专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20150165646A1 SAPPHIRE WAFER SQUARING MACHINE WITH DOUBLE SWING CUTTER HEADS 有权
标题翻译：具有双重切割刀头的SAPPHIRE WAFER SQUARING MACHINE
公开(公告)号：US20150165646A1
公开(公告)日：2015-06-18
申请号：US14336169
申请日：2014-07-21
申请人： ECO Power (WUXI) Co., Ltd
发明人： Xinzhong Zhang
IPC分类号： B28D5/04 , B28D5/00
CPC分类号： B28D5/045 , B28D5/0088
摘要： The present disclosure provides a sapphire wafer squaring machine with double swing cutter heads, including a frame, an unwinding mechanism, a winding mechanism, two cutter heads placed at an angle of 90° or 180° between each other, an elevator mechanism for the cutter heads and a revolving table. The unwinding mechanism and the winding mechanism are arranged at both ends of the frame, respectively. Two cutter heads are arranged within the frame. The revolving table is rotatable by an angle of 90°, 180°, 270° or 360° and includes a first table and a second table, which are arranged below the two cutter heads, respectively. The cutter heads of the present disclosure may be swung slightly in cutting, so that the contact area between the fixed-diamond wire and the workpiece under cutting is reduced greatly due to the swing compared with the case where the cutter heads are fixed, thus enhancing the pressure per unit area and the cutting efficiency. Further, the cutter heads are arranged above the workpieces, so that it is easy to load and/or unload the workpieces, and the fixed-diamond wires may be fed from top to bottom in cutting process.
摘要翻译：本公开提供一种具有双摆动刀头的蓝宝石晶片平方机，包括框架，退绕机构，绕线机构，以彼此成90°或180°的角度放置的两个切割头，用于切割器的升降机构头和旋转台。退绕机构和卷绕机构分别设置在框架的两端。两个刀头布置在框架内。旋转台可旋转90°，180°，270°或360°的角度，并且包括分别布置在两个切割头下方的第一台和第二台。本公开的切割头在切割时可能略微摆动，使得与切割头固定的情况相比，固定金刚石线和切割前的工件之间的接触面积因摆动而大大降低，因此增强每单位面积的压力和切割效率。此外，刀头布置在工件上方，使得容易加载和/或卸载工件，并且固定金刚石线可以在切割过程中从上到下进给。

32. 发明申请

US20150158203A1 METHOD FOR SLICING WAFERS FROM A WORKPIECE BY MEANS OF A WIRE SAW 有权
标题翻译：用于通过电线通过工件来切割工件的方法
公开(公告)号：US20150158203A1
公开(公告)日：2015-06-11
申请号：US14557479
申请日：2014-12-02
申请人： Siltronic AG
发明人： Peter Wiesner , Robert Kreuzeder
IPC分类号： B28D5/04
CPC分类号： B28D5/045
摘要： A method for sawing a multiplicity of wafers from a workpiece by means of a wire web of a wire saw includes providing a wire web consisting of a plurality of parallel wire sections. The wire web is spanned by at least two wire guide rollers where each wire guide rollers comprises a core having two side surfaces and a lateral surface. The core is composed of a first material. Each core is rotatably mounted along its longitudinal axis and comprises at least two separate cavities. The lateral surface of each core is enclosed by a jacket composed of a second material. Parallel groves are cut into the jacket for guiding the wire sections of the web. The length of the jacket is altered thermally by means of at least one cavity being filled with a temperature regulating medium.
摘要翻译：通过线锯的丝网从工件锯切多个晶片的方法包括提供由多个平行的线部分组成的导线网。金属丝网由至少两个导丝辊跨过，其中每个导丝辊包括具有两个侧表面和侧面的芯。核心由第一种材料组成。每个芯沿其纵向轴线可旋转地安装并且包括至少两个分离的空腔。每个芯的侧表面由由第二材料构成的护套包围。将平行的圆形切割成夹套以引导网的线段。夹套的长度通过至少一个填充有温度调节介质的空腔热变化。

