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31. 发明申请

US20140070900A1 ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND OSCILLATOR 有权
标题翻译：电子设备，其制造方法和振荡器
公开(公告)号：US20140070900A1
公开(公告)日：2014-03-13
申请号：US14018686
申请日：2013-09-05
申请人： Seiko Epson Corporation
发明人： Yoji Kitano , Norio Okuyama
IPC分类号： H05K5/02
CPC分类号： H05K5/0217 , B81B7/0041 , B81B2201/0285 , B81B2203/0118 , B81C2203/0136 , B81C2203/0145 , B81C2203/0163 , H01L23/053 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： An electronic device includes a substrate, a cavity part formed above the substrate with a functional device placed therein, a coating structure that defines the cavity part, and the coating structure has a first surrounding wall formed around the cavity part above the substrate, a second surrounding wall formed around the cavity part above the first surrounding wall, a coating layer that defines an upper surface of the cavity part, wherein the second surrounding wall is located inside the first surrounding wall in a plan view.
摘要翻译：一种电子设备，包括：衬底，形成在衬底上方的功能器件的空腔部分，其中限定空腔部分的涂层结构，并且涂层结构具有围绕衬底上方的空腔部分形成的第一环绕壁，形成在第一周围壁上方的空腔部分周围的围绕壁，其形成限定空腔部分的上表面的涂层，其中第二周围壁在俯视图中位于第一周围壁的内部。

32. 发明申请

US20130241346A1 DEVICE FOR CONVERTING MECHANICAL ENERGY INTO ELECTRICAL ENERGY 审中-公开
标题翻译：将机械能转换为电能的装置
公开(公告)号：US20130241346A1
公开(公告)日：2013-09-19
申请号：US13989885
申请日：2011-11-28
申请人： Sebastien Boisseau , Ghislain Despesse
发明人： Sebastien Boisseau , Ghislain Despesse
IPC分类号： H02N1/00
CPC分类号： H02N1/002 , B81B3/0086 , B81B2201/0285 , H02N1/08 , Y10T29/49226
摘要： An apparatus for converting mechanical vibrational energy into electrical power includes first and second collecting electrodes configured for connection to terminals of an electrical load, and an electret placed facing the first electrode. The electret is mounted so as to move relative to the first electrode in one degree-of-freedom in a plane. Relative movement between the electret and the first electrode induces a potential difference across the electrodes. The electret has a continuous layer and a series of protrusions, each of which extends perpendicular to the plane. These protrusions are distributed in the degree-of-freedom with a first pitch, which is smaller than the travel between the first electrode and the electret. The first electrode has faces facing the electret. These faces are distributed in the degree-of-freedom with a second pitch identical to the first pitch.
摘要翻译：用于将机械振动能转换为电力的装置包括构造成用于连接到电负载的端子的第一和第二集电电极以及面向第一电极放置的驻极体。驻极体被安装成相对于第一电极在平面内的一个自由度上移动。驻极体和第一电极之间的相对运动在电极两端产生电位差。驻极体具有连续层和一系列突起，每个突起垂直于平面延伸。这些突起以比第一电极和驻极体之间的行进小的第一间距以自由度分布。第一电极具有面向驻极体的面。这些面以与第一间距相同的第二间距以自由度分布。

33. 发明申请

US20130192056A1 ELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME WHICH SUPPRESSES LOWERING OF SENSITIVITY WHILE A PROTECTIVE LAYER IS FORMED 审中-公开
标题翻译：机电传感器及制造保护层形成时抑制灵敏度降低的方法
公开(公告)号：US20130192056A1
公开(公告)日：2013-08-01
申请号：US13794412
申请日：2013-03-11
申请人： CANON KABUSHIKI KAISHA
发明人： Chienliu Chang
IPC分类号： H04R31/00
CPC分类号： B81C1/00158 , B06B1/0292 , B81B2201/0285 , H04R19/005 , H04R31/00 , H04R2201/003 , Y10T29/49005 , Y10T29/49007
摘要： An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.
摘要翻译：本发明的机电换能器包括第一电极，通过间隙形成在第一电极上方的振动膜，形成在振动膜上的第二电极和形成在第二电极侧的表面上的绝缘保护层。在振动膜的表面的至少一部分上存在未形成保护层的区域。

34. 发明申请

US20130098155A1 PHYSICAL QUANTITY SENSOR AND METHOD OF MAKING THE SAME 有权
标题翻译：物理量传感器及其制作方法
公开(公告)号：US20130098155A1
公开(公告)日：2013-04-25
申请号：US13711911
申请日：2012-12-12
申请人： Denso Corporation , Toyota Jidosha Kabushiki Kaisha
发明人： Tameharu OHTA , Tetsuo FUJII , Masanobu AZUKAWA , Takeshi ITO , Itaru ISHII
IPC分类号： G01P15/08 , H05K13/00
CPC分类号： G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
摘要翻译：物理量传感器包括传感器部分，壳体和隔振器。壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。隔振器减小传感器部分和壳体之间的相对振动。

