专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07041611B2 Enhancement of fabrication yields of nanomechanical devices by thin film deposition 有权
标题翻译：通过薄膜沉积增强纳米机械装置的制造产量
公开(公告)号：US07041611B2
公开(公告)日：2006-05-09
申请号：US10802259
申请日：2004-03-17
申请人： Robert H. Blick , Daniel R. Koenig
发明人： Robert H. Blick , Daniel R. Koenig
IPC分类号： H01L21/00
CPC分类号： B81C1/00476 , B81B2203/0109 , B81B2203/0118 , B81C2201/053 , Y10S438/90 , Y10S977/702
摘要： A protective film is applied onto a nanostructural feature supported on a sacrificial layer by energy beam assisted deposit of material from a vapor through which the beam passes. A wet etchant is applied to etch away the sacrificial layer beneath the nanostructural feature to leave it suspended as a cantilever or bridge. The film protects the structural feature from damage during etching, and may be removed after the wet etching process is completed.
摘要翻译：通过能量束辅助沉积材料从蒸汽通过的蒸气将保护膜施加到支撑在牺牲层上的纳米结构特征上。施加湿蚀刻剂以蚀刻除了纳米结构特征之下的牺牲层以使其悬挂为悬臂或桥。该膜在蚀刻期间保护结构特征免受损坏，并且可以在湿蚀刻工艺完成之后去除。

32. 发明申请

US20060001114A1 Apparatus and method of wafer level package 审中-公开
标题翻译：晶圆级封装的装置和方法
公开(公告)号：US20060001114A1
公开(公告)日：2006-01-05
申请号：US10927066
申请日：2004-08-27
申请人： Jen-Yi Chen , Jing-Hung Chiou , Kai-Hsiang Yen
发明人： Jen-Yi Chen , Jing-Hung Chiou , Kai-Hsiang Yen
IPC分类号： H01L29/82
CPC分类号： B81C1/00301 , B81B2207/095 , B81C1/00896 , B81C2201/053 , H01L21/50 , H01L23/04 , H01L23/055 , H01L23/24 , H01L2224/05001 , H01L2224/05022 , H01L2224/16 , H01L2924/00014 , H01L2924/16235 , H01L2224/05599 , H01L2224/05099
摘要： An apparatus of wafer level package for the micro elements and methods of fabricating the same is disclosed. The apparatus is utilized to provide a lid substrate for bonding the lid substrate to a substrate having several micro elements and therefore form a cavity capable of being operated for the micro elements. The openings of the cavity are used to make the micro elements capable of being contacted with the atmosphere and therefore form an apparatus of wafer level package for the micro elements.
摘要翻译：公开了一种用于微元件的晶片级封装的装置及其制造方法。该装置用于提供用于将盖基板接合到具有几个微元件的基板的盖基板，因此形成能够对微元件进行操作的空腔。空腔的开口用于使微元件能够与大气接触，并且因此形成用于微元件的晶片级封装的装置。

33. 发明申请

US20050239231A1 Method for making a microelectromechanical system using a flexure protection layer 失效
标题翻译：制造使用挠曲保护层的微机电系统的方法
公开(公告)号：US20050239231A1
公开(公告)日：2005-10-27
申请号：US10833203
申请日：2004-04-27
申请人： James Przybyla , Arthur Piehl
发明人： James Przybyla , Arthur Piehl
IPC分类号： B81B3/00 , G11B5/48 , G11B21/16 , H01L21/00
CPC分类号： B81C1/00801 , B81B2201/047 , B81B2203/0163 , B81C2201/0109 , B81C2201/053 , B81C2201/056
摘要： A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.
摘要翻译：通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。弯曲保护层被沉积成使得弯曲部分的一部分露出。在挠曲接合元件和挠曲件的暴露部分之间建立接触。在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

