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31. 发明授权

US09105751B2 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure 有权
标题翻译：具有单晶束的集成半导体器件，制造方法和设计结构
公开(公告)号：US09105751B2
公开(公告)日：2015-08-11
申请号：US13294603
申请日：2011-11-11
申请人： David L. Harame , Anthony K. Stamper
发明人： David L. Harame , Anthony K. Stamper
IPC分类号： H01L21/00 , H01L21/84 , H01L27/12 , H03H3/02 , H03H9/10 , H03H9/17 , H01L41/113 , H03H1/00 , H03H9/24 , H03H9/15
CPC分类号： B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
摘要翻译：提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。该方法包括从绝缘体上的硅层形成单晶束。该方法还包括在单晶束上提供绝缘体材料涂层。该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。绝缘体材料保留在单晶束上。该方法还包括在通孔和绝缘体材料上提供牺牲材料。该方法还包括在牺牲材料上提供盖子。该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

32. 发明授权

US09063023B2 Vibration transducer and its manufacturing method 有权
标题翻译：振动传感器及其制造方法
公开(公告)号：US09063023B2
公开(公告)日：2015-06-23
申请号：US13228855
申请日：2011-09-09
申请人： Takashi Yoshida
发明人： Takashi Yoshida
IPC分类号： G01L9/08 , G01H13/00 , G01L9/00 , G01L1/10 , B81B3/00
CPC分类号： G01L9/0019 , B81B3/001 , B81B2201/025 , B81B2201/0264 , B81B2201/0285 , B81B2203/0118 , G01L1/106 , G01L9/0013 , H03H9/2457 , H03H2009/02496
摘要： A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.
摘要翻译：振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在垂直于所述硅单晶衬底的表面的方向上比在与其平行的方向上更长的截面形状，由硅制成的壳体，围绕振动梁间隙，并与硅单晶基板一起形成真空室，与硅单晶基板的表面平行布置的板状第一电极板，第一电极板具有一端与振动束相连接，板状的第二和第三电极板与硅单晶衬底的表面平行设置，以便彼此相对地插入振动束，并且形成在相对侧面上的凹凸的振动束和第二和第三电极板。

33. 发明申请

US20150028434A1 RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
标题翻译：共振传感器及其制造方法，以及谐振传感器的多层结构
公开(公告)号：US20150028434A1
公开(公告)日：2015-01-29
申请号：US14336613
申请日：2014-07-21
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Takashi YOSHIDA , Shuuji OKUDA , Shigeto IWAI
IPC分类号： B81B3/00 , B81C1/00 , B81B7/02
CPC分类号： B81B3/0021 , B81B3/0002 , B81B7/02 , B81B2201/0271 , B81B2201/0285 , B81C1/00198 , B81C1/00293 , B81C2203/0145 , G01L1/14 , G01N29/12 , G01N2291/014 , G01N2291/02827 , H01L41/094 , H03H3/0072 , H03H9/2463
摘要： A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.
摘要翻译：谐振换能器包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅构成的外壳，围绕谐振器间隙，并与硅单晶衬底一起形成腔室，令人兴奋的模块，其被配置为激励所述谐振器;振动检测模块，被配置为检测所述谐振器的振动，设置在所述腔室上的第一层，所述第一层具有通孔，设置在所述第一层上的第二层，第一层和第二层，以及从第二层朝向谐振器延伸的突起，突起与谐振器在空间上分离，突起与第一层隔开第一间隙，第二层与第一层分离通过第二间隙，第一间隙与第二间隙连通。

34. 发明申请

US20140355381A1 COMPUTATION DEVICES AND ARTIFICIAL NEURONS BASED ON NANOELECTROMECHANICAL SYSTEMS 审中-公开
标题翻译：基于纳米电子系统的计算装置和人工神经元
公开(公告)号：US20140355381A1
公开(公告)日：2014-12-04
申请号：US14273540
申请日：2014-05-08
申请人： Cornell University
发明人： Amit Lal , Serhan Ardanuc , Jason T. Hoople , Justin C. Kuo
IPC分类号： G06N3/04 , G01S15/02 , G06K9/00 , G01S7/521 , B81B3/00 , H01J49/02
CPC分类号： G06N3/04 , B81B3/0021 , B81B2201/018 , B81B2201/0214 , B81B2201/0285 , B81B2203/04 , G01S7/52079 , G01S7/521 , G01S15/02 , G01S15/8925 , G06K9/0002 , G06N3/0635 , H01H1/0094 , H01J49/025
摘要： Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.
摘要翻译：描述技术，系统和设备用于实现用于实现基于纳米机电（NEMS）系统的计算设备和人造神经元。一方面，一种基于纳米机电系统（NEMS）的计算元件包括：基板; 配置为第一光束结构的两个电极和彼此紧密接近而没有接触地定位的第二光束结构，其中第一光束结构固定到基底，而第二光束结构附着到基底上同时在静电下自由弯曲力。第一光束结构保持在恒定电压，而另一电压基于施加到基于NEMS的计算元件的输入信号而变化。