33. 发明授权

US09050672B2 Wire discharge-machining apparatus with parallel cutting wires 有权
标题翻译：具有平行切割线的排线加工装置
公开(公告)号：US09050672B2
公开(公告)日：2015-06-09
申请号：US12999106
申请日：2009-06-16
申请人： Hidetaka Miyake , Tatsushi Sato
发明人： Hidetaka Miyake , Tatsushi Sato
IPC分类号： B23H7/02 , H01L21/78 , B23H7/10 , B23H1/02 , B23H7/08 , B23H9/00 , B23H11/00 , B28D5/04
CPC分类号： B23H7/02 , B23H1/028 , B23H7/08 , B23H7/10 , B23H7/107 , B23H9/00 , B23H11/006 , B28D5/045
摘要： A wire machining method includes: a wire electrode set as cutting wires provided in parallel with a distance between the cutting wires of which a predetermined regional part faces a workpiece; a machining power source that generates a pulse-shaped machining voltage; and plural feeder units that are electrically connected to the plural cutting wires respectively of the wire electrode and supply the machining voltage between the cutting wires and the workpiece respectively. The feeder units are arranged such that a direction of a current passed to at least a part of the cutting wires becomes a direction different from a direction of a current passed to other cutting wires.
摘要翻译：线加工方法包括：线电极，其设置为与预定区域部分面对工件的切割线之间的距离平行设置的切割线; 产生脉冲状加工电压的加工电源; 以及多个馈电单元，其分别电连接到线电极的多个切割线，并分别在切割线和工件之间提供加工电压。馈送单元被布置成使得通过至少一部分切割线的电流的方向成为不同于传递到其它切割线的电流的方向的方向。

34. 发明授权

US08883564B2 Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and LED luminescent member 有权
标题翻译：包含铝/石墨复合材料的基板，包括其的散热部件和LED发光部件
公开(公告)号：US08883564B2
公开(公告)日：2014-11-11
申请号：US13148977
申请日：2010-02-08
申请人： Hideki Hirotsuru , Satoshi Higuma , Shinya Narita , Yoshihiko Tsujimura
发明人： Hideki Hirotsuru , Satoshi Higuma , Shinya Narita , Yoshihiko Tsujimura
IPC分类号： H01L33/64 , C04B41/88 , H05K1/05 , C04B41/51 , H01L23/373 , H01L23/14 , C04B41/00 , B22F3/26 , C04B111/00
CPC分类号： C04B41/88 , B22F3/26 , B23D57/0023 , B23D61/185 , B28D5/045 , C04B41/009 , C04B41/5155 , C04B2111/00844 , H01L23/142 , H01L23/373 , H01L23/3735 , H01L33/641 , H01L2924/0002 , H05K1/05 , H05K2201/0323 , Y10T83/04 , Y10T428/24273 , Y10T428/24909 , Y10T428/24917 , C04B41/4519 , C04B41/4521 , C04B41/4523 , C04B41/5096 , C04B35/522 , C04B38/00 , H01L2924/00
摘要： A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 μm; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 μm, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×106 to 7.5×10−6/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.3, and a three-point bending strength of 50-150 MPa.
摘要翻译：一种生产基材的方法，其包括在下列条件（1）至（4）中使用多线锯将铝/石墨复合材料加工成厚度为0.5-3mm的板：（1）所述金属丝具有磨料作为选自金刚石，C-BN，碳化硅，氧化铝中的一种或多种物质的平均粒径为10〜100μm的颗粒; （2）电线的直径为0.1-0.3mm; （3）电线以100-700m / min的速度运行; 和（4）以0.1-2mm / min的速率切割复合材料。铝/石墨复合体的表面粗糙度（Ra）为0.1-3μm，25℃下的热导率为150-300W / mK，三个垂直方向的最大值与最小导热率之比为1-1.3，25-150℃的热膨胀系数为4×10 6〜7.5×10 -6 / K，三个垂直方向的最大热膨胀系数与最小值之比为1 -1.3，三点弯曲强度为50-150MPa。

