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    • 32. 发明申请
    • ALUMINUM NITRIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF
    • 氮化铝烧结体及其制造方法
    • US20090311162A1
    • 2009-12-17
    • US12376158
    • 2007-07-26
    • Tatsuo EsakiHideki Satou
    • Tatsuo EsakiHideki Satou
    • C01B21/072
    • C04B35/581C04B35/645C04B37/005C04B2235/3217C04B2235/3869C04B2235/3873C04B2235/5436C04B2235/5445C04B2235/656C04B2235/6567C04B2235/725C04B2235/786C04B2235/80C04B2235/9607C04B2237/08C04B2237/366
    • An aluminum nitride sintered body in which the ratio of a peak area S2 of a diffraction peak at 2θ=34° or more and 35° or less corresponding to an aluminum oxynitride phase to a peak area S1 of a diffraction peak of an aluminum nitride crystal face [100] in X-ray diffraction, i.e. S2/S1, is 0.01 or more and 0.3 or less, and the spin concentration at a magnetic field between 336 mT and 342 mT as measured by an electron spin resonance method is 1×1015 spins/cm3 or more and 1×1020 spins/cm3 or less. This is manufactured by: mixing a predetermined amount of the aluminum nitride powder and the α-alumina powder whose ratio of average particle diameter to that of aluminum nitride powder is within the range of 0.3 or more and 0.8 or less; and sintering the mixed powder at ambient-pressure. Accordingly, it is possible to provide the aluminum nitride sintered body whose volume resistivity is controlled within the range of 1×108 Ω·cm or more and 1×1012 Ω·cm or less, and the volume resistivity can be stably maintained even heated up to 1950° C. for jointing.
    • 氮化铝烧结体,其中在2θ= 34°以上且35°以下的衍射峰的峰面积S2对应于氮氧化铝相与氮化铝晶体的衍射峰的峰面积S1的比率 X射线衍射中的面[100],即S2 / S1为0.01以上且0.3以下,通过电子自旋共振法测定的336mT〜342mT之间的磁场的自旋浓度为1×10 15个旋转/ cm3以上,1×1020自旋/ cm3以下。 这是通过以下方式制造的:将预定量的氮化铝粉末和平均粒径与氮化铝粉末的比例在0.3以上至0.8以下的α-氧化铝粉末混合; 并在环境压力下烧结混合粉末。 因此,可以提供其体积电阻率控制在1×10 8Ω·cm以上至1×10 12Ω·cm以下的氮化铝烧结体,并且可以将体积电阻率稳定地维持甚至加热至1950℃ 联合。