35. 发明申请

US20140145552A1 VIBRATION ELEMENT AND ELECTRONIC DEVICE 审中-公开
标题翻译：振动元件和电子设备
公开(公告)号：US20140145552A1
公开(公告)日：2014-05-29
申请号：US14083949
申请日：2013-11-19
申请人： Seiko Epson Corporation
发明人： Ryuji Kihara , Aritsugu Yajima
IPC分类号： H02N1/00
CPC分类号： H03H9/2436 , B81B3/0013 , B81B2201/0285 , H03H2009/02385 , H03H2009/02472 , H03H2009/02511
摘要： A MEMS vibration element 100 includes a substrate 1, a fixing part 23 provided on a principal surface of the substrate 1, a supporting part 22 extending from the fixing part 23, and an upper electrode 21 (a vibration body) supported by the supporting part 22, isolated from the substrate 1. The upper electrode 21 includes a cut section extending from the peripheral portion of the upper electrode 21 toward the central portion of the upper electrode 21, the cut section 30 exposing a side surface portion of the upper electrode 21. The upper electrode 21 includes a joining part provided at a side surface portion 31 oriented in a direction from the central portion toward the peripheral portion, among the side surface portion exposed by the cut section 30, and the joining part is connected to the supporting part 22.
摘要翻译： MEMS振动元件100包括基板1，设置在基板1的主表面上的固定部23，从固定部23延伸的支撑部22和由支撑部支撑的上部电极21（振动体）上部电极21包括从上部电极21的周边部向上部电极21的中央部延伸的切断部，切断部30露出上部电极21的侧面部上部电极21包括设置在侧面部分31上的接合部分，该接合部分在从切割部分30暴露的侧表面部分之间沿着从中心部分朝向周边部分的方向定向，并且接合部分连接到支撑第22部分。

36. 发明申请

US20140053648A1 PHYSICAL QUANTITY SENSOR AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：物理量传感器及其制作方法
公开(公告)号：US20140053648A1
公开(公告)日：2014-02-27
申请号：US14068057
申请日：2013-10-31
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
发明人： Tameharu OHTA , Tetsuo FUJII , Masanobu AZUKAWA , Takeshi ITO , Itaru ISHII
IPC分类号： G01C19/56 , H05K13/00
CPC分类号： G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
摘要翻译：物理量传感器包括传感器部分，壳体和隔振器。壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。隔振器减小传感器部分和壳体之间的相对振动。

37. 发明授权

US08175300B2 Micro-electromechanical systems (MEMS) microphone and method of manufacturing the same 有权
标题翻译：微机电系统（MEMS）麦克风及其制造方法相同
公开(公告)号：US08175300B2
公开(公告)日：2012-05-08
申请号：US12509411
申请日：2009-07-24
申请人： Jae Woo Lee , Kang Ho Park , Jong Dae Kim
发明人： Jae Woo Lee , Kang Ho Park , Jong Dae Kim
IPC分类号： H04R25/00
CPC分类号： B81C1/00182 , B81B2201/0235 , B81B2201/0257 , B81B2201/0285 , H04R3/00 , H04R19/005 , H04R31/00 , H04R2201/003
摘要： Provided are a micro-electromechanical systems (MEMS) microphone and a method of manufacturing the same. A manufacturing process is simplified compared to a conventional art using both upper and lower substrate processes. Since defects which may occur during manufacturing are reduced due to the simplified manufacturing process, the manufacturing throughput is improved, and since durability of the MEMS microphone is improved, system stability against the external environment is improved.
摘要翻译：提供了一种微机电系统（MEMS）麦克风及其制造方法。与使用上基板工艺和下基板工艺的常规技术相比，制造工艺简化。由于制造过程中可能发生的缺陷由于简化的制造过程而降低，所以提高了制造生产能力，并且由于提高了MEMS麦克风的耐久性，提高了对外部环境的系统稳定性。