35. 发明授权

US08844511B2 Method for slicing a multiplicity of wafers from a crystal composed of semiconductor material 有权
标题翻译：从由半导体材料构成的晶体上切割多个晶片的方法
公开(公告)号：US08844511B2
公开(公告)日：2014-09-30
申请号：US13009957
申请日：2011-01-20
申请人： Maximilian Kaeser , Albert Blank
发明人： Maximilian Kaeser , Albert Blank
IPC分类号： B28D1/06 , B28D5/04
CPC分类号： B28D5/045
摘要： A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal.
摘要翻译：从晶体中切割多个晶片的方法包括提供具有纵向轴线，横截面和至少一个拉拔边缘的半导体材料的晶体。将晶体固定在桌子上并引导通过由锯线限定的线束，以形成晶片。引导通过工作台和电线组之间的相对运动来提供，使得使用锯线的进入锯切或出口锯切发生在晶体的至少一个拉动边缘附近。

36. 发明申请

US20140261368A1 BANDSAW CUTTING APPARTUS AND METHOD FOR CUTTING INGOT 审中-公开
标题翻译： BANDSAW切割工具和切割工具的方法
公开(公告)号：US20140261368A1
公开(公告)日：2014-09-18
申请号：US14351942
申请日：2012-10-15
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Kazuya Nakagawa
IPC分类号： B28D1/08
CPC分类号： B28D1/08 , B23D55/082 , B23D55/086 , B23D59/04 , B24B27/06 , B28D5/04 , B28D5/045
摘要： The present invention provides a bandsaw cutting apparatus including an actuator configured to move static pressure pads forward and backward in a rotating direction of a blade, and a controller configured to control a movement distance and a movement speed of the static pressure pads to be moved by the actuator, wherein the ingot is cut by feeding the blade relatively downward toward and below the ingot while a rotating blade is guided with static pressure pads, and the movement of the static pressure pads is controlled with the controller. The apparatus can stably suppress a displacement of the blade during cutting, thereby cutting the ingot into blocks or sample wafers for crystal quality evaluation stably with good quality cut surface at a higher cutting rate and extending the lifetime of the blade.
摘要翻译：本发明提供了一种带锯切割装置，其包括致动器，该致动器构造成在叶片的旋转方向上向前和向后移动静压垫;以及控制器，被配置为控制静压垫的移动距离和运动速度，致动器，其中通过在旋转叶片被静压垫引导的同时向刀片向下并且在刀片下方供给刀片来切割锭，并且通过控制器控制静压片的移动。该设备可以稳定地抑制切割期间刀片的位移，从而以更高的切割速率以优良的切割面稳定地将锭切割成用于晶体质量评估的块或样品晶片，并延长刀片的寿命。

37. 发明申请

US20140182776A1 Methods For Producing Rectangular Seeds For Ingot Growth 有权
标题翻译：用于生产长方形种子用于生长的方法
公开(公告)号：US20140182776A1
公开(公告)日：2014-07-03
申请号：US13731528
申请日：2012-12-31
申请人： MEMC SINGAPORE, PTE. LTD (UEN200614797D)
发明人： Jihong John Chen , Susan S. Dwyer , Shawn Hayes , Tom Doane , Dale A. Witte , Linda K. Swiney , Travis Hambach
IPC分类号： H01L21/02
CPC分类号： C30B11/14 , B28D5/045 , C30B29/06 , C30B33/06 , H01L21/02 , H01L21/02005 , Y10T156/1052
摘要： A method of producing rectangular seeds for use in semiconductor or solar material manufacturing includes connecting an adhesive layer to a top surface of a template, the template including a plurality of parallel slots, and drawing alignment lines on the adhesive layer, the alignment lines aligned with at least some of the parallel slots. The method also includes connecting quarter sections to the alignment layer such that an interface between a rectangular seed portion and a curved wing portion of each quarter section is aligned with at least one of the alignment lines drawn on the adhesive layer, and slicing each of the quarter sections to separate the rectangular seed portions from the curved wing portions.
摘要翻译：制造用于半导体或太阳能材料制造的矩形晶种的方法包括将粘合剂层连接到模板的顶表面，模板包括多个平行的狭槽，并且在粘合剂层上绘制对准线，对准线与至少一些并行插槽。该方法还包括将四分之一部分连接到对准层，使得矩形种子部分和每个四分之一部分的弯曲翼部分之间的界面与在粘合剂层上绘制的至少一个对准线对准，并且将四分之一部分以将矩形种子部分与弯曲的翼部分隔开。

