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31. 发明授权

US06651133B2 Method and data storage device for writing a minimum number of memory cells in a memory device 失效
标题翻译：用于将最少数量的存储器单元写入存储器件的方法和数据存储装置
公开(公告)号：US06651133B2
公开(公告)日：2003-11-18
申请号：US10253218
申请日：2002-09-23
申请人： Christopher S. Moore , Roger W. March , Daniel T. Brown
发明人： Christopher S. Moore , Roger W. March , Daniel T. Brown
IPC分类号： G06F1200
CPC分类号： G06F11/1008 , G06F3/0601 , G06F3/08 , G06F2003/0697 , G11C17/00 , Y10S707/99934 , Y10S707/99943 , Y10S707/99953 , Y10S707/99956
摘要： The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.
摘要翻译：本文描述的优选实施例提供了一种用于其的存储器件和方法。在一个优选实施例中，提出了一种使用文件系统动态地响应所指示的第一和第二一次写入存储器件的最小数量的存储器单元的可变性的方法。在另一个优选实施例中，描述了一种用于重写存储器件中的数据的方法，其中在写入破坏性图案之后忽略错误代码。在另一个优选实施例中，提出了一种方法，其中在已经为要存储在存储器件中的文件分配存储器块之后，确定该块中的可用线。另一个优选实施例涉及在用于文件结构或文件系统结构的存储器装置中保留至少一个存储器单元。还提供了一种存储器件，其中至少两个文件系统的文件系统结构存储在同一个存储器分区中。此外，公开了用于永久地防止存储在存储器件中的数据的修改和用于识别存储数据的存储单元的方法。

32. 发明申请

US20030210567A1 Intermesh memory device 失效
标题翻译： Intermesh内存设备
公开(公告)号：US20030210567A1
公开(公告)日：2003-11-13
申请号：US10141609
申请日：2002-05-07
发明人： Andrew Koll , Peter Fricke , Andrew L. Van Brocklin
IPC分类号： G11C011/34 , G11C007/02
CPC分类号： G11C17/00 , G11C5/025
摘要： An intermesh memory device includes memory components that each have a determinable resistance value and electronic switches that each control current through one or more of the memory components such that a potential is applied to the memory components. A first electronic switch of the intermesh memory device is electrically coupled to an input of a memory component and a second electronic switch is electrically coupled to an output of the memory component. The first electronic switch and the second electronic switch are configured together to apply a potential to the memory component.
摘要翻译：互相间存储器件包括每个具有可确定电阻值的存储器组件和每个通过一个或多个存储器组件控制电流的电子开关，使得将电位施加到存储器组件。互连存储器件的第一电子开关电耦合到存储器组件的输入端，而第二电子开关电耦合到存储器组件的输出端。第一电子开关和第二电子开关被配置在一起以向存储器组件施加电位。

33. 发明授权

US06584541B2 Method for storing digital information in write-once memory array 有权
标题翻译：用于将数字信息首先存储在可重写数字存储器中然后在一次写入存储器阵列中的方法
公开(公告)号：US06584541B2
公开(公告)日：2003-06-24
申请号：US09727229
申请日：2000-11-30
申请人： David R. Friedman , Derek J. Bosch , Christopher R. Moore , Joseph J. Tringali , Michael A. Vyvoda
发明人： David R. Friedman , Derek J. Bosch , Christopher R. Moore , Joseph J. Tringali , Michael A. Vyvoda
IPC分类号： G06F1314
CPC分类号： G11C17/00
摘要： An acquisition/playback device and a memory device including a solid-state write-once memory array are used to acquire and display digital information such as digital images, voice, music, or the like. Prior to display or other presentation, the digital information is stored in a re-writable memory. After the digital information has been displayed or otherwise presented to the user for review, the user then elects whether to store the digital information in the write-once memory array. Depending upon the user election, the digital information is either stored in the write-once memory array, or erased from the re-writable memory without being stored in the write-once memory array. In this way the limited storage capacity of the write-once memory array is preserved for digital information that is of long-term interest to the user. Similarly, an acquisition/playback device itself can review the digital information stored in the re-writable memory and determine whether to commit that file to the write-once memory or to discard the file from the re-writable memory.
摘要翻译：使用包括固态一次写入存储器阵列的采集/重放装置和存储装置来获取和显示数字图像，语音，音乐等数字信息。在显示或其他显示之前，数字信息存储在可重写存储器中。在将数字信息显示或以其他方式呈现给用户以进行审查之后，用户然后选择是否将数字信息存储在一次写入存储器阵列中。取决于用户选择，数字信息被存储在一次写入存储器阵列中，或者从可重写存储器中擦除而不被存储在一次写入存储器阵列中。以这种方式，为用户长期感兴趣的数字信息保留了一次写入存储器阵列的有限存储容量。类似地，采集/回放设备本身可以检查存储在可重写存储器中的数字信息，并确定是否将该文件提交给一次写入存储器，或者从该可重写存储器丢弃该文件。

