20180182596A1
公开(公告)日：2018-06-28
申请号：US15850647
申请日：2017-12-21
申请人： HITACHI HIGH-TECH SCIENCE CORPORATION
发明人： Hidekazu SUZUKI
IPC分类号： H01J37/304 , H01J37/244
CPC分类号： H01J37/304 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/30416 , H01J2237/31749
摘要： A charged particle beam apparatus includes: an irradiation unit that irradiates a sample with a charged particle beam; an image formation section that detects a charged particle generated from the sample due to the irradiation with the charged particle beam and forms an image based on a signal obtained by detecting the charged particle; an input reception unit that receives an observation condition; a derivation section that derives second observation parameters proper for the observation condition based on the received observation condition and first observation parameters stored in a storage unit; and a control unit that controls the irradiation unit based on the second observation parameters.

38. 发明申请

US20160284579A1 PROCESS WINDOW ANALYSIS 审中-公开
标题翻译：过程窗口分析
公开(公告)号：US20160284579A1
公开(公告)日：2016-09-29
申请号：US14666183
申请日：2015-03-23
申请人： Applied Materials Israel Ltd.
发明人： Idan KAIZERMAN , Yotam SOFER
IPC分类号： H01L21/67 , H01J37/22 , H01L21/66 , H01J37/28
CPC分类号： H01L22/12 , G03F7/70558 , G03F7/70641 , G03F7/7065 , H01J37/222 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/221 , H01J2237/2817 , H01J2237/30416 , H01J2237/30433 , H01J2237/30461 , H01J2237/31798 , H01L22/20
摘要： A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.
摘要翻译：一种用于处理分析的方法包括：使用第一检查模式，使用不同的各组工艺参数，获得关于其上形成有预定图案特征的多个实例的基板的第一检查数据。处理在第一检查数据中识别的缺陷的特征，以便选择第一组缺陷位置，其中第一检查数据表示处理参数对缺陷的影响。使用具有比第一检查模式更精细的分辨率的第二检查模式在第一组中的位置获取第二检查数据。分析出现在第二检查数据中的缺陷，以从第一组位置内选择第二组位置，其中第二检查数据表示过程参数的最佳范围。

39. 发明授权

US08624206B2 Pattern modification schemes for improved FIB patterning 有权
标题翻译：用于改进FIB图案化的图案修改方案
公开(公告)号：US08624206B2
公开(公告)日：2014-01-07
申请号：US13655129
申请日：2012-10-18
申请人： FEI Company
发明人： Tom Miller , Gene Mirro , Cornelis Sander Kooijman , Hendrik Jan de Vos
IPC分类号： H01J3/26
CPC分类号： H01J3/26 , H01J37/1472 , H01J37/1477 , H01J37/3026 , H01J2237/1504 , H01J2237/1518 , H01J2237/1526 , H01J2237/30416 , H01J2237/3045 , H01J2237/30461
摘要： An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.
摘要翻译：引导带电粒子束的改进方法，其补偿带电粒子通过改变一个或多个偏转器信号而穿过系统所需要的时间。根据本发明的一个实施例，在数模（D / A）转换之前，将数字滤波器应用于扫描图案，以便减少或消除可能由TOF误差引起的过拍影响。在其他实施例中，也可以使用模拟滤波器或具有较低带宽的信号放大器的使用来补偿TOF误差。通过改变扫描图案，可以显着减少或消除超拍效果。

40. 发明授权

US08426830B2 Focused ion beam apparatus, sample processing method using the same, and computer program for focused ion beam processing 有权
标题翻译：聚焦离子束装置，使用其的样品处理方法和用于聚焦离子束处理的计算机程序
公开(公告)号：US08426830B2
公开(公告)日：2013-04-23
申请号：US12613107
申请日：2009-11-05
申请人： Makoto Sato , Masahiro Kiyohara , Junichi Tashiro
发明人： Makoto Sato , Masahiro Kiyohara , Junichi Tashiro
IPC分类号： G21G4/00
CPC分类号： H01J37/3056 , H01J37/222 , H01J37/304 , H01J2237/221 , H01J2237/24507 , H01J2237/30416 , H01J2237/31745 , H01J2237/31749
摘要： A focused ion beam apparatus includes: a focused ion beam irradiating mechanism configured to irradiate a sample with a focused ion beam; a detector configured to detect a secondary charged particle generated by irradiating the sample with the focused beam; an image generating unit configured to generate an sample image of the sample; a processing area setting unit configured to set a processing area image including a plurality of pixels corresponding to positions of irradiation of the focused ion beam on the sample image; a position of irradiation setting unit configured to set coordinates of the pixels included in the processing area image; a beam setting unit configured to set a dose amount of the focused ion beam irradiated from the focused ion beam irradiating mechanism according to intensities; and an interpolating unit configured to perform an interpolating process on the processing area image.
摘要翻译：聚焦离子束装置包括：聚焦离子束照射机构，被配置为用聚焦离子束照射样品; 检测器，被配置为检测通过用所述聚焦光束照射所述样品而产生的二次带电粒子; 图像生成单元，被配置为生成样本的样本图像; 处理区域设定单元，被配置为将包括与所述聚焦离子束的照射位置对应的多个像素的处理区域图像设置在所述样本图像上; 被配置为设置包括在处理区域图像中的像素的坐标的照射设置单元的位置; 光束设定单元，被配置为根据强度设定从所述聚焦离子束照射机构照射的聚焦离子束的剂量; 以及被配置为对所述处理区域图像执行内插处理的内插单元。

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