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1. 发明授权

US06231667B1 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06231667B1
公开(公告)日：2001-05-15
申请号：US09200867
申请日：1998-11-27
申请人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
发明人： Masaaki Iwane , Isao Tanikawa , Katsumi Nakagawa , Tatsumi Shoji , Shoji Nishida , Noritaka Ukiyo
IPC分类号： C30B1906
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06
摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.
摘要翻译：浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作在退火室中进行与上述基板不同的另一基板。浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为在退火室中进行。这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。此外，还提供了液相生长方法。

2. 发明授权

US06802900B2 Liquid phase growth methods and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06802900B2
公开(公告)日：2004-10-12
申请号：US10022545
申请日：2001-12-20
申请人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/02 , C30B19/04 , C30B19/06 , C30B19/08
摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
摘要翻译：提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

3. 发明授权

US07022181B2 Liquid phase growth process, liquid phase growth system and substrate member production method 失效
公开(公告)号：US07022181B2
公开(公告)日：2006-04-04
申请号：US10014418
申请日：2001-12-14
申请人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
发明人： Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B19/00
CPC分类号： C30B19/062 , C30B19/00 , C30B29/06 , Y10S117/911
摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

4. 发明授权

US06953506B2 Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same 失效
标题翻译：晶圆盒，液相生长系统和液相生长工艺，使用它们
公开(公告)号：US06953506B2
公开(公告)日：2005-10-11
申请号：US09978633
申请日：2001-10-18
申请人： Masaaki Iwane , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B19/06 , H01L21/00 , H01L21/673 , H01L21/8242
CPC分类号： H01L21/67086 , H01L21/67207 , H01L21/67236 , H01L21/6732 , H01L21/67326 , H01L21/67346 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521 , Y10S117/911 , Y10S414/135 , Y10T117/10 , Y10T117/1024
摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.
摘要翻译：晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于它的凹陷和盖子在其开口的边缘。还公开了利用晶片盒的液相生长系统和液相生长工艺。

5. 发明授权

US06951584B2 Apparatus for producing semiconductor thin films on moving substrates 失效
标题翻译：用于在移动基板上制造半导体薄膜的装置
公开(公告)号：US06951584B2
公开(公告)日：2005-10-04
申请号：US10364517
申请日：2003-02-12
申请人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
发明人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B19/06 , C30B31/04
CPC分类号： C30B29/06 , C30B19/062
摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
摘要翻译：一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动解决方案。每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动。

6. 发明授权

US07175706B2 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US07175706B2
公开(公告)日：2007-02-13
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C30B11/14
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

7. 发明授权

US06551908B2 Method for producing semiconductor thin films on moving substrates 失效
标题翻译：在移动基板上制造半导体薄膜的方法
公开(公告)号：US06551908B2
公开(公告)日：2003-04-22
申请号：US09964332
申请日：2001-09-28
申请人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
发明人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B100
CPC分类号： C30B29/06 , C30B19/062
摘要： A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
摘要翻译：一种制造半导体薄膜的方法，其中通过将多个基板浸入坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液含有半导体作为溶质，同时将其移动到解决方案。每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动。

8. 发明授权

US06682990B1 Separation method of semiconductor layer and production method of solar cell 失效
标题翻译：半导体层的分离方法和太阳能电池的制造方法
公开(公告)号：US06682990B1
公开(公告)日：2004-01-27
申请号：US09656014
申请日：2000-09-07
申请人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L2130
CPC分类号： H01L31/1804 , H01L21/67207 , H01L21/6835 , H01L21/76259 , H01L31/0504 , H01L31/1892 , H01L2221/68368 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.
摘要翻译：根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。

9. 发明申请

US20060194417A1 Polycrystalline sillicon substrate 审中-公开
标题翻译：多晶硅衬底
公开(公告)号：US20060194417A1
公开(公告)日：2006-08-31
申请号：US10530189
申请日：2003-10-10
申请人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
发明人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L31/0376 , H01L21/20
CPC分类号： C30B29/06 , C30B11/00 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
摘要翻译：一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

10. 发明授权

US06391108B2 Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus 失效
标题翻译：硅晶体的液相生长方法，太阳能电池的制造方法以及液相生长装置
公开(公告)号：US06391108B2
公开(公告)日：2002-05-21
申请号：US09208377
申请日：1998-12-10
申请人： Shoji Nishida , Katsumi Nakagawa , Noritaka Ukiyo , Masaaki Iwane
发明人： Shoji Nishida , Katsumi Nakagawa , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： C30B1900
CPC分类号： C30B19/06 , C30B19/02 , C30B29/06
摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.
摘要翻译：提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有至少硅原子进入溶剂。这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

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