34. 发明申请

US20030028734A1 Memory devices and methods for use therewith 失效
公开(公告)号：US20030028734A1
公开(公告)日：2003-02-06
申请号：US10253089
申请日：2002-09-23
发明人： Roger W. March , Christopher S. Moore , Daniel T. Brown
IPC分类号： G06F012/00 , G06F012/16
CPC分类号： G06F11/1008 , G06F3/0601 , G06F3/08 , G06F2003/0697 , G11C17/00 , Y10S707/99934 , Y10S707/99943 , Y10S707/99953 , Y10S707/99956
摘要： The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a method is presented for using a file system to dynamically respond to variability in an indicated minimum number of memory cells of first and second write-once memory devices. In another preferred embodiment, a method for overwriting data in a memory device is described in which an error code is disregarded after a destructive pattern is written. In yet another preferred embodiment, a method is presented in which, after a block of memory has been allocated for a file to be stored in a memory device, available lines in that block are determined. Another preferred embodiment relates to reserving at least one memory cell in a memory device for file structures or file system structures. A memory device is also provided in which file system structures of at least two file systems are stored in the same memory partition. Additionally, methods for permanently preventing modification of data stored in a memory device and for identifying memory cells storing data are disclosed.

35. 发明申请

US20030023945A1 Metal interconnection read only memory cell 有权
公开(公告)号：US20030023945A1
公开(公告)日：2003-01-30
申请号：US09918008
申请日：2001-07-30
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chien-Fan Wang , Hing-Chang Yu
IPC分类号： H03K017/693
CPC分类号： H03K19/1776 , G11C17/00 , H01L27/112 , H03K19/17796
摘要： A method and system for forming a programmable logic array from a plurality of read only memory cells. The interconnection of the first metal layer with a second metal layer results in the formation of a read only memory cell therebetween, such that a plurality of read only memory cells can be configured to form a programmable logic array. One or more of the read only memory cells may be programmed utilizing a particular contact via programming technique, resulting in a shortened turn-around-time, reduced read only memory cell size, and a reduction in the necessity of requiring additional masks for read only memory logical processes associated with the programmable logic array. The memory cells comprise mask ROM cells which do not require extra masks, and can be programmed utilizing via programming techniques. The utilization of a first and second metal layer in interconnection configuration for a ROM cell results in smaller cell size.

36. 发明申请

US20020065983A1 Method for storing digital information in write-once memory array 有权
标题翻译：用于在一次写入存储器阵列中存储数字信息的方法
公开(公告)号：US20020065983A1
公开(公告)日：2002-05-30
申请号：US09727229
申请日：2000-11-30
发明人： David R. Friedman , Derek J. Bosch , Christopher R. Moore , Joseph J. Tringali , Michael A. Vyvoda
IPC分类号： G06F012/00
CPC分类号： G11C17/00
摘要： An acquisition/playback device and a memory device including a solid-state write-once memory array are used to acquire and display digital information such as digital images, voice, music, or the like. Prior to display or other presentation, the digital information is stored in a re-writable memory. After the digital information has been displayed or otherwise presented to the user for review, the user then elects whether to store the digital information in the write-once memory array. Depending upon the user election, the digital information is either stored in the write-once memory array, or erased from the re-writable memory without being stored in the write-once memory array. In this way the limited storage capacity of the write-once memory array is preserved for digital information that is of long-term interest to the user. Similarly, an acquisition/playback device itself can review the digital information stored in the re-writable memory and determine whether to commit that file to the write-once memory or to discard the file from the re-writable memory.
摘要翻译：使用包括固态一次写入存储器阵列的采集/重放装置和存储装置来获取和显示数字图像，语音，音乐等数字信息。在显示或其他显示之前，数字信息存储在可重写存储器中。在将数字信息显示或以其他方式呈现给用户以进行审查之后，用户然后选择是否将数字信息存储在一次写入存储器阵列中。取决于用户选择，数字信息被存储在一次写入存储器阵列中，或者从可重写存储器中擦除而不被存储在一次写入存储器阵列中。以这种方式，为用户长期感兴趣的数字信息保留了一次写入存储器阵列的有限存储容量。类似地，采集/回放设备本身可以检查存储在可重写存储器中的数字信息，并确定是否将该文件提交给一次写入存储器，或者从该可重写存储器中丢弃该文件。

