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31. 发明申请

US20090230883A1 Stacked LED Controllers 有权
标题翻译：堆叠LED控制器
公开(公告)号：US20090230883A1
公开(公告)日：2009-09-17
申请号：US12050134
申请日：2008-03-17
申请人： Eberhard Haug
发明人： Eberhard Haug
IPC分类号： H05B37/02
CPC分类号： H05B33/083
摘要： A driver for driving a plurality of light emitting diodes (LEDs) is formed of a plurality of LED controllers connected in series between a power supply and a reference voltage. Each controller drives one or more LEDs directly connected to it. Each controller has a voltage input terminal coupled to an output terminal of an adjacent upstream controller, and an output terminal coupled to the voltage input terminal of an adjacent downstream controller. Each controller has a normally-on bypass switch coupled between its voltage input terminal and the voltage input terminal of the adjacent upstream controller. The bypass switch completely bypasses the adjacent upstream controller when the adjacent downstream controller detects that its input voltage is below a threshold insufficient to drive the LED in the adjacent upstream controller. The bypass switch is turned off if the voltage is above the threshold.
摘要翻译：用于驱动多个发光二极管（LED）的驱动器由串联连接在电源和参考电压之间的多个LED控制器形成。每个控制器驱动直接连接到它的一个或多个LED。每个控制器具有耦合到相邻上游控制器的输出端子的电压输入端子和耦合到相邻下游控制器的电压输入端子的输出端子。每个控制器具有耦合在其电压输入端子和相邻上游控制器的电压输入端子之间的常开旁路开关。当相邻的下游控制器检测到其输入电压低于不足以驱动相邻上游控制器中的LED时，旁路开关完全绕过相邻的上游控制器。如果电压高于阈值，旁路开关将被关闭。

32. 发明授权

US07573098B2 Transistors fabricated using a reduced cost CMOS process 有权
标题翻译：使用降低成本的CMOS工艺制造的N沟道MOS晶体管
公开(公告)号：US07573098B2
公开(公告)日：2009-08-11
申请号：US11833138
申请日：2007-08-02
申请人： Martin Alter
发明人： Martin Alter
IPC分类号： H01L29/78
CPC分类号： H01L29/1083 , H01L21/8238 , H01L29/78
摘要： An NMOS transistor includes a semiconductor substrate of a first conductivity type, first and second well regions of a second conductivity type formed spaced apart in the substrate, a conductive gate formed over the region between the spaced apart first and second well regions where the region of the substrate between the spaced apart first and second well regions forms the channel region, dielectric spacers formed on the sidewalls of the conductive gate, first and second heavily doped source and drain regions of the second conductivity type formed in the semiconductor substrate and being self-aligned to the edges of the dielectric spacers. The first and second well regions extend from the respective heavily doped regions through an area under the spacers to the third well region. The first and second well regions bridge the source and drain regions to the channel region of the transistor formed by the third well.
摘要翻译： NMOS晶体管包括在衬底中间隔开形成的第一导电类型的第二导电类型的第一和第二阱区的半导体衬底，形成在间隔开的第一和第二阱区之间的区域上的导电栅极，在间隔开的第一和第二阱区域之间的衬底形成沟道区，形成在导电栅极的侧壁上的电介质间隔物，形成在半导体衬底中的第二和第二重掺杂的第二导电类型的源极和漏极区，对准电介质间隔物的边缘。第一和第二阱区域从相应的重掺杂区域延伸穿过垫片下面的区域到第三阱区域。第一阱区和第二阱区将源区和漏区连接到由第三阱形成的晶体管的沟道区。