34. 发明申请

US20050230257A1 Microdevice with movable microplatform and process for making thereof 审中-公开
标题翻译：具有可移动微平台的微型设备及其制造方法
公开(公告)号：US20050230257A1
公开(公告)日：2005-10-20
申请号：US11048298
申请日：2005-01-31
申请人： Hubert Jerominek , Patrice Topart
发明人： Hubert Jerominek , Patrice Topart
IPC分类号： B81B3/00 , C25D1/00 , G02B26/08 , C25D1/06 , G01N9/30
CPC分类号： B81C1/00142 , B81B2201/042 , B81B2201/047 , B81C2201/0109 , B81C2201/053 , C25D1/003 , G02B26/0841
摘要： A process for making a microdevice that includes the steps of providing a base member and selectively electroforming a support member for supporting a microplatform with respect to the base member. The process also includes the steps of selectively electroforming the microplatform and forming a flexible hinge member for hingedly connecting the microplatform to the support member and allowing relative movement of the microplatform with respect to the support member. This microdevice, when compared to prior art devices, can have improved mechanical strength, rigidity, low deformation, and high planarity.
摘要翻译：一种用于制造微型装置的方法，包括以下步骤：提供基底构件并选择性地电铸相对于基底构件支撑微平台的支撑构件。该方法还包括以下步骤：选择性地电铸微型平台并形成用于将微平台与支撑构件铰接连接并允许微平台相对于支撑构件相对运动的柔性铰链构件。该微型装置与现有技术的装置相比可以具有改善的机械强度，刚性，低变形和高平面度。

35. 发明申请

US20040259330A1 Semiconductor device and method for producing the same by dicing 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040259330A1
公开(公告)日：2004-12-23
申请号：US10896042
申请日：2004-07-22
发明人： Tetsuo Fujii , Hiroshi Muto , Shinji Yoshihara , Sumitomo Inomata
IPC分类号： H01L021/44
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
摘要翻译：将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

36. 发明授权

US06583031B2 Method of making a MEMS element having perpendicular portion formed from substrate 失效
标题翻译：制造具有由衬底形成的垂直部分的MEMS元件的方法
公开(公告)号：US06583031B2
公开(公告)日：2003-06-24
申请号：US09915217
申请日：2001-07-25
申请人： Chuang-Chia Lin
发明人： Chuang-Chia Lin
IPC分类号： H01L2130
CPC分类号： G02B6/3518 , B81B3/004 , B81B2201/045 , B81B2203/058 , B81C2201/053 , G02B6/3514 , G02B6/3546 , G02B6/3566 , G02B6/357 , G02B6/3572 , G02B6/358
摘要： A microelectromechanical systems (MEMS) element, MEMS optical switch and MEMS fabrication method are described. The MEMS element comprises a crystalline and moveable element is moveably attached to the substrate. The moveable element includes a perpendicular portion oriented substantially perpendicular to a plane of the substrate. The crystal structure of the perpendicular portion and substrate are substantially similar. The moveable element moveable is moveably attached to the substrate for motion substantially constrained to a plane oriented substantially perpendicular to a plane of the substrate. In at least one position, a part of a perpendicular portion of the moveable element projects beyond a surface of the substrate. The moveable element may be retained in place by a latch. The perpendicular portion may be formed substantially perpendicular portion to the substrate. An array of such structures can be implemented to work as an optical switch. The optical switch may comprise a crystalline substrate and one or more moveable elements moveably attached to the substrate. The MEMS elements may be fabricated by providing a substrate; forming one or more trenches in the substrate to define a perpendicular portion of a element; and moveably attaching the moveable element to a first surface of the substrate; removing a portion of the substrate such that at least a part of the perpendicular portion projects beyond a second surface of the substrate. The various embodiments provide for a robust and reliable MEMS elements that may be simply fabricated and densely packed.
摘要翻译：描述了微机电系统（MEMS）元件，MEMS光开关和MEMS制造方法。 MEMS元件包括可移动地附接到基底的结晶和可移动元件。可移动元件包括垂直于基本垂直于基底平面的垂直部分。垂直部分和基底的晶体结构基本相似。可移动的可移动元件可移动地附接到基板，用于基本上约束到基本上垂直于基板的平面定向的平面的运动。在至少一个位置中，可移动元件的垂直部分的一部分突出超过衬底的表面。可移动元件可以通过闩锁保持在适当的位置。垂直部分可以形成为基本上垂直于基底的部分。可以实现这种结构的阵列以用作光学开关。光学开关可以包括结晶衬底和可移动地附接到衬底的一个或多个可移动元件。可以通过提供衬底来制造MEMS元件; 在所述衬底中形成一个或多个沟槽以限定元件的垂直部分; 以及将所述可移动元件可移动地附接到所述基板的第一表面; 去除所述基底的一部分，使得所述垂直部分的至少一部分突出超过所述基底的第二表面。各种实施例提供了可以简单地制造和密集包装的鲁棒且可靠的MEMS元件。