35. 发明公开

US20240182293A1 Micro-Electromechanical System 审中-公开
公开(公告)号：US20240182293A1
公开(公告)日：2024-06-06
申请号：US18287721
申请日：2022-04-12
申请人： Technische Universität Wien
发明人： Daniel PLATZ , Ulrich SCHMID , Jonas HAFNER
IPC分类号： B81B3/00 , G01C19/5712 , G01Q60/24 , H10N30/30
CPC分类号： B81B3/0081 , G01C19/5712 , G01Q60/24 , H10N30/302 , H10N30/304 , B81B2201/0235 , B81B2201/0242 , B81B2201/0285
摘要： A micro-electromechanical system (1) comprising: a sensor device (2), with a measuring deformer (3) exhibiting an effective temperature T1; a high-frequency resonator (4) that is mechanically coupled to the sensor device (2) and can interact with the measuring deformer (3); an energy converter (7) that is operatively connected to the high-frequency resonator (4) and is configured to excite the high-frequency resonator (4) into a vibration state, wherein, through the interaction of the vibrating high-frequency resonator (4) with the measuring deformer (3), energy can be transferred from the measuring deformer (3) to the high-frequency resonator (4) in such a manner that the measuring deformer (3) after the energy transfer exhibits an effective temperature T2 lower than T1.

36. 发明申请

US20180174021A9 COMPUTATION DEVICES AND ARTIFICIAL NEURONS BASED ON NANOELECTROMECHANICAL SYSTEMS 审中-公开
公开(公告)号：US20180174021A9
公开(公告)日：2018-06-21
申请号：US14273540
申请日：2014-05-08
申请人： Cornell University
发明人： Amit Lal , Serhan Ardanuc , Jason T. Hoople , Justin C. Kuo
IPC分类号： G06N3/04 , B81B3/00 , H01J49/02 , G06K9/00 , G01S7/521 , G01S15/02
CPC分类号： G06N3/04 , B81B3/0021 , B81B2201/018 , B81B2201/0214 , B81B2201/0285 , B81B2203/04 , G01S7/52079 , G01S7/521 , G01S15/02 , G01S15/8925 , G06K9/0002 , G06N3/0635 , H01H1/0094 , H01J49/025
摘要： Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

37. 发明申请

US20180017387A1 SEGMENTED ELECTRODE STRUCTURE FOR QUADRATURE REDUCTION IN AN INTEGRATED DEVICE 审中-公开
公开(公告)号：US20180017387A1
公开(公告)日：2018-01-18
申请号：US15637955
申请日：2017-06-29
申请人： NXP USA, INC.
发明人： Thierry Cassagnes , Gerhard Trauth , Margaret Leslie Kniffin , Aaron A. Geisberger
IPC分类号： G01C19/5726 , G01C19/5755 , B81C1/00 , G01C19/5769
CPC分类号： G01C19/5726 , B81B2201/0285 , B81C1/00198 , B81C1/00246 , G01C19/5733 , G01C19/5755 , G01C19/5769
摘要： An integrated device includes a MEMS device, such as a gyroscope, having a movable mass spaced apart from a substrate, the movable mass being configured to oscillate in a drive direction relative to the substrate. The integrated device further comprises an integrated circuit (IC) die having a surface coupled with the MEMS device such that the movable mass is interposed between the substrate and the surface of the IC die. An electrode structure is formed on the surface of the IC die, the electrode structure including a plurality of electrode segments vertically spaced apart from the movable mass. Openings extend through the movable mass and the electrode segments overlie the openings. Suitably selected electrode segments can be activated to electrostatically attract the movable mass toward sense electrodes vertically spaced apart from the MEMS to reduce quadrature motion of the movable mass.

38. 发明授权

US09758365B2 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure 有权
公开(公告)号：US09758365B2
公开(公告)日：2017-09-12
申请号：US14821997
申请日：2015-08-10
申请人： GLOBALFOUNDRIES Inc.
发明人： David L. Harame , Anthony K. Stamper
IPC分类号： H01L29/84 , B81B3/00 , H01L21/84 , H01L27/12 , H03H3/02 , H03H9/10 , H03H9/17 , H01L41/113 , H03H1/00 , H03H9/24 , H03H9/15
CPC分类号： B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

39. 发明授权

US09366534B2 Physical quantity sensor and method of making the same 有权
公开(公告)号：US09366534B2
公开(公告)日：2016-06-14
申请号：US14068057
申请日：2013-10-31
申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
IPC分类号： G01C19/56 , B81B7/00 , G01D18/00 , G01P15/08 , H05K13/00
CPC分类号： G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

40. 发明授权

US09105751B2 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure 有权
标题翻译：具有单晶束的集成半导体器件，制造方法和设计结构
公开(公告)号：US09105751B2
公开(公告)日：2015-08-11
申请号：US13294603
申请日：2011-11-11
申请人： David L. Harame , Anthony K. Stamper
发明人： David L. Harame , Anthony K. Stamper
IPC分类号： H01L21/00 , H01L21/84 , H01L27/12 , H03H3/02 , H03H9/10 , H03H9/17 , H01L41/113 , H03H1/00 , H03H9/24 , H03H9/15
CPC分类号： B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
摘要翻译：提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。该方法包括从绝缘体上的硅层形成单晶束。该方法还包括在单晶束上提供绝缘体材料涂层。该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。绝缘体材料保留在单晶束上。该方法还包括在通孔和绝缘体材料上提供牺牲材料。该方法还包括在牺牲材料上提供盖子。该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

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