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1. 发明申请

US20060156528A1 Aluminum nitride conjugate body and method of producing the same 失效
标题翻译：氮化铝结合体及其制造方法
公开(公告)号：US20060156528A1
公开(公告)日：2006-07-20
申请号：US10560159
申请日：2004-06-11
申请人： Tatsuo Esaki
发明人： Tatsuo Esaki
IPC分类号： B21D39/03
CPC分类号： C04B37/006 , B32B18/00 , B32B2315/02 , C04B35/581 , C04B35/6303 , C04B35/634 , C04B35/645 , C04B37/001 , C04B37/003 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3225 , C04B2235/656 , C04B2235/6567 , C04B2235/661 , C04B2235/95 , C04B2235/96 , C04B2235/963 , C04B2235/9638 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/366 , C04B2237/704 , C04B2237/708 , H01L21/6833 , H05B3/143 , Y10T29/4913 , Y10T29/49826 , Y10T29/49968 , Y10T29/4997 , Y10T279/23 , Y10T428/12347 , Y10T428/12493 , Y10T428/24917 , Y10T428/249953
摘要： An aluminum nitride joined body comprising two pieces of aluminum nitride sintered body plates joined together without using adhesive, and a metal layer formed on a portion of the junction interface thereof, wherein, as viewed on a side section passing through the center of the joined body, a plurality of voids are existing in the directly joined region where the sintered body plates are directly facing each other on the junction interface, the voids having an average length L of 0.5 to 4 μm along the junction interface, thereby forming non-joined portions due to the voids, and a non-joined ratio Q on the side section as calculated by the following formula (1), Non-joined ratio Q=(X/Y)×100 (1) where X is a length of the non-joined portion in the direction of junction interface expressed by the sum of lengths L of the voids existing in the directly joined region, and Y is a length of the directly joined region where the voids are existing, is in a range of from 0.1 to 0.5% on average. The AlN plate-like joined body has the metal layer contained therein that is effectively suppressed from warping, exhibits a large junction strength, excellent durability, and is useful as a plate heater or an electrostatic chuck for treating a semiconductor wafer that is placed thereon in an apparatus for producing a semiconductor.
摘要翻译：一种氮化铝接合体，包括两块不使用粘合剂接合在一起的氮化铝烧结体板，以及形成在其接合界面的一部分上的金属层，其中，从穿过接合体的中心的侧面看，在接合界面上烧结体板直接面对的直接接合区域中存在多个空隙，空隙沿着接合界面具有0.5-4μm的平均长度L，从而形成非接合部分由于空隙，以及由下式（1）计算出的侧面部分的非连接比率Q，<？in-line-formula description =“In-line Formulas”end =“lead”？> Non- 连接比Q =（X / Y）×100（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X是非接合部分在方向上的长度接合界面由存在于直接接合区域中的空隙的长度L的总和表示， Y是存在空隙的直接接合区域的长度，平均为0.1〜0.5％的范围。 AlN板状接合体具有有效地抑制翘曲的金属层，显示出大的接合强度，优异的耐久性，并且可用作板状加热器或用于处理放置在其上的半导体晶片的静电卡盘一种半导体制造装置。

2. 发明授权

US5712040A Fluorine-containing resin molded articles 失效
标题翻译：含氟树脂成型品
公开(公告)号：US5712040A
公开(公告)日：1998-01-27
申请号：US672034
申请日：1996-06-26
申请人： Akihiko Nakahara , Junichiro Nakashima , Shinji Tokunaga , Tatsuo Esaki
发明人： Akihiko Nakahara , Junichiro Nakashima , Shinji Tokunaga , Tatsuo Esaki
IPC分类号： B32B33/00 , C08J5/22 , C08J7/04 , C08J7/12 , B32B27/14 , B32B7/00
CPC分类号： C08J7/047 , B32B33/00 , C08J5/225 , C08J7/12 , B29K2027/12 , B29K2995/0003 , B29L2031/3406 , C08J2327/12 , Y10T428/1321 , Y10T428/265 , Y10T428/3154 , Y10T428/31544
摘要： The present invention relates to novel fluorine-contained resin molded articles having antistatic property, and specifically, the invention relates to fluorine-contained resin molded articles which exhibit good antistatic effect while maintaining properties inherent in the fluorine-contained resin and are fouled very little, owing to the provision of an antistatic layer of a fluorine-contained resin of which the surface resistivity is adjusted to be not larger than 10.sup.13 .OMEGA. by making present the ion-exchange groups on the surface layer of a base material composed of a fluorine-contained resin which does not substantially contain ion-exchange group.
摘要翻译：本发明涉及具有抗静电性能的新型含氟树脂成型体，具体而言，本发明涉及具有良好抗静电效果的含氟树脂成型体，同时保持含氟树脂固有的特性，并且污染很少，由于通过在由含氟的基体材料构成的基体材料的表面层上形成离子交换基团，从而将表面电阻率调整为1013Ω以下的含氟树脂的抗静电层基本上不含有离子交换基团的树脂。