38. 发明申请

US20120060607A1 VIBRATION TRANSDUCER AND ITS MANUFACTURING METHOD 有权
标题翻译：振动传感器及其制造方法
公开(公告)号：US20120060607A1
公开(公告)日：2012-03-15
申请号：US13228855
申请日：2011-09-09
申请人： Takashi YOSHIDA
发明人： Takashi YOSHIDA
IPC分类号： G01H13/00 , H01L21/302
CPC分类号： G01L9/0019 , B81B3/001 , B81B2201/025 , B81B2201/0264 , B81B2201/0285 , B81B2203/0118 , G01L1/106 , G01L9/0013 , H03H9/2457 , H03H2009/02496
摘要： A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.
摘要翻译：振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在垂直于所述硅单晶衬底的表面的方向上比在与其平行的方向上更长的截面形状，由硅制成的壳体，围绕振动梁间隙，并与硅单晶基板一起形成真空室，与硅单晶基板的表面平行布置的板状第一电极板，第一电极板具有一端与振动束相连接，板状的第二和第三电极板与硅单晶衬底的表面平行设置，以便彼此相对地插入振动束，并且形成在相对侧面上的凹凸的振动束和第二和第三电极板。

39. 发明授权

US09790088B2 MEMS structure and method of fabricating the same 有权
公开(公告)号：US09790088B2
公开(公告)日：2017-10-17
申请号：US14993105
申请日：2016-01-12
申请人： UNITED MICROELECTRONICS CORP.
发明人： Meng-Jia Lin , Yung-Hsiao Lee , Weng-Yi Chen , Shih-Wei Li , Chung-Hsien Liu
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00246 , B81B7/008 , B81B2201/0235 , B81B2201/0285 , B81B2203/0315 , B81B2207/012 , B81B2207/015 , B81C1/00571 , B81C2201/0132 , B81C2201/014
摘要： A method of fabricating a MEMS structure includes providing a substrate comprising a logic element region and a MEMS region. Next, a logic element is formed within the logic element region. A nitrogen-containing material layer is formed to cover the logic element region and the MEMS region conformally. Then, part of the nitrogen-containing material layer within the MEMS region is removed to form at least one shrinking region. Subsequently, a dielectric layer is formed to cover the logic element region and MEMS region, and the dielectric layer fills in the shrinking region. After that, the dielectric layer is etched to form at least one releasing hole, wherein the shrinking region surrounds the releasing hole. Finally, the substrate is etched to form a chamber.

40. 发明申请

US20170240418A1 LOW-COST MINIATURE MEMS VIBRATION SENSOR 审中-公开
公开(公告)号：US20170240418A1
公开(公告)日：2017-08-24
申请号：US15382581
申请日：2016-12-16
申请人： Knowles Electronics, LLC
发明人： Sarmad Qutub , Martin Volk
IPC分类号： B81B7/00 , H04R19/04
CPC分类号： B81B7/0041 , B81B2201/0285 , B81C1/00269 , B81C2203/0145 , H01L2224/48091 , H01L2224/48137 , H04R1/021 , H04R1/04 , H04R19/04 , H04R2201/003 , H01L2924/00014
摘要： A vibrational sensor comprises a microelectromechanical (MEMS) microphone having a base and a lid defining an enclosure, a MEMS acoustic pressure sensor within the enclosure, and a port defining an opening through the enclosure and material that is arranged to plug the port of the MEMS microphone. In embodiments, the MEMS microphone further includes an integrated circuit within the enclosure that is electrically connected to the MEMS acoustic pressure sensor. In some embodiments, the integrated circuit is configured to bias and buffer the MEMS acoustic pressure sensor. In these and other embodiments, the integrated circuit includes circuitry for conditioning and processing electrical signals generated by the MEMS acoustic pressure sensor. In embodiments, the material is arranged with respect to the port so as to cause the MEMS acoustical pressure sensor to sense vibrational energy rather than acoustic energy as in a conventional MEMS microphone.

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