37. 发明申请

US20030087468A1 Membrane structures for micro-devices, micro-devices including same and methods for making same 失效
标题翻译：用于微器件的膜结构，包括其的微器件及其制造方法
公开(公告)号：US20030087468A1
公开(公告)日：2003-05-08
申请号：US09986107
申请日：2001-11-07
申请人： XEROX CORPORATION
发明人： Peter M. Gulvin , Elliott A. Eklund , Joel A. Kubby
IPC分类号： H01L021/00
CPC分类号： B81C1/00476 , B81B2203/0127 , B81C2201/053
摘要： A structure for a micro-device is fabricated by forming: a first layer of sacrificial material, a layer of structural material over the first sacrificial material layer, a second layer of sacrificial material over the structural material layer and a protective layer over the second sacrificial material layer. A release etch is used to remove the first and second sacrificial material layers at approximately the same rate. A structural feature may also be fabricated by forming: a first layer of a first material; a layer of structural material over the first layer of the first material; at least one cut in the structural material layer; and, a first layer of a sacrificial material, different from the first material, over the structural material layer such that an interface is created between the first layer of the sacrificial material and the first layer of the first material at the at least one cut.
摘要翻译：通过在第一牺牲材料层上形成第一牺牲材料层，结构材料层，在结构材料层上形成第二牺牲材料层，在第二牺牲层上形成保护层，制成微器件结构材料层。使用释放蚀刻以大致相同的速率去除第一和第二牺牲材料层。还可以通过形成第一材料的第一层来制造结构特征; 在第一材料的第一层上方的结构材料层; 在结构材料层中至少有一个切口; 以及在所述结构材料层上方的与所述第一材料不同的牺牲材料的第一层，使得在所述牺牲材料的第一层和所述至少一个切口处的所述第一材料的所述第一层之间形成界面。

38. 发明申请

US20020142508A1 Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant 有权
标题翻译：在通过KOH蚀刻剂蚀刻衬底期间在半导体衬底上形成的结构的表面的金属膜保护
公开(公告)号：US20020142508A1
公开(公告)日：2002-10-03
申请号：US10071576
申请日：2002-02-08
申请人： EM Microelectronic-Marin SA
发明人： Ulrich Munch
IPC分类号： H01L021/00 , H01L021/28 , H01L021/44 , H01L023/48 , H01L023/52 , H01L029/40
CPC分类号： B81C1/00801 , B81C2201/053 , B81C2203/0735 , H01L24/11 , H01L24/13 , H01L2224/13099 , H01L2224/13144 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01033 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/00014
摘要： The present invention concerns the field of microstructures and in particular microstructures made via CMOS technology on semiconductor substrates intended to undergo micro-machining by wet chemical etching, in particular by a KOH etchant. According to the present invention, protection against the KOH reactive agent is provided to such a structure by the deposition of a metal film (40, 41, 43) including at least on external gold layer (43) on the surface of the structure. This metal film (40, 41, 43) advantageously allows the use of mechanical protective equipment to be omitted and thus allows the wafers to be processed in batches. The present invention also proves perfectly compatible with a standard gold bumping process.
摘要翻译：本发明涉及通过CMOS技术在半导体衬底上制造的微结构，特别是通过湿式化学蚀刻进行微加工的微结构，特别是通过KOH蚀刻剂。根据本发明，通过在结构的表面上沉积至少包含在外部金层（43）上的金属膜（40,41,43），向这种结构提供对KOH反应剂的保护。该金属膜（40,41,43）有利地允许省略使用机械保护装置，从而允许批量处理晶片。本发明也证明与标准金碰撞过程完全兼容。

39. 发明授权

US06429506B1 Semiconductor device produced by dicing 有权
标题翻译：通过切割生产的半导体器件
公开(公告)号：US06429506B1
公开(公告)日：2002-08-06
申请号：US09525514
申请日：2000-03-15
申请人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
发明人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
IPC分类号： H01L21301
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
摘要翻译：将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

40. 发明授权

US06423563B2 Method for manufacturing semiconductor dynamic quantity sensor 有权
标题翻译：制造半导体动态量传感器的方法
公开(公告)号：US06423563B2
公开(公告)日：2002-07-23
申请号：US09861535
申请日：2001-05-22
申请人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
发明人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
IPC分类号： H01L2984
CPC分类号： B81C1/00936 , B81B3/0005 , B81B2201/0235 , B81B2201/025 , B81B2203/0136 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/053 , B81C2201/112 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/084
摘要： A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.
摘要翻译：半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。半导体层的电阻率等于或小于3OMEGA cm。可移动电极设置在半导体层中，以根据作用于其的动态量而移位。在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。电容器具有响应于可动电极的位移而变化以检测动态量的容量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式