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31. 发明申请

US20050087226A1 Electrode arranging method 审中-公开
标题翻译：电极排列方法
公开(公告)号：US20050087226A1
公开(公告)日：2005-04-28
申请号：US10957577
申请日：2004-10-05
申请人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L21/28 , H01L31/00 , H01L31/04
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.
摘要翻译：根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率太阳能电池。

32. 发明授权

US07407547B2 Liquid-phase growth apparatus and method 失效
标题翻译：液相生长装置及方法
公开(公告)号：US07407547B2
公开(公告)日：2008-08-05
申请号：US11270562
申请日：2005-11-10
申请人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B11/02
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译：用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。衬底保持器包括连接器，接收部件和推动部件。接收部件和推动部件彼此相对并且通过连接器连接。推动部件保持基板的上部，而接收部件保持基板的下部。将含有垂直保持的基板的基板保持器浸入溶液中。接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

33. 发明申请

US20050066881A1 Continuous production method for crystalline silicon and production apparatus for the same 审中-公开
标题翻译：晶体硅的连续生产方法及其制造装置
公开(公告)号：US20050066881A1
公开(公告)日：2005-03-31
申请号：US10938509
申请日：2004-09-13
申请人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
发明人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： H01L31/182 , C30B28/08 , C30B28/10 , C30B29/06 , Y02E10/546 , Y02P70/521 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.
摘要翻译：提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状并且保持在比原料硅的熔点高的温度。该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。

34. 发明授权

US06872248B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US06872248B2
公开(公告)日：2005-03-29
申请号：US10400636
申请日：2003-03-28
申请人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , C30B19/04 , C30B19/10
CPC分类号： C30B19/068 , C30B19/062 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。适用于实施所述液相生长过程的液相生长装置。

35. 发明授权

US07022181B2 Liquid phase growth process, liquid phase growth system and substrate member production method 失效
公开(公告)号：US07022181B2
公开(公告)日：2006-04-04
申请号：US10014418
申请日：2001-12-14
申请人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
发明人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B19/00
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06 , Y10S117/911
摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

36. 发明授权

US06824609B2 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06824609B2
公开(公告)日：2004-11-30
申请号：US10229123
申请日：2002-08-28
申请人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
发明人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/064 , C30B19/02 , C30B19/06 , C30B29/06 , Y10S117/90 , Y10T117/1016 , Y10T117/1024
摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.
摘要翻译：提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

37. 发明授权

US06500731B1 Process for producing semiconductor device module 失效
标题翻译：半导体器件模块的制造工艺
公开(公告)号：US06500731B1
公开(公告)日：2002-12-31
申请号：US09662604
申请日：2000-09-14
申请人： Katsumi Nakagawa , Shoji Nishida
发明人： Katsumi Nakagawa , Shoji Nishida
IPC分类号： H01L2146
CPC分类号： H01L21/6835 , H01L21/76259 , H01L21/76838 , H01L31/022433 , H01L31/0475 , H01L31/048 , H01L31/1804 , H01L31/1896 , H01L2221/68359 , H01L2924/3025 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor device module comprises the steps of forming a first substrate having a separation layer having thereon a plurality of independent semiconductor layers and semiconductor devices individually formed on the plurality of semiconductor layers, electrically connecting the semiconductor devices one another on the first substrate, and separating the plurality of semiconductor layers from the first substrate at the separation layer to transfer the semiconductor layers to a second substrate.
摘要翻译：一种制造半导体器件模块的方法包括以下步骤：形成具有分离层的第一衬底，其上具有多个独立的半导体层和分别形成在所述多个半导体层上的半导体器件，所述半导体器件分别形成在所述多个半导体层上，衬底，并且在分离层处将多个半导体层与第一衬底分离，以将半导体层转移到第二衬底。

38. 发明授权

US06391108B2 Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus 失效
标题翻译：硅晶体的液相生长方法，太阳能电池的制造方法以及液相生长装置
公开(公告)号：US06391108B2
公开(公告)日：2002-05-21
申请号：US09208377
申请日：1998-12-10
申请人： Shoji Nishida , Katsumi Nakagawa , Noritaka Ukiyo , Masaaki Iwane
发明人： Shoji Nishida , Katsumi Nakagawa , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： C30B1900
CPC分类号： C30B19/06 , C30B19/02 , C30B29/06
摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.
摘要翻译：提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有至少硅原子进入溶剂。这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

39. 发明授权

US07282190B2 Silicon layer production method and solar cell production method 失效
标题翻译：硅层生产方法和太阳能电池生产方法
公开(公告)号：US07282190B2
公开(公告)日：2007-10-16
申请号：US10563115
申请日：2005-05-17
申请人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
发明人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
IPC分类号： C01B33/26 , C30B15/20
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02658 , Y02E10/546 , Y02P70/521
摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.
摘要翻译：通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成硅层中的pn结。因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。

40. 发明授权

US06231667B1 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06231667B1
公开(公告)日：2001-05-15
申请号：US09200867
申请日：1998-11-27
申请人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
发明人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
IPC分类号： C30B1906
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06
摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.
摘要翻译：浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作在退火室中进行与上述基板不同的另一基板。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为在退火室中进行。这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。此外，还提供了液相生长方法。

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