3. 发明申请

US20090311162A1 ALUMINUM NITRIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US20090311162A1
公开(公告)日：2009-12-17
申请号：US12376158
申请日：2007-07-26
申请人： Tatsuo Esaki , Hideki Satou
发明人： Tatsuo Esaki , Hideki Satou
IPC分类号： C01B21/072
CPC分类号： C04B35/581 , C04B35/645 , C04B37/005 , C04B2235/3217 , C04B2235/3869 , C04B2235/3873 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6567 , C04B2235/725 , C04B2235/786 , C04B2235/80 , C04B2235/9607 , C04B2237/08 , C04B2237/366
摘要： An aluminum nitride sintered body in which the ratio of a peak area S2 of a diffraction peak at 2θ=34° or more and 35° or less corresponding to an aluminum oxynitride phase to a peak area S1 of a diffraction peak of an aluminum nitride crystal face [100] in X-ray diffraction, i.e. S2/S1, is 0.01 or more and 0.3 or less, and the spin concentration at a magnetic field between 336 mT and 342 mT as measured by an electron spin resonance method is 1×1015 spins/cm3 or more and 1×1020 spins/cm3 or less. This is manufactured by: mixing a predetermined amount of the aluminum nitride powder and the α-alumina powder whose ratio of average particle diameter to that of aluminum nitride powder is within the range of 0.3 or more and 0.8 or less; and sintering the mixed powder at ambient-pressure. Accordingly, it is possible to provide the aluminum nitride sintered body whose volume resistivity is controlled within the range of 1×108 Ω·cm or more and 1×1012 Ω·cm or less, and the volume resistivity can be stably maintained even heated up to 1950° C. for jointing.
摘要翻译：氮化铝烧结体，其中在2θ= 34°以上且35°以下的衍射峰的峰面积S2对应于氮氧化铝相与氮化铝晶体的衍射峰的峰面积S1的比率 X射线衍射中的面[100]，即S2 / S1为0.01以上且0.3以下，通过电子自旋共振法测定的336mT〜342mT之间的磁场的自旋浓度为1×10 15个旋转/ cm3以上，1×1020自旋/ cm3以下。这是通过以下方式制造的：将预定量的氮化铝粉末和平均粒径与氮化铝粉末的比例在0.3以上至0.8以下的α-氧化铝粉末混合; 并在环境压力下烧结混合粉末。因此，可以提供其体积电阻率控制在1×10 8Ω·cm以上至1×10 12Ω·cm以下的氮化铝烧结体，并且可以将体积电阻率稳定地维持甚至加热至1950℃ 联合。