33. 发明申请

US20090190621A1 Laser Turn-On Accelerator Independent of Bias Control Loop Bandwidth 有权
标题翻译：激光开启加速器，独立于偏置控制环路带宽
公开(公告)号：US20090190621A1
公开(公告)日：2009-07-30
申请号：US12416576
申请日：2009-04-01
申请人： Douglas P. Anderson , Peter Chambers , Joseph J. Judkins, III , William Andrew Burkland
发明人： Douglas P. Anderson , Peter Chambers , Joseph J. Judkins, III , William Andrew Burkland
IPC分类号： H01S3/10
CPC分类号： H01S5/06825 , H01S5/0683
摘要： An accelerator circuit is incorporated in a laser diode system for accelerating the turn-on operation of the laser diode independent of the control loop bandwidth of the laser diode system. The accelerator circuit provides a boost current to a compensation capacitor upon laser turn-on which compensation capacitor operates to establish the control loop bandwidth of the laser diode system. The boost current enables the control loop to increase the bias current to the laser diode quickly. When the laser diode reaches the desired operating point, the boost current is terminated and the control loop of the laser diode system resumes normal control of the bias current. In one embodiment, the accelerator circuit includes a timer circuit controlling a current source to implement open loop turn-on control. In another embodiment, the accelerator circuit includes a comparator circuit working in conjunction with an one-shot logic circuit for providing close loop control.
摘要翻译：加速器电路被并入激光二极管系统中，用于加速激光二极管的导通操作，而与激光二极管系统的控制回路带宽无关。加速器电路在激光接通时向补偿电容器提供升压电流，补偿电容器用于建立激光二极管系统的控制回路带宽。升压电流使控制环能够快速增加激光二极管的偏置电流。当激光二极管达到所需的工作点时，升压电流终止，激光二极管系统的控制回路恢复正常的偏置电流控制。在一个实施例中，加速器电路包括控制电流源以实现开环开启控制的定时器电路。在另一个实施例中，加速器电路包括与单触发逻辑电路结合工作以提供闭环控制的比较器电路。

34. 发明申请

US20090184655A1 POWER MANAGEMENT SYSTEM FOR LIGHT EMITTING DIODES 审中-公开
标题翻译：用于发光二极管的电源管理系统
公开(公告)号：US20090184655A1
公开(公告)日：2009-07-23
申请号：US12017474
申请日：2008-01-22
申请人： Ira G. Miller , Eduardo Velarde
发明人： Ira G. Miller , Eduardo Velarde
IPC分类号： H05B37/02
CPC分类号： H05B33/0815
摘要： A power management system comprising: providing a one pin driver circuit; sourcing a managed current from the one pin driver circuit; and illuminating a light emitting diode by the managed current including reducing the managed current when the light emitting diode is not coupled.
摘要翻译：一种电源管理系统，包括：提供一个引脚驱动电路; 从一个引脚驱动器电路采集管理电流; 以及通过所述管理电流照射发光二极管，包括当所述发光二极管未耦合时降低所述管理电流。

35. 发明授权

US07560988B2 Integrated circuit system for line regulation of an amplifier 有权
标题翻译：用于放大器线路调节的集成电路系统
公开(公告)号：US07560988B2
公开(公告)日：2009-07-14
申请号：US11779207
申请日：2007-07-17
申请人： Matthew Weng , Charles Vinn
发明人： Matthew Weng , Charles Vinn
IPC分类号： H03F3/45
CPC分类号： H03F3/45183 , H03F1/342 , H03F3/45636 , H03F2200/135 , H03F2203/45336 , H03F2203/45356 , H03F2203/45722
摘要： An integrated circuit system is provided including forming a differential pair; reducing a mismatch in the differential pair by: coupling an amplifier to the differential pair; and coupling a local feedback network to the amplifier in which referencing the local feedback network includes coupling a first voltage; and driving an output transistor by the amplifier.
摘要翻译：提供集成电路系统，包括形成差分对; 通过以下步骤减小差分对的失配：将放大器耦合到差分对; 以及将本地反馈网络耦合到所述放大器，其中参考所述局部反馈网络包括耦合第一电压; 并由放大器驱动输出晶体管。