37. 发明授权

US5673218A Dual-addressed rectifier storage device 失效
标题翻译：双路整流存储设备
公开(公告)号：US5673218A
公开(公告)日：1997-09-30
申请号：US610992
申请日：1996-03-05
申请人： Daniel R. Shepard
发明人： Daniel R. Shepard
IPC分类号： G11C8/04 , G11C17/06 , H01L27/102 , H01L27/112
CPC分类号： G11C17/10 , G06F17/00 , G11C17/00 , G11C17/06 , G11C8/04 , H01L27/1021 , H01L27/112
摘要： A read-only data storage and retrieval device is presented having no moving parts and requiring very low power. Addressing can be accomplished sequentially where the address increments automatically or can be accomplished randomly. High density storage is achieved through the use of a highly symmetric diode matrix that is addressed in both coordinate directions; its symmetry makes the Dual-addressed Rectifier Storage (DRS) Array very scaleable, particularly when made as an integrated circuit. For even greater storage flexibility, multiple digital rectifier storage arrays can be incorporated into the device, one or more of which can be made removable and interchangeable.
摘要翻译：提供了只读数据存储和检索装置，其没有移动部件并且需要非常低的功率。可以顺序完成寻址，其中地址自动增加或可以随机完成。通过使用在两个坐标方向上寻址的高度对称的二极管矩阵来实现高密度存储; 其对称性使得双寻址整流器存储（DRS）阵列非常可扩展，特别是当作为集成电路时。为了获得更大的存储灵活性，可将多个数字整流器存储阵列并入设备中，其中一个或多个可以被制造为可移除和可互换的。

38. 发明授权

US4990489A Read only memory device including a superconductive electrode 失效
标题翻译：只读存储器件包括超导电极
公开(公告)号：US4990489A
公开(公告)日：1991-02-05
申请号：US215802
申请日：1988-07-06
申请人： Yoji Mashiko , Tadashi Nishioka
发明人： Yoji Mashiko , Tadashi Nishioka
IPC分类号： H01L23/522 , G11C7/00 , G11C17/00 , G11C17/12 , H01L21/28 , H01L21/768 , H01L21/82 , H01L21/8246 , H01L23/525 , H01L23/532 , H01L27/112 , H01L29/43 , H01L39/00 , H01L39/06 , H01L39/24
CPC分类号： H01L23/53285 , G11C17/00 , G11C17/12 , G11C7/005 , H01L21/76891 , H01L23/5258 , H01L2924/0002 , Y10S148/046 , Y10S505/70 , Y10S505/703 , Y10S505/706 , Y10S505/831 , Y10S505/841 , Y10S505/923
摘要： A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.
摘要翻译：只读存储器件包括第一电极和第二电极，该第一电极和第二电极以与第一电极重叠的关系布置，以便在与其对应于一种类型的数据的存储位置的交叉点几何地连接。第一和第二电极中的至少一个由陶瓷系统的高温超导体形成。由高温超导体形成的两个电极中规定的一个电极具有高电阻区域，用于在对应于另一类型的存储数据的存储位置的交叉点处彼此绝缘第一和第二电极。通过照射与聚焦离子束的交点来形成高电阻区域。

39. 发明授权

US4633442A Protective circuitry for a read only memory 失效
标题翻译：只读存储器的保护电路
公开(公告)号：US4633442A
公开(公告)日：1986-12-30
申请号：US697992
申请日：1985-02-04
申请人： Michael N. Borghese
发明人： Michael N. Borghese
IPC分类号： G11C5/14 , G11C11/412 , G11C17/00 , G11C29/00 , G11C29/04 , G11C7/00
CPC分类号： G11C17/00 , G11C5/143
摘要： Protective circuitry for a monolithic ROM is shown to include six monolithic FETS interconnected so that two comprise a resistance-capacitance series circuit responsive to a biasing voltage applied thereto to produce a time-varying voltage and the remaining four monolithic FETS are interconnected to form a latching circuit having a "high" output when the time-varying voltage is below a predetermined level and a "low" output thereafter as long as the biasing voltage is applied.
摘要翻译：显示单片ROM的保护电路包括互连的六个单片FET，使得两个包括电阻 - 电容串联电路，其响应于施加到其上的偏置电压以产生时变电压，并且剩余的四个单片FET互连以形成锁存电路当时变电压低于预定电平时具有“高”输出，此后只要施加偏置电压就具有“低”输出。

40. 发明授权

US4195339A Sequential control system 失效
标题翻译：顺序控制系统
公开(公告)号：US4195339A
公开(公告)日：1980-03-25
申请号：US821942
申请日：1977-08-04
申请人： Walter A. Smith , Raymond T. Harp
发明人： Walter A. Smith , Raymond T. Harp
IPC分类号： G06F9/32 , G06F9/26 , G11C17/00 , G11C8/00
CPC分类号： G11C17/00 , G06F9/262
摘要： A digital circuit is disclosed which may be used to sequence a series of events and which can alter the sequence of events as a function of the inputs to the circuit. A read-only memory is accessed by an address register which can increment the address of the instruction which it is desired to access from memory either incrementally, as by counting, or in a branching mode by altering the address by an amount corresponding to a portion of one or more of the instructions taken from the memory. Branching may be conditional or unconditional.
摘要翻译：公开了一种数字电路，其可以用于对一系列事件进行排序，并且可以根据电路的输入来改变事件的顺序。地址寄存器访问只读存储器，该地址寄存器可以递增地递增地递增地从存储器访问的指令的地址，如通过计数，或者以分支模式通过将地址改变相当于一部分的量从存储器中取出的一个或多个指令。分支可能是有条件的或无条件的。

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