4. 发明授权

US07488543B2 Aluminum nitride conjugate body and method of producing the same 失效
标题翻译：氮化铝结合体及其制造方法
公开(公告)号：US07488543B2
公开(公告)日：2009-02-10
申请号：US10560159
申请日：2004-06-11
申请人： Tatsuo Esaki
发明人： Tatsuo Esaki
IPC分类号： C04B37/02 , B32B3/10 , B32B3/26
CPC分类号： C04B37/006 , B32B18/00 , B32B2315/02 , C04B35/581 , C04B35/6303 , C04B35/634 , C04B35/645 , C04B37/001 , C04B37/003 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3225 , C04B2235/656 , C04B2235/6567 , C04B2235/661 , C04B2235/95 , C04B2235/96 , C04B2235/963 , C04B2235/9638 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/366 , C04B2237/704 , C04B2237/708 , H01L21/6833 , H05B3/143 , Y10T29/4913 , Y10T29/49826 , Y10T29/49968 , Y10T29/4997 , Y10T279/23 , Y10T428/12347 , Y10T428/12493 , Y10T428/24917 , Y10T428/249953
摘要： An aluminum nitride joined body comprising two pieces of aluminum nitride sintered body plates joined together without using adhesive, and a metal layer formed on a portion of the junction interface thereof, wherein, as viewed on a side section passing through the center of the joined body, a plurality of voids are existing in the directly joined region where the sintered body plates are directly facing each other on the junction interface, the voids having an average length L of 0.5 to 4 μm along the junction interface, thereby forming non-joined portions due to the voids, and a non-joined ratio Q on the side section as calculated by the following formula (1), Non-joined ratio Q=(X/Y)×100 (1) where X is a length of the non-joined portion in the direction of junction interface expressed by the sum of lengths L of the voids existing in the directly joined region, and Y is a length of the directly joined region where the voids are existing, is in a range of from 0.1 to 0.5% on average. The AlN plate-like joined body has the metal layer contained therein that is effectively suppressed from warping, exhibits a large junction strength, excellent durability, and is useful as a plate heater or an electrostatic chuck for treating a semiconductor wafer that is placed thereon in an apparatus for producing a semiconductor.
摘要翻译：一种氮化铝接合体，包括两块不使用粘合剂接合在一起的氮化铝烧结体板，以及形成在其接合界面的一部分上的金属层，其中，从穿过接合体的中心的侧面看，在接合界面上烧结体板直接面对的直接接合区域中存在多个空隙，空隙沿着接合界面具有0.5-4μm的平均长度L，从而形成非接合部分由于空隙，以及由下式（1）计算出的侧面部分的非连接比率Q，<？in-line-formula description =“In-line Formulas”end =“lead”？> Non- 连接比Q =（X / Y）×100（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X是非接合部分在方向上的长度接合界面由存在于直接接合区域中的空隙的长度L的总和表示， Y是存在空隙的直接接合区域的长度，平均为0.1〜0.5％的范围。 AlN板状接合体具有有效地抑制翘曲的金属层，显示出大的接合强度，优异的耐久性，并且可用作板状加热器或用于处理放置在其上的半导体晶片的静电卡盘一种半导体制造装置。

5. 发明申请

US20070212567A1 Aluminum Nitride Junction Body And Method Of Producing The Same 审中-公开
标题翻译：氮化铝结体及其制造方法
公开(公告)号：US20070212567A1
公开(公告)日：2007-09-13
申请号：US10577309
申请日：2004-10-28
申请人： Tatsuo Esaki , Hideki Sato , Masanobu Azuma
发明人： Tatsuo Esaki , Hideki Sato , Masanobu Azuma
IPC分类号： C04B37/00
CPC分类号： C04B37/005 , B32B18/00 , B32B2315/02 , C04B35/581 , C04B35/62655 , C04B35/64 , C04B35/645 , C04B37/003 , C04B2235/5436 , C04B2235/5463 , C04B2235/661 , C04B2235/96 , C04B2235/963 , C04B2237/08 , C04B2237/083 , C04B2237/122 , C04B2237/366 , C04B2237/64 , C04B2237/66 , C04B2237/708 , Y10T428/12736
摘要： An aluminum nitride junction body useful as an electrostatic chuck for holding a semiconductor wafer in an apparatus for producing a semiconductor, comprising aluminum nitride sintered plates joined together via a sintered metal layer. When used in the above application, the junction structure works to uniformly adsorb the semiconductor wafer. The aluminum nitride junction body is obtained by joining aluminum nitride sintered plates 1-a and 1-b together having a sintered metal layer 2 of tungsten or molybdenum of a thickness of 15 to 100 μm formed on at least a portion of the junction surface thereof, the sintered metal layer having a sheet resistivity of not larger than 1 Ω/□ and warping by not more than 100μ/100 mm.
摘要翻译：一种用作静电卡盘的氮化铝接合体，用于将半导体晶片保持在用于制造半导体的装置中，包括通过烧结金属层接合在一起的氮化铝烧结板。当在上述应用中使用时，连接结构用于均匀地吸附半导体晶片。通过将氮化铝烧结板1-a和1-b结合在一起形成氮化铝接合体，该烧结板具有在其连接表面的至少一部分上形成的厚度为15-100μm的钨或钼的烧结金属层2 ，所述烧结金属层的电阻率不大于1Ω/□，翘曲不大于100mu / 100mm。

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