38. 发明申请

US20140150766A1 ABRASIVE ARTICLE AND METHOD OF FORMING 审中-公开
标题翻译：磨砂制品和成型方法
公开(公告)号：US20140150766A1
公开(公告)日：2014-06-05
申请号：US13930577
申请日：2013-06-28
申请人： Wei Che , Avanti Jain , Christopher Arcona , Yinggang Tian , Paul W. Rehrig
发明人： Wei Che , Avanti Jain , Christopher Arcona , Yinggang Tian , Paul W. Rehrig
IPC分类号： B28D5/04 , B28D1/12
CPC分类号： B28D5/045 , B24B27/0633 , B28D1/124 , C09K3/1409 , C09K3/1445
摘要： A method of conducting a cutting operation on a workpiece including providing an abrasive article having a substrate having an elongated body, a tacking layer overlying the substrate, and a first type of abrasive particle contained in the tacking layer, the method further including moving the abrasive article and a workpiece relative to each other, the workpiece including a material selected from the group consisting of a ceramic, a semiconductive material, an insulating material, a glass, a natural material, organic material, and a combination thereof.
摘要翻译：一种在工件上进行切割操作的方法，包括提供具有基材的磨料制品，所述基材具有细长体，覆盖在基底上的粘合层以及包含在粘合层中的第一类型磨料颗粒，该方法还包括使磨料制品和工件相对于彼此，所述工件包括选自陶瓷，半导体材料，绝缘材料，玻璃，天然材料，有机材料及其组合的材料。

39. 发明申请

US20140087113A1 METHOD OF GROWING GROUP III NITRIDE CRYSTALS 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：US20140087113A1
公开(公告)日：2014-03-27
申请号：US13834015
申请日：2013-03-15
申请人： Seoul Semiconductor Co., Ltd. , SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L29/20 , C30B29/40 , C30B7/10
CPC分类号： C30B29/406 , B28D5/045 , C30B7/10 , C30B7/105 , C30B25/20 , C30B29/403 , C30B29/64 , C30B33/06 , H01L21/02389 , H01L21/0254 , H01L21/02628 , H01L29/045 , H01L29/2003 , H01L29/32 , Y10S117/902 , Y10T428/192
摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
摘要翻译：本发明提供一种生长III族氮化物锭的方法。 III族氮化物晶体如GaN通过氨热法在种子的两侧生长以形成锭，并将晶锭切成晶片。将包括第一代种子的晶片切成比其他晶片厚，使得包括第一代种子的晶片不破裂。包括第一代晶种的晶片可以用作下一个氨热生长的种子。

40. 发明申请

US20140083407A1 WAFER SAWING SYSTEM 审中-公开
标题翻译： WAFER SAWING系统
公开(公告)号：US20140083407A1
公开(公告)日：2014-03-27
申请号：US13657306
申请日：2012-10-22
申请人： Andreas Schmid , Antoine P. Manens , Romain Beau De Lomenie , Richard Fay , Franck Genonceau
发明人： Andreas Schmid , Antoine P. Manens , Romain Beau De Lomenie , Richard Fay , Franck Genonceau
IPC分类号： B28D5/04
CPC分类号： B28D5/045 , B23D57/0053
摘要： A wafer sawing system and a method of sawing an ingot in a wafer sawing system are described. The system includes an ingot input module, an ingot output module, two or more wire sawing chambers that each comprise: two wire guide cylinders, at least one wire disposed across both of the wire guide cylinders, a support table that is configured to receive a single ingot, and an ingot positioning system that is configured to urge the single ingot disposed on the support table against the at least one wire, and a robot that is configured to transfer the single ingot between the ingot input module, at least one of the two or more wire sawing chambers and the ingot output chamber.
摘要翻译：描述了晶片锯切系统和在晶圆锯切系统中锯锭的方法。该系统包括铸锭输入模块，铸块输出模块，两个或多个钢丝锯切槽，每个钢丝锯切槽包括：两个导丝筒，至少一个布置在两个导丝筒上的丝;支撑台，单锭和锭定位系统，其被构造成推动设置在所述支撑台上的所述单个铸锭抵靠所述至少一根钢丝;以及机器人，所述机器人被配置为在所述铸锭输入模块之间传送所述单锭，两个或更多个线锯槽和锭输出室。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式