36. 发明申请

US20090176181A1 SYSTEM AND METHOD OF IMPROVED PRESSURE CONTROL IN HORIZONTAL DIFFUSION FURNACE SCAVENGER SYSTEM FOR CONTROLLING SILICON OXIDE GROWTH 有权
标题翻译：用于控制氧化硅生长的水平扩散炉加热器系统中改进压力控制的系统和方法
公开(公告)号：US20090176181A1
公开(公告)日：2009-07-09
申请号：US11938438
申请日：2007-11-12
申请人： Miles DUDMAN
发明人： Miles DUDMAN
IPC分类号： C30B31/10 , C30B31/18 , F27B5/04 , F27B5/18 , F27B9/04 , H01L21/677 , H01L21/316
CPC分类号： H01L21/67754 , C30B31/18 , F27B17/0025 , F27D19/00 , H01L21/3143 , H01L21/67126 , H01L21/67178 , H01L21/67253
摘要： The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
摘要翻译：本发明一般涉及半导体晶片制造，更具体地但非排他地涉及用于使用压力控制氧化物形成的先进工艺控制方法。在一个或多个实施方案中，本发明包括压力稳定系统，用于相对于压力形成范围，值或晶片制造过程中的一个或多个压力指示器在晶片制造期间动态地调节炉中的清除剂压力。

37. 发明申请

US20090140579A1 Relay Switch Including an Energy Detection Circuit 有权
标题翻译：包括能量检测电路的继电器开关
公开(公告)号：US20090140579A1
公开(公告)日：2009-06-04
申请号：US12365858
申请日：2009-02-04
申请人： Menping Chang , Jing Tian
发明人： Menping Chang , Jing Tian
IPC分类号： H02H3/42
CPC分类号： H04L12/10 , H01L2224/48137 , H01L2224/49175 , H01L2924/00014 , H01L2924/13091 , H01L2924/3011 , H04L49/40 , Y10S307/01 , Y10T307/766 , Y10T307/832 , H01L2924/00 , H01L2224/45099
摘要： A semiconductor relay switch having two data ports receiving incoming signals and a power supply terminal receiving a power supply voltage is responsive to a power supply voltage level and an energy level of the incoming signals to open and close its conduction paths. The relay switch is open when a valid power supply level is detected and when there is no supply power on the power supply terminal but a high energy level is detected in the incoming signals. The relay switch is closed to allow conduction between the two data ports only when there is no power supply voltage on the power supply terminal and an energy level below a predetermined threshold is detected in the incoming signals. In one embodiment, the semiconductor relay switch includes a main conduction switch circuit, an energy detect circuit and a control signal generator.
摘要翻译：具有接收输入信号的两个数据端口和接收电源电压的电源端子的半导体继电器开关响应于电源电压电平和输入信号的能级以打开和闭合其导通路径。当检测到有效的电源电平时，以及当电源端子没有电源但在输入信号中检测到高能量电平时，继电器开关打开。继电器开关闭合，仅在电源端子上没有电源电压并且在输入信号中检测到低于预定阈值的能量水平时才允许两个数据端口之间导通。在一个实施例中，半导体继电器开关包括主导通开关电路，能量检测电路和控制信号发生器。

38. 发明授权

US07532653B2 Laser turn-on accelerator independent of bias control loop bandwidth 有权
标题翻译：激光打开加速器独立于偏置控制环路带宽
公开(公告)号：US07532653B2
公开(公告)日：2009-05-12
申请号：US11559255
申请日：2006-11-13
申请人： Douglas P. Anderson , Peter Chambers , Joseph J. Judkins, III , William Andrew Burkland
发明人： Douglas P. Anderson , Peter Chambers , Joseph J. Judkins, III , William Andrew Burkland
IPC分类号： H01S3/00
CPC分类号： H01S5/06825 , H01S5/0683
摘要： An accelerator circuit is incorporated in a laser diode system for accelerating the turn-on operation of the laser diode independent of the control loop bandwidth of the laser diode system. The accelerator circuit provides a boost current to a compensation capacitor upon laser turn-on which compensation capacitor operates to establish the control loop bandwidth of the laser diode system. The boost current enables the control loop to increase the bias current to the laser diode quickly. When the laser diode reaches the desired operating point, the boost current is terminated and the control loop of the laser diode system resumes normal control of the bias current. In one embodiment, the accelerator circuit includes a timer circuit controlling a current source to implement open loop turn-on control. In another embodiment, the accelerator circuit includes a comparator circuit working in conjunction with an one-shot logic circuit for providing close loop control.
摘要翻译：加速器电路被并入激光二极管系统中，用于加速激光二极管的导通操作，而与激光二极管系统的控制回路带宽无关。加速器电路在激光接通时向补偿电容器提供升压电流，补偿电容器用于建立激光二极管系统的控制回路带宽。升压电流使控制环能够快速增加激光二极管的偏置电流。当激光二极管达到所需的工作点时，升压电流终止，激光二极管系统的控制回路恢复正常的偏置电流控制。在一个实施例中，加速器电路包括控制电流源以实现开环开启控制的定时器电路。在另一个实施例中，加速器电路包括与单触发逻辑电路结合工作以提供闭环控制的比较器电路。

39. 发明授权

US07528555B2 LED controller IC using only one pin to dim and set a maximum LED current 有权
标题翻译： LED控制器IC仅使用一个引脚来调光并设置最大LED电流
公开(公告)号：US07528555B2
公开(公告)日：2009-05-05
申请号：US11832321
申请日：2007-08-01
申请人： Christian Gater
发明人： Christian Gater
IPC分类号： G05F1/00
CPC分类号： H05B33/0848 , H05B33/0827
摘要： An LED driver IC is described that uses a single pin to both set the maximum current through one or more driven LEDs and variably control the brightness of the LEDs. A single resistor is connected to the control pin of the IC, where the value of the resistor sets the maximum current through the LEDs. A PWM source, outputting a pulse train at a particular duty cycle, is connected to the other end of the resistor, where the duty cycle controls the LED brightness level. When the PWM signal is low (e.g. ground), a sample and hold circuit connects the output of a feedback control voltage to an Imax current source to set a maximum current based on the external resistor value. An inverse of the duty cycle of the PWM controller controls a current Idim that is subtracted from the maximum current Imax set by the resistor. This difference current is used to control drivers for the LEDs.
摘要翻译：描述了一种LED驱动器IC，其使用单个引脚来设置通过一个或多个驱动LED的最大电流并且可变地控制LED的亮度。单个电阻连接到IC的控制引脚，其中电阻值通过LED设置最大电流。以特定占空比输出脉冲序列的PWM源连接到电阻器的另一端，其中占空比控制LED亮度级别。当PWM信号为低电平（例如接地）时，采样和保持电路将反馈控制电压的输出连接到Imax电流源，以根据外部电阻值设置最大电流。 PWM控制器的占空比的倒数控制从电阻器设置的最大电流Imax中减去的电流Idim。该差分电流用于控制LED的驱动器。

40. 发明授权

US07514318B2 Method for fabricating non-volatile memory cells 有权
标题翻译：制造非易失性存储单元的方法
公开(公告)号：US07514318B2
公开(公告)日：2009-04-07
申请号：US12016904
申请日：2008-01-18
申请人： Paul M. Moore
发明人： Paul M. Moore
IPC分类号： H01L21/8242
CPC分类号： H01L29/66825 , H01L27/115 , H01L27/11521 , H01L27/11558 , H01L29/788
摘要： A method for fabricating non-volatile memory cells is provided. The method includes providing a substrate, forming a first dopant region in the substrate, forming a second dopant region in the first dopant region, growing a first isolation region over a first portion of the substrate, the first dopant region, and the second dopant region, growing a second isolation region over a second portion of the substrate, the first dopant region, and the second dopant region, defining a contact region in the second dopant region, the contact region extending between the first isolation region and the second isolation region, depositing a gate oxide layer to form a first gate dielectric atop the first isolation region and a portion of the contact region, and overlaying a gate conductive layer on top of the gate oxide layer to form a first gate conductor atop the first gate dielectric.
摘要翻译：提供了制造非易失性存储单元的方法。该方法包括提供衬底，在衬底中形成第一掺杂区，在第一掺杂区中形成第二掺杂区，在衬底的第一部分，第一掺杂区和第二掺杂区上生长第一隔离区在衬底的第二部分上生长第二隔离区域，第一掺杂区域和第二掺杂剂区域，限定第二掺杂区域中的接触区域，在第一隔离区域和第二隔离区域之间延伸的接触区域，沉积栅极氧化物层以在第一隔离区域和接触区域的一部分顶部形成第一栅极电介质，并且在栅极氧化物层的顶部上覆盖栅极导电层，以在第一栅极电介质顶部形成第一栅极导体。

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