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31. 发明申请

US20080283884A1 CMOS IMAGE DEVICE WITH POLYSILICON CONTACT STUDS 有权
公开(公告)号：US20080283884A1
公开(公告)日：2008-11-20
申请号：US12124270
申请日：2008-05-21
申请人： Young-Hoon Park
发明人： Young-Hoon Park
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14636
摘要： A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS transistors and pMOS transistors, and contact studs formed on the floating diffusion region and the junction region in the pixel array region, the contact studs comprising impurity-doped polysilicon layers.

32. 发明申请

US20070141682A1 Microorganism producing 5'-xanthylic acid 有权
标题翻译：微生物产生5'-戊酸
公开(公告)号：US20070141682A1
公开(公告)日：2007-06-21
申请号：US10582166
申请日：2004-11-18
申请人： Young-Hoon Park , Jea-Young Chang , Jin-Nam Lee , Ki-Hoon Oh , Jeong-Hwan Kim , Yoon-Suk Oh , Jae-Ick Sim
发明人： Young-Hoon Park , Jea-Young Chang , Jin-Nam Lee , Ki-Hoon Oh , Jeong-Hwan Kim , Yoon-Suk Oh , Jae-Ick Sim
IPC分类号： C12P17/00 , C12N1/21
CPC分类号： C12P19/32 , C12R1/15 , Y10S435/822 , Y10S435/843
摘要： The invention relates to a microorganism, obtained by treating Corynebacterium ammoniagenes KCCM 10488 producing 5′-Xanthylic acid as parent strain with UV radiation and mutation Derivatives such as N-methyl-N′nitro-N-nitrosoguanidine (NTG), Having a resistance to 5-fluorotryptophan which enhances Biosynthesis of N5-N10-tetrahydrofolate used for transferring Two formyl group during the process of puring biosynthesis, making It possible to accumulate 5′xanthylic acid in culture medium at a high Yield and high concentration rate same period of fermentation.
摘要翻译：本发明涉及通过用UV辐射和突变衍生物如N-甲基-N'-硝基-N-亚硝基胍（NTG）处理产生5'-辛酸作为亲本菌株的产氨基酸棒杆菌KCCM10488得到的微生物，具有抗 5-fluorotryptophan，其增强用于转移的N5-N10-四氢叶酸的生物合成在生物合成过程中两个甲酰基，使得在相同发酵时间的高收率和高浓度下可以在培养基中积累5'叶酸。

33. 发明申请

US20070075338A1 Image sensor and fabrication method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070075338A1
公开(公告)日：2007-04-05
申请号：US11542340
申请日：2006-10-03
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
IPC分类号： H01L29/768
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
摘要翻译：图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱，不包括多个第一导电型光电二极管。此外，第一个深阱电连接到正电压。

34. 发明申请

US20060291115A1 Semiconductor integrated circuit device and method of fabricating the same 审中-公开
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20060291115A1
公开(公告)日：2006-12-28
申请号：US11472374
申请日：2006-06-22
申请人： Jae-Ho Song , Young-Hoon Park , Eun-Soo Kim
发明人： Jae-Ho Song , Young-Hoon Park , Eun-Soo Kim
IPC分类号： H02H9/00
CPC分类号： H01L27/14601 , H01L27/1463
摘要： Provided are a semiconductor integrated circuit (IC) device and a method of fabricating the same. The semiconductor IC device may include first, second and third deep wells of a first conductivity type formed in a semiconductor substrate, and electrically isolated from one another; first and second wells of a second conductivity type and an active pixel sensor (APS) array formed between a top surface of the semiconductor substrate and the first, second and third deep wells, respectively; and first, second and third protective wells of the first conductivity type formed in the semiconductor substrate. The first and second wells of the second conductivity type and the APS array may be connected to different power supply voltages. The first, second and third protective wells of the first conductivity type may surround side surfaces of the first and second wells and the APS array, respectively.
摘要翻译：提供一种半导体集成电路（IC）装置及其制造方法。半导体IC器件可以包括形成在半导体衬底中并且彼此电隔离的第一导电类型的第一，第二和第三深阱; 分别形成在半导体衬底的顶表面和第一，第二和第三深孔之间的第二导电类型的第一和第二阱和有源像素传感器（APS）阵列; 以及形成在半导体衬底中的第一导电类型的第一，第二和第三保护阱。第二导电类型的第一和第二阱和APS阵列可以连接到不同的电源电压。第一导电类型的第一，第二和第三保护阱可分别围绕第一和第二阱和APS阵列的侧表面。

35. 发明申请

US20060163451A1 Image sensor and method of fabrication 失效
公开(公告)号：US20060163451A1
公开(公告)日：2006-07-27
申请号：US11336906
申请日：2006-01-23
申请人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
发明人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

36. 发明授权

US07057219B2 CMOS image sensor and method of fabricating the same 有权
公开(公告)号：US07057219B2
公开(公告)日：2006-06-06
申请号：US10461265
申请日：2003-06-13
申请人： Young-Hoon Park , Sang-Il Jung
发明人： Young-Hoon Park , Sang-Il Jung
IPC分类号： H01L31/103
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

37. 发明申请

US20050200734A1 CMOS image device having high light collection efficiency and method of fabricating the same 有权
标题翻译：具有高采光效率的CMOS图像器件及其制造方法
公开(公告)号：US20050200734A1
公开(公告)日：2005-09-15
申请号：US11065892
申请日：2005-02-25
申请人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
发明人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H04N5/225
CPC分类号： H01L27/14627
摘要： A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
摘要翻译： CMOS图像器件包括其中形成有光电二极管区域的半导体衬底，形成在对应于半导体衬底上的光电二极管区域的位置处的内透镜，以及沿着内透镜的表面形成在内透镜上的辅助透镜其中辅助透镜具有与内透镜相同的折射率。

38. 发明授权

US06573184B2 Apparatus and method for depositing thin film on wafer using atomic layer deposition 失效
公开(公告)号：US06573184B2
公开(公告)日：2003-06-03
申请号：US10094571
申请日：2002-03-07
申请人： Young-Hoon Park
发明人： Young-Hoon Park
IPC分类号： H01L2144
CPC分类号： C23C16/45544 , C23C16/45548 , C23C16/45561 , C23C16/45565 , C23C16/45574 , Y10S438/935 , Y10T137/4673
摘要： An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.

39. 发明授权

US08354292B2 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same 有权
标题翻译：具有串扰防止结构的CMOS图像传感器及其制造方法
公开(公告)号：US08354292B2
公开(公告)日：2013-01-15
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L21/339
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

40. 发明申请

US20120164783A1 CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME 有权
标题翻译：具有CROSSTALK预防结构的CMOS图像传感器及其制造方法
公开(公告)号：US20120164783A1
公开(公告)日：2012-